Abstract: A distributed charge pump system uses a delay element and frequency dividers to generate out of phase pump clock signals that drive different charge pumps, to offset peak current clock edges for each charge pump and thereby reduce overall peak power. Clock signal division and phase offset may be extended to multiple levels for further smoothing of the pump clock signal transitions. A dual frequency divider may be used which receives the clock signal and its complement, and generates two divided signals that are 90° out of phase. In an illustrative embodiment the clock generator comprises a variable-frequency clock source, and a voltage regulator senses an output voltage of the charge pumps, generates a reference voltage based on a currently selected frequency of the variable-frequency clock source, and temporarily disables the charge pumps (by turning off local pump clocks) when the output voltage is greater than the reference voltage.

Abstract: A distributed charge pump system uses a delay element and frequency dividers to generate out of phase pump clock signals that drive different charge pumps, to offset peak current clock edges for each charge pump and thereby reduce overall peak power. Clock signal division and phase offset may be extended to multiple levels for further smoothing of the pump clock signal transitions. A dual frequency divider may be used which receives the clock signal and its complement, and generates two divided signals that are 90° out of phase. In an illustrative embodiment the clock generator comprises a variable-frequency clock source, and a voltage regulator senses an output voltage of the charge pumps, generates a reference voltage based on a currently selected frequency of the variable-frequency clock source, and temporarily disables the charge pumps (by turning off local pump clocks) when the output voltage is greater than the reference voltage.

Abstract: A test setup for estimating the critical charge of a circuit under test (CUT) uses a charge injection circuit having a switched capacitor that is selectively connected to a node of the CUT. A voltage measurement circuit measures the voltage at a tap in the charge injection circuit before and after the charge is injected. When the injected charge causes an upset in the logical state of the CUT, the critical charge is calculated as the product of the voltage difference and the known capacitance of the capacitor. In one embodiment, (NMOS drain strike simulation) the amount of charge injected is controlled by a variable pulse width generator gating the switch of the charge injection circuit. In another embodiment (PMOS drain strike simulation) the amount of charge injected is controlled by a variable voltage supply selectively connected to the charge storage node.

Abstract: A system and circuit for constructing a synchronous signal diagram from asynchronous sampled data provides a low cost and production-integrable technique for providing a signal diagram. The data signal is edge-detected and asynchronously sampled (or alternatively a clock signal is latched). The data signal or a second signal is compared to a settable threshold voltage and sampled. The edge and comparison data are folded according to a swept timebase to find a minimum jitter period. The crossing of the signal diagram edges is determined from a peak of a histogram of the folded edge data. A histogram of ratios of the sample values versus displacement from the position of the crossing location is generated for each threshold voltage. The technique is repeated over a range of settable threshold voltages. Then, the ratio counts are differentiated across the histograms with respect to threshold voltage, from which a signal diagram is populated.

Abstract: A switched-capacitor charge pump comprises a two-phase charging circuit, cross-coupled transistors connected to output nodes of the switched capacitors, and a pump output connected to source terminals of the cross-coupled transistors. The charge pump has side transistors for boosting charge transfer, and gating logic of the side transistors includes level shifters which control connections to the pump output or a reference voltage. Negative and positive charge pump embodiments are provided. The charging circuit advantageously utilizes non-overlapping wide and narrow clock signals to generate multiple gating signals. The pump clock circuit preferably provides independent, programmable adjustment of the widths of the wide and narrow clock signals. An override mode can be provided using clamping circuits which shunt the pump output to the second nodes of the switched capacitors.

Abstract: A switched-capacitor charge pump comprises a two-phase charging circuit, cross-coupled transistors connected to output nodes of the switched capacitors, and a pump output connected to source terminals of the cross-coupled transistors. The charge pump has side transistors for boosting charge transfer, and gating logic of the side transistors includes level shifters which control connections to the pump output or a reference voltage. Negative and positive charge pump embodiments are provided. The charging circuit advantageously utilizes non-overlapping wide and narrow clock signals to generate multiple gating signals. The pump clock circuit preferably provides independent, programmable adjustment of the widths of the wide and narrow clock signals. An override mode can be provided using clamping circuits which shunt the pump output to the second nodes of the switched capacitors.

Abstract: A circular edge detector on an integrated circuit including a plurality of edge detector cells, each of the plurality of edge detector cells having an input select block operable to receive a data signal and a previous cell signal and to generate a present cell signal, and a state capture block operably connected to receive the present cell signal. The present cell signal of each of the plurality of edge detector cells is provided to a next of the plurality of edge detector cells as the previous cell signal for the next of the plurality of edge detector cells, and the present cell signal from a last edge detector cell is provided to a first edge detector cell as the previous cell signal for the first edge detector cell.

Abstract: An integrated memory system with a spiral cache responds to requests for values at a first external interface coupled to a particular storage location in the cache in a time period determined by the proximity of the requested values to the particular storage location. The cache supports multiple outstanding in-flight requests directed to the same address using an issue table that tracks multiple outstanding requests and control logic that applies the multiple requests to the same address in the order received by the cache memory. The cache also includes a backing store request table that tracks push-back write operations issued from the cache memory when the cache memory is full and a new value is provided from the external interface, and the control logic to prevent multiple copies of the same value from being loaded into the cache or a copy being loaded before a pending push-back has been completed.

Abstract: Systolic networks within a tiled storage array provide for movement of requested values to a front-most tile, while making space for the requested values at the front-most tile by moving other values away. A first and second information pathway provide different linear pathways through the tiles. The movement of other values, requests for values and responses to requests is controlled according to a clocking logic that governs the movement on the first and second information pathways according to a systolic duty cycle. The first information pathway may be a move-to-front network of a spiral cache, crossing the spiral push-back network which forms the push-back network. The systolic duty cycle may be a three-phase duty cycle, or a two-phase duty cycle may be provided if the storage tiles support a push-back swap operation.

