Abstract: One or more chambers of a multi-chamber vacuum processing apparatus are provided with a high gas flow conductance path to an exhaust volume of the apparatus that is maintained at high vacuum with a high vacuum pump. Separate pumps for the one or more chambers are made unnecessary by providing such chambers with a protective deposition shield or shield set that is configured to substantially protect walls of the chamber and the gas flow conductance path from deposition and to partially impede the gas flow from the chamber through the gas flow conductance path to the exhaust volume so that the chamber can be operated at a higher pressure than that of the exhaust volume and the chambers can be operated at different pressures and without cross-contamination. Preferably, a nested set of chamber shields is used. A controller is programmed to control the processing of wafers in the chambers by controlling the supply of process gas into the chambers.

Abstract: A method to redistribute solid copper deposited by PVD on a wafer topography. The deposited copper is solubilized in a fluid for redistribution. The copper redistribution prevents inherent nonuniformity of the deposited copper film thickness by improving the uniformity of thickness of the copper film on the covered surfaces, such as vertical and bottom surfaces. The method provides the advantages of good adhesion and good grain growth and orientation that are achieved with copper deposited by PVD, and also provides the good step coverage as achieved with copper deposited by CVD.

Abstract: Deterioration and damage to insulator materials in an interconnection structure having vertical connections due to exposure to heat during bonding of lamina is avoided by performing diffusion bonding of metal pads at plated through holes (PTH) at temperatures below the melting points of conductive material in the bond. Diffusion bonding is achieved during time periods required for processing (e.g. curing or drying) of insulating materials in the laminated structure.

Abstract: Deterioration and damage to insulator materials in an interconnection structure having vertical connections due to exposure to heat during bonding of lamina is avoided by performing diffusion bonding of metal pads at plated through holes (PTH) at temperatures below the melting points of conductive material in the bond. Diffusion bonding is achieved during time periods required for processing (e.g. curing or drying) of insulating materials in the laminated structure.

Abstract: A relatively simple and inexpensive apparatus for testing at least the air brakes of trailers includes a portable air-brake governing or actuation system and a hand-held control pendent, operating off an independent compressed air supply. Without the coupling of, and connections with, a tractor, the air brakes of a trailer can be applied and released, and held in a charged mode for a period of time during which any loss of air pressure can be monitored. Using the apparatus a single person can conduct the entire air brake test process, including applying and releasing the brakes while simultaneously visually and manually inspecting the brakes.

Abstract: A testing device for conducting the Initial Terminal Inspection of the air brake system of a made-up train includes a first valve assembly for at least charging and applying the brakes through the test device operable from the location at which the device is coupled between the train brake pipe and a supply of compressed air, and it also includes a second valve assembly for releasing the brakes actuated by receipt of a remotely-transmitted signal. The Initial Terminal Inspection requires that the brakes of a train be inspected in both their applied and their released positions. A testing device is normally connected to the train brake pipe at the locomotive end. The inspection of the brakes in their applied position requires the inspector to walk the length of the train, usually from the locomotive end to the far end of the train. This can be a distance of a half mile or a mile or more.

Abstract: A method to redistribute solid copper deposited by PVD on a wafer topography. The deposited copper is solubilized in a fluid for redistribution. The copper redistribution prevents inherent nonuniformity of the deposited copper film thickness by improving the uniformity of thickness of the copper film on the covered surfaces, such as vertical and bottom surfaces. The method provides the advantages of good adhesion and good grain growth and orientation that are achieved with copper deposited by PVD, and also provides the good step coverage as achieved with copper deposited by CVD.

Abstract: A packaging system for retaining an article therein is provided. The packaging system comprises a first flat sheet member foldable into a first container portion and a second flat sheet member foldable into a second container portion. The second container portion is moveable to a position adjacent the first container portion. The packaging system further comprises a first open area within the first container portion and a second open area within the second container portion. A retention mechanism releasably retains the article within the first container portion wherein the first open area and the second open area substantially surround the article.

