Abstract: The invention relates to an integrated circuit comprising: a block comprising: first (38) and second (40) oppositely doped semiconductor wells; standard cells (42, 43) placed next to one another, each standard cell (42) comprising first transistors (60, 62), and a clock tree cell (30) encircled by standard cells, the clock tree cell (30) comprising: a third semiconductor well (104) having the same doping type as the doping of the first well (38); second transistors (100, 102); a semiconductor strip (106) extending continuously around the third well (104), and having the opposite doping type to the doping of the third well, so as to electrically isolate the third well (104) from the first well (38).

Abstract: The invention relates to an integrated circuit comprising: a first semiconductor well (60); a plurality of standard cells (66), each standard cell comprising a first field-effect transistor in FDSOI technology comprising a first semiconductor ground plane located immediately on the first well; and a clock tree cell (30) contiguous with the standard cells, the clock tree cell comprising a second field-effect transistor in FDSOI technology, which transistor comprises a second semiconductor ground plane located immediately on the first well (60), so as to form a p-n junction with this first well. The integrated circuit comprises an electrical power supply network (51) able to apply separate electrical biases directly to the first and second ground planes.

Abstract: A read boost circuit arranged to boost the voltage difference between a pair of complementary bit lines of a memory device during a read operation, the read boost circuit including: a first transistor adapted to be controlled by the voltage level on a first bit line of the pair of bit lines to couple a second bit line of the pair of bit lines to a first supply voltage; and a second transistor connected directly to ground and adapted to be controlled by the voltage level on the second bit line to couple the first bit line to ground.

Abstract: A device and a method for controlling an SRAM-type device, including: a bistable circuit and two switching circuits respectively connecting two access terminals of the bistable circuit to two complementary bit lines in a first direction, each switching circuit including a first switch and a second switch in series between one of the bit lines and one of the access terminals, the control terminal of the second switch being connected to a word control line in the first direction; and a third switch between the midpoint of the series connection and a terminal of application of a reference potential, a control terminal of the third switch being connected to the other one of the access terminals.

Abstract: A flip-flop may include a first master stage for latching data, a second slave stage for latching data, and an input multiplexer circuit receiving, as input, data to be latched in the flip-flop. The multiplexer may have single clock phase. The first master stage may be clocked based upon a clock phase, whereas the second stage may be clocked based upon another clock phase.

Abstract: A read boost circuit arranged to boost the voltage difference between a pair of complementary bit lines of a memory device during a read operation, the read boost circuit including: a first transistor adapted to be controlled by the voltage level on a first bit line of the pair of bit lines to couple a second bit line of the pair of bit lines to a first supply voltage; and a second transistor connected directly to ground and adapted to be controlled by the voltage level on the second bit line to couple the first bit line to ground.

Abstract: A method of synthesis of at least one logic device coupled between first and second supply voltages and having a plurality of inputs and an output, the logic device including a plurality of transistors having a standard gate length, the method including: identifying, in the at least one logic device, one or more transistors connected between the first or second supply voltage and the output node; and increasing the gate length of each of the identified one or more transistors.

Abstract: A flip-flop may include a first master stage for latching data, a second slave stage for latching data, and an input multiplexer circuit receiving, as input, data to be latched in the flip-flop. The multiplexer may have single clock phase. The first master stage may be clocked based upon a clock phase, whereas the second stage may be clocked based upon another clock phase.