Patents by Inventor Fariba DANESH

Fariba DANESH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10998465
    Abstract: A light emitting device includes a substrate including a doped compound semiconductor layer, a mesa structure located on the doped compound semiconductor layer and containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, a second-conductivity-type compound semiconductor layer, and a transparent conductive oxide layer, and a dielectric material layer laterally surrounding the mesa structure and including an upper portion that overlies a peripheral region of the mesa structure and extending above the transparent conductive oxide layer, wherein an opening in the upper portion of the dielectric material layer is located over a center region of the mesa structure.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: May 4, 2021
    Assignee: GLO AB
    Inventors: Fariba Danesh, Cameron Dean Danesh, Tsun Lau
  • Publication number: 20210074775
    Abstract: A light emitting device includes a first light emitting diode configured to emit light at a first peak wavelength, a second light emitting diode configured to emit light at a second peak wavelength that is different from the first peak wavelength, and a third light emitting diode including, from bottom to top, a lower electrode, an organic light emitting material portion, and an upper electrode, where the third light emitting diode is configured to emit light at a third peak wavelength that is different from the first and second peak wavelengths. A pattern definition layer which includes an opaque material covers at least a portion of the organic light emitting material portion and includes an opening overlying the organic light emitting material portion.
    Type: Application
    Filed: September 11, 2019
    Publication date: March 11, 2021
    Inventors: Timothy GALLAGHER, Brian KIM, Fariba DANESH
  • Publication number: 20210066550
    Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
    Type: Application
    Filed: September 24, 2020
    Publication date: March 4, 2021
    Inventors: Fariba DANESH, Tsun LAU, Richard P. SCHNEIDER, JR., Michael JANSEN, Max BATRES
  • Publication number: 20200403121
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 24, 2020
    Inventors: Fariba Danesh, Richard P. Schneider, JR., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20200388721
    Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.
    Type: Application
    Filed: August 24, 2020
    Publication date: December 10, 2020
    Inventors: Zhen CHEN, Fariba DANESH, Fan REN, Shuke YAN
  • Publication number: 20200381411
    Abstract: A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.
    Type: Application
    Filed: May 27, 2020
    Publication date: December 3, 2020
    Inventors: Willibrordus Gerardus Maria VAN DEN HOEK, Tsun Yin LAU, Cameron DANESH, Fariba DANESH
  • Patent number: 10804436
    Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: October 13, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Tsun Lau, Richard P. Schneider, Jr., Michael Jansen, Max Batres
  • Publication number: 20200321391
    Abstract: A white LED and a method of repairing a light emitting device including, the method including colored light emitting diodes (LEDs) configured to emit different colors of light and arranged in pixels on a backplane of the device, the method including: determining whether each pixel is a functional pixel or a defective pixel; and repairing the defective pixels by transferring white LEDs to the backplane in each defective pixel.
    Type: Application
    Filed: April 1, 2020
    Publication date: October 8, 2020
    Inventors: Fariba DANESH, Zhen CHEN
  • Patent number: 10797202
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: October 6, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10770620
    Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: September 8, 2020
    Assignee: GLO AB
    Inventors: Zhen Chen, Fariba Danesh, Fan Ren, Shuke Yan
  • Publication number: 20200274029
    Abstract: A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.
    Type: Application
    Filed: April 10, 2019
    Publication date: August 27, 2020
    Inventors: Richard P. Schneider, JR., Benjamin Leung, Fariba Danesh, Zulal Tezcan Ozel, Miao-Chan Tsai
  • Patent number: 10707374
    Abstract: A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: July 7, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Benjamin Leung, Tsun Lau, Zulal Tezcan, Miao-Chan Tsai, Max Batres, Michael Joseph Cich
  • Patent number: 10707190
    Abstract: A backplane can have a non-planar top surface. Insulating material portions including planar top surface regions located within a same horizontal plane are formed over the backplane. A two-dimensional array of metal plate clusters is formed over the insulating material portions. Each of the metal plate clusters includes a plurality of metal plates. Each metal plate includes a horizontal metal plate portion overlying a planar top surface region and a connection metal portion connected to a respective metal interconnect structure in the backplane. A two-dimensional array of light emitting device clusters is bonded to the backplane through respective bonding structures. Each light emitting device cluster includes a plurality of light emitting devices overlying a respective metal plate cluster.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: July 7, 2020
    Assignee: GLO AB
    Inventors: Tsun Lau, Fariba Danesh, Timothy Gallagher, Anusha Pokhriyal
  • Publication number: 20200176634
    Abstract: A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.
    Type: Application
    Filed: November 15, 2019
    Publication date: June 4, 2020
    Inventors: Max BATRES, Fariba DANESH, Michael J. CICH, Zhen CHEN
  • Publication number: 20200127168
    Abstract: A light emitting diode includes a first conductivity type semiconductor material region, an active region located over the first conductivity type semiconductor material region, a second conductivity type semiconductor material layer located over the active region, a first layer containing at least one of nickel or gold located over the second conductivity type semiconductor material layer, a reflective top contact electrode located over the first layer, a dielectric material layer located over the top contact electrode and containing an opening, and a reflector located over the dielectric material layer and contacting the top contact electrode through the opening in the dielectric material layer.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Inventors: Fariba DANESH, Tsun LAU
  • Publication number: 20200119229
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: December 12, 2019
    Publication date: April 16, 2020
    Inventors: Fariba Danesh, Richard P. Schneider, JR., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20200075803
    Abstract: A light emitting device includes a substrate including a doped compound semiconductor layer, a mesa structure located on the doped compound semiconductor layer and containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, a second-conductivity-type compound semiconductor layer, and a transparent conductive oxide layer, and a dielectric material layer laterally surrounding the mesa structure and including an upper portion that overlies a peripheral region of the mesa structure and extending above the transparent conductive oxide layer, wherein an opening in the upper portion of the dielectric material layer is located over a center region of the mesa structure.
    Type: Application
    Filed: November 11, 2019
    Publication date: March 5, 2020
    Inventors: Fariba DANESH, Cameron Dean DANESH, Tsun LAU
  • Patent number: 10566499
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: February 18, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10553767
    Abstract: An LED subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed. An opening is formed through the dielectric material layer over the array of nanowires. The reflector layer can be formed around the array of nanowires and through the opening in the dielectric material layer on the transparent conductive oxide layer. A conductive bonding structure is formed in electrical contact with the reflector layer.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: February 4, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Nathan F. Gardner, Jonathan J. Wierer, Jr.
  • Publication number: 20190386173
    Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.
    Type: Application
    Filed: May 6, 2019
    Publication date: December 19, 2019
    Inventors: Zhen CHEN, Fariba DANESH, Fan REN, Shuke YAN