Abstract: A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.

Abstract: An electrical structure, comprising a first dielectric layer, a patterned layer on the first dielectric layer, and a second dielectric layer on the patterned layer. The patterned layer includes a metal pattern on the first dielectric layer, a metallic pattern on the metal pattern, and a plugged pattern within a remaining space of the patterned layer. The plugged pattern includes a dielectric material. The second dielectric layer is adhesively bonded to a top surface of the patterned layer. The second dielectric layer includes the dielectric material.

Abstract: A method for repairing a turbine blade (10) wherein the tip (16) of the blade is removed (41,43) and a replacement cap is attached by welding (49). The cap may consist of a plate (48) attached by welding and a squealer (54) formed by depositing weld material (52), as illustrated in FIG. 3. The plate and/or squealer may be formed from a material different from the material of the airfoil portion (42) of the blade in order to optimize the performance of the blade.

Abstract: A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction.

Abstract: Using plasma enhanced chemical vapor deposition, various layers can be deposited on semiconductor substrates at low temperatures in the same reactor. When a titanium nitride film is required, a titanium film can be initially deposited using a plasma enhanced chemical vapor deposition wherein the plasma is created within 25 mm of the substrate surface, supplying a uniform plasma across the surface. The deposited film can be subjected to an ammonia anneal, again using a plasma of ammonia created within 25 mm of the substrate surface, followed by the plasma enhanced chemical vapor deposition of titanium nitride by creating a plasma of titanium tetrachloride and ammonia within 25 mm of the substrate surface. This permits deposition film and annealing at relatively low temperatures—less than 800° C.

Abstract: A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.

Abstract: Disclosed is a sculpted probe pad and a gray scale etching process for making arrays of such probe pads on a thin flexible interposer for testing the electrical integrity of microelectronic devices at terminal metallurgy. Also used in the etching process is a novel fixture for holding the substrate and a novel mask for 1-step photolithographic exposure. The result of the invention is an array of test probes of preselected uniform topography, which make ohmic contact at all points to be tested simultaneously and nondestructively.

Abstract: Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of quartz material.

Abstract: A process is provided for laser welding a nickel or cobalt based superalloy article to minimize cracking by preheating the entire weld area to a ductile temperature, maintaining such temperature during welding and solidification of the weld, with the welding utilizing a powder alloy feed and the speed of the laser controlled to less than 10 inches per minute.

Abstract: A method of filling a via less than about 0.16 .mu.m in diameter in an oxide layer of a substrate with a TiN plug deposited by CVD and capping the plug with TiN only. In one embodiment, a first layer of TiN is deposited on a substrate by thermal CVD, and a second layer of TiN is deposited on the first layer by PECVD. Alternatively, a one-step process is used to deposit a TiN layer using either thermal CVD or PECVD. The method eliminates a tungsten layer, and thus eliminates a processing step.

Abstract: A protective gas shroud for welding is provided by: positioning an article into a chamber having an opening at the top to permit welding of the article; introducing argon into the body of the chamber to act as a protective gas shroud for the article during welding; introducing helium into the open top of the chamber to assist in maintaining a protective gas shroud around the article during welding; and welding the article within the protective gas shroud.

Abstract: Using plasma enhanced chemical vapor deposition, various layers can be deposited on semiconductor substrates at low temperatures in the same reactor. When a titanium nitride film is required, a titanium film can be initially deposited using a plasma enhanced chemical vapor deposition wherein the plasma is created within 25 mm of the substrate surface, supplying a uniform plasma across the surface. The deposited film can be subjected to an ammonia anneal, again using a plasma of ammonia created within 25 mm of the substrate surface, followed by the plasma enhanced chemical vapor deposition of titanium nitride by creating a plasma of titanium tetrachloride and ammonia within 25 mm of the substrate surface. This permits deposition film and annealing at relatively low temperatures--less than 800.degree. C.