Patents by Inventor Evan Jones

Evan Jones has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Group III HEMT and capacitor that share structural features
    Patent number: 11257940
    Abstract: A High Mobility Electron Transistor (HEMT) and a capacitor co-formed on an integrated circuit (IC) share at least one structural feature, thereby tightly integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT, which also functions in lieu of a base metal layer of a conventional capacitor. In another embodiment, a dialectic layer of the capacitor may be formed in a passivation step of forming the HEMT. In another embodiment, a metal contact of the HEMT (e.g., source, gate, or drain contact) comprises a metal layer or contact of the capacitor. In these embodiments, one or more processing steps required to form a conventional capacitor are obviated by exploiting one or more processing steps already performed in fabrication of the HEMT.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: February 22, 2022
    Assignee: Cree, Inc.
    Inventors: Evan Jones, Jeremy Fisher
  • ANG (1-7) DERIVATIVE OLIGOPEPTIDES AND METHODS FOR USING AND PRODUCING THE SAME
    Publication number: 20210395308
    Abstract: The present invention provides oligopeptides, in particular, Ang-(1-7) derivatives, and methods for using and producing the same. In one particular embodiment, oligopeptides of the invention have higher blood-brain barrier penetration and/or in vivo half-life compared to the native Ang-(1-7), thereby allowing oligopeptides of the invention to be used in a wide variety of clinical applications including in treatment of cognitive dysfunction and/of impairment.
    Type: Application
    Filed: August 30, 2021
    Publication date: December 23, 2021
    Inventors: Meredith Hay, John Konhilas, Robin L. Polt, Evan Jones, Lajos Szabo
  • Ang (1-7) derivative oligopeptides and methods for using and producing the same
    Patent number: 11104706
    Abstract: The present invention provides oligopeptides, in particular, Ang-(1-7) derivatives, and methods for using and producing the same. In one particular embodiment, oligopeptides of the invention have higher blood-brain barrier penetration and/or in vivo half-life compared to the native Ang-(1-7), thereby allowing oligopeptides of the invention to be used in a wide variety of clinical applications including in treatment of cognitive dysfunction and/of impairment.
    Type: Grant
    Filed: January 23, 2020
    Date of Patent: August 31, 2021
    Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIVERSITY OF ARIZONA
    Inventors: Meredith Hay, John Konhilas, Robin L. Polt, Evan Jones, Lajos Szabo
  • Stepped field plates with proximity to conduction channel and related fabrication methods
    Patent number: 11075271
    Abstract: A transistor includes a semiconductor layer structure, a source electrode and a drain electrode on the semiconductor layer structure, a gate on a surface of the semiconductor layer structure between the source electrode and the drain electrode, and a field plate. The field plate includes a first portion adjacent the gate and a second portion adjacent the source or drain electrode. The second portion of the field plate is farther from the surface of the semiconductor layer structure than the first portion of the field plate, and is closer to the surface of the semiconductor layer structure than an extended portion of the gate. Related devices and fabrication methods are also discussed.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: July 27, 2021
    Assignee: Cree, Inc.
    Inventors: Evan Jones, Terry Alcorn, Jia Guo, Fabian Radulescu, Scott Sheppard
  • Group III HEMT and Capacitor That Share Structural Features
    Publication number: 20210217883
    Abstract: A High Mobility Electron Transistor (HEMT) and a capacitor co-formed on an integrated circuit (IC) share at least one structural feature, thereby tightly integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT, which also functions in lieu of a base metal layer of a conventional capacitor. In another embodiment, a dialectic layer of the capacitor may be formed in a passivation step of forming the HEMT. In another embodiment, a metal contact of the HEMT (e.g., source, gate, or drain contact) comprises a metal layer or contact of the capacitor. In these embodiments, one or more processing steps required to form a conventional capacitor are obviated by exploiting one or more processing steps already performed in fabrication of the HEMT.
    Type: Application
    Filed: January 14, 2020
    Publication date: July 15, 2021
    Inventors: Evan Jones, Jeremy Fisher
  • HIGH ELECTRON MOBILITY TRANSISTORS AND POWER AMPLIFIERS INCLUDING SAID TRANSISTORS HAVING IMPROVED PERFORMANCE AND RELIABILITY
    Publication number: 20210175351
    Abstract: A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.
