Abstract: A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.

Abstract: Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.

Abstract: In a method of forming a device isolation layer for minimizing a parasitic capacitor and a non-volatile memory device using the same, a trench is formed on a substrate. A first insulation layer is formed on a top surface of the substrate and on inner surfaces of the trench, so that the trench is partially filled with the first insulation layer. A second insulation layer is formed on the first insulation layer to a thickness to fill up the trench, thereby forming a preliminary isolation layer. An etching rate of the second insulation layer is different from that of the first insulation layer. A recess is formed at a central portion of the preliminary isolation layer by partially removing the first and second insulation layers, thereby forming the device isolation layer including the recess. The recess in the device isolation layer reduces a parasitic capacitance in a non-volatile memory device.

Abstract: Methods of manufacturing silicon oxide layers for semiconductor devices are provided in which a substrate having a recess is coated with a spin-on-glass film so that the recess is filled with the spin-on-glass film. A main thermal treatment is performed on the spin-on-glass film at about 600 to about 1,000° C. at about 1 ATM to about 50 ATM so that the spin-on-glass film is converted into a relatively dense silicon oxide layer.

Abstract: Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.

Abstract: A semiconductor device includes a first structure having a recess having a bottom and opposing side surfaces, and a second structure conformally disposed on the bottom and side surfaces of the recess. The second structure includes a multilayer having two layers having a thickness substantially smaller than a width of the recess. Methods of manufacturing a semiconductor device include providing a first structure having a recess in a deposition chamber and flowing first and second reactants over the first structure for a first period at first and second flow rates. Then, the flow rates of the first second reactants to the first structure are substantially reduced for a pause period. The first and second reactants are then flowed over the first structure for a second period at third and fourth flow rates. The deposition and pause steps may be repeated until a multilayer having a desired thickness is formed.

Abstract: A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.

Abstract: Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated to a temperature of at least about 400° C. The spin-on-glass layer may comprise a siloxane-based material, a silanol-based material or a silazane-based material.

Abstract: Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.