Abstract: Neuromorphic synapse apparatus 11 comprises a memelement 20 for storing a synaptic weight, and programming logic 21. The memelement 20 is adapted to exhibit a desired programming characteristic. The programming logic 21 is responsive to a stimulus prompting update of the synaptic weight for generating a programming signal for programming the memelement 20 to update said weight. The programming logic 21 may be responsive to an input signal indicating an input weight-change value ?Wi, and may be adapted to generate a programming signal dependent on the input weight-change value ?Wi. The programming logic 21 is adapted such that the programming signals exploit the programming characteristic of the memelement 20 to provide a desired weight-dependent synaptic update efficacy.

Abstract: Artificial neuron apparatus includes first and second resistive memory cells. The first resistive memory cell is connected in first circuitry having a first input and output. The second resistive memory cell is connected in second circuitry having a second input and output. The first and second circuitry are operable in alternating read and write phases to apply a programming current to their respective memory cells on receipt of excitatory and inhibitory neuron input signals, respectively. During the write phase, resistance of the respective cells is changed in response to successive excitatory and inhibitory neuron input signals. During the read phase, a read current is applied to their respective cells to produce first and second measurement signals, respectively. An output circuit connected to the first and second outputs produces a neuron output signal at a neuron output when a difference between the first and second measurement signals traverses a threshold.

Abstract: A computing system includes computational memory and digital combinational circuitry operatively coupled with the computational memory. The computational memory is configured to perform computations at a prescribed precision. The digital combinational circuitry is configured to increase the precision of the computations performed by the computational memory. The computational memory and the digital combinational circuitry may be configured to iteratively perform a computation to a predefined precision. The computational memory may include circuitry configured to perform analog computation using values stored in the computational memory, and the digital combinational circuitry may include a central processing unit, a graphics processing unit and/or application specific circuitry. The computational memory may include an array of resistive memory elements having resistance or conductance values stored therein, the respective resistance or conductance values being programmable.

Abstract: Space of a data storage memory of a data storage memory system is reclaimed by determining heat metrics of data stored in the data storage memory; determining relocation metrics related to relocation of the data within the data storage memory; determining utility metrics of the data relating the heat metrics to the relocation metrics for the data; and making the data whose utility metric fails a utility metric threshold, available for space reclamation.

Abstract: Space of a data storage memory of a data storage memory system is reclaimed by determining heat metrics of data stored in the data storage memory; determining relocation metrics related to relocation of the data within the data storage memory; determining utility metrics of the data relating the heat metrics to the relocation metrics for the data; and making the data whose utility metric fails a utility metric threshold, available for space reclamation.

Abstract: An I/O enclosure module is provided with one or more I/O enclosures having a plurality of slots for receiving electronic devices. A host adapter is connected a first slot of the I/O enclosure module and is configured to connect a host to the I/O enclosure. A device adapter is connected to a second slot of the I/O enclosure module and is configured to connect a storage device to the I/O enclosure module. A flash cache is connected to a third slot of the I/O enclosure module and includes a flash-based memory configured to cache data associated with data requests handled through the I/O enclosure module. A primary processor complex manages data requests handled through the I/O enclosure module by communicating with the host adapter, device adapter, and flash cache to manage to the data requests.

Abstract: A memory management system and method for managing memory blocks of a memory device of a computer. The system includes a free block data structure including free memory blocks for writing, and sorting the free memory blocks in a predetermined order based on block write-erase endurance cycle count and receiving new user-write requests to update existing data and relocation write requests to relocate existing data separately, a user-write block pool for receiving youngest blocks holding user-write data (i.e., any page being updated frequently) from the free block data structure, a relocation block pool for receiving oldest blocks holding relocation data (i.e., any page being updated infrequently) from the free block data structure, and a garbage collection pool structure for selecting at least one of user-write blocks and relocation blocks for garbage collection, wherein the selected block is moved back to the free block data structure upon being relocated and erased.

Abstract: Artificial neuron apparatus includes a resistive memory cell connected in an input circuit having a neuron input, for receiving neuron input signals, and a current source for supplying a read current to the cell. The input circuit is selectively configurable in response to a set of control signals, defining alternating read and write phases of operation, to apply the read current to the cell during the read phase and to apply a programming current to the cell, for programming cell resistance, on receipt of a neuron input signal during the write phase. The cell resistance is progressively changed from a first state to a second state in response to successive neuron input signals. The apparatus further includes an output circuit comprising a neuron output and a digital latch which is connected to the input circuit for receiving a measurement signal dependent on cell resistance.

Abstract: In at least one embodiment, a read operation in a data storage system having lossy storage media includes fetching target data of the read operation from a lossy storage device into a buffer, transferring the target data from the buffer to an external controller external to the lossy storage device via a communication bus, performing error location processing on the target data during the transferring of the target data, communicating error location information regarding at least one error location to error repair logic via the communication bus, the error repair logic repairing the at least one error in the target data using the error location information, and the external controller causing the target data as repaired to be transmitted toward a destination. By deserializing the suboperations comprising the read operation, read latency can be reduced.

Abstract: Device for selecting a level for at least one read voltage for reading data stored in a multi-level memory device. The multi-level memory device includes a plurality of memory blocks, in which each of the memory blocks includes a plurality of word lines, each of the word lines being allocated to a plurality of memory pages and being indexed by a word line index. The device includes a first mapping unit for mapping each of the word line indices to one bin label, in which the number of bin labels is smaller than the number of word lines, and a second mapping unit for mapping each of the bin labels to a voltage information being indicative for at least one read voltage, in which the level for the at least one read voltage for reading data is selectable for each word line based on the respective word line index.

