Abstract: A filter structure for chemical solution used in manufacturing an integrated circuit includes: a first membrane structure comprising a plurality of membrane units, each comprising a cathode comprising a plurality of first openings, an anode comprising a plurality of second openings, and an insulating layer between the cathode and the anode; and a filter housing configured to receive the first membrane structure therein, the filter housing comprising an inlet through which the chemical solution is introduced and an outlet through which the chemical solution is discharged. The first membrane structure is configured such that when an electric field is applied between the cathode and the anode while the chemical solution introduced through the inlet passes through the first membrane structure, impurities having both positively charged particles and negatively charged particles in the chemical solution are trapped in the first membrane structure.

Abstract: A filter structure for chemical solution used in manufacturing an integrated circuit includes: a first membrane structure comprising a plurality of membrane units, each comprising a cathode comprising a plurality of first openings, an anode comprising a plurality of second openings, and an insulating layer between the cathode and the anode; and a filter housing configured to receive the first membrane structure therein, the filter housing comprising an inlet through which the chemical solution is introduced and an outlet through which the chemical solution is discharged. The first membrane structure is configured such that when an electric field is applied between the cathode and the anode while the chemical solution introduced through the inlet passes through the first membrane structure, impurities having both positively charged particles and negatively charged particles in the chemical solution are trapped in the first membrane structure.

Abstract: A method of forming a micropattern, a substrate surface inspection apparatus, a cantilever set for an atomic force microscope, and a method of analyzing a surface of a semiconductor substrate, and a probe tip the method including forming pinning patterns on a semiconductor substrate; forming a neutral pattern layer in spaces between the pinning patterns; and inspecting a surface of a guide layer that includes the pinning patterns and the neutral pattern layer by using an atomic force microscope (AFM).

Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.

Abstract: In a method of forming patterns, an object layer is formed on a substrate. Guide patterns are formed on the object layer. A brush layer is formed using a brush polymer on surfaces of the guide patterns. The brush polymer includes at least one of a first brush polymer and a second brush polymer. The first brush polymer includes a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups. The second brush polymer includes a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group. A self-aligned layer is formed using a block copolymer on the brush layer to form blocks aligned around the guide patterns. At least a portion of the blocks is transferred to the object layer.

Abstract: A method of forming a pattern of a semiconductor device includes forming a lower film on a substrate having a first surface and a second surface at different levels, forming an upper film of hydrophobic material on the lower film, forming a block copolymer film on the upper film, phase-separating the block copolymer film to form first patterns spaced apart from one another and a second pattern spanning the first patterns and interposed between a bottom surface of each of the first patterns and the upper film, removing the first patterns, and performing an etch process using the second pattern or a residual part of the second pattern as an etch mask.

Abstract: A method of forming a micropattern, a substrate surface inspection apparatus, a cantilever set for an atomic force microscope, and a method of analyzing a surface of a semiconductor substrate, and a probe tip the method including forming pinning patterns on a semiconductor substrate; forming a neutral pattern layer in spaces between the pinning patterns; and inspecting a surface of a guide layer that includes the pinning patterns and the neutral pattern layer by using an atomic force microscope (AFM).

Abstract: A method of forming a fine pattern includes forming pillar-shaped guides regularly arranged on a feature layer, forming a block copolymer layer on the feature layer around the pillar-shaped guides, phase separating the block copolymer layer, forming first domains regularly arranged on the feature layer with the pillar-shaped guides, forming a second domain on the feature layer surrounding the pillar-shaped guides and the first domains, removing the first domains, and forming holes corresponding with the first domains in the feature layer by etching the feature layer using the pillar-shaped guides and the second domain as etch masks. The block copolymer layer includes a polymer blend having first and second polymer blocks having first and second repeat units, respectively, a first homopolymer and a second homopolymer. The first domains include the first polymer block and the first homopolymer, and the second domain includes the second polymer block and the second homopolymer.

Abstract: The present inventive concept provides a method of forming a fine pattern including forming a plurality of pillar-shaped guides that are regularly arranged on a feature layer.

Abstract: In a method of forming patterns, an object layer is formed on a substrate. Guide patterns are formed on the object layer. A brush layer is formed using a brush polymer on surfaces of the guide patterns. The brush polymer includes at least one of a first brush polymer and a second brush polymer. The first brush polymer includes a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups. The second brush polymer includes a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group. A self-aligned layer is formed using a block copolymer on the brush layer to form blocks aligned around the guide patterns. At least a portion of the blocks is transferred to the object layer.

Abstract: A method of forming a pattern of a semiconductor device includes forming a lower film on a substrate having a first surface and a second surface at different levels, forming an upper film of hydrophobic material on the lower film, forming a block copolymer film on the upper film, phase-separating the block copolymer film to form first patterns spaced apart from one another and a second pattern spanning the first patterns and interposed between a bottom surface of each of the first patterns and the upper film, removing the first patterns, and performing an etch process using the second pattern or a residual part of the second pattern as an etch mask.

Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.

Abstract: Provided are a method of fabricating a semiconductor The method of fabricating a semiconductor device includes: transporting a substrate having a carbon-based sacrificial layer pattern to a processing chamber; forming a mask material layer on the substrate; removing the substrate from the processing chamber; and removing at least a part of a carbon-based material layer formed inside the processing chamber.

Abstract: In a method of forming holes, a plurality of guide patterns physically spaced apart from each other is formed on an object layer. The guide pattern has a ring shape and includes a first opening therein. A self-aligned layer is formed on the object layer and the guide patterns to fill the first opening. Preliminary holes are formed by removing portions of the self-aligned layer which are self-assembled in the first opening and between the guide patterns neighboring each other. The object layer is partially etched through the preliminary holes.

Abstract: The present disclosure includes a main body, a cleaning tool assembly connected to the main body to be movable in at least one axial direction, a handle part connected to the main body and configured to receive an applied force of a user, a detection part provided in the handle part and configured to detect a magnitude and a direction of the force applied to the handle part, and a control part configured to control the movement direction of the cleaning tool assembly based on the detected direction of the force and to control the movement distance of the cleaning tool assembly based on the detected magnitude of the force. In this way, the steering performance may be improved by reducing a horizontal load felt by a user when the user holds and moves the handle of the cleaner, fatigue felt when performing the cleaning operation may be removed by removing a vertical load applied by the handle, and convenience may be improved.

Abstract: A method of forming a fine pattern includes forming pillar-shaped guides regularly arranged on a feature layer, forming a block copolymer layer on the feature layer around the pillar-shaped guides, phase separating the block copolymer layer, forming first domains regularly arranged on the feature layer with the pillar-shaped guides, forming a second domain on the feature layer surrounding the pillar-shaped guides and the first domains, removing the first domains, and forming holes corresponding with the first domains in the feature layer by etching the feature layer using the pillar-shaped guides and the second domain as etch masks. The block copolymer layer includes a polymer blend having first and second polymer blocks having first and second repeat units, respectively, a first homopolymer and a second homopolymer. The first domains include the first polymer block and the first homopolymer, and the second domain includes the second polymer block and the second homopolymer.

Abstract: The present inventive concept provides a method of forming a fine pattern including forming a plurality of pillar-shaped guides that are regularly arranged on a feature layer.

Abstract: In a method of forming holes, a plurality of guide patterns physically spaced apart from each other is formed on an object layer. The guide pattern has a ring shape and includes a first opening therein. A self-aligned layer is formed on the object layer and the guide patterns to fill the first opening. Preliminary holes are formed by removing portions of the self-aligned layer which are self-assembled in the first opening and between the guide patterns neighboring each other. The object layer is partially etched through the preliminary holes.