Abstract: A thermal interposer is provided for attachment to a surface of a semiconductor device. In one embodiment, the thermal interposer includes an upper plate having a bottom surface with a plurality of grooves and made of a material having high thermal conductivity, and a lower plate having a top surface with a plurality of grooves and made of a material having a coefficient of thermal expansion that is substantially the same as the coefficient of thermal expansion of the material of a semiconductor device that is bonded to the bottom surface of the lower plate. The bottom surface of the upper plate is hermetically bonded to the top surface of the lower plate so that a vapor chamber is formed by the upper and lower plates, and walls of the grooves on the top surface of the lower plate extend to within less than 250 microns from walls of the grooves on the bottom surface of the upper plate comprise a plurality of second walls the first walls.

Abstract: An optoelectronic assembly for a computer system includes an electronic chip(s), a substrate, an electrical signaling medium, an optoelectronic transducer, and an optical coupling guide. The electronic chip(s) is in communication with the substrate, which is in communication with a first end of the electrical signaling medium. A second end of the electrical signaling medium is in communication with the optoelectronic transducer, and includes the optical coupling guide for aligning an optical signaling medium with the optoelectronic transducer. An electrical signal from the electronic chip is communicated to the optoelectronic transducer via the substrate and the electrical signaling medium. The optical transducer and electronic chip(s) share a common heat spreader, and communication to other groups of electronic chip(s) is done without the need for communication via a second level electrical package.

Abstract: A cooling system for an electronic component on a component carrier is provided. The system includes a frame, a spray manifold, and a sealing member. The frame has an opening and is connectable to the component carrier so that an annular area is defined between the opening and the electronic component. The spray manifold is sealed over the opening to define a spray area over a back surface of the electronic component. The spray manifold sprays a cooling fluid on the back surface. The sealing member seals the annular region so that input/output connectors on the component carrier are isolated from the cooling fluid.

Abstract: A thermal interposer is provided for attachment to the back surface of a semiconductor device so as to give a very low thermal resistance. In one preferred embodiment, the thermal interposer has two plates containing wick structures such as grooves. The thermal interposer is integrated with a semiconductor device so as to form a vapor chamber. In particular, the back surface of the semiconductor chip is in direct contact with the interior sealed volume of the vapor chamber, so as to greatly reduce the thermal resistance from the combination of the chip and the vapor chamber. Further, the upper plate is thermally coupled to a heat-sinking fixture such as a heat sink or a cold plate.

Abstract: An integrated optical transducer assembly includes a substrate and an optoelectronic array attached to the substrate. The optoelectronic array further includes a plurality of individual subunits bonded together to form a single array, with each of the subunits including a defined number of individual optoelectronic elements associated therewith. The elastomeric material maintains an original alignment between the plurality of subunits.

Abstract: An optoelectronic assembly for an electronic system includes a support electronic chip set configured for at least one of providing multiplexing, demultiplexing, coding, decoding and optoelectronic transducer driving and receive functions. A first substrate having a first surface and an opposite second surface is in communication with the support electronic chip set via the first surface while a second substrate is in communication with the second surface of the first substrate. The second substrate is configured for mounting at least one of data processing, data switching and data storage chips. An optoelectronic transducer is in signal communication with the support electronic chip set and an optical fiber array is aligned at a first end with the optoelectronic transducer and with an optical signaling medium at a second end.

Abstract: A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.

Abstract: An integrated optical transducer assembly includes a substrate and an optoelectronic array attached to the substrate. The optoelectronic array further includes a plurality of individual subunits bonded together to form a single array, with each of the subunits including a defined number of individual optoelectronic elements associated therewith. The elastomeric material maintains an original alignment between the plurality of subunits.

Abstract: The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.

Abstract: An optoelectronic transceiver assembly includes a plurality of optical transmission devices coupled to a first end of a multimode optical fiber core. Each of the plurality of optical transmission devices generates light at a different wavelength with respect to one another. A wavelength demultiplexing device is coupled to a second end of the multimode optical fiber core, and a plurality of optical detection devices is in proximity to the demultiplexing device. The optical detection devices receive light transmitted by the plurality of optical transmission devices.

Abstract: A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.

Abstract: An exemplary embodiment of the present invention is an apparatus for providing optical interprocessor communication. The apparatus comprises a multichip module and an optical module. The multichip module includes a substrate, an integrated circuit electrically connected to the substrate and a hermetically sealed cover. The hermetically sealed cover encloses a sealed portion of the substrate and the integrated circuit is inside of the sealed cover. The optical module includes an optical transceiver located on the substrate outside of the sealed portion and the optical transceiver is electrically connected to the integrated circuit through the substrate.

Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

Abstract: A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.

Abstract: The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.

Abstract: An exemplary embodiment of the present invention is an apparatus for providing optical interprocessor communication. The apparatus comprises a multichip module and an optical module. The multichip module includes a substrate, an integrated circuit electrically connected to the substrate and a hermetically sealed cover. The hermetically sealed cover encloses a sealed portion of the substrate and the integrated circuit is inside of the sealed cover. The optical module includes an optical transceiver located on the substrate outside of the sealed portion and the optical transceiver is electrically connected to the integrated circuit through the substrate.

Abstract: A light guide system has a light guide having a first end portion opposite a second end portion. The light guide provides a first surface and a second surface between the first and second end portions, and the second surface is inclined relative to the first surface. A light source is disposed along the first end portion on a first axis. A light redistribution device is disposed on an entrance of the light guide for receiving light from the light source and redistributing a portion of the light perpendicular to the first axis to provide a uniform light distribution from the first surface.

Abstract: The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.

Abstract: A display device provides a first optical device disposed in a light path for spatially separating angularly separated light into color components, and a pixel which receives each of the color components through a sub-pixel. Each sub-pixel controls transmitted light intensity therethrough. A black matrix is formed in operative relationship with the sub-pixels including apertures for receiving the color components. A microstructured layer is disposed in the light path and receives or transmits the color components from or to the apertures of the black matrix. The microstructured layer includes tilted and/or curved surfaces for redirecting laterally shifted color components shifted by the first optical device and may also diffuse light.

Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.