Abstract: A power module comprises at least one power semiconductor device with an electrical top contact area on a top side; and a multi-layer circuit board with multiple electrically conducting layers which are separated by multiple electrically isolating layers, the electrically isolating layers being laminated together with the electrically conducting layers; wherein the multi-layer circuit board has at least one cavity, which is opened to a top side of the multi-layer circuit board, which cavity reaches through at least two electrically conducting layers; wherein the power semiconductor device is attached with a bottom side to a bottom of the cavity; and wherein the power semiconductor device is electrically connected to a top side of the multi-layer circuit board with a conducting member bonded to the top contact area and bonded to the top side of the multi-layer circuit board.

Abstract: A half-bridge module includes a substrate with a base metallization layer divided into a first DC conducting area, a second DC conducting area and an AC conducting area; at least one first power semiconductor switch chip bonded to the first DC conducting area and electrically interconnected with the AC conducting area; at least one second power semiconductor switch chip bonded to the AC conducting area and electrically interconnected with the second DC conducting area; and a coaxial terminal arrangement including at least one inner DC terminal, the at least first outer DC terminal and the at least one second outer DC terminal protrude from the module and are arranged in a row, such that the at least one inner DC terminal is coaxially arranged between the at least one first outer DC terminal and the at least one second outer DC terminal; wherein the at least one inner DC terminal is electrically connected to the second DC conducting area; the at least one first outer DC terminal and the at least one second out

Abstract: A power semiconductor module includes a substrate with a metallization layer; at least one power semiconductor chip bonded to the substrate; and a mold encapsulation partially encapsulating the semiconductor chip and the substrate; the mold encapsulation includes at least one window exposing a terminal area of the metallization layer; and a border part of the mold encapsulation between the window and a border of the substrate has a height over the substrate smaller than a maximal height of a central part of the mold encapsulation.

Abstract: A semi-manufactured power semiconductor module includes a substrate for bonding at least one power semiconductor chip; a first leadframe bonded to the substrate and providing power terminals; and a second leadframe bonded to the substrate and providing auxiliary terminals; wherein the first leadframe and/or the second leadframe include an interlocking element adapted for aligning the first leadframe and the second leadframe with respect to each other and/or with respect to a mold for molding an encapsulation around the substrate, the first leadframe and the second leadframe.

Abstract: The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane.

Abstract: A power electronics module comprises a first liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the first liquid cooler comprises a metal body providing a first terminal of the power electronics module; a second liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the second liquid cooler comprises a metal body providing a second terminal of the power electronics module; a plurality of semiconductor chips arranged between the first liquid cooler and the second liquid cooler, such that a first electrode of each semiconductor chip is bonded to the first liquid cooler, such that the first electrode is in electrical contact with the first liquid cooler, and an opposite second electrode of each semiconductor chip is in electrical contact with the second liquid cooler; and an insulating encapsulation, formed by molding the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips into an insulation material, such that the fir

Abstract: A semiconductor device comprises two electrodes with opposite faces; a semiconductor wafer sandwiched between the two electrodes; an outer insulating ring attached to the two electrodes and surrounding the semiconductor wafer; a middle insulating ring inside the outer insulating ring and surrounding the semiconductor wafer, whereby the middle insulating ring is made of a plastics material; and an inner insulating ring inside the middle insulating ring, whereby the inner insulating ring is made of ceramics and/or glass material. Either the middle insulating ring or the inner insulating ring has a tongue and the other thereof has a groove such that the tongue fits into the groove for their rotational alignment. The middle insulating ring and the inner insulating ring have a radial opening for receiving a gate connection of the semiconductor device.

Abstract: A power module comprises at least one power semiconductor device with an electrical top contact area on a top side; and a multi-layer circuit board with multiple electrically conducting layers which are separated by multiple electrically isolating layers, the electrically isolating layers being laminated together with the electrically conducting layers; wherein the multi-layer circuit board has at least one cavity, which is opened to a top side of the multi-layer circuit board, which cavity reaches through at least two electrically conducting layers; wherein the power semiconductor device is attached with a bottom side to a bottom of the cavity; and wherein the power semiconductor device is electrically connected to a top side of the multi-layer circuit board with a conducting member bonded to the top contact area and bonded to the top side of the multi-layer circuit board.

Abstract: A semiconductor module comprises a semiconductor device; a substrate, on which the semiconductor device is attached; a molded encasing, into which the semiconductor device and the substrate are molded; at least one power terminal partially molded into the encasing and protruding from the encasing, which power terminal is electrically connected with the semiconductor device; and an encased circuit board at least partially molded into the encasing and protruding over the substrate in an extension direction of the substrate, wherein the encased circuit board comprises at least one receptacle for a pin, the receptacle being electrically connected via the encased circuit board with a control input of the semiconductor device.

Abstract: A semiconductor device comprises two electrodes with opposite faces; a semiconductor wafer sandwiched between the two electrodes; an outer insulating ring attached to the two electrodes and surrounding the semiconductor wafer; a middle insulating ring inside the outer insulating ring and surrounding the semiconductor wafer, whereby the middle insulating ring is made of a plastics material; and an inner insulating ring inside the middle insulating ring, whereby the inner insulating ring is made of ceramics and/or glass material. Either the middle insulating ring or the inner insulating ring has a tongue and the other thereof has a groove such that the tongue fits into the groove for their rotational alignment. The middle insulating ring and the inner insulating ring have a radial opening for receiving a gate connection of the semiconductor device.

Abstract: The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane.

Abstract: A power electronics module comprises a first liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the first liquid cooler comprises a metal body providing a first terminal of the power electronics module; a second liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the second liquid cooler comprises a metal body providing a second terminal of the power electronics module; a plurality of semiconductor chips arranged between the first liquid cooler and the second liquid cooler, such that a first electrode of each semiconductor chip is bonded to the first liquid cooler, such that the first electrode is in electrical contact with the first liquid cooler, and an opposite second electrode of each semiconductor chip is in electrical contact with the second liquid cooler; and an insulating encapsulation, formed by molding the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips into an insulation material, such that the fir

Abstract: A semiconductor module comprises a semiconductor device; a substrate, on which the semiconductor device is attached; a molded encasing, into which the semiconductor device and the substrate are molded; at least one power terminal partially molded into the encasing and protruding from the encasing, which power terminal is electrically connected with the semiconductor device; and an encased circuit board at least partially molded into the encasing and protruding over the substrate in an extension direction of the substrate, wherein the encased circuit board comprises at least one receptacle for a pin, the receptacle being electrically connected via the encased circuit board with a control input of the semiconductor device.