Patents by Inventor Faris Modawar
Faris Modawar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8829485Abstract: Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.Type: GrantFiled: January 18, 2012Date of Patent: September 9, 2014Assignee: Bandgap Engineering, Inc.Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
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Patent number: 8791449Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.Type: GrantFiled: November 28, 2011Date of Patent: July 29, 2014Assignee: Bandgap Engineering, Inc.Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
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Patent number: 8734659Abstract: A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is submerged into an etchant aqueous solution comprising about 4 to about 49 weight percent HF and an oxidizing agent such as about 0.5 to about 30 weight percent H2O2, thus producing a metallized substrate with one or more trenches. A second silicon etch is optionally employed to remove nanowires inside the one or more trenches.Type: GrantFiled: October 9, 2009Date of Patent: May 27, 2014Assignee: Bandgap Engineering Inc.Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
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Publication number: 20130247966Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.Type: ApplicationFiled: May 24, 2013Publication date: September 26, 2013Applicant: Bandgap Engineering, Inc.Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
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Patent number: 8450599Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.Type: GrantFiled: November 16, 2009Date of Patent: May 28, 2013Assignee: Bandgap Engineering, Inc.Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
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Publication number: 20120301785Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.Type: ApplicationFiled: November 28, 2011Publication date: November 29, 2012Applicant: BANDGAP ENGINEERING INC.Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
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Publication number: 20120181502Abstract: In one aspect, the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure having a non-nanostructured surface, having a top surface and a bottom surface, located on the same side of the substrate as the array of silicon nanowires; and an electrical contact in contact with the top surface of the contacting structure. In some embodiments, the device includes an aluminum oxide passivation layer over the array of nanowires. In some embodiments, the layer of aluminum oxide is deposited via atomic layer deposition.Type: ApplicationFiled: January 18, 2012Publication date: July 19, 2012Applicant: Bandgap Engineering, Inc.Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
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Publication number: 20120153250Abstract: In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.Type: ApplicationFiled: January 18, 2012Publication date: June 21, 2012Applicant: Bandgap Engineering, Inc.Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
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Publication number: 20120153251Abstract: Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.Type: ApplicationFiled: January 18, 2012Publication date: June 21, 2012Applicant: Bandgap Engineering, Inc.Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
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Publication number: 20120156585Abstract: A process is provided for etching a silicon-containing substrate. In the process, the surface of the substrate is cleaned. A film of alumina is deposited on the cleaned substrate surface. A silver film is deposited above the film of alumina. An etchant comprising HF is contacted with the silver film.Type: ApplicationFiled: November 14, 2011Publication date: June 21, 2012Inventors: Faris Modawar, Jeff Miller, Mike Jura, Brian Murphy, Marcie Black, Brent A. Buchine
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Patent number: 8143143Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.Type: GrantFiled: April 14, 2009Date of Patent: March 27, 2012Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
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Publication number: 20110024169Abstract: In an aspect of the invention, a process to make a nanowire array is provided. In the process, silicon is deposited onto a conductive substrate comprising an organic material and optionally a conductive layer, thus forming a silicon-containing layer. Nanoparticles are deposited on top of the silicon-containing layer. Metal is deposited on top of the nanoparticles and silicon in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is contacted with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.Type: ApplicationFiled: July 28, 2010Publication date: February 3, 2011Inventors: Brent A. Buchine, Jeff Miller, Marcie R. Black, Faris Modawar
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Publication number: 20100122725Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.Type: ApplicationFiled: November 16, 2009Publication date: May 20, 2010Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
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Publication number: 20100092888Abstract: A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is submerged into an etchant aqueous solution comprising about 4 to about 49 weight percent HF and an oxidizing agent such as about 0.5 to about 30 weight percent H2O2, thus producing a metallized substrate with one or more trenches. A second silicon etch is optionally employed to remove nanowires inside the one or more trenches.Type: ApplicationFiled: October 9, 2009Publication date: April 15, 2010Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
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Publication number: 20090256134Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.Type: ApplicationFiled: April 14, 2009Publication date: October 15, 2009Inventors: Brent A. Buchine, Faris Modawar, Marcie R. Black
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Patent number: 4828965Abstract: An aqueous developing solution useful in developing positive-working photoresists comprising:______________________________________ A. Soluble Alkali Metal Phosphate 1.50-3.00% by weight B. Soluble Alkali Metal Silicate 1.00-2.00% by weight C. Mono (lower alkanol) amine 0.40-5.00% by weight D. Soluble Alkylene Glycol 0.25-3.00% by weight E. Lower Alkanol 0.05-1.00% by weight F.Type: GrantFiled: January 6, 1988Date of Patent: May 9, 1989Assignee: Olin Hunt Specialty Products Inc.Inventors: Richard J. West, Stephen F. Marcotte, Jr., Faris A. Modawar