Patents by Inventor Eun Joo Jang

Eun Joo Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12225746
    Abstract: A light emitting device and a production method thereof. The light emitting device includes a light emitting layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the light emitting layer, the electron auxiliary layer configured to transport electrons, inject electrons into the light emitting layer, or a combination thereof, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles and a nitrogen-containing metal complex. The metal oxide nanoparticles include zinc and optionally a dopant metal, the dopant metal includes Mg, Co, Ga, Ca, Zr, W, Li, Ti, Y, Al, Co, or a combination thereof and a mole ratio of nitrogen to zinc in the electron auxiliary layer is greater than or equal to about 0.001:1.
    Type: Grant
    Filed: November 1, 2021
    Date of Patent: February 11, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyo Sook Jang, Eun Joo Jang, Ilyoung Lee, Tae Ho Kim, Kun Su Park, Jun-Mo Yoo
  • Patent number: 12215266
    Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.
    Type: Grant
    Filed: July 18, 2023
    Date of Patent: February 4, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyunki Kim, Shin Ae Jun, Eun Joo Jang, Yongwook Kim, Tae Gon Kim, Yuho Won, Taekhoon Kim, Hyo Sook Jang
  • Patent number: 12213333
    Abstract: Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.
    Type: Grant
    Filed: October 31, 2023
    Date of Patent: January 28, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hongkyu Seo, Kwanghee Kim, Eun Joo Jang, Won Sik Yoon, Tae Hyung Kim, Tae Ho Kim
  • Patent number: 12187942
    Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.
    Type: Grant
    Filed: April 7, 2023
    Date of Patent: January 7, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Wook Kim, Eun Joo Jang, Hyo Sook Jang, Soo Kyung Kwon, Seon-Yeong Kim, Ji-Yeong Kim
  • Patent number: 12193252
    Abstract: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.
    Type: Grant
    Filed: April 14, 2023
    Date of Patent: January 7, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Heejae Lee, Sung Woo Kim, Eun Joo Jang, Dae Young Chung, Moon Gyu Han
  • Patent number: 12187941
    Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.
    Type: Grant
    Filed: July 18, 2022
    Date of Patent: January 7, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yuho Won, Yong Wook Kim, Eun Joo Jang, Hyo Sook Jang
  • Patent number: 12187939
    Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.
    Type: Grant
    Filed: April 4, 2023
    Date of Patent: January 7, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jihyun Min, Seon-Yeong Kim, Eun Joo Jang, Hyo Sook Jang, Soo Kyung Kwon, Yong Wook Kim
  • Patent number: 12189170
    Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65<Cx<0.69 and 0.29<Cy<0.3370 in color coordinates, and a green apex of a color region of the white light is positioned in a region of 0.17<Cx<0.31 and 0.61<Cy<0.70 in the color coordinates.
    Type: Grant
    Filed: January 14, 2022
    Date of Patent: January 7, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Hyung Kim, Eun Joo Jang, Shin Ae Jun, Hyun A Kang, Yongwook Kim, Na Youn Won, Hyo Sook Jang
  • Patent number: 12173114
    Abstract: A copolymer, including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof: wherein R1, R2, R3, X1, X2, and Ar1 are as provided herein.
    Type: Grant
    Filed: December 22, 2021
    Date of Patent: December 24, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Norihito Ishii, Takahiro Fujiyama, Masashi Tsuji, Naotoshi Suganuma, Yusaku Konishi, Dae Young Chung, Eun Joo Jang, Ha Il Kwon, Hyo Sook Jang, Soonmin Cha, Tae Ho Kim, Fumiaki Kato
  • Patent number: 12161005
    Abstract: A light emitting device including a first electrode and a second electrode each having a surface opposite the other, a light emitting layer disposed between the first electrode and the second electrode, and an electronic auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles and an orthosilicate compound.
