Patents by Inventor Fang Lin

Fang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240127183
    Abstract: The disclosure relates to the field of information processing, and more particularly to a method, electronic device and storage medium for information processing. According to the embodiments of the disclosure, the method of information processing includes: establishing an association relationship between a first application and a first file, the first application being a program for processing a service processing flow; determining service processing flow information of the first application; and displaying first information corresponding to the service processing flow information at a predetermined position in the first file. The method of information processing provided by the embodiments of the disclosure enables users to conveniently obtain service processing flow information related to the first file through the first file, and facilitates subsequent audit and review of the file or the corresponding service processing flow.
    Type: Application
    Filed: December 14, 2023
    Publication date: April 18, 2024
    Inventors: Changming WANG, Fan YANG, Linna ZHANG, Bingxi LIN, Changyu GUO, Fang LIU, Zisheng LIU, Tian LAN, Fabin LIU, Zhengzhe ZHANG, Siyu HOU, Yao WANG
  • Publication number: 20240126975
    Abstract: A method of data processing for an application includes displaying service data in a first display area of a first application display interface; displaying first online document information in a second display area of a first application display interface, the first online document carrying a file required for processing the service data; and processing the service data in response to a first operation initiated based on the content carried by the first online document. The method of data processing for an application displays business data and the first online document in the first display area and the second display area respectively, and operates the business data based on the first operation initiated by the content carried by the first online document, so that the processing method of business data is associated with the content carried by the first online document, thereby improving the flexibility and convenience of business data processing.
    Type: Application
    Filed: December 26, 2023
    Publication date: April 18, 2024
    Inventors: Changming Wang, Fan Yang, Linna Zhang, Bingxi Lin, Changyu Guo, Fang Liu, Zisheng Liu, Tian Lan, Fabin Liu, Zhengzhe Zhang, Siyu Hou, Yao Wang
  • Publication number: 20240127182
    Abstract: This disclosure provides a method and apparatus, terminal and storage medium for information processing. The method of information processing includes: receiving a first document for processing a business flow, the business flow comprising one or more business nodes; and when a predetermined operation is performed on a content of the first document, determining an associated person associated with at least one business node of the business flow based on the predetermined operation, and sending a notification message to the associated person.
    Type: Application
    Filed: December 27, 2023
    Publication date: April 18, 2024
    Inventors: Changming Wang, Fan Yang, Linna Zhang, Bingxi Lin, Changyu Guo, Fang Liu, Zisheng Liu, Tian Lan, Fabin Liu, Zhengzhe Zhang, Siyu Hou, Yao Wang
  • Publication number: 20240126106
    Abstract: A dimming member includes a first electrode, a second electrode, and a dimming film. The dimming film includes a first substrate, a first conductive layer, a dimming layer, a second conductive layer, and a second substrate that are stacked in sequence. The dimming layer, the first conductive layer, and the second conductive layer cooperatively define an accommodating space. The first electrode and the second electrode are disposed in the accommodating space. The first electrode is attached to the first conductive layer at one side of the first conductive layer away from the first substrate and is electrically connected to the first conductive layer. The second electrode is attached to the second conductive layer at one side of the second conductive layer away from the second substrate and is electrically connected to the second conductive layer.
    Type: Application
    Filed: December 27, 2023
    Publication date: April 18, 2024
    Applicant: FUYAO GLASS INDUSTRY GROUP CO., LTD.
    Inventors: Fang SHUI, Shou LIN, Tao FENG, Jiafu WANG, Guoxin ZHENG
  • Publication number: 20240126724
    Abstract: The disclosure relates to the field of computers, and particularly to a method, apparatus, electronic device and storage medium for information processing. The method of information processing provided in the present disclosure includes: at a time before the end of a service processing flow about a first file, determining a save strategy for the first file in response to a user operation, so that the first file is saved based on the save strategy after the end of the service processing flow.
