Abstract: Method to produce a neuromorphic synapse apparatus comprising a memelement for storing a synaptic weight, and programming logic. The memelement is adapted to exhibit a desired programming characteristic. The programming logic is responsive to a stimulus prompting update of the synaptic weight for generating a programming signal for programming the memelement to update said weight. The programming logic may be responsive to an input signal indicating an input weight-change value ?Wi, and may be adapted to generate a programming signal dependent on the input weight-change value ?Wi. The programming logic is adapted such that the programming signals exploit the programming characteristic of the memelement to provide a desired weight-dependent synaptic update efficacy.

Abstract: Space of a data storage memory of a data storage memory system is reclaimed by determining heat metrics of data stored in the data storage memory; determining relocation metrics related to relocation of the data within the data storage memory; determining utility metrics of the data relating the heat metrics to the relocation metrics for the data; and making the data whose utility metric fails a utility metric threshold, available for space reclamation.

Abstract: For efficient track destage in secondary storage in a more effective manner, for temporal bits employed with sequential bits for controlling the timing for destaging the track in a primary storage, if a first bit has at least one of a lower amount of holes and a hotter data heat metric, it is moved to the lower speed cache level. If the first bit has a hotter data heat and greater than a predetermined number of holes, the first bit is discarded.

Abstract: Improved random-access memory cells, complementary cells, and memory devices. The present invention provides a RRAM cell for storing information in a plurality of programmable cell states. The RRAM cell includes: an electrically-insulating matrix located between a first electrode and a second electrode such that an electrically-conductive path, extending in a direction between said electrodes, is formed within said matrix on application of a write voltage to said electrodes; an electrically-conductive component; wherein a resistance is presented by the electrically-conductive component; and wherein said RRAM is arranged such that said resistance is at least about that of said electrically-conductive path and at most about that of said electrically-insulating matrix in any of said plurality of programmable cell states.

Abstract: A neuromorphic synapse with a resistive memory cell connected in circuitry having first and second input terminals. The input terminals respectively receive pre-neuron and post-neuron action signals, each having a read portion and a write portion, in use. The circuitry includes an output terminal for providing a synaptic output signal which is dependent on resistance of the memory cell. The circuitry is configured such that the synaptic output signal is provided at the output terminal in response to application at the first input terminal of the read portion of the pre-neuron action signal, and such that a programming signal, for programming resistance of the memory cell, is applied to the cell in response to simultaneous application of the write portions of the pre-neuron and post-neuron action signals at the first and second input terminals respectively. The synapse can be adapted for operation with identical pre-neuron and post-neuron action signals.

Abstract: In at least one embodiment, a read operation in a data storage system having lossy storage media includes fetching target data of the read operation from a lossy storage device into a buffer, transferring the target data from the buffer to an external controller external to the lossy storage device via a communication bus, performing error location processing on the target data during the transferring of the target data, communicating error location information regarding at least one error location to error repair logic via the communication bus, the error repair logic repairing the at least one error in the target data using the error location information, and the external controller causing the target data as repaired to be transmitted toward a destination. By deserializing the suboperations comprising the read operation, read latency can be reduced.

Abstract: Improved random-access memory cells, complementary cells, and memory devices. RRAM cells are provided for storing information in a plurality of programmable cell states. An electrically-insulating matrix is located between first and second electrodes such that an electrically-conductive path, which extends in a direction between the electrodes, can be formed within the matrix on application of a write voltage to the electrodes. The programmable cell states correspond to respective configurations of the conductive path in the matrix. An electrically-conductive component extends in a direction between the electrodes in contact with the insulating matrix. The arrangement is such that the resistance presented by the component to a cell current produced by a read voltage applied to the electrodes to read the programmed cell state is at least about that of the conductive path and at most about that of the insulating matrix in any of the cell states.

Abstract: A logic device for communicating with a memory package with a first protocol, communicating with a memory controller with a second protocol, and for performing a protocol conversion between the first and the second protocol.

Abstract: For movement of partial data segments within a computing storage environment having lower and higher levels of cache by a processor, a whole data segment containing one of the partial data segments is promoted to both the lower and higher levels of cache, including considering an Input/Output Performance (IOP) metric, a bandwidth metric, and a garbage collection metric, and a whole data segment is promoted containing the one of the partial data segments to both the lower and higher levels of cache.

Abstract: For efficient track destage in secondary storage in a more effective manner, for temporal bits employed with sequential bits for controlling the timing for destaging the track in a primary storage, if a first bit has at least one of a lower amount of holes and a hotter data heat metric, it is moved to the lower speed cache level. If the first bit has a hotter data heat and greater than a predetermined number of holes, the first bit is discarded.

