Patents by Inventor Faris Modawar

Faris Modawar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180350908
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Application
    Filed: August 3, 2018
    Publication date: December 6, 2018
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar
  • Publication number: 20180323321
    Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.
    Type: Application
    Filed: July 17, 2018
    Publication date: November 8, 2018
    Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
  • Publication number: 20180090568
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Application
    Filed: November 29, 2017
    Publication date: March 29, 2018
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar
  • Patent number: 9859366
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: January 2, 2018
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar
  • Patent number: 9448156
    Abstract: A system and method for determining particle size, shape, and/or quantity. The particle can alter the polarization state of two oppositely-polarized light beams, thus allowing the light beams to interfere with each other. An interference pattern from interference of the two light beams can be captured by a CCD. The interference pattern can be analyzed to determine size, shape, and/or quantity.
    Type: Grant
    Filed: January 27, 2015
    Date of Patent: September 20, 2016
    Assignee: Moxtek, Inc.
    Inventor: Faris Modawar
  • Publication number: 20160049471
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Application
    Filed: October 27, 2015
    Publication date: February 18, 2016
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar
  • Patent number: 9202868
    Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: December 1, 2015
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Brent Buchine, Marcie R. Black, Faris Modawar
  • Publication number: 20150340526
    Abstract: In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.
    Type: Application
    Filed: August 3, 2015
    Publication date: November 26, 2015
    Inventors: Faris Modawar, Marcie R. Black, Brian P. Murphy, Jeffrey B. Miller, Michael Jura
  • Publication number: 20150268151
    Abstract: A system and method for determining particle size, shape, and/or quantity. The particle can alter the polarization state of two oppositely-polarized light beams, thus allowing the light beams to interfere with each other. An interference pattern from interference of the two light beams can be captured by a CCD. The interference pattern can be analyzed to determine size, shape, and/or quantity.
    Type: Application
    Filed: January 27, 2015
    Publication date: September 24, 2015
    Inventor: Faris Modawar
  • Patent number: 9136410
    Abstract: Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.
    Type: Grant
    Filed: August 24, 2014
    Date of Patent: September 15, 2015
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
  • Patent number: 9099583
    Abstract: In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: August 4, 2015
    Assignee: BANDGAP ENGINEERING, INC.
    Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
  • Patent number: 8945794
    Abstract: A process is provided for etching a silicon-containing substrate. In the process, the surface of the substrate is cleaned. A film of alumina is deposited on the cleaned substrate surface. A silver film is deposited above the film of alumina. An etchant comprising HF is contacted with the silver film.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: February 3, 2015
    Inventors: Faris Modawar, Jeff Miller, Mike Jura, Brian Murphy, Marcie Black, Brent A. Buchine
  • Publication number: 20140366934
    Abstract: Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.
    Type: Application
    Filed: August 24, 2014
    Publication date: December 18, 2014
    Applicant: BANDGAP ENGINEERING, INC.
    Inventors: Faris MODAWAR, Marcie R. BLACK, Brian MURPHY, Jeff MILLER, Mike JURA
  • Publication number: 20140335412
    Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.
    Type: Application
    Filed: July 28, 2014
    Publication date: November 13, 2014
    Applicant: BANDGAP ENGINEERING, INC.
    Inventors: Brent Buchine, Marcie R. Black, Faris Modawar
  • Publication number: 20140252564
    Abstract: A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is submerged into an etchant aqueous solution comprising about 4 to about 49 weight percent HF and an oxidizing agent such as about 0.5 to about 30 weight percent H2O2, thus producing a metallized substrate with one or more trenches. A second silicon etch is optionally employed to remove nanowires inside the one or more trenches.
    Type: Application
    Filed: May 23, 2014
    Publication date: September 11, 2014
    Applicant: BANDGAP ENGINEERING, INC.
    Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
  • Patent number: 8829485
    Abstract: Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: September 9, 2014
    Assignee: Bandgap Engineering, Inc.
    Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
  • Patent number: 8791449
    Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.
    Type: Grant
    Filed: November 28, 2011
    Date of Patent: July 29, 2014
    Assignee: Bandgap Engineering, Inc.
    Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
  • Patent number: 8734659
    Abstract: A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is submerged into an etchant aqueous solution comprising about 4 to about 49 weight percent HF and an oxidizing agent such as about 0.5 to about 30 weight percent H2O2, thus producing a metallized substrate with one or more trenches. A second silicon etch is optionally employed to remove nanowires inside the one or more trenches.
    Type: Grant
    Filed: October 9, 2009
    Date of Patent: May 27, 2014
    Assignee: Bandgap Engineering Inc.
    Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
  • Publication number: 20130247966
    Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.
    Type: Application
    Filed: May 24, 2013
    Publication date: September 26, 2013
    Applicant: Bandgap Engineering, Inc.
    Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
  • Patent number: 8450599
    Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: May 28, 2013
    Assignee: Bandgap Engineering, Inc.
    Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black