Abstract: A circular edge detector on an integrated circuit including a plurality of edge detector cells, each of the plurality of edge detector cells having an input select block operable to receive a data signal and a previous cell signal and to generate a present cell signal, and a state capture block operably connected to receive the present cell signal. The present cell signal of each of the plurality of edge detector cells is provided to a next of the plurality of edge detector cells as the previous cell signal for the next of the plurality of edge detector cells, and the present cell signal from a last edge detector cell is provided to a first edge detector cell as the previous cell signal for the first edge detector cell.

Abstract: A sequence of K voltage samples of a transmitted data signal is generated by sampling, digitizing, and storing voltage samples of the data signal with an imbedded sample clock on an IC having an unknown period TS. The K voltage samples are plotted against a time base of K sequential times TB[K] normalized so all samples fall within one cycle of the data clock used to generate the data signal or a unit time of 1. The time base is generated by estimating the sample clock period TSE to be some multiple of 1/P where P is greater than K. Eye diagrams are analyzed for time jitter wherein only the minimum value of jitter is saved. TSE is incremented by 1/P until TS is greater than one half the data clock period. The eye diagram at the TSE with the minimum time jitter is used to analyze the data channels.

Abstract: A storage array including a local clock buffer with programmable timing provides a mechanism for evaluating circuit timing internal to the storage array. The local clock buffer can independently adjust the pulse width of a local clock that controls the wordline and local bitline precharge pulses and the pulse width of a delayed clock that controls the global bitline precharge, evaluate and read data latching. The delay between the local clock and the delayed clock can also be adjusted. By varying the pulse widths of the local and delayed clock signal, along with the inter-clock delay, the timing margins of each cell in the array can be evaluated by reading and writing the cell with varying pulse width and clock delay. The resulting evaluation can be used to evaluate timing margin variation within a die, as well variation from die-to-die and under varying environments, e.g., voltage and temperature variation.

Abstract: A circuit and method of correcting the duty cycle of digital signals is disclosed. The duty cycle of an input digital signal is measured and compared to a desired duty cycle. The leading edge of the input digital signal is passed to an output. The circuit and method adjust the falling edges at the output to achieve the desired duty cycle. The falling edges occur in response to rising edges of a delayed version of the input digital signal.

Abstract: A system and circuit for determining data signal jitter via asynchronous sampling provides a low cost and production-integrable mechanism for measuring data signal jitter. The data signal is edge-detected and sampled by a sampling clock of unrelated frequency the sampled values are collected in a histogram according to a folding of the samples around a timebase. The timebase is determined by sweeping to detect a minimum jitter for the folded data. The histogram for the correct estimated timebase period is representative of the probability density function of the location of data signal edges and the jitter characteristics are determined by the width and shape of the density function peaks. Frequency drift can be corrected by adjusting the timebase used to fold the data across the sample set.

Abstract: A system to evaluate charge pump output may include a comparator to compare a charge pump output voltage to a reference voltage to generate a comparison result. The system may also include a divider to divide down a clock signal. The system may further include a logical conjunction unit to operate on the comparison result and the divided down clock signal.

Abstract: A method, system and computer program product for generating device fingerprints and authenticating devices uses initial states of internal storage cells after each of a number multiple power cycles for each of a number of device temperatures to generate a device fingerprint. The device fingerprint may include pairs of expected values for each of the internal storage cells and a corresponding probability that the storage cell will assume the expected value. Storage cells that have expected values varying over the multiple temperatures may be excluded from the fingerprint. A device is authenticated by a similarity algorithm that uses a match of the expected values from a known fingerprint with power-up values from an unknown device, weighting the comparisons by the probability for each cell to compute a similarity measure.

Abstract: A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.

Abstract: A memory circuit includes a plurality of bit line structures, a plurality of word line structures intersecting the plurality of bit line structures to form a plurality of cell locations; and a plurality of cells located at the plurality of cell locations. Each of the cells is selectively coupled to a corresponding one of the bit line structures under control of a corresponding one of the word line structures, and each of the cells in turn includes a logical storage element having at least a first n-type field effect transistor and at least a first p-type field effect transistor.

Abstract: A comparator apparatus for comparing a first and a second voltage input includes a pair of cross-coupled inverter devices, including a pull up device and a pull down device, with output nodes defined between the pull up and pull down devices. A first switching device is coupled to the first input and a second switching device is coupled to the second input, with control circuitry configured for selective switching between a reset mode and a compare mode. In the reset mode, the first and second voltage inputs are coupled to respective output nodes so as to develop a differential signal thereacross, and the pull down devices in each inverter are isolated from the pull up devices. In the compare mode, the voltage inputs are isolated from the output nodes, and the pull down devices in each inverter are coupled to the pull up devices to latch the output nodes.

Abstract: A distributed charge pump system uses a delay element and frequency dividers to generate out of phase pump clock signals that drive different charge pumps, to offset peak current clock edges for each charge pump and thereby reduce overall peak power. Clock signal division and phase offset may be extended to multiple levels for further smoothing of the pump clock signal transitions. A dual frequency divider may be used which receives the clock signal and its complement, and generates two divided signals that are 90° out of phase. In an illustrative embodiment the clock generator comprises a variable-frequency clock source, and a voltage regulator senses an output voltage of the charge pumps, generates a reference voltage based on a currently selected frequency of the variable-frequency clock source, and temporarily disables the charge pumps (by turning off local pump clocks) when the output voltage is greater than the reference voltage.