Abstract: An apparatus for programming at least one multi-level Phase Change Memory (PCM) cell having a first terminal and a second terminal. A programmable control device controls the PCM cell to have a respective cell state by applying at least one current pulse to the PCM cell, the control device controlling the at least one current pulse by applying a respective first pulse to the first terminal and a respective second pulse applied to the second terminal of the PCM cell. The respective cell state is defined by a respective resistance level. The control device receives a reference resistance value defining a target resistance level for the cell, and further receives an actual resistance value of said PCM cell such that the applying the respective first pulse and said respective second pulse is based on said actual resistance value of the PCM cell and said received reference resistance value.

Abstract: An apparatus for programming at least one multi-level Phase Change Memory (PCM) cell having a first terminal and a second terminal. A programmable control device controls the PCM cell to have a respective cell state by applying at least one current pulse to the PCM cell, the control device controlling the at least one current pulse by applying a respective first pulse to the first terminal and a respective second pulse applied to the second terminal of the PCM cell. The respective cell state is defined by a respective resistance level. The control device receives a reference resistance value defining a target resistance level for the cell, and further receives an actual resistance value of said PCM cell such that the applying the respective first pulse and said respective second pulse is based on said actual resistance value of the PCM cell and said received reference resistance value.

Abstract: In one general embodiment, a magnetic recording tape includes a plurality of servo tracks, each servo track comprising a series of magnetically defined bars, wherein an average stripe width of the bars is between about 1.0 micron and about 2.2 microns, where an average servo frame length of groups of the bars comprising a servo frame is between about 120 microns and about 180 microns. In another general embodiment, a system includes a head having at least one servo reader and an array of data transducers of a type selected from a group consisting of readers and writers; and a controller operative to selectively enable every other transducer of a particular type in the array in a first mode of operation, and operative to selectively enable every transducer of the particular type in the array in a second mode of operation.

Abstract: A computer program product is provided for efficiently managing storage in a multi-tiered storage system. The computer program product comprises a computer readable storage medium having program instructions embodied therewith. The program instructions are executable by a processor to cause the processor to receive a command from an application, where the command is directed to at least one object. The program instructions are further executable by the processor to cause the processor to determine storage for the at least one object in a multi-tiered storage system based on the command, and store the at least one object in accordance with the determined storage.

Abstract: A neuromorphic processing device has a device input, for receiving an input data signal, and an assemblage of neuron circuits. Each neuron circuit comprises a resistive memory cell which is arranged to store a neuron state, indicated by cell resistance, and to receive neuron input signals for programming cell resistance to vary the neuron state, and a neuron output circuit for supplying a neuron output signal in response to cell resistance traversing a threshold. The device includes an input signal generator, connected to the device input and the assemblage of neuron circuits, for generating neuron input signals for the assemblage in dependence on the input data signal. The device further includes a device output circuit, connected to neuron output circuits of the assemblage, for producing a device output signal dependent on neuron output signals of the assemblage, whereby the processing device exploits stochasticity of resistive memory cells of the assemblage.

Abstract: Improved random-access memory cells, complementary cells, and memory devices. The present invention provides a RRAM cell for storing information in a plurality of programmable cell states. The RRAM cell includes: an electrically-insulating matrix located between a first electrode and a second electrode such that an electrically-conductive path, extending in a direction between said electrodes, is formed within said matrix on application of a write voltage to said electrodes; an electrically-conductive component; wherein a resistance is presented by the electrically-conductive component; and wherein said RRAM is arranged such that said resistance is at least about that of said electrically-conductive path and at most about that of said electrically-insulating matrix in any of said plurality of programmable cell states.

Abstract: It is provided a method for decoding a sequence of bits encoded by a LPDC code. The method comprises providing a set of bit states, including a first state and a second state, and a set of conditions to change a bit state including a first condition 5 and a second condition. The first condition and the second condition are different. The method comprises reading the value of each bit of the sequence, associating each bit to a respective state of the set according to the values as read, determining that an evaluated condition is met and changing the state of the target bit as a result of the condition being met. The method may then set the value of the target bit of the 10 sequence according to the state thereof. Such a method provides a solution for decoding a sequence of bits encoded by a LDPC code with better performance than the classic bit-flipping algorithm with only a slight increase in complexity.

Abstract: A resistive memory cell is connected in circuitry which has a first input terminal for applying neuron input signals including a read portion and a write portion. The circuitry includes a read circuit producing a read signal dependent on resistance of the memory cell, and an output terminal providing a neuron output signal, dependent on the read signal in a first state of the memory cell. The circuitry also includes a storage circuit storing a measurement signal dependent on the read signal, and a switch set operable to supply the read signal to the storage circuit during application of the read portion of each neuron input signal to the memory cell, and, after application of the read portion, to apply the measurement signal in the apparatus to enable resetting of the memory cell to a second state.

Abstract: Space of a data storage memory of a data storage memory system is reclaimed by determining heat metrics of data stored in the data storage memory; determining relocation metrics related to relocation of the data within the data storage memory; determining utility metrics of the data relating the heat metrics to the relocation metrics for the data; and making the data whose utility metric fails a utility metric threshold, available for space reclamation.

Abstract: Neuromorphic synapse apparatus 11 comprises a memelement 20 for storing a synaptic weight, and programming logic 21. The memelement 20 is adapted to exhibit a desired programming characteristic. The programming logic 21 is responsive to a stimulus prompting update of the synaptic weight for generating a programming signal for programming the memelement 20 to update said weight. The programming logic 21 may be responsive to an input signal indicating an input weight-change value ?Wi, and may be adapted to generate a programming signal dependent on the input weight-change value ?Wi. The programming logic 21 is adapted such that the programming signals exploit the programming characteristic of the memelement 20 to provide a desired weight-dependent synaptic update efficacy.