Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.

Abstract: A manufacturing method of an electronic device is disclosed by the present disclosure. The manufacturing method includes providing a substrate, wherein the substrate includes a plurality of working areas, and each of the plurality of working areas includes a plurality of first recesses and a plurality of second recesses; disposing a plurality of first electronic units in the plurality of first recesses of the plurality of working areas through fluid transfer; identifying a defective working area from the plurality of working areas, wherein at least one of the plurality of first recesses of the defective working area has no electronic unit or a defective first electronic unit disposed therein; and disposing at least one repairing electronic unit in at least one of the plurality of second recesses of the defective working area through laser transfer.

Abstract: A method for silicon carbide ingot peeling includes the steps of: placing the silicon carbide ingot between first and second suckers; having a pressing head disposed on a top surface of the first sucker to apply mechanical oscillatory energy to both the silicon carbide ingot and the second sucker through the first sucker; and, having an elastic element disposed under the second sucker to absorb part of the mechanical oscillatory energy to transmit longitudinal waves thereof to a modified layer of the silicon carbide ingot for propagating individually intermittent invisible cracks at the modified layer to break silicon carbide chains at different levels. Till the cracks connect together for forming a continuous crack across the silicon carbide ingot, a top portion of the silicon carbide ingot is then separable therefrom to form a wafer. In addition, an apparatus for silicon carbide ingot peeling is also provided.

Abstract: The present disclosure is directed to a method of manufacturing one or more needles of a probe card by refining and processing a conductive body that extends from the probe card to form a respective tip at the end of the respective conductive body. Forming the respective tip of a respective needle includes removing respective portions from the end of the conductive body by flowing an electrolytic fluid between a conductive pattern structure and an end of the respective conductive body. Removing the respective portions with the flow of the electrons may be performed in multiple successive steps to form various needles with various sizes, shapes, and profiles (e.g., cylindrical, rectangular, triangular, trapezoidal, etc.).

Abstract: A device for treating a user's skin using plasma is provided. The device comprises a plasma generation assembly and a power supply. The plasma generation assembly comprises a discharge electrode including a first surface; a first dielectric material layer provided on the first surface of the discharge electrode and the first surface, a ground electrode surrounding the discharge electrode, and an insulation member spacing around the discharge electrode from the ground electrode. The power supply configured to apply power to the plasma generation assembly so that plasma is generated from the first surface of the discharge electrode to the ground electrode and between the first dielectric material layer and the user's skin.

Abstract: An embodiment is an integrated circuit structure including a static random access memory (SRAM) cell having a first number of semiconductor fins, the SRAM cell having a first boundary and a second boundary parallel to each other, and a third boundary and a fourth boundary parallel to each other, the SRAM cell having a first cell height as measured from the third boundary to the fourth boundary, and a logic cell having the first number of semiconductor fins and the first cell height.

Abstract: An electronic device and a manufacturing method thereof are provided. The manufacturing method of the electronic device includes the following. A substrate is provided. A plurality of electronic units are transferred to the substrate. The electronic units are inspected to obtain M first defect maps. The M first defect maps are integrated into N second defect maps, where N<M. M repairing groups are provided according to the N second defect maps. Each of the repairing groups includes at least one repairing electronic unit. The M repairing groups are transferred to the substrate. At least two of the repairing groups have the same location distribution of repairing electronic units, and the location distribution is consistent with a defect distribution of one of the second defect maps.

Abstract: Disclosed herein an isolated neutralizing antibody, which is capable of specifically binding to chitinase-3-like protein-1 (YKL-40) and uses thereof. The neutralizing antibody can further conjugate with a metal chelator to form an antibody complex. Further, labeling the antibody complex with a radioactive metal nuclide results in formation of a radioactive antibody complex, which can be used as a contrast agent and treatment for YKL-40 over-expression-related diseases. The radioactive antibody complex can specifically bind to YKL-40, and can be used for diagnosis and the preparation of the use of the treatment for cancers related to YKL-40 over-expression.

Abstract: A vehicle, system and a method of predicting a thermal runaway event in a battery pack. The vehicle includes a battery pack having a plurality of battery cells. The system includes a sensor and a processor. The measures a parameter of a battery cell of a battery pack of the vehicle. The processor is configured to determine a charging response of the battery cell from the parameter, determine a likelihood of the thermal runaway event from the charging response, and control an operation of the vehicle to prevent the thermal runaway event based on the likelihood.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A decoding method, a memory storage device and a memory control circuit unit are disclosed. The method includes: activating a decoding circuit which supports a plurality of decoding modes each corresponding to a threshold value, wherein a distribution of the threshold value corresponds to error correction abilities of the decoding modes; reading first data from a rewritable non-volatile memory module; performing, by the decoding circuit, a first decoding operation on the first data; obtaining a decoding parameter according to an execution result of the first decoding operation; and performing, by the decoding circuit, a second decoding operation on the first data based on a first decoding mode among the decoding modes according to a relative numerical relationship between the decoding parameter and the threshold value.

