Abstract: A device including a ferroelectric memory and methods of manufacturing the same are provided. In one embodiment, the device includes a semiconductor die with an integrated circuit fabricated thereon, a stress buffer die mounted to the semiconductor die overlying the integrated circuit, and a molding compound encapsulating the semiconductor die and the stress buffer die. Generally the integrated circuit includes a ferroelectric memory. In some embodiments, the device further includes a polyimide layer between the stress buffer and the semiconductor die. Other embodiments are also provided.

Abstract: An interaction system is provided. The interaction system has a first mobile device, configured to capture images of a scene, and a server, configured to recognize a first electronic device from the images captured by the first mobile device, so that the first electronic device and the first mobile device interact with each other.

Abstract: A system of multimodality-appended rich media comments is provided. The system includes a server and an electronic device. The electronic device includes a network access module, at least one sensor and a processing unit. The network access module communicates with the server. The at least one sensor senses a user's behavior in a recording mode to obtain a sensing data. The processing unit performs an application to provide a source medium, wherein a rich media comment function of the application can be activated to provide multiple interactive objects for selection and then trigger the recording mode. The application uploads the sensing data to the server after the recording mode finishes. The server analyzes the sensing data and accordingly modifies the selected interactive object, combines the source medium with the modified interactive object into a rendered medium, and then delivers the rendered medium to the application.

Abstract: An interaction system is provided. The interaction system has a first mobile device, configured to capture images of a scene, and a server, configured to recognize a first electronic device from the images captured by the first mobile device, so that the first electronic device and the first mobile device interact with each other.

Abstract: An interaction system is provided. The interaction system has: a mobile device having: a location detection unit configured to retrieve a geographical location of the mobile device; and a server configured to retrieve the geographical location of the mobile device, wherein the server has a database configured to store at least one interaction object and location information associated with the interaction object, and the server further determines whether the location information of the interaction object corresponds to the geographical location of the mobile device, wherein when the location information of the interaction object corresponds to the geographical location of the mobile device, the server further transmits the interaction object to the mobile device, so that the mobile device executes the at least one interaction object.

Abstract: An object recognition and event representation system includes: a server and a broadcaster, coupled to the server. In response to a request from the broadcaster, the server sends an event metadata and a recognition data. Based on the event metadata and the recognition data, the broadcaster simultaneously performs a live video broadcasting and a real-time object recognition. If the broadcaster recognizes an object, the broadcaster sends a recognition result to the server.

Abstract: An object recognition and event representation system includes: a server and a broadcaster, coupled to the server. In response to a request from the broadcaster, the server sends an event metadata and a recognition data. Based on the event metadata and the recognition data, the broadcaster simultaneously performs a live video broadcasting and a real-time object recognition. If the broadcaster recognizes an object, the broadcaster sends a recognition result to the server.

Abstract: A system of multimodality-appended rich media comments is provided. The system includes a server and an electronic device. The electronic device includes a network access module, at least one sensor and a processing unit. The network access module communicates with the server. The at least one sensor senses a user's behavior in a recording mode to obtain a sensing data. The processing unit performs an application to provide a source medium, wherein a rich media comment function of the application can be activated to provide multiple interactive objects for selection and then trigger the recording mode. The application uploads the sensing data to the server after the recording mode finishes. The server analyzes the sensing data and accordingly modifies the selected interactive object, combines the source medium with the modified interactive object into a rendered medium, and then delivers the rendered medium to the application.

Abstract: An array of ferroelectric memory cells that allows imprint mitigation includes ferroelectric memory cells respectively coupled to word lines, plate lines, and bit lines; a word line driver for driving the word lines; a plate line driver for driving the plate lines; a bit line driver for driving the bit lines; and an isolation device driver for driving isolation devices coupled between the bit lines and a plurality of bit lines. The method for mitigating imprint includes coupling the bit lines to a respective plurality of sense amplifiers, turning on a word line and pulsing a plate line associated with a row of ferroelectric memory cells, disconnecting the bit lines from the respective sense amplifiers, driving the plate line low and the bit lines high, driving the plate line high and the bit lines low, driving the plate line low and floating the bit lines, driving the bit lines with the sense amplifier, and turning off the word line and precharging the bit lines.

Abstract: An array of ferroelectric memory cells that allows imprint mitigation includes ferroelectric memory cells respectively coupled to word lines, plate lines, and bit lines; a word line driver for driving the word lines; a plate line driver for driving the plate lines; a bit line driver for driving the bit lines; and an isolation device driver for driving isolation devices coupled between the bit lines and a plurality of bit lines. The method for mitigating imprint includes coupling the bit lines to a respective plurality of sense amplifiers, turning on a word line and pulsing a plate line associated with a row of ferroelectric memory cells, disconnecting the bit lines from the respective sense amplifiers, driving the plate line low and the bit lines high, driving the plate line high and the bit lines low, driving the plate line low and floating the bit lines, driving the bit lines with the sense amplifier, and turning off the word line and precharging the bit lines.

Abstract: Content addressable memory (CAM) devices use both hard and soft priority techniques to allocate entries of different priority therein. The priorities of multiple CAM array blocks within the CAM device may be programmed before or as entries are loaded therein and may be reprogrammed during operation as the allocation of entries within the CAM device changes. The allocation of entries may change in response to additions or deletions of entries or as entries are reprioritized. The CAM devices include preferred priority resolution circuits that can resolve competing soft and hard priorities between multiple hit signals that are generated in response to a search operation. Such hit signals may be active to reflect the presence of at least one matching entry within a CAM array block. The resolution of which active hit signal has the highest overall priority among many can be used to facilitate the identification of the location (e.g.

