Abstract: A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

Abstract: An electroluminescent display device includes first and second electrode facing each other; and a quantum dot emission layer disposed between the first and second electrodes, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the red emission layer includes red light emitting quantum dots, the green emission layer includes green light emitting quantum dots, the blue emission layer includes blue light emitting quantum dots, and wherein the blue emission layer is configured to exhibit first emission spectrum including a blue luminescent peak and a first luminescent peak different from the blue luminescent peak, wherein the green emission layer is configured to exhibit a second emission spectrum including a green luminescent peak and a second luminescent peak different from the green luminescent peak.

Abstract: An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (?max) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm.

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

Abstract: A cadmium free quantum dot including a core including a first semiconductor nanocrystal, and a semiconductor nanocrystal shell disposed on the core, a composition of the semiconductor nanocrystal shell being different from a composition of the first semiconductor nanocrystal, a production method thereof, and a device including the same are disclosed. The semiconductor nanocrystal shell includes a zinc chalcogenide, the zinc chalcogenide includes selenium, tellurium, sulfur, or a combination thereof, and the quantum dot further alkaline an alkaline earth metal.

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

Abstract: A light emitting device and a production method thereof. The light emitting device includes a light emitting layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the light emitting layer, the electron auxiliary layer configured to transport electrons, inject electrons into the light emitting layer, or a combination thereof, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles and a nitrogen-containing metal complex. The metal oxide nanoparticles include zinc and optionally a dopant metal, the dopant metal includes Mg, Co, Ga, Ca, Zr, W, Li, Ti, Y, Al, Co, or a combination thereof and a mole ratio of nitrogen to zinc in the electron auxiliary layer is greater than or equal to about 0.001:1.

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

Abstract: Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.

Abstract: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65<Cx<0.69 and 0.29<Cy<0.3370 in color coordinates, and a green apex of a color region of the white light is positioned in a region of 0.17<Cx<0.31 and 0.61<Cy<0.70 in the color coordinates.

Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

Abstract: A copolymer, including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof: wherein R1, R2, R3, X1, X2, and Ar1 are as provided herein.

Abstract: A light emitting device including a first electrode and a second electrode each having a surface opposite the other, a light emitting layer disposed between the first electrode and the second electrode, and an electronic auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles and an orthosilicate compound.

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, and selenium, sulfur, or a combination thereof, wherein the quantum dot does not include cadmium, a mole ratio of tellurium relative to selenium in the first semiconductor nanocrystal is greater than about 1:1, a mole ratio of a sum of selenium and sulfur relative to in the quantum dot is greater than about 1:1, a wavelength of a maximum emission peak of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and the quantum dot has quantum efficiency (QY) of greater than or equal to about 30%, a quantum dot-polymer composite including the quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the quantum dot.

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same. The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.