Abstract: A power semiconductor module (34), comprising a substrate (12) which carries a plurality of power semiconductor devices (10), wherein the plurality of power semiconductor devices (10) comprises a first group of power semiconductor devices (10) and a second group of at least one power semiconductor device (10). The first group of power semiconductor devices (10) consists of at least two non-damaged power semiconductor devices (10b, 10c), and the second group of power semiconductor devices (10) consists of at least one damaged power semiconductor device (10a). The at least two non-damaged power semiconductor devices (10b, 10c) are electrically interconnected in a parallel configuration, and the second group of at least one power semiconductor device (10) is electrically separated from the members of the first group of power semiconductor devices (10). The disclosure further relates to an electrical converter and a method for manufacturing a power semiconductor module (34).

Abstract: A power module includes a power semiconductor module having a semiconductor chip arranged on a substrate. A lead frame is arranged in electrical contact with the semiconductor chip. Abase plate includes cooling structures and micro channels that are connected to an inlet port and an outlet port. A bond layer connects the power semiconductor module and the base plate. A mold compound is arranged on the power semiconductor module, the bond layer and the base plate. The bond layer is encapsulated completely by the power semiconductor module, the base plate and the mold compound and the lead frame is arranged at least partially within the mold compound.

Abstract: The present invention relates to a power module (101) comprising at least one semiconductor module (104) having a metal baseplate (108) with an integrated cooling structure. The power module (101) further comprises a first housing part (121) made from a plastic material and molded around at least parts of the metal baseplate (108) to establish a form-fit connection with the at least one semiconductor module (104), and a second housing part (122) made from a plastic material and joined to the first housing part (121) to form a cavity for a coolant (116) for cooling the integrated cooling structure of the at least one semiconductor module (104). The present disclosure further relates to a method for manufacturing a power module (101).

Abstract: An electrical contact arrangement electrically contacts at least two power semiconductor devices, and comprises at least two bond wires and at least three electrical contacts, comprising an alternating current contact, a positive direct current contact, and a negative direct current contact. Each electrical contact comprises a ground potential part; contact part; and insulation part on the ground potential part. The contact part is provided on the insulation part. At least two electrical contacts are separated by a gap between the insulation parts and the gap between the contact parts of the separated electrical contacts. A bond wire connects a first power semiconductor device on a contact part of the positive direct current contact with a contact part of the alternating current contact. A bond wire connects a second power semiconductor device on the contact part of the alternating current contact with a contact part of the negative direct current contact.

Abstract: The invention relates to a power semiconductor module comprising a conductive base, a conductive top, and at least two power semiconductor devices arranged between the conductive base and the conductive top. The semiconductor devices are each configured for a current of at least 1 A and/or for a voltage of at least 50 V. An insulating spacer layer is arranged on the power semiconductor devices and at least partially between the conductive base and the conductive top. At least two vertical connection elements pass from the power semiconductor devices through the spacer layer and conductively connect the conductive top with the power semiconductor devices. The spacer layer and the vertical connection elements are configured for compensating height differences of the power semiconductor devices.

Abstract: A power semiconductor module includes a substrate with a structured metallization layer and a number of semiconductor chips. Each chip has a first power electrode bonded to the metallization layer. A leadframe is laser-welded to second power electrodes of the semiconductor chips for electrically interconnecting the semiconductor chips. A control conductor is attached to the leadframe opposite to the semiconductor chips and is electrically isolated from the leadframe. The control conductor is electrically connected to control electrodes of the semiconductor chips in the group.

Abstract: A power semiconductor module includes a semiconductor board and a number of semiconductor chips attached to the semiconductor board. Each semiconductor chip has two power electrodes. An adapter board is attached to the semiconductor board above the semiconductor chips. The adapter board includes a terminal area for each semiconductor chip on a side facing away from the semiconductor board. The adapter board, in each terminal area, provides a power terminal for each power electrode of the semiconductor chip associated with the terminal area. Each power terminal is electrically connected via a respective vertical post below the terminal area with a respective semiconductor chip and each of the power terminals has at least two plug connectors. Jumper connectors interconnect the plug connectors for electrically connecting power electrodes of different semiconductor chips.

Abstract: A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.

Abstract: A power semiconductor module includes a substrate with a structured metallization layer and a number of semiconductor chips. Each chip has a first power electrode bonded to the metallization layer. A leadframe is laser-welded to second power electrodes of the semiconductor chips for electrically interconnecting the semiconductor chips. A control conductor is attached to the leadframe opposite to the semiconductor chips and is electrically isolated from the leadframe. The control conductor is electrically connected to control electrodes of the semiconductor chips in the group.

Abstract: In one embodiment a power semiconductor module includes a substrate having a first substrate side for carrying an electric circuit and having a second substrate side being located opposite to the first substrate side. The second substrate side has a flat surface and is adapted for coming in contact with a cooler. A cooling area that is surrounded by a connecting area is located at the second substrate side. A first casing component of the cooler is connected to the second substrate side at the connecting area and a second casing component is connected to the first casing component such that a cooling channel for providing the cooling area with cooling fluid is provided between the first casing component and the second casing component. A cooling structure can be welded to the cooling area at the second substrate side.

