Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

Abstract: The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.

Abstract: A liquid crystal display, in accordance with the present invention, includes a first substrate having a first conductive layer formed thereon. A linearization pattern is formed on the first conductive layer for applying voltage gradients across the first conductive layer. A flexible polarizer is included having a second conductive layer formed thereon facing the first conductive layer across a gap formed therebetween, the polarizer providing a contact surface such that a touched position on the polarizer causes contact between the first conductive layer and the second conductive layer thereby identifying a location of the touched position.

Abstract: A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.

Abstract: A display device provides a first optical device disposed in a light path for spatially separating angularly separated light into color components, and a pixel which receives each of the color components through a sub-pixel. Each sub-pixel controls transmitted light intensity therethrough. A black matrix is formed in operative relationship with the sub-pixels including apertures for receiving the color components. A microstructured layer is disposed in the light path and receives or transmits the color components from or to the apertures of the black matrix. The microstructured layer includes tilted and/or curved surfaces for redirecting laterally shifted color components shifted by the first optical device and may also diffuse light.

Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

Abstract: In accordance with the present invention, a passive liquid crystal display cell includes a first substrate having a light absorbent material patterned thereon. A first conductive material is formed in a position relative to the light absorbent material for forming one of a data line and a gate line. The position may be over the light absorbent material or below the light absorbent material (and may include transparent layers in between). A second conductive material is spaced apart from the first conductive material by a gap. The gap includes liquid crystal, and the second conductive material forms the other of the data line and the gate line. A pretilt control structure is formed adjacent to the liquid crystal. The gate line and the data line provide an electric field therebetween wherein the pretilt control structure provides pretilt for the liquid crystal to provide a wide viewing angle.

Abstract: A display device, in accordance with the present invention includes a transparent substrate and an array of pixels formed on the substrate, each pixel comprises a transparent electrode and a deformable member electrically actuated between a first state and a second state, wherein in the first state a liquid including a dye is disposed in a gap between the transparent electrode and the deformable member and wherein in the second state the deformable member reduces the gap between the transparent electrode and the deformable member such that the liquid is substantially removed between the deformable layer and the transparent electrode in the area of contact.

Abstract: A display device, in accordance with the present invention includes a transparent substrate and an array of pixels formed on the substrate, each pixel comprises a transparent electrode and a deformable member electrically actuated between a first state and a second state, wherein in the first state a liquid including a dye is disposed in a gap between the transparent electrode and the deformable member and wherein in the second state the deformable member reduces the gap between the transparent electrode and the deformable member such that the liquid is substantially removed between the deformable layer and the transparent electrode in the area of contact.

Abstract: A display device, in accordance with the present invention includes a transparent substrate and an array of pixels formed on the substrate, each pixel comprises a transparent electrode and a deformable member electrically actuated between a first state and a second state, wherein in the first state a liquid including a dye is disposed in a gap between the transparent electrode and the deformable member and wherein in the second state the deformable member reduces the gap between the transparent electrode and the deformable member such that the liquid is substantially removed between the deformable layer and the transparent electrode in the area of contact.

Abstract: In accordance with the present invention, a liquid crystal display cell includes a first substrate having a light absorbent material patterned thereon. The light absorbent material includes a portion disposed within a pixel area. A conductive layer is formed on the light absorbent material for forming a first transparent electrode. A second electrode is spaced apart from the first electrode by a gap. The gap includes liquid crystal. A ridge or a trench is formed in the pixel area and projects into the liquid crystal. The ridge or trench is self-aligned to the portions of the light absorbent material in the pixel area. The first electrode and the second electrode provide an electric field therebetween wherein the ridge or trench provides pretilt control for the liquid crystal to provide an improved wide viewing angle and the portions of the light absorbent material absorb light leaked from the ridge. Other embodiments for active and passive displays are included as well as a method for employing the invention.

Abstract: A multi-layer metal sandwich structure with taper and reduced etch bias formed on a substrate includes a first metal layer formed on the substrate and a second metal layer formed on the first metal layer. The width of the first metal layer is greater than the width of the second metal layer at the interface of the first metal layer and the second metal layer. The second metal layer has tapered side walls. The taper angle between each side wall and the intersection of the first and second metal layers is between 5.degree. and 90.degree.. The multi-layer metal sandwich may also include a third metal layer formed on the second metal layer.

Abstract: A structural principle is described for control of the gap and the area around the periphery of a liquid crystal display by the formation of an insulating layer out of which, gap dimension maintaining posts and contaminant diffusion inhibiting segmented walls, remain after the display area is etched back out of the layer.

Abstract: The use of a bi-layer thin film structure consisting of aluminum or aluminide on a refractory metal layer as a diffusion barrier to oxygen penetration at high temperatures for preventing the electrical and mechanical degradation of the refractory metal for use in applications such as a capacitor electrode for high dielectric constant materials.

Abstract: An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al-Cu and interlayer contact regions or studs of Al.sub.2 Cu between patterned interconnect layers. The invention overcomes the problem of electromigration at high current density in the interconnect structure by providing a continuous path for Cu and/or Al atoms to move in the interconnect structure.

Abstract: The present invention features a process and a resulting article in which copper-based multilevel interconnects are fabricated. The copper-based multilevel interconnect formed by the inventive process first includes the process step of depositing a pattern of copper lines upon or in an applicable substrate, such as silicon dioxide. The copper lines are approximately one micron thick. The lines are coated with approximately 50 to 100 nm of titanium by sputter deposition, and undergo subsequent annealing at approximately 300.degree. C. to 400.degree. C. in an argon ambient. The titanium and copper layers are annealed to provide a Cu.sub.3 Ti alloy at the copper/titanium junction. The unreacted titanium between the copper features is then stripped away by dry etching with fluorine-based etch. The remaining Cu.sub.3 Ti alloy is subsequently transformed into TiN(O) and copper by a rapid thermal annealing in an NH.sub.3 atmosphere at an approximate temperature of below 650.degree. C.

Abstract: The present invention features a process and a resulting article in which copper-based multilevel interconnects are fabricated. The copper-based multilevel interconnect formed by the inventive process first includes the process step of depositing a pattern of copper lines upon or in an applicable substrate, such as silicon dioxide. The copper lines are approximately one micron thick. The lines are coated with approximately 50 to 100 nm of titanium by sputter deposition, and undergo subsequent annealing at approximately 300.degree. C. to 400.degree. C. in an argon ambient. The titanium and copper layers are annealed to provide a Cu.sub.3 Ti alloy at the copper/titanium junction. The unreacted titanium between the copper features is then stripped away by dry etching with fluorine-based etch. The remaining Cu.sub.3 Ti alloy is subsequently transformed into TiN(O) and copper by a rapid thermal annealing in an NH.sub.3 atmosphere at an approximate temperature of below 650.degree. C.

Abstract: The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.

Abstract: The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.