Abstract: Embodiments of the present application provide a data processing method, system, device and storage medium, where a processing request for target data sent by a requesting party having an access permission is received; a first identifier of a first user to which the target data belongs and a second identifier of the requesting party are obtained; a data processing rule pre-agreed upon by the first user and the requesting party is searched for according to the first identifier and the second identifier; and when a processing operation specified by the processing request complies with the data processing rule, the target data is processed according to the data processing rule to feedback corresponding response information to the requesting party, which can meet processing requirements of the requesting party for the target data, and effectively improve security protection effect during a process in which the target data is secure processing.

Abstract: A ciphertext hybrid operation method and apparatus are disclosed.

Abstract: A database operating method and a fully encrypted database are disclosed. The method is executed by a read node in a write once read many database and includes: receiving a reading operation request from a user, determining that a writing operation is required for a data encryption key table in response to the reading operation request; establishing a connection with a write node and forwarding the writing operation; acquiring the data encryption key table that the write node has updated based on the writing operation; generating, based on the updated data encryption key table, a reading operation response and sending the reading operation response to the user. Thus, the present disclosure proposes a write once read many solution applicable to a fully encrypted database, which solves the problem of writing encryption key information of the read node in a distributed database scenario.

Abstract: A circuit board includes a substrate, a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer includes a plurality of first conductive portions. The second conductive layer includes a plurality of second conductive portions. A second conductive portion passes through a first via hole in the first insulating layer to be in electrical contact with a first conductive portion. The first conductive layer and the second conductive layer each include at least one main conductive layer, which is capable of creating a first intermetallic compound with solder. At least one of the first conductive layer and the second conductive layer further includes a stop layer capable of creating a second intermetallic compound with the solder. A rate of a reaction between the stop layer and the solder is lower than a rate of a reaction between the main conductive layer and the solder.

Abstract: Embodiments in the present description provide an operation request processing method and apparatus, and a device, and a readable storage medium, and a system. In the present embodiment, after obtaining an operation request for a data table, a read-write node can return a request processing completion message to a requester in time without waiting for all read-only nodes; a locking operation is performed on the data table, a log of locking the data table is written into a redo log file; and after status information of the log of locking is written into a status record, a monitoring processing process can achieve log playback monitoring of all the read-only nodes by using the status record and the log of locking. Thus, an asynchronous processing mechanism is achieved, and the stability and efficiency of operation request execution are improved.

Abstract: A display substrate, including: a base substrate; and a metal conductive layer, located at a side of the base substrate, and including a core conductive layer and a functional conductive layer laminated along a direction away from the base substrate; a material of the core conductive layer includes a conductive metal material; a material of the functional conductive layer includes a first diffusion barrier metal material and a first adhesion force enhancing metal material, wherein the first diffusion barrier metal material is configured to block diffusion of the conductive metal material, and the first adhesion force enhancing metal material is configured to enhance an adhesion force between the functional conductive layer and a photoresist used in a patterning process of the functional conductive layer; a surface energy of any of first adhesion force enhancing metal materials is less than or equal to 325 mJ/m2.

Abstract: A photoelectric sensor and a substrate are disclosed. The photoelectric sensor includes a photoelectric conversion layer, a first electrode and a second electrode, wherein the first electrode is arranged on a side of the photoelectric conversion layer, and the second electrode is arranged on a side of the photoelectric conversion layer and is spaced apart from the first electrode; wherein the first electrode and the second electrode are configured to drive the photoelectric conversion layer; and in a direction perpendicular to a surface of the photoelectric conversion layer, the first electrode and the second electrode are overlapped with the photoelectric conversion layer respectively, and the photoelectric conversion layer includes an oxide semiconductor material.

Abstract: A method and an apparatus for processing Bitmap data are provided by the embodiments of the present disclosure. The method for processing Bitmap data includes: dividing a Bitmap region in a disk into a plurality of partitions in advance and setting an update region in the disk; obtaining a respective amount of dirty data corresponding to each of the plurality of partitions in memory in response to a condition for writing back to the disk being satisfied; finding multiple second partitions with an amount of dirty data satisfying to be merged into the update region from the plurality of partitions according to the respective amount of dirty data corresponding to each of the plurality of partitions; and recording dirty data corresponding to the multiple second partitions in the memory into the update region in the disk through one or more I/O operations after merging.

Abstract: A light-emitting substrate and a display device are disclosed, the light-emitting substrate includes: a base substrate including a light-emitting region; a plurality of first pads on a side of the base substrate and in the light-emitting region, where a material of the first pads includes Cu; and an oxidation protection layer on a side of the first pads away from the base substrate, where the plurality of first pads is used for bonding connection with a plurality of light-emitting units through the oxidation protection layer, a material of the oxidation protection layer includes CuNiX, and X includes one or any combination of Al, Sn, Pb, Au, Ag, In, Zn, Bi, Mg, Ga, V, W, Y, Zr, Mo, Nb, Pt, Co or Sb.

Abstract: A needle aid device comprises an outer shell; an inner shell located in the outer shell and comprising an upper portion and a lower portion, a trigger shell passage penetrating through the upper portion and the lower portion being formed in the inner shell, and an inner diameter of the lower portion being greater than that of the upper portion; and a trigger module capable of moving in the trigger shell passage and used for clamping or releasing an emitter mechanism; wherein, in an initial state, the trigger module is locked on the upper portion; and when unlocked, the trigger module drives the emitter mechanism to move downward until the emitter mechanism is separated from the trigger module.

Abstract: A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

Abstract: Disclosed are a light-emitting substrate and a display device. In the light-emitting substrate, a first pad of a light-emitting area includes a first metal layer located above a base substrate and a second metal layer located on a side, facing away from the base substrate, of the first metal layer. A material of the second metal layer includes copper-nickel-titanium alloy, and a quantity of nickel atoms and/or titanium atoms contained per unit area in a cross section, farther from the base substrate, of the second metal layer is greater than a quantity of nickel atoms and/or titanium atoms contained per unit area in another cross section, closer to the base substrate, of the second metal layer.

Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.

Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.

Abstract: A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.