    Type: Application
    Filed: February 19, 2021
    Publication date: June 10, 2021
    Inventors: Kyle Bothe, Evan Jones, Dan Namishia, Chris Hardiman, Fabian Radulescu, Terry Alcorn, Scott Sheppard, Bruce Schmukler
  • ANG (1-7) DERVIATIVE OLIGOPEPTIDES FOR THE TREATMENT OF PAIN
    Publication number: 20210145922
    Abstract: The present invention provides oligopeptides, in particular, Ang-(1-7) derivatives, and methods for using and producing the same. In one particular embodiment, oligopeptides of the invention have higher blood-brain barrier penetration and/or in vivo half-life compared to the native Ang-(1-7), thereby allowing oligopeptides of the invention to be used in a wide variety of clinical applications including in treatment of cognitive dysfunction and pain.
    Type: Application
    Filed: December 2, 2020
    Publication date: May 20, 2021
    Inventors: Meredith Hay, John Konhilas, Robin L. Polt, Todd Vanderah, Brittany Forte, Tally Milnes, Evan Jones, Lajos Szabo
  • STEPPED FIELD PLATES WITH PROXIMITY TO CONDUCTION CHANNEL AND RELATED FABRICATION METHODS
    Publication number: 20210111254
    Abstract: A transistor includes a semiconductor layer structure, a source electrode and a drain electrode on the semiconductor layer structure, a gate on a surface of the semiconductor layer structure between the source electrode and the drain electrode, and a field plate. The field plate includes a first portion adjacent the gate and a second portion adjacent the source or drain electrode. The second portion of the field plate is farther from the surface of the semiconductor layer structure than the first portion of the field plate, and is closer to the surface of the semiconductor layer structure than an extended portion of the gate. Related devices and fabrication methods are also discussed.
    Type: Application
    Filed: October 14, 2019
    Publication date: April 15, 2021
    Inventors: Evan Jones, Terry Alcorn, Jia Guo, Fabian Radulescu, Scott Sheppard
  • High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
    Patent number: 10971612
    Abstract: A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: April 6, 2021
    Assignee: Cree, Inc.
    Inventors: Kyle Bothe, Evan Jones, Dan Namishia, Chris Hardiman, Fabian Radulescu, Terry Alcorn, Scott Sheppard, Bruce Schmukler
  • High electron mobility transistors having improved contact spacing and/or improved contact vias
    Patent number: 10923585
    Abstract: A high electron mobility transistor (HEMT) includes a substrate comprising a first surface and a second surface on opposing sides of the substrate, a channel layer on the first surface of the substrate opposite the substrate, a barrier layer on the channel layer, a source contact comprising a first ohmic contact on an upper surface of the barrier layer, and a via extending from the second surface of the substrate to the first ohmic contact.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: February 16, 2021
    Assignee: Cree, Inc.
    Inventors: Kyle Bothe, Evan Jones, Dan Namishia, Chris Hardiman, Fabian Radulescu, Jeremy Fisher, Scott Sheppard
  • Shoe
    Patent number: D941005
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: January 18, 2022
    Assignee: NIKE, Inc.
    Inventor: Evan Jones
  • Shoe
    Patent number: D943257
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: February 15, 2022
    Assignee: NIKE, Inc.
    Inventor: Evan Jones
  • Shoe
    Patent number: D943259
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: February 15, 2022
    Assignee: NIKE, Inc.
    Inventor: Evan Jones
  • Shoe
    Patent number: D943953
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: February 22, 2022
    Assignee: NIKE, Inc.
    Inventor: Evan Jones
  • Shoe
    Patent number: D943954
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: February 22, 2022
    Assignee: NIKE, Inc.
    Inventor: Evan Jones
  • Shoe
    Patent number: D943978
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: February 22, 2022
    Assignee: NIKE, Inc.
    Inventor: Evan Jones
  • Shoe
    Patent number: D943979
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: February 22, 2022
    Assignee: NIKE, Inc.
    Inventor: Evan Jones
  • Shoe
    Patent number: D943989
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: February 22, 2022
    Assignee: NIKE, Inc.
    Inventor: Evan Jones
  • Shoe
    Patent number: D944502
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: March 1, 2022
    Assignee: NIKE, Inc.
    Inventor: Evan Jones
  • Shoe
    Patent number: D947513
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: April 5, 2022
    Assignee: NIKE, Inc.
    Inventor: Evan Jones