Abstract: A three-dimensional semiconductor device and method of fabrication is provided. The three-dimensional semiconductor device includes a stacked structure on a lower structure. The stacked structure includes interlayer insulating layers and gate electrodes. The device also includes a channel structure on the lower structure, with the channel structure including a horizontal portion between the stacked structure and the lower structure. The channel structure also includes a plurality of vertical portions extended in a vertical direction. The device also includes support patterns on the lower structure. In addition, the device includes a gate dielectric structure having a lower portion and upper portions. The method of fabrication includes forming the stacked structure with holes. The method also includes removing a sacrificial layer from a horizontal area above the lower structure and forming a channel structure within the holes and within a horizontal space made by removal of the sacrificial layer.

Abstract: A non-volatile memory device includes a memory cell array region in which memory cells are vertically stacked on a substrate and a page buffer region in which first and second page buffers are arranged. A first distance between the memory cell array region and the first page buffer is shorter than a second distance between the memory cell array region and the second page buffer. The first page buffer includes a first transistor driven in response to a first control signal. The second page buffer includes a second transistor driven in response to a second control signal corresponding to the first control signal. At least one of design constraints and processing constraints with respect to the first and second transistors is different.

Abstract: A non-volatile memory device includes a memory cell array region in which memory cells are vertically stacked on a substrate and a page buffer region in which first and second page buffers are arranged. A first distance between the memory cell array region and the first page buffer is shorter than a second distance between the memory cell array region and the second page buffer. The first page buffer includes a first transistor driven in response to a first control signal. The second page buffer includes a second transistor driven in response to a second control signal corresponding to the first control signal. At least one of design constraints and processing constraints with respect to the first and second transistors is different.

Abstract: Disclosed are a pigment having excellent electrical conductivity and corrosion resistance and a method for preparing the same. The method for preparing a pigment according to the present invention comprises the steps of: (a) stirring and dispersing flakes in water to form a suspension; (b) forming a catalyst layer on surfaces of the flakes; and (c) plating the surfaces of the flakes on which the catalyst layer is formed.

Abstract: Disclosed are a pigment having excellent electrical conductivity and corrosion resistance and a method for preparing the same. The method for preparing a pigment according to the present invention comprises the steps of: (a) stirring and dispersing flakes in water to form a suspension; (b) forming a catalyst layer on surfaces of the flakes; and (c) plating the surfaces of the flakes on which the catalyst layer is formed.

Abstract: Provided are a method for manufacturing a memory device and a memory device manufactured by the method. The memory device may be a flash memory device. The method for manufacturing the memory device may include sequentially stacking a tunnel dielectric, a floating gate conductive layer, an inter-gate dielectric, and a control gate conductive layer on a semiconductor substrate; anisotropically etching the floating gate conductive layer, the inter-gate dielectric, and the control gate conductive layer to form gate structures. The gate structures may be separated by regions where top surfaces of the tunnel dielectric are exposed, the exposed top surfaces being damaged during formation of the gate structures. The method includes reacting the exposed top surfaces of the tunnel dielectric damaged during the formation of the gate structures with a reaction gas comprising ammonium fluoride to form a reaction by-product on the exposed top surfaces of the tunnel dielectric, and removing the reaction by-product.

Abstract: An air supply system for a fuel cell and a fuel supply system with the same include a housing having an inlet hole and an outlet hole for respectively allowing inward and outward flow of a fluid; an air pump inserted and installed into the housing and having an inlet tube into which the fluid flows and an outlet tube through which the fluid flows out; a filtering portion installed between the inlet hole and the outlet hole within the housing and filtering particulate contaminants and chemical contaminants in the fluid; and a soundproofing member installed between the outlet tube and the outlet hole within the housing.

Abstract: A fuel cell system is provided comprising: a reformer for generating hydrogen from hydrogen-containing fuel; and at least one electricity generator for generating electric energy through an electrochemical reaction of hydrogen and oxygen. The reformer includes a main body in which a plurality of reaction sections for generating hydrogen from hydrogen-containing fuel is integrally formed. A heating section is disposed in contact with the main body in order to supply different amounts of thermal energy to the plurality of reaction sections.

Abstract: A catalyst for a reformer of a fuel cell system, a reformer for a fuel cell system including the catalyst, and a fuel cell system including the reformer are provided. The reformer includes a first reacting region that generates heat energy through oxidation of fuel and includes an oxidation catalyst having a Pd catalyst supported by an Al2O3 carrier and a Pt catalyst supported by an Al2O3 carrier, and a second reacting region that generates hydrogen gas from the fuel through a reforming reaction by the heat energy. The reformer includes at least two pipes each having an independent internal space and letting the fuel containing hydrogen pass therethrough.

Abstract: There is provided a fuel cell system comprising: a stack for generating electric energy through a reaction between hydrogen and oxygen; a reformer for generating hydrogen from fuel through a catalytic reaction of the fuel using thermal energy and for supplying the generated hydrogen to the stack; a fuel supply unit for supplying the fuel to the reformer; and an oxygen supply unit for supplying oxygen to the reformer and the stack.