    Type: Application
    Filed: December 27, 2023
    Publication date: April 18, 2024
    Inventors: Changming Wang, Fan Yang, Linna Zhang, Bingxi Lin, Changyu Guo, Fang Liu, Zisheng Liu, Tian Lan, Fabin Liu, Zhengzhe Zhang, Siyu Hou, Yao Wang
  • Publication number: 20240126901
    Abstract: The disclosure provides a method, apparatus, terminal and storage medium for service processing based on an online document. The method includes: determining a first application; establishing an association between the first application and a first online document; and performing a first processing on the first online document according to the information related to the first application. The information processing method provided by embodiments of the present disclosure can process the first online document based on the information related to the first application, so that the data processing of the first online document can adapt to the service logic of the first application itself. While fully utilizing the characteristics of openness and easy collaboration of the online document, the online document can reflect or adapt to the service logic, and improve the flexibility and stability of the service.
    Type: Application
    Filed: December 27, 2023
    Publication date: April 18, 2024
    Inventors: Changming Wang, Fan Yang, Linna Zhang, Bingxi Lin, Changyu Guo, Fang Liu, Zisheng Liu, Tian Lan, Fabin Liu, Zhengzhe Zhang, Siyu Hou, Yao Wang
  • Publication number: 20240116033
    Abstract: The present invention relates to the technical field of catalyst preparation, disclosing a preparation method and application of a coated vanadium-tungsten-titanium oxide monolithic SCR catalyst. The method includes the steps of mixing a vanadium oxide precursor, a tungsten oxide precursor, titanium dioxide, an inorganic adhesive, an organic adhesive and a macromolecular surfactant with deionized water and stirring them to obtain a thick liquid; adding a pH adjuster to the thick liquid to make its pH 1.5-4.5; impregnating a cordierite honeycomb carrier in the thick liquid to obtain a preliminarily-impregnated catalyst and dried and calcined the preliminarily-impregnated catalyst to obtain a finished catalyst. The method has advantages such as simple operation, easy repetition and short time-consuming, so it can be applied to exhaust gas post-treatment of a marine diesel engine, and provide a good choice for catalysts used to denitrify medium and high temperature exhausted gas from marine engines.
    Type: Application
    Filed: December 14, 2023
    Publication date: April 11, 2024
    Inventors: Mingyu GUO, Yidan HUANG, Boqun LIU, Shaoping CUI, Shipei DONG, Siqi CHEN, Bin LIU, Yingjie ZHAO, Fang LIN, Zhonghua TIAN, Junjie ZHAO, Wei YE, Yanjie WEI, Zhipeng ZHANG
  • Publication number: 20240121722
    Abstract: An example device is to monitor communications throughput rates and select modulation and coding protocols in order to minimize specific absorption rates experienced by users of the devices by minimizing or reducing transmission power settings.
    Type: Application
    Filed: March 12, 2021
    Publication date: April 11, 2024
    Applicant: Hewlett-Packard Development Company, L.P.
    Inventors: I-Chen Lin, Chung-Chun Chen, Cheng-Fang Lin, Hung-Wen Cheng, Isaac Lagnado, Leo Joseph Gerten
  • Patent number: 11955026
    Abstract: A method, computer program product, and computer system for public speaking guidance is provided. A processor retrieves speaker data regarding a speech made by a user. A processor separates the speaker data into one or more speaker modalities. A processor extracts one or more speaker features from the speaker data for the one or more speaker modalities. A processor generates a performance classification based on the one or more speaker features. A processor sends to the user guidance regarding the speech based on the performance classification.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: April 9, 2024
    Assignee: International Business Machines Corporation
    Inventors: Cheng-Fang Lin, Ching-Chun Liu, Ting-Chieh Yu, Yu-Siang Chen, Ryan Young
  • Patent number: 11954453
    Abstract: Systems and methods for natural language generation by an edge computing device are disclosed. In one embodiments, a method comprises: receiving, by an edge computing device, event data from an edge event; determining, by the edge computing device, that a network connection to a cloud server is not available; extracting, by the edge computing device, features of the event data; predicting, by a local neural network of the edge computing device, an action for the edge computing device to take based on the features of the event data, wherein the action is associated with a confidence level; and determining, by the edge computing device, whether the confidence level meets a predetermined threshold value.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: April 9, 2024
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Chih-Hsiung Liu, I-Chien Lin, Cheng-Fang Lin, Joey H. Y. Tseng
  • Publication number: 20240113695
    Abstract: A modulation device including a plurality of electronic elements, at least one first signal line and a first driving circuit is provided. The at least one first signal line is respectively electrically connected to at least one of the electronic elements. The first driving circuit is electrically connected to the at least one first signal line. The first driving circuit provides a first signal to at least one of the at least one first signal line. The first signal includes a first pulse. The first pulse includes a first section and a second section closely adjacent to the first section.
