Patents by Inventor Farhad K. Moghadam
Farhad K. Moghadam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145230Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.Type: ApplicationFiled: October 28, 2022Publication date: May 2, 2024Applicant: Applied Materials, Inc.Inventors: Abhishek Mandal, Nitin Deepak, Geetika Bajaj, Ankur Kadam, Gopi Chandran Ramachandran, Suraj Rengarajan, Farhad K. Moghadam, Deenesh Padhi, Srinivas M. Satya, Manish Hemkar, Vijay Tripathi, Darshan Thakare
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Patent number: 7799698Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: GrantFiled: June 5, 2006Date of Patent: September 21, 2010Assignee: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N. Pham, Farhad K. Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 7691753Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: GrantFiled: June 5, 2006Date of Patent: April 6, 2010Assignee: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N. Pham, Farhad K. Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 7514353Abstract: Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process.Type: GrantFiled: March 20, 2006Date of Patent: April 7, 2009Assignee: Applied Materials, Inc.Inventors: Timothy W. Weidman, Kapila P. Wijekoon, Zhize Zhu, Avgerinos V. (Jerry) Gelatos, Amit Khandelwal, Arulkumar Shanmugasundram, Michael X. Yang, Fang Mei, Farhad K. Moghadam
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Patent number: 7399388Abstract: A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.Type: GrantFiled: July 25, 2003Date of Patent: July 15, 2008Assignee: Applied Materials, Inc.Inventors: Farhad K. Moghadam, Michael S. Cox, Padmanabhan Krishnaraj, Thanh N. Pham
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Patent number: 7227244Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.Type: GrantFiled: August 24, 2004Date of Patent: June 5, 2007Assignee: Applied Materials, Inc.Inventors: Claes H. Bjorkman, Melissa Min Yu, Hongquing Shan, David W. Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Gazala Chapra, Gerald Yin, Farhad K. Moghadam, Judy H. Huang, Dennis Yost, Betty Tang, Yunsang Kim
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Patent number: 7160821Abstract: A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.Type: GrantFiled: January 27, 2004Date of Patent: January 9, 2007Assignee: Applied Materials, Inc.Inventors: Tzu-Fang Huang, Yung-Cheng Lu, Li-Qun Xia, Ellie Yieh, Wai-Fan Yau, David W. Cheung, Ralf B. Willecke, Kuowei Liu, Ju-Hyung Lee, Farhad K. Moghadam, Yeming Jim Ma
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Patent number: 7151053Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.Type: GrantFiled: April 28, 2005Date of Patent: December 19, 2006Assignee: Applied Materials, Inc.Inventors: Ju-Hyung Lee, Ping Xu, Shankar Venkataraman, Li-Qun Xia, Fei Han, Ellie Yieh, Srinivas D. Nemani, Kangsub Yim, Farhad K. Moghadam, Ashok K. Sinha, Yi Zheng
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Patent number: 7097886Abstract: A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.Type: GrantFiled: December 13, 2002Date of Patent: August 29, 2006Assignee: Applied Materials, Inc.Inventors: Farhad K. Moghadam, Michael S. Cox, Padmanabhan Krishnaraj, Thanh N. Pham, Zhenjiang Cui
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Patent number: 7081414Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: GrantFiled: May 23, 2003Date of Patent: July 25, 2006Assignee: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N Pham, Farhad K Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 6958112Abstract: Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.Type: GrantFiled: May 27, 2003Date of Patent: October 25, 2005Assignee: Applied Materials, Inc.Inventors: M. Ziaul Karim, Farhad K. Moghadam, Siamak Salimian
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Patent number: 6890850Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.Type: GrantFiled: July 15, 2002Date of Patent: May 10, 2005Assignee: Applied Materials, Inc.Inventors: Ju-Hyung Lee, Ping Xu, Shankar Venkataraman, Li-Qun Xia, Fei Han, Ellie Yieh, Srinivas D. Nemani, Kangsub Yim, Farhad K. Moghadam, Ashok K. Sinha, Yi Zheng
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Patent number: 6858153Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.Type: GrantFiled: November 5, 2001Date of Patent: February 22, 2005Assignee: Applied Materials Inc.Inventors: Claes H. Bjorkman, Min Melissa Yu, Hongquing Shan, David W. Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Gazala Chapra, Gerald Yin, Farhad K. Moghadam, Judy H. Huang, Dennis Yost, Betty Tang, Yunsang Kim
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Publication number: 20040251236Abstract: A deposition / etching /deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition /etching /deposition process is begun.Type: ApplicationFiled: May 23, 2003Publication date: December 16, 2004Applicant: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N. Pham, Farhad K. Moghadam, Shuang Li, Padmanabhan Krishnaraj
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Publication number: 20040241342Abstract: Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.Type: ApplicationFiled: May 27, 2003Publication date: December 2, 2004Applicant: Applied Materials, Inc.Inventors: M. Ziaul Karim, Farhad K. Moghadam, Siamak Salimian
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Patent number: 6806207Abstract: A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.Type: GrantFiled: February 25, 2003Date of Patent: October 19, 2004Assignee: Applied Materials Inc.Inventors: Tzu-Fang Huang, Yung-Cheng Lu, Li-Qun Xia, Ellie Yieh, Wai-Fan Yau, David W. Cheung, Ralf B. Willecke, Kuowei Liu, Ju-Hyung Lee, Farhad K. Moghadam, Yeming Jim Ma
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Publication number: 20040115898Abstract: A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.Type: ApplicationFiled: December 13, 2002Publication date: June 17, 2004Applicant: Applied Materials, Inc.Inventors: Farhad K. Moghadam, Michael S. Cox, Padmanabhan Krishnaraj, Thanh N. Pham, Zhenjiang Cui
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Publication number: 20040018070Abstract: Embodiments of the present invention are directed to substrate processing systems having substrate transferring mechanisms that are compact, have small footprints, and provide fast and efficient substrate transfer to achieve high throughput. In specific embodiments, a unit slab construction is used for the chambers around the substrate transferring mechanism, enabling efficient system construction with improved alignment and at a lower cost. The chambers may share gas, pump, and other utilizes. In one embodiment, an apparatus for processing substrates includes at least three robot blades each configured to support a substrate. A robot is coupled with the at least three robot blades to simultaneously move the robot blades between at least three chambers and simultaneously transfer each of the substrates supported on the robot blades from one chamber to another chamber.Type: ApplicationFiled: July 25, 2002Publication date: January 29, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Jun Zhao, Satish Sundar, Vinay K. Shah, Hari K. Ponnekanti, Mario Dave Silvetti, Michael Robert Rice, Avi Tepman, Farhad K. Moghadam
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Patent number: 6669858Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.Type: GrantFiled: November 5, 2001Date of Patent: December 30, 2003Assignee: Applied Materials Inc.Inventors: Claes H. Bjorkman, Min Melissa Yu, Hongquing Shan, David W. Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Gazala Chapra, Gerald Yin, Farhad K. Moghadam, Judy H. Huang, Dennis Yost, Betty Tang, Yunsang Kim
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Publication number: 20030162410Abstract: A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.Type: ApplicationFiled: February 25, 2003Publication date: August 28, 2003Applicant: Applied Materials, Inc.Inventors: Tzu-Fang Huang, Yung-Cheng Lu, Li-Qun Xia, Ellie Yieh, Wai-Fan Yau, David W. Cheung, Ralf B. Willecke, Kuowei Liu, Ju-Hyung Lee, Farhad K. Moghadam, Yeming Jim Ma