Abstract: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

Abstract: A display panel, including a light emitting panel including at least first and second light emitting units; and a color conversion panel including a surface opposite a surface of the light emitting panel and a color conversion layer including a first and second color conversion region and a partition wall defining the first and second color conversion region, wherein the first and second light emitting units are configured to provide the first color conversion region and the second color conversion region, respectively, with high energy incident light, wherein the first color conversion region includes a first semiconductor nanoparticle-polymer composite including a first polymer matrix including a polymer including a unit having a carboxyl group or an anion form of a carboxyl group, and further including, dispersed in the polymer matrix, first semiconductor nanoparticles an additional metal substance including a group IIB metal, a group IIIA metal, or a combination thereof.

Abstract: An electroluminescent device including an anode; a cathode; a light emitting layer disposed between the anode and the cathode; and an electron transport layer disposed between the light emitting layer and the cathode, wherein the light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes zinc oxide nanoparticles including a Group IIA metal and an acid salt of an alkali metal that has an oxycarbonyl moiety, and the zinc oxide nanoparticles have an average size of less than or equal to about 20 nanometers (nm).

Abstract: A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same: M1M2Cha3??Chemical Formula 1 wherein M1 is Ca, Sr, Ba, or a combination thereof, M2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.

Abstract: A nanoplatelet including a two-dimensional template including a first semiconductor nanocrystal; and a first shell including a second semiconductor nanocrystal disposed on a surface of the two-dimensional template, the second semiconductor nanocrystal having a composition different from the first semiconductor nanocrystal, wherein the second semiconductor nanocrystal includes a Group III-V compound, and wherein the nanoplatelet does not include cadmium.

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

Abstract: An electroluminescent device and a display device including the device are disclosed, wherein the electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; an emission layer disposed on the hole transport layer, the emission layer including quantum dots; a self-assembled monomolecular layer disposed on the emission layer, the self-assembled monomolecular layer including self-assembled monomolecules; an electron transport layer disposed on the self-assembled monomolecular layer; and a second electrode disposed on the electron transport layer.

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

Abstract: An electroluminescent device including a first electrode; a second electrode; a light emitting layer disposed between the first electrode and the second electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the light emitting layer includes semiconductor nanoparticles, wherein the electron transport layer includes a plurality of metal oxide nanoparticles, and wherein the electron transport layer further includes a polycarboxylic acid compound and a halogen.

Abstract: An electroluminescent device and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including a quantum dot; a hole transport layer disposed between the light emitting layer and the first electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the hole transport layer, the light emitting layer, or a combination thereof includes thermally activated delayed fluorescence material, and the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 wt % and less than about 10 weight percent (wt %), based on 100 wt % of the hole transport layer, the light emitting layer, or the combination thereof including the thermally activated delayed fluorescence material.

Abstract: A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about 10 nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

Abstract: A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.

Abstract: An electroluminescent device including a first electrode and a second electrode spaced apart from each other (e.g., each electrode having a surface opposite the other), and a light emitting layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the light emitting layer includes semiconductor nanoparticles, wherein the electron transport layer includes a plurality of zinc oxide nanoparticles, and wherein the electron transport layer further includes an alkali metal and a halogen.

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

Abstract: An electroluminescent device including a first electrode, a second electrode, and a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including semiconductor nanoparticle(s), wherein the semiconductor nanoparticle(s) does not include cadmium, wherein the semiconductor nanoparticle(s) includes a polycyclic organic ligand including functional group linked to a C6-50 condensed aromatic group, the functional group configured to link to the semiconductor nanoparticle(s), and the C6-50 condensed aromatic group including at least three cyclic moieties that includes a first aromatic ring and a second aromatic ring, and the first aromatic ring shares two carbon atoms with a first adjacent cyclic moiety and the second aromatic ring shares two carbon atoms with the first adjacent cyclic moiety, or the second aromatic ring shares two carbon atoms with a second adjacent cyclic moiety condensed with the first adjacent cyclic moiety.

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

Abstract: An electroluminescent device includes a first electrode and a second electrode spaced apart from each other, and a light emitting layer including semiconductor nanoparticles. The semiconductor nanoparticles do not contain cadmium, the semiconductor nanoparticles include zinc, selenium, tellurium, and sulfur, the semiconductor nanoparticles have a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, the first semiconductor nanocrystals include a first zinc chalcogenide containing sulfur, in the semiconductor nanoparticles, a mole ratio of sulfur to tellurium is greater than or equal to about 0.5:1 and less than or equal to about 110:1, and the semiconductor nanoparticles are configured to emit light having a maximum emission peak wavelength of greater than or equal to about 440 nanometers (nm) and less than or equal to about 580 nm, and the semiconductor nanoparticles have a quantum yield of greater than or equal to about 40%.