    Type: Application
    Filed: August 30, 2023
    Publication date: April 4, 2024
    Applicant: Innolux Corporation
    Inventors: Yi-Hung Lin, Kung-Chen Kuo, Yu-Chia Huang, Nai-Fang Hsu
  • Publication number: 20240112912
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: July 28, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Yu-Fang TSENG, Pin-Chia LIAO, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • Publication number: 20240113221
    Abstract: A fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. The FinFET device structure includes a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The FinFET device structure also includes a metal silicide layer over the S/D structure, and the metal silicide layer is in contact with the isolation structure.
    Type: Application
    Filed: November 28, 2023
    Publication date: April 4, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Hsiung TSAI, Shahaji B. MORE, Cheng-Yi PENG, Yu-Ming LIN, Kuo-Feng YU, Ziwei FANG
  • Publication number: 20240103298
    Abstract: An optical lens includes an optical zone, and the optical zone includes a relax zone, a distance zone, and a defocus zone. The distance zone surrounds the relax zone. The defocus zone surrounds the distance zone and the relax zone. The diopter of the relax zone reduces along a direction from a center of the optical zone to an edge of the optical zone.
    Type: Application
    Filed: December 27, 2021
    Publication date: March 28, 2024
    Inventors: Yi-Fang HUANG, Shih-Siang LIN
  • Publication number: 20240106548
    Abstract: The present disclosure provides intelligent radio frequency interference mitigation in a computing platform. The computing platform includes a processor, a memory, a system clock and a wireless network interface. The system clock can be controlled so that the processor and/or the memory may operate at a slow frequency or a fast frequency. The wireless network may operate on a radio channel that experiences radio frequency interference at the fast frequency. The system clock may be intelligently controlled to select the slow frequency to reduce radio frequency interference to prioritize execution of a network application, or to select the fast frequency to increase processor speed and prioritize execution of a local application.
    Type: Application
    Filed: September 22, 2022
    Publication date: March 28, 2024
    Inventors: Ruei-Ting LIN, Cheng-Fang LIN, Huai-yung YEN, Ren-Hao CHEN, Lo-Chun TUNG
  • Publication number: 20240091655
    Abstract: This application provides a method, apparatus, electronic device, and storage medium for game data processing. The method includes: in response to a sharing instruction on a first page of a game application, obtaining data to be shared generated in the game application; jumping to a first target application and presenting a second page of the first target application, a preview of the data to be shared being displayed on the second page; adding a sticker to the data to be shared, the sticker being used to, after being triggered, perform a predetermined processing in a second target application on a terminal device that triggers the sticker; in response to an editing instruction performed on the sticker, editing the sticker; and publishing the data to be shared with the sticker in the first target application for sharing.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Inventors: Xuancheng ZHOU, Shangyong DONG, Yaotian LIN, Muyang LI, Bin QIU, Xuliu YAN, Fang ZHANG
  • Publication number: 20240094282
    Abstract: A circuit test structure includes a chip including a conductive line which traces a perimeter of the chip. The circuit test structure further includes an interposer electrically connected to the chip, wherein the conductive line is over both the chip and the interposer. The circuit test structure further includes a test structure connected to the conductive line. The circuit test structure further includes a testing site, wherein the test structure is configured to electrically connect the testing site to the conductive line.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 21, 2024
    Inventors: Ching-Fang CHEN, Hsiang-Tai LU, Chih-Hsien LIN
  • Publication number: 20240096712
    Abstract: Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.
    Type: Application
    Filed: January 10, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Wei Jiang, Chieh-Fang Chen, Yen-Chung Ho, Pin-Cheng Hsu, Feng-Cheng Yang, Chung-Te Lin
  • Patent number: 11935769
    Abstract: The present disclosure provides a chemical supply system, including a chamber, a tubing extending into the chamber, an interlock apparatus, including a fixture for fastening the tubing, and means for determining whether the tubing is fastened by the fixture.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Fang-Pin Chiang, Tsung-Lin Tsai, Chaoyen Huang, Yi Chuan Chen
  • Patent number: 11937426
    Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Feng-Ching Chu, Feng-Cheng Yang, Katherine H. Chiang, Chung-Te Lin, Chieh-Fang Chen