Abstract: There are provided methods for producing a hydrogel that is capable of adhesion of cells and which comprises enzymatically cross-linked conjugates of a hydrogel forming agent and a flavonoid, formed from a reaction using peroxide and peroxidase. Hydrogels produced by such methods and methods of using the hydrogels are also provided.

Abstract: A package includes a die stack that includes at least two stacked dies, and a Thermal Interface Material (TIM). The TIM includes a top portion over and contacting a top surface of the die stack, and a sidewall portion extending from the top portion down to lower than at least one of the at least two stacked dies. A first metallic heat-dissipating feature is over and contacting the top portion of TIM. A second metallic heat-dissipating feature has a sidewall contacting a sidewall of the sidewall portion of the TIM.

Abstract: Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 K?˜30 K?) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating the three adjacent metal layers. Materials such as TaN or TiN are used as bottom/top electrodes & Cu barrier. The metal layer above the thick IMD layer may act as the top electrode connection. The metal layer under the thick IMD layer may act as the bottom electrode connection. The capacitor may be of different shapes such as cylindrical shape, or a concave shape. Many kinds of materials (Si3N4, ZrO2, HfO2, BST . . . etc.) can be used as the dielectric material. The MIM capacitors are formed by one or two extra masks while forming other non-capacitor logic of the circuit.

Abstract: Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 K?˜30 K?) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating the three adjacent metal layers. Materials such as TaN or TiN are used as bottom/top electrodes & Cu barrier. The metal layer above the thick IMD layer may act as the top electrode connection. The metal layer under the thick IMD layer may act as the bottom electrode connection. The capacitor may be of different shapes such as cylindrical shape, or a concave shape. Many kinds of materials (Si3N4, ZrO2, HfO2, BST . . . etc.) can be used as the dielectric material. The MIM capacitors are formed by one or two extra masks while forming other non-capacitor logic of the circuit.

Abstract: There is provided a method of forming a hydrogel, the method comprising: providing a mixture of a polymer comprising a cross-linkable pendant phenolic group, peroxidase, H2O2, fibrinogen, and thrombin, at concentration sufficient to enzymatically cross-link the polymer and to cleave the fibrinogen to yield fibrin; and allowing the mixture to form a hydrogel. There is also provided a hydrogel comprising a cross-linked network of a polymer interpenetrated by fibrin fibers, the polymer cross-linked by oxidative coupling between phenolic groups pendant on the polymer.

Abstract: Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device.

Abstract: Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device.

Abstract: Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 K?˜30 K?) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating the three adjacent metal layers. Materials such as TaN or TiN are used as bottom/top electrodes & Cu barrier. The metal layer above the thick IMD layer may act as the top electrode connection. The metal layer under the thick IMD layer may act as the bottom electrode connection. The capacitor may be of different shapes such as cylindrical shape, or a concave shape. Many kinds of materials (Si3N4, ZrO2, HfO2, BST . . . etc.) can be used as the dielectric material. The MIM capacitors are formed by one or two extra masks while forming other non-capacitor logic of the circuit.

Abstract: Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 K?˜30 K?) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating the three adjacent metal layers. Materials such as TaN or TiN are used as bottom/top electrodes & Cu barrier. The metal layer above the thick IMD layer may act as the top electrode connection. The metal layer under the thick IMD layer may act as the bottom electrode connection. The capacitor may be of different shapes such as cylindrical shape, or a concave shape. Many kinds of materials (Si3N4, ZrO2, HfO2, BST . . . etc.) can be used as the dielectric material. The MIM capacitors are formed by one or two extra masks while forming other non-capacitor logic of the circuit.

Abstract: Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device.

Abstract: Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 K?˜30 K?) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating the three adjacent metal layers. Materials such as TaN or TiN are used as bottom/top electrodes & Cu barrier. The metal layer above the thick IMD layer may act as the top electrode connection. The metal layer under the thick IMD layer may act as the bottom electrode connection. The capacitor may be of different shapes such as cylindrical shape, or a concave shape. Many kinds of materials (Si3N4, ZrO2, HfO2, BST . . . etc) can be used as the dielectric material. The MIM capacitors are formed by one or two extra masks while forming other non-capacitor logic of the circuit.