Abstract: A vehicle operates a system and method of predicting a thermal runaway event in a battery pack of the vehicle. The battery pack includes a battery cell. The sensor obtains measurements of a parameter of the battery cell at a plurality of times. The processor is configured to determine a value of at least one feature of the battery cell from the measurements of the parameter, determine a likelihood of the thermal runaway event from the value of the at least one feature, and take an action to prevent the thermal runaway event from occurring based on the likelihood.

Abstract: The present disclosure discloses a method for recycling all types of lithium batteries. First, the lithium battery waste is acid-leached to obtain a solution containing most of metal ions. After filtering, the solution is separated from the remaining solids, and then the obtained solution is subjected to separate precipitation many times. After separately adjusting the pH value of the solution many times, adding precipitants with a high selectivity ratio, and matching with filtration and separation reaction, all ions in the lithium battery waste are sequentially precipitated in forms of iron phosphate (FePO4), aluminum hydroxide (Al(OH)3), manganese oxide (MnO2), dicobalt trioxide (cobalt oxide, Co2O3), nickel hydroxide (Ni(OH)2), and lithium carbonate (Li2CO3).

Abstract: A system and a method for parameter optimization with adaptive search space and a user interface using the same are provided. The system includes a data acquisition unit, an adaptive adjustment unit and an optimization search unit. The data acquisition unit obtains a set of executed values of several operating parameters and a target parameter. The adaptive adjustment unit includes a parameter space transformer and a search range definer. The parameter space transformer performs a space transformation on a parameter space of the operating parameters according to the executed values. The search range definer defines a parameter search range in a transformed parameter space based on the sets of the executed values. The optimization search unit takes the parameter search range as a limiting condition and takes optimizing the target parameter as a target to search for a set of recommended values of the operating parameters.

Abstract: A decoding method, a memory storage device and a memory control circuit unit are disclosed. The method includes: activating a decoding circuit which supports a plurality of decoding modes each corresponding to a threshold value, wherein a distribution of the threshold value corresponds to error correction abilities of the decoding modes; reading first data from a rewritable non-volatile memory module; performing, by the decoding circuit, a first decoding operation on the first data; obtaining a decoding parameter according to an execution result of the first decoding operation; and performing, by the decoding circuit, a second decoding operation on the first data based on a first decoding mode among the decoding modes according to a relative numerical relationship between the decoding parameter and the threshold value.

Abstract: An upper for an article of footwear is configured to be connected to a sole structure and is configured to receive a foot. The upper includes a knitted component having a strobel portion that is configured to be disposed underneath the foot. The strobel portion defines an interior surface and an exterior surface of the knitted component. The strobel portion defines a strobel passage between the interior surface and the exterior surface. Also, the upper includes a tensile strand that extends through the strobel passage.

Abstract: A wireless communication method includes: categorizing a plurality of different beacon elements into a first group of elements and a second group of elements; generating a beacon frame, which is configured to carry the first group of elements, wherein the beacon frame is compliant to at least one legacy generation of Wi-Fi technology; generating a second frame, which is configured to carry the second group of elements, wherein the second frame is compliant to a non-legacy generation of Wi-Fi technology rather than the at least one legacy generation of Wi-Fi technology; and sending the beacon frame and the second frame.

Abstract: Interconnect structures that maximize integrated circuit (IC) density and corresponding formation techniques are disclosed. An exemplary IC device includes a gate layer extending along a first direction. An interconnect structure disposed over the gate layer includes odd-numbered interconnect routing layers oriented along a second direction that is substantially perpendicular to the first direction and even-numbered interconnect routing layers oriented along a third direction that is substantially parallel to the first direction. In some implementations, a ratio of a gate pitch of the gate layer to a pitch of a first of the even-numbered interconnect routing layers to a pitch of a third of the even-numbered interconnect routing layers is 3:2:4. In some implementations, a pitch of a first of the odd-numbered interconnect routing layers to a pitch of a third of the odd-numbered interconnect routing layers to a pitch of a seventh of the odd-numbered interconnect routing layers is 1:1:2.

Abstract: The present invention provides a method for selecting a response, an earphone base, a method of selecting a wireless earphone, a device and a medium. The method for selecting a response includes sending communication data to a user terminal, the communication data comprises a wireless earphone communication data and/or an earphone base communication data; detecting whether a selection command for the wireless earphone sent from the user terminal is received; and controlling the earphone base corresponding to the selection command to execute a predetermined response action. By adopting the present invention, the earphone base establishes a connection with the user terminal through its own communication function or a connected wireless earphone. The communication data of the earphone base and the wireless earphone are sent to the user terminal for the user to view. The earphone base is capable of responding when receiving the selection command.