Abstract: A method of fabricating a semiconductor device is disclosed. The method includes the steps of: sequentially forming agate dielectric layer and a first gate layer on a semiconductor substrate, wherein the gate dielectric layer is between the first gate layer and the semiconductor substrate; forming at least an opening in the first gate layer; forming a first dielectric layer conformally on the semiconductor substrate wherein the first dielectric layer covers the first gate layer; and forming a second gate layer filling the opening and overlapping the first gate layer.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes the steps of: sequentially forming agate dielectric layer and a first gate layer on a semiconductor substrate, wherein the gate dielectric layer is between the first gate layer and the semiconductor substrate; forming at least an opening in the first gate layer; forming a first dielectric layer conformally on the semiconductor substrate wherein the first dielectric layer covers the first gate layer; and forming a second gate layer filling the opening and overlapping the first gate layer.

Abstract: A semiconductor device includes two floating gates, a control gate and a first dielectric layer. The floating gates are disposed on a semiconductor substrate. The control gate partially overlaps each of the floating gates, and a part of the control gate is disposed between the two floating gates. Furthermore, the first dielectric layer disposed between the two floating gates and the control gate has a fixed thickness.

Abstract: The present invention is directed to a process for the production of ion-exchanged (metal-doped, metal-exchanged) Zeolites and Zeotypes, In particular, the method applied uses a sublimation step to incorporate the ion within the channels of the Zeolitic material. Hence, according to this dry procedure no solvent is involved which obviates certain drawbacks connected with wet exchange processes known in the art.

Abstract: The present invention is directed to a process for the production of supported transition metals with high dispersion. The latter are deposited onto refractory oxides without using a further liquid solvent. Hence, according to this dry procedure no solvent is involved which obviates certain drawbacks connected with wet ion exchange, impregnation or other metal addition processes known in the art.

Abstract: A semiconductor device includes two floating gates, a control gate and a first dielectric layer. The floating gates are disposed on a semiconductor substrate. The control gate partially overlaps each of the floating gates, and a part of the control gate is disposed between the two floating gates. Furthermore, the first dielectric layer disposed between the two floating gates and the control gate has a fixed thickness.

Abstract: A fabricating method of a back-illuminated image sensor includes the following steps. First, a silicon wafer having a first surface and a second surface is provided, wherein a number of trench isolations are formed in the first surface, and at least one image sensing member is formed between the trench isolations. Then, a first chemical mechanical polishing (CMP) process is performed to the second surface using the trench isolations as a polishing stop layer to thin the silicon wafer. Because the polishing rate of the silicon material in the silicon wafer is different with that of the isolation material of the trench isolations in the first CMP process, at least one dishing depression is formed in the second surface of the silicon wafer. Finally, a microlens is formed above the dishing depression, and a surface of the microlens facing the dishing depression is a curved surface.

Abstract: The present invention is directed to a process for the production of ion-exchanged (metal-doped, metal-exchanged) Zeolites and Zeotypes, In particular, the method applied uses a sublimation step to incorporate the ion within the channels of the Zeolitic material. Hence, according to this dry procedure no solvent is involved which obviates certain drawbacks connected with wet exchange processes known in the art.

Abstract: A method of fabricating a flash memory and an isolating structure applied to a flash memory is provided. The feature of the method lies in a T-shaped shallow trench isolation (STI). The T-shaped STI has a widened cap covering on a substrate and a tapered bottom embedded in the substrate. The widened cap of the T-shaped STI can provide a high process widow when fabricating the floating gate wings, and the product yield will thereby be increased.

Abstract: A method of fabricating a flash memory and an isolating structure applied to a flash memory is provided. The feature of the method lies in a T-shaped shallow trench isolation (STI). The T-shaped STI has a widened cap covering on a substrate and a tapered bottom embedded in the substrate. The widened cap of the T-shaped STI can provide a high process widow when fabricating the floating gate wings, and the product yield will thereby be increased.

Abstract: An image sensor, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.

Abstract: An image sensor and a method of manufacturing the same, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.

Abstract: An electronic apparatus includes an optical drive and a second housing. In this case, the optical drive has a first housing, a circuit board, a first button, and a second button. The circuit board is disposed in the first housing. The first button is disposed on the first housing and the first button electrically connects with the circuit board. The optical drive is disposed in the second housing. The second button electrically connects with the circuit board with a wire. The second button, which controls the optical drive, is disposed on the second housing.

Abstract: An image sensor, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.

Abstract: The present invention relates to the use of at least one gold nanocluster compound in the manufacture of a pharmaceutical composition or medicament for the prophylactic and/or therapeutic (curative) treatment of a disease, especially a tumor and/or