Abstract: An electrical assembly including a grounding mechanism and an electrical device, the grounding mechanism including a support longitudinal member and a switch contact member, the switch contact member arranged in or on the support longitudinal member, the switch contact member configured to be connected in use to ground, the electrical device including an electrical terminal, wherein the support longitudinal member is configured to be slidable between: a first position in which the switch contact member is separated from the electrical terminal so that the switch contact member is electrically disconnected from the electrical device and a second position in which the switch contact member is in contact with the electrical terminal so that the switch contact member is electrically connected to the electrical device.

Abstract: A method of forming ohmic contacts on a semiconductor layer includes forming silicon ohmic contact precursors on the semiconductor layer, depositing a layer of metal on the semiconductor layer including the silicon ohmic contact precursors, reacting the layer of metal with the silicon ohmic contact precursors to form metal silicide ohmic contacts on the semiconductor layer, and selectively removing the layer of metal from the semiconductor layer without removing the metal silicide contacts from the semiconductor layer.

Abstract: A condenser fan includes a lock hub and multiple blades that are fastened to the hub. Each of the blades includes six planes, each of which having variable parameters including pitch angle, sickle, chord length, and blade curve. For each embodiment of the evaporator fan, the blades are identically configured.

Abstract: The present invention provides oligopeptides, in particular, Ang-(1-7) derivatives, and methods for using and producing the same. In one particular embodiment, oligopeptides of the invention have higher blood-brain barrier penetration and/or in vivo half-life compared to the native Ang-(1-7), thereby allowing oligopeptides of the invention to be used in a wide variety of clinical applications including in treatment of cognitive dysfunction and pain.

Abstract: A 3D printing system includes a tank containing a liquid photopolymer resin. A textured surface is disposed in the tank. The textured surface is configured such that light passes through therethrough and into the liquid polymer resin. A layer of an inert material is disposed on the textured surface.

Abstract: A transistor includes a semiconductor layer and a channel region. The transistor further includes a first doped contact region in the semiconductor layer and adjacent the channel region. The transistor further includes a first ohmic contact including an interface region comprising a first interface length between the first ohmic contact and the first doped contact region larger than a length of the interface region.

Abstract: A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.

Abstract: A semiconductor device includes a substrate having an upper surface including a recess region, a semiconductor structure on the substrate, a portion of the semiconductor structure within the recess region, and a gate contact, a drain contact, and a source contact on the semiconductor structure. The recess region does not vertically overlap the drain contact or the source contact.

Abstract: A condenser fan includes a lock hub and multiple blades that are fastened to the hub. Each of the blades includes six planes, each of which having variable parameters including pitch angle, sickle, chord length, and blade curve. For each embodiment of the evaporator fan, the blades are identically configured.

Abstract: Computer-implemented methods and systems for structuring, displaying, and navigating information are disclosed. One embodiment may comprise: displaying a plurality of structured objects in a viewport of a display device, each structured object containing user-reviewable content; identifying an active structured object of the plurality of structured objects when a selector is located in a local area of the active structured object; transforming the local area of the active structured object into a first expanded local area at a fixed expansion rate; identifying a set of reactive structured objects from the plurality of structured objects when the selector is located in the first expanded local area of the active structured object; and transforming a local area of each reactive structured object into a second expanded local area at a dynamic expansion rate that varies relative to a location of the selector in the first expanded local area of the active structured object.

Abstract: A High Mobility Electron Transistor (HEMT) and a capacitor co-formed on an integrated circuit (IC) share at least one structural feature, thereby tightly integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT, which also functions in lieu of a base metal layer of a conventional capacitor. In another embodiment, a dialectic layer of the capacitor may be formed in a passivation step of forming the HEMT. In another embodiment, a metal contact of the HEMT (e.g., source, gate, or drain contact) comprises a metal layer or contact of the capacitor. In these embodiments, one or more processing steps required to form a conventional capacitor are obviated by exploiting one or more processing steps already performed in fabrication of the HEMT.