Abstract: Provided are a method for manufacturing a memory device and a memory device manufactured by the method. The memory device may be a flash memory device. The method for manufacturing the memory device may include sequentially stacking a tunnel dielectric, a floating gate conductive layer, an inter-gate dielectric, and a control gate conductive layer on a semiconductor substrate; anisotropically etching the floating gate conductive layer, the inter-gate dielectric, and the control gate conductive layer to form gate structures. The gate structures may be separated by regions where top surfaces of the tunnel dielectric are exposed, the exposed top surfaces being damaged during formation of the gate structures. The method includes reacting the exposed top surfaces of the tunnel dielectric damaged during the formation of the gate structures with a reaction gas comprising ammonium fluoride to form a reaction by-product on the exposed top surfaces of the tunnel dielectric, and removing the reaction by-product.

Abstract: A fuel tank and a cap device for the fuel tank. The fuel tank is connected to a fuel cell and includes a tank body having a fuel opening and a pin hole for maintaining an inside pressure, a floater positioned on a surface of the fuel stored in the tank body, and an air pipe connected to the pin hole and an upper part of the floater. The cap device includes a cap body having an inside transfer path for connecting an inlet opening for introducing the fuel and an outside transfer pipe, a fixed outer cap including a connector for fixing a discharge opening into which the transfer pipe is inserted, and an elastic opening/closing section in which the cap body is elastically compressible by the connector, and wherein the inside transfer path opens during the compression.

Abstract: A reformer for a fuel cell including: at least one reaction plate in which a channel is formed on a surface thereof; a cover plate disposed on the surface of the reaction plate; a bonding part which is formed between the reaction plate and the cover plate and which integrally fixes the reaction plate and the cover plate to each other; and a heat processing part which is formed outside the channel and which reduces a contact area between the reaction plate and the cover plate and controls thermal energy supplied to the reaction plate.

Abstract: There are provided a pump of a noise suppression and vibration proof structure and a fuel cell system using the same. The fuel cell system includes at least one electricity generator including an electrolyte membrane and an anode and a cathode attached to the both surfaces of the electrolyte membrane to generate electricity energy by the electrochemical reaction between fuel containing hydrogen and oxidant supplied to the anode and the cathode, a fuel supplying unit including a pump for supplying the oxidant to the electricity generator, and a fixed frame that is provided on a lower frame and to which the pump is fixed. The pump is separated from the lower frame and is fixed to and combined with the fixed frame by the belt-shaped fixing member on the side surface of the fixing frame with a buffering member interposed. Therefore, it is possible to reduce the noise and vibration of the pump.

Abstract: A module-type fuel cell system including a power module includes a generator installed inside and a power housing having a plurality of connection holes formed sideward, wherein the generator generates electricity through an oxidation-reduction reaction of an oxidizing agent with a hydrogen-containing fuel; a fuel supply module including a fuel supply unit installed inside and a power housing having a plurality of connection holes formed sideward, wherein the fuel supply unit supplies a hydrogen-containing fuel to the generator; an oxidizing agent supply module including an oxidizing agent supply unit installed inside and an oxidizing agent supply housing having connection holes formed sideward, wherein the oxidizing agent supply unit supplies an oxidizing agent to the generator; and a recovery module including a storage space formed therein and a recovery housing having a plurality of connection holes formed sideward, wherein the storage space recovers an unreacted fuel generated in the generator, wherein th

Abstract: Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.

Abstract: A fuel cell system includes a reformer that includes a plurality of reaction sections for generating hydrogen from hydrogen-containing fuel; a plurality of heating sections which supply thermal energy to the plurality of heating sections and which have a catalyst; and a main body receiving the plurality of reaction sections and the plurality of heating sections. The respective heating sections generate different amounts of thermal energy for the reactions of the respective reaction sections.

Abstract: A method of forming a non-volatile memory device may include forming a fin protruding from a substrate, forming a tunnel insulating layer on portions of the fin, and forming a floating gate on the tunnel insulting layer so that the tunnel insulating layer is between the floating gate and the fin. A dielectric layer may be formed on the floating gate so that the floating gate is between the dielectric layer and the fin, and a control gate electrode may be formed on the dielectric layer so that the dielectric layer is between the control gate and the fin. Related devices are also discussed.

Abstract: A stack for a fuel cell includes a first collecting plate having a first electric polarity, a second collecting plate having a second electric polarity different from the first electric polarity, and at least one electricity generator located between the collecting plates. The at least one electricity generator is for generating electric energy due to electrochemical reaction between hydrogen and oxygen to be collected by the collecting plates. Coupling members press the at least one electricity generator in an airtight connection between the collecting plates. A terminal member protrudes from the second collecting plate and is electrically connected to the first collecting plate and insulated from the second collecting plate, such that the terminal member is used as a first terminal having the first polarity. The second collecting plate or a second terminal member may also be used as a second terminal having the second polarity.

Abstract: In a non-volatile memory device allowing multi-bit and/or multi-level operations, and methods of operating and fabricating the same, the non-volatile memory device comprises, in one embodiment: a semiconductor substrate, doped with impurities of a first conductivity type, which has one or more fins defined by at least two separate trenches formed in the substrate, the fins extending along the substrate in a first direction; pairs of gate electrodes formed as spacers at sidewalls of the fins, wherein the gate electrodes are insulated from the semiconductor substrate including the fins and extend parallel to the fins; storage nodes between the gate electrodes and the fins, and insulated from the gate electrodes and the semiconductor substrate; source regions and drain regions, which are doped with impurities of a second conductivity type, and are separately formed at least at surface portions of the fins and extend across the first direction of the fins; and channel regions corresponding to the respective gate