    Type: Grant
    Filed: November 9, 2021
    Date of Patent: December 3, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwanghee Kim, Hongkyu Seo, Won Sik Yoon, Oul Cho, Tae Hyung Kim, Jaeyong Lee, Eun Joo Jang
  • Patent number: 12152184
    Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, and selenium, sulfur, or a combination thereof, wherein the quantum dot does not include cadmium, a mole ratio of tellurium relative to selenium in the first semiconductor nanocrystal is greater than about 1:1, a mole ratio of a sum of selenium and sulfur relative to in the quantum dot is greater than about 1:1, a wavelength of a maximum emission peak of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and the quantum dot has quantum efficiency (QY) of greater than or equal to about 30%, a quantum dot-polymer composite including the quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the quantum dot.
    Type: Grant
    Filed: April 29, 2021
    Date of Patent: November 26, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soo Kyung Kwon, Yong Wook Kim, Seon-Yeong Kim, Ji-Yeong Kim, Jihyun Min, Eun Joo Jang, Seonmyeong Choi, Sungwoo Hwang
  • Patent number: 12146086
    Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same. The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.
    Type: Grant
    Filed: May 2, 2023
    Date of Patent: November 19, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soo Kyung Kwon, Yong Wook Kim, Jihyun Min, Eun Joo Jang
  • Patent number: 12146091
    Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.
    Type: Grant
    Filed: April 10, 2023
    Date of Patent: November 19, 2024
    Assignees: SAMSUNG DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Woo Kim, Eun Joo Jang, Hyo Sook Jang, Hwea Yoon Kim, Yuho Won
  • Patent number: 12114518
    Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.
    Type: Grant
    Filed: October 27, 2021
    Date of Patent: October 8, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Woo Kim, Chan Su Kim, Tae Ho Kim, Kun Su Park, Eun Joo Jang, Jin A Kim, Tae Hyung Kim, Jeong Hee Lee
  • Patent number: 12060511
    Abstract: A quantum dot including a semiconductor nanocrystal core including indium (In) and phosphorus (P) and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell including zinc (Zn) and selenium (Se), wherein the semiconductor nanocrystal shell is doped with a dopant metal having a larger ion radius than a radius of an Zn2+ ion, the quantum dot does not include cadmium, and the quantum dot has a quantum efficiency of greater than or equal to about 70% and a full width at half maximum (FWHM) of an emission peak of less than or equal to about 40 nanometers (nm), and an electroluminescent device including the same.
    Type: Grant
    Filed: October 6, 2020
    Date of Patent: August 13, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yuho Won, Jeong Hee Lee, Eun Joo Jang, Ha Il Kwon, Sujin Park
  • Patent number: 12060510
    Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
    Type: Grant
    Filed: April 17, 2023
    Date of Patent: August 13, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Hyung Kim, Hyun A Kang, Eun Joo Jang, Dae Young Chung
  • Publication number: 20240254388
    Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
    Type: Application
    Filed: April 9, 2024
    Publication date: August 1, 2024
    Inventors: Yuho WON, Sung Woo KIM, Jin A KIM, Jeong Hee LEE, Tae Hyung KIM, Eun Joo JANG
  • Patent number: 12049581
    Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.
    Type: Grant
    Filed: February 6, 2023
    Date of Patent: July 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji-Yeong Kim, Soo Kyung Kwon, Seon-Yeong Kim, Yong Wook Kim, Eun Joo Jang
  • Publication number: 20240250220
    Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.
    Type: Application
    Filed: March 8, 2024
    Publication date: July 25, 2024
    Inventors: Yuho WON, Jihyun MIN, Eun Joo JANG, Hyo Sook JANG
  • Patent number: 12043780
    Abstract: A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.
    Type: Grant
    Filed: November 29, 2022
    Date of Patent: July 23, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soo Kyung Kwon, Seon-Yeong Kim, Yong Wook Kim, Ji-Yeong Kim, Eun Joo Jang