Abstract: Disclosed is an interface circuit and a semiconductor device including the same. The interface circuit may include a data pad, a first driving circuit connected between the data pad and a first supply node, and configured to adjust a first resistance value applied between the data pad and the first supply node according to termination modes and selectively drive the data pad with a first supply voltage, and a first tuning circuit connected between the first supply node and a first voltage supply terminal, and configured to tune the first resistance value according to the termination modes.

Abstract: The present disclosure relates to a method for manufacturing core-shell particles using carbon monoxide, and more particularly, to a method for manufacturing core-shell particles, the method of which a simple and fast one-pot reaction enables particle manufacturing to reduce process costs, facilitate scale-up, change various types of core and shell metals, and form a multi-layered shell by including the steps of adsorbing carbon monoxide on a transition metal for a core, and reacting carbon monoxide adsorbed on the surface of the transition metal for the core, a metal precursor for a shell, and a solvent to form particles with a core-shell structure having a reduced metal shell layer formed on a transition metal core.

Abstract: A receiver circuit includes a first amplification stage and a second amplification stage. The first amplification stage is configured to generate a first output signal by differentially amplifying an input signal pair. The second amplification stage is configured to generate a second output signal by amplifying the first output signal. The receiver circuit is configured to deactivate the second amplification stage and then deactivate the first amplification stage.

Abstract: A transceiver includes a first inverter chain configured to deliver a signal in response to an enable signal and a second inverter chain which is coupled to the first inverter chain in parallel and configured to output a reset value of the signal in response to an inverted enable signal.

Abstract: A voltage generation circuit includes a voltage generation unit configured to generate a reference voltage using a power supply voltage and output the reference voltage through a voltage output node. The voltage generation circuit also includes a pre-charge unit configured to drive the voltage output node using the power supply voltage in response to a pre-charge control signal. The voltage generation circuit further includes a pre-charge control unit configured to generate at least one sampling voltage using the power supply voltage and generate the pre-charge control signal according to a result obtained by comparing the at least one sampling voltage with the reference voltage.

Abstract: The present technology may include a first detection unit configured to generate an output signal by detecting a level of an input terminal in response to a transition of a control clock signal during a normal read operation, and a second detection unit configured to generate the output signal by detecting the level of the input terminal regardless of the transition of the control clock signal during a state information read operation.

Abstract: An impedance calibration circuit includes a first leg set having an impedance calibrated to a first target impedance according to an impedance control code during an activation period of a first timing control signal, a second leg set having an impedance calibrated to a second target impedance according to the impedance control code during an activation period of a second timing control signal, a code generation circuit configured to calibrate and output a value of the impedance control code according to a result of comparing a voltage of a node, to which the first leg set is connected, with a reference voltage, and a timing control signal generation circuit configured to generate the first timing control signal and the second timing control signal having different activation periods in response to an impedance calibration enable signal.

Abstract: The present disclosure relates to a memory device for correcting a pulse duty ratio and a memory system including the same, and relates to a memory device which corrects the duty ratio of a primary pulse of a memory device control signal, and a memory system including the same.

Abstract: The present technology may include: a first logic gate coupled to an internal voltage terminal and configured to receive data and invert and output the data according to a first enable signal; and a second logic gate coupled to the internal voltage terminal and configured to invert an output of the first logic gate and to output an inverted output as a first buffer signal according to the first enable signal, and configured to compensate for a duty skew of the first buffer signal according to a level of an external voltage.

Abstract: A semiconductor apparatus includes a memory controller and data storage configured to input and output data in synchronization with a clock signal provided from the memory controller. The data storage includes a memory cell array and a data output apparatus configure to output read data from the memory cell array by sensing a logic level of the read data during a low-level period of a first clock, which is an inverted signal of a divided clock of the clock signal, and a low-level period of a second clock, the second clock having a set to phase delay amount from the divided clock.

Abstract: The present technology may include a first detection unit configured to generate an output signal by detecting a level of an input terminal in response to a transition of a control clock signal during a normal read operation, and a second detection unit configured to generate the output signal by detecting the level of the input terminal regardless of the transition of the control clock signal during a state information read operation.

Abstract: The present disclosure relates to a memory device for correcting a pulse duty ratio and a memory system including the same, and relates to a memory device which corrects the duty ratio of a primary pulse of a memory device control signal, and a memory system including the same.

Abstract: The present technology includes a data strobe clock output circuit. The data strobe clock output circuit includes a first output circuit configured to generate a rising clock and a falling clock in response to a clock and a first enable signal and output a first data strobe clock in response to the rising clock, the falling clock, and mode signals, and a second output circuit configured to generate a rising inverted clock and a falling inverted clock by inverting the rising clock and the falling clock generated by the first output circuit, and output a second data strobe clock in response to the rising inverted clock, the falling inverted clock, a second enable signal, and the mode signals.

Abstract: A semiconductor apparatus includes a memory controller and data storage configured to input and output data in synchronization with a clock signal provided from the memory controller. The data storage includes a memory cell array and a data output apparatus configure to output read data from the memory cell array by sensing a logic level of the read data during a low-level period of a first clock, which is an inverted signal of a divided clock of the clock signal, and a low-level period of a second clock, the second clock having a set to phase delay amount from the divided clock.

Abstract: The present technology may include: a first logic gate coupled to an internal voltage terminal and configured to receive data and invert and output the data according to a first enable signal; and a second logic gate coupled to the internal voltage terminal and configured to invert an output of the first logic gate and to output an inverted output as a first buffer signal according to the first enable signal, and configured to compensate for a duty skew of the first buffer signal according to a level of an external voltage.

Abstract: A data driving circuit may include a trigger circuit and a pre-driver. The trigger circuit may be configured to block a remaining signal path among a plurality of signal paths for transmitting data except for a signal path corresponding to a currently selected driving strength. The pre-driver may be configured to drive data, which are transmitted through the signal path corresponding to the currently selected driving strength, using an impedance determined in accordance with a plurality of impedance control codes.

Abstract: The present technology may include: a first logic gate coupled to an internal voltage terminal and configured to receive data and invert and output the data according to a first enable signal; and a second logic gate coupled to the internal voltage terminal and configured to invert an output of the first logic gate and to output an inverted output as a first buffer signal according to the first enable signal, and configured to compensate for a duty skew of the first buffer signal according to a level of an external voltage.

Abstract: The present technology includes a data strobe dock output circuit. The data strobe clock output circuit includes a first output circuit configured to generate a rising clock and a falling clock in response to a clock and a first enable signal and output a first data strobe clock in response to the rising clock, the falling clock, and mode signals, and a second output circuit configured to generate a rising inverted clock and a falling inverted clock by inverting the rising clock and the falling clock generated by the first output circuit, and output a second data strobe clock in response to the rising inverted clock, the falling inverted clock, a second enable signal, and the mode signals.

Abstract: An impedance calibration circuit may include: a first driver having an impedance calibrated according to a first impedance control code, and configured to drive an output terminal according to first data; a second driver having an impedance calibrated according to a second impedance control code, and configured to drive the output terminal according to second data; and an impedance calibration circuit configured to calibrate the first impedance control code to a first target value set to a resistance value of an external resistor, and calibrate the second impedance control code to a second target value different from the resistance value of the external resistor.

Abstract: The present technology may include: a first logic gate coupled to an internal voltage terminal and configured to receive data and invert and output the data according to a first enable signal; and a second logic gate coupled to the internal voltage terminal and configured to invert an output of the first logic gate and to output an inverted output as a first buffer signal according to the first enable signal, and configured to compensate for a duty skew of the first buffer signal according to a level of an external voltage.