Abstract: A power semiconductor module includes a main substrate and power semiconductor chips. Each power semiconductor chip is bonded to the main conductive layer with the first power electrode. A first group of the power semiconductor chips is connected in parallel via the second power electrodes and a second group of the power semiconductor chips is connected in parallel via the second power electrodes. The module also includes a first insulation layer and a first conductive layer overlying the first insulation layer as well as a second insulation layer and a second conductive layer overlying the second insulation layer. The first conductive layer provides a first gate conductor area and a first auxiliary emitter conductor area for the first group. The second conductive layer provides a second gate conductor area and a second auxiliary emitter conductor area for the second group.

Abstract: A method for producing a semiconductor module, involving the steps: providing a carrier plate and a substrate having a bonding layer arranged on a surface of the carrier plate or the substrate, applying adhesive in multiple adhesive areas of the carrier plate or the substrate which are free from the bonding layer, positioning the substrate on the carrier plate such that the substrate and the carrier plate are in contact with the bonding layer and the adhesive, and joining the substrate and the carrier plate across the bonding layer by melting or sintering of the bonding layer.

Abstract: Systems, methods, techniques and apparatuses of power switches are disclosed. One exemplary embodiment is a power switch comprising an outer housing; a power electronics board disposed within the housing and including a semiconductor switch structured to selectively conduct a current between a first power terminal and a second power terminal; a first heat sink coupled to the power electronics board; a plurality of thermally conductive connectors; a second heat sink coupled to the plurality of thermally conductive connectors, a control electronics board structured to control the semiconductor switch, the control electronics board being located within an enclosure formed of the second heat sink, the plurality of thermally conductive connectors, and the power electronics board.

Abstract: Systems, methods, techniques and apparatuses of power switches are disclosed. One exemplary embodiment is a power switch comprising an outer housing; a power electronics board disposed within the housing and including a semiconductor switch structured to selectively conduct a current between a first power terminal and a second power terminal; a first heat sink coupled to the power electronics board; a plurality of thermally conductive connectors; a second heat sink coupled to the plurality of thermally conductive connectors, a control electronics board structured to control the semiconductor switch, the control electronics board being located within an enclosure formed of the second heat sink, the plurality of thermally conductive connectors, and the power electronics board.

Abstract: An electric power converter device includes a first power semiconductor module and a frame for a closed cooler. The first power semiconductor module includes a first base plate having a first main side, a second main side opposite the first main side and a lateral side surface extending along a circumferential edge of the first base plate and connecting the first and the second main side. The frame is attached to the second main side of the first base plate. The first base plate has a first step on the second main side along the circumferential edge of the first base plate to form a first recess along the circumferential edge of the first base plate, in which first recess a first portion of the frame is received.

Abstract: A semi-manufactured power semiconductor module includes a substrate for bonding at least one power semiconductor chip; a first leadframe bonded to the substrate and providing power terminals; and a second leadframe bonded to the substrate and providing auxiliary terminals; wherein the first leadframe and/or the second leadframe include an interlocking element adapted for aligning the first leadframe and the second leadframe with respect to each other and/or with respect to a mold for molding an encapsulation around the substrate, the first leadframe and the second leadframe.

Abstract: A half-bridge module includes a substrate with a base metallization layer divided into a first DC conducting area, a second DC conducting area and an AC conducting area; at least one first power semiconductor switch chip bonded to the first DC conducting area and electrically interconnected with the AC conducting area; at least one second power semiconductor switch chip bonded to the AC conducting area and electrically interconnected with the second DC conducting area; and a coaxial terminal arrangement including at least one inner DC terminal. The at least first outer DC terminal and the at least one second outer DC terminal protrude from the module and are arranged in a row, such that the at least one inner DC terminal is coaxially arranged between the at least one first outer DC terminal and the at least one second outer DC terminal.

Abstract: A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.

Abstract: A power semiconductor module includes a substrate with a metallization layer; at least one power semiconductor chip bonded to the substrate; and a mold encapsulation partially encapsulating the semiconductor chip and the substrate; the mold encapsulation includes at least one window exposing a terminal area of the metallization layer; and a border part of the mold encapsulation between the window and a border of the substrate has a height over the substrate smaller than a maximal height of a central part of the mold encapsulation.

Abstract: A method for producing a semiconductor module, involving the steps: providing a carrier plate and a substrate having a bonding layer arranged on a surface of the carrier plate or the substrate, applying adhesive in multiple adhesive areas of the carrier plate or the substrate which are free from the bonding layer, positioning the substrate on the carrier plate such that the substrate and the carrier plate are in contact with the bonding layer and the adhesive, and joining the substrate and the carrier plate across the bonding layer by melting or sintering of the bonding layer.