Abstract: In a process of forming a hydrogel from a mixture comprising hydrogen peroxide (H2O2), horseradish peroxidase (HRP), and a polymer comprising a crosslinkable phenol group, the gelation rate in the solution and the crosslinking density in the hydrogel can be independently adjusted or controlled by selection of the molarity of H2O2 and concentration of HRP in the solution when the molarity of H2O2 is limited to be within a range and the concentration of HRP is limited to be above a threshold. A method for determining the range and threshold is disclosed. The hydrogel may be used to grow cells, in which case, the molarity of H2O2 may be selected to affect the differentiation or growth rate of the cells in the hydrogel. Also, the hydrogel system may be used for sustained delivery of a therapeutic protein, for example in the treatment of liver cancer, fibrosis or hepatitis.

Abstract: The disclosed subject matter includes a memory system with a flash memory and a flash memory controller. The flash memory controller is configured to divide the flash memory into virtual segments, each segment including blocks of flash memory cells. The controller is also configured to receive a write request to a location designated by a memory identifier and to map the memory identifier to a segment. When the segment matches an open segment and an open block can store the data, the controller is configured to retrieve the open segment and the open block from a collection tracking open blocks and to write the data to the open block. When the segment is different from the open segment, the controller is configured to close the open block, to write the data to a block in the segment, and to update the collection with the block in the segment.

Abstract: There are provided methods for producing a hydrogel that is capable of adhesion of cells and which comprises enzymatically cross-linked conjugates of a hydrogel forming agent and a flavonoid, formed from a reaction using peroxide and peroxidase. Hydrogels produced by such methods and methods of using the hydrogels are also provided.

Abstract: There are provided methods for producing a hydrogel that is capable of adhesion of cells and which comprises enzymatically cross-linked conjugates of a hydrogel forming agent and a flavonoid, formed from a reaction using peroxide and peroxidase. Hydrogels produced by such methods and methods of using the hydrogels are also provided.

Abstract: A thin film transistor is provided. The thin film transistor disposed on a substrate includes a gate electrode, a gate dielectric layer, a patterned semiconductor layer, a source electrode, a drain electrode covered with an anticorrosive conductive layer, a patterned passivation layer and a transparent conductive layer. The anticorrosive conductive layer includes indium tin oxide or indium zinc oxide, and is used to prevent the drain electrode from being over etched during the process of etching the passivation layer. A method for manufacturing the thin film transistor is also provided herein.

Abstract: A multifunctional toilet comprises a water storage device having a guide rail, a toilet seat and an arm assembly. The water storage device is provided with a water tank having a water inlet and a water outlet. At the water inlet is provided an inlet valve having a float ball, and at the water outlet is provided an outlet valve. The opening and closing of the inlet valve is controlled by a controller. The opening and closing of the outlet valve is controlled by a rope. When the water tank moves to its lowest position, the controller will close the inlet valve, and the rope will open the outlet valve. At the water outlet outside the water tank is provided an expansion discharge pipe. Such a multifunctional toilet is simple in structure and has the advantage of automatically flushing the toilet without the use of electricity.

Abstract: The disclosed subject matter includes a memory system with a flash memory and a flash memory controller. The flash memory controller is configured to divide the flash memory into virtual segments, each segment including blocks of flash memory cells. The controller is also configured to receive a write request to a location designated by a memory identifier and to map the memory identifier to a segment. When the segment matches an open segment and an open block can store the data, the controller is configured to retrieve the open segment and the open block from a collection tracking open blocks and to write the data to the open block. When the segment is different from the open segment, the controller is configured to close the open block, to write the data to a block in the segment, and to update the collection with the block in the segment.

Abstract: The disclosed subject matter includes a memory system with a flash memory and a flash memory controller. The flash memory has a plurality of blocks, where each block is configured to store data. The flash memory controller is configured to maintain a queue having a plurality of slots, where each of the plurality of slots is configured to maintain an identifier of an open block in the flash memory. The controller is also configured to store data to a target block in the flash memory. Furthermore, the controller is configured to remove an identifier of one of the open blocks from the queue and to add an identifier of the target block to the queue.

Abstract: Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 K?˜30 K?) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating the three adjacent metal layers. Materials such as TaN or TiN are used as bottom/top electrodes & Cu barrier. The metal layer above the thick IMD layer may act as the top electrode connection. The metal layer under the thick IMD layer may act as the bottom electrode connection. The capacitor may be of different shapes such as cylindrical shape, or a concave shape. Many kinds of materials (Si3N4, ZrO2, HfO2, BST . . . etc) can be used as the dielectric material. The MIM capacitors are formed by one or two extra masks while forming other non-capacitor logic of the circuit.