Abstract: The present invention is notably directed to a resistive memory element comprising a resistively switchable material coupled to two conductive electrodes, wherein the resistively switchable material is an amorphous compound comprising carbon and oxygen. Moreover, the carbon and oxygen stoichiometric ratio can be within a range of 1:0.30 to 1:0.80.

Abstract: In one embodiment, a method of managing data includes storing a first copy of data in a solid state memory using a controller of the solid state memory, and storing a second copy of the data in a hard disk drive memory using the controller. Write requests are served substantially simultaneously at both the solid state memory and the hard disk drive memory under control of the controller. In another embodiment, a system for storing data includes a solid state memory, at least one hard disk drive memory, and a controller for controlling storage of data in both the solid state memory and the hard disk drive memory. Other methods, systems, and computer program products are also described according to various embodiments.

Abstract: Space of a data storage memory of a data storage memory system is reclaimed by determining heat metrics of data stored in the data storage memory; determining relocation metrics related to relocation of the data within the data storage memory; determining utility metrics of the data relating the heat metrics to the relocation metrics for the data; and making the data whose utility metric fails a utility metric threshold, available for space reclamation.

Abstract: Improved random-access memory cells, complementary cells, and memory devices. RRAM cells are provided for storing information in a plurality of programmable cell states. An electrically-insulating matrix is located between first and second electrodes such that an electrically-conductive path, which extends in a direction between the electrodes, can be formed within the matrix on application of a write voltage to the electrodes. The programmable cell states correspond to respective configurations of the conductive path in the matrix. An electrically-conductive component extends in a direction between the electrodes in contact with the insulating matrix. The arrangement is such that the resistance presented by the component to a cell current produced by a read voltage applied to the electrodes to read the programmed cell state is at least about that of the conductive path and at most about that of the insulating matrix in any of the cell states.

Abstract: A mechanism is provided for controlling a solid state storage device in which the solid state storage comprises erasable blocks each comprising a plurality of data write locations. Input data is stored in successive groups of data write locations, each group comprising write locations in a set of erasable blocks in each of a plurality of logical subdivisions of the solid state storage. The input data is error correction encoded such that each group contains an error correction code for the input data in that group. Metadata, indicating the location of input data in the solid state storage, is maintained in memory. An indication of validity of data stored in each data write location is also maintained. Prior to erasing a block, valid input data is recovered from the group containing write locations in that block. The recovered data is then re-stored as new input data.

Abstract: For efficient track destage in secondary storage in a more effective manner, for temporal bits employed with sequential bits for controlling the timing for destaging the track in a primary storage, a preference of movement to lower speed cache level is implemented based on at least one of an amount of holes and a data heat metric. If a first bit has at least one of a lower amount of holes and a hotter data heat metric, it is moved to the lower speed cache level ahead of a second bit that has at least one of a higher amount of holes and a cooler data heat. If the first bit has a hotter data heat and greater than a predetermined number of holes, the first bit is discarded.

Abstract: A method for wear-leveling cells, pages, sub-pages or blocks of a memory such as a flash memory includes receiving (S10) a chunk of data to be written on the cell, page, sub-page or block of the memory; counting (S40), in the received chunk of data, a number of times a given type of binary data ‘0’ or ‘1’ is to be written; and distributing (S50) the writing of the received chunk of data among cells, pages, sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data ‘0’ or ‘1’ counted in the chunk of data to be written.

Abstract: In one embodiment, a method of managing data includes managing a first copy of data in a solid state memory using a controller of the solid state memory, and managing a second copy of the data in a hard disk drive memory using the controller. In another embodiment, a system for storing data includes a solid state memory, at least one hard disk drive memory, and a controller for controlling storage of data in both the solid state memory and the hard disk drive memory. Other methods, systems, and computer program products are also described according to various embodiments.

Abstract: Space of a data storage memory of a data storage memory system is reclaimed by determining heat metrics of data stored in the data storage memory; determining relocation metrics related to relocation of the data within the data storage memory; determining utility metrics of the data relating the heat metrics to the relocation metrics for the data; and making the data whose utility metric fails a utility metric threshold, available for space reclamation. Thus, data that otherwise may be evicted or demoted, but that meets or exceeds the utility metric threshold, is exempted from space reclamation and is instead maintained in the data storage memory.

Abstract: For movement of partial data segments within a computing storage environment having lower and higher levels of cache by a processor, a whole data segment containing one of the partial data segments is promoted to both the lower and higher levels of cache, including considering an Input/Output Performance (IOP) metric, a bandwidth metric, and a garbage collection metric, and a whole data segment is promoted containing the one of the partial data segments to both the lower and higher levels of cache.