Abstract: A ferroelectric reference circuit generates a reference voltage proportional to (P+U)/2 and is automatically centered between the bit line voltages corresponding to the P term and the U term across wide temperature and voltage ranges. To avoid fatiguing the reference ferroelectric capacitors generating (P+U)/2, the reference voltage is refreshed once every millisecond. To eliminate the variation of the reference voltage due to the leakage in the ferroelectric capacitors during this period of time, the reference voltage generated from the reference ferroelectric capacitors is digitized when it is refreshed. The digital value is fixed and converted to an analog value which is then fed into sense amplifiers for resolving the data states. The reference voltage is automatically at the center of the switching (P) and non-switching (U) signals and therefore the signal margin is maximized.

Abstract: Search engine devices include a content addressable memory (CAM) core having a plurality of CAM array blocks therein and a control circuit. The control circuit, which is electrically coupled to the plurality of CAM array blocks, is configured to perform built-in self repair (BISR) of hard memory defects and/or compare logic defects in the plurality of CAM array blocks concurrently with operations to search entries in the plurality of CAM array blocks.

Abstract: A CAM array has at least one row therein containing a plurality of memory cells with different susceptibilities to soft errors. The memory cells having reduced susceptibilities to soft errors include those used in check bit cells and/or CAM cells containing valid bit data and/or force no-hit data. Additional memory cells may also be provided with somewhat greater susceptibilities to soft errors and somewhat more aggressive design rules (e.g., smaller layout area). These additional memory cells may include those used in ternary CAM cells (e.g., XY CAM cells) within the row.

Abstract: A ferroelectric reference circuit generates a reference voltage proportional to (P+U)/2 and is automatically centered between the bit line voltages corresponding to the P term and the U term across wide temperature and voltage ranges. To avoid fatiguing the reference ferroelectric capacitors generating (P+U)/2, the reference voltage is refreshed once every millisecond. To eliminate the variation of the reference voltage due to the leakage in the ferroelectric capacitors during this period of time, the reference voltage generated from the reference ferroelectric capacitors is digitized when it is refreshed. The digital value is fixed and converted to an analog value which is then fed into sense amplifiers for resolving the data states. The reference voltage is automatically at the center of the switching (P) and non-switching (U) signals and therefore the signal margin is maximized.

Abstract: A ferroelectric reference circuit generates a reference voltage proportional to (P+U)/2 and is automatically centered between the bit line voltages corresponding to the P term and the U term across wide temperature and voltage ranges. To avoid fatiguing the reference ferroelectric capacitors generating (P+U)/2, the reference voltage is refreshed once every millisecond. To eliminate the variation of the reference voltage due to the leakage in the ferroelectric capacitors during this period of time, the reference voltage generated from the reference ferroelectric capacitors is digitized when it is refreshed. The digital value is fixed and converted to an analog value which is then fed into sense amplifiers for resolving the data states. The reference voltage is automatically at the center of the switching (P) and non-switching (U) signals and therefore the signal margin is maximized.

Abstract: A magnetic field enhanced photovoltaic device includes a photoelectric conversion layer, a first electrode, a second electrode, a ferro-antiferromagnetic exchange coupling layer and an applied magnetic field. The first electrode and the second electrode are respectively disposed on two surfaces of the photoelectric conversion layer to collect electrons and holes generated by the photoelectric conversion layer. The first electrode is pervious to light. The incident light reaches the photoelectric conversion layer through the first electrode. The applied magnetic field polarizes the spin state of electrons. The ferro-antiferromagnetic exchange coupling layer adjoins the photoelectric conversion layer and pins the spin state of electrons.

Abstract: Content addressable memory (CAM) devices use both hard and soft priority techniques to allocate entries of different priority therein. The allocation of entries may change in response to additions or deletions of entries or as entries are reprioritized. The CAM devices include priority resolution circuits that can resolve competing soft and hard priorities between multiple hit signals that are generated in response to a search operation. Such hit signals may be active to reflect the presence of at least one matching entry within a CAM array block. The resolution of which active hit signal has the highest overall priority among many can be used to facilitate the identification of the location (e.g., array address and row address) of a highest priority matching entry within the entire CAM device. A priority resolution circuit may also resolve competing hard priorities between two or more active hit signals having equivalent soft priority.

Abstract: Content addressable memory (CAM) devices include at least one CAM array having a plurality of columns of ternary CAM cells therein. A bit/data line driver circuit, which receives search words and write words, is electrically coupled to the CAM array. The bit/data line driver circuit is configured to save power by logically combining incoming search words with a global mask that designates locations of active ones of the plurality of columns having exclusively locally masked CAM cells at valid entries therein. The bit/data line driver circuit includes a global mask generator configured to receive write words to be added to the CAM array during respective write operations.

Abstract: A magnetic field enhanced photovoltaic device includes a photoelectric conversion layer, a first electrode, a second electrode, a ferro-antiferromagnetic exchange coupling layer and an applied magnetic field. The first electrode and the second electrode are respectively disposed on two surfaces of the photoelectric conversion layer to collect electrons and holes generated by the photoelectric conversion layer. The first electrode is pervious to light. The incident light reaches the photoelectric conversion layer through the first electrode. The applied magnetic field polarizes the spin state of electrons. The ferro-antiferromagnetic exchange coupling layer adjoins the photoelectric conversion layer and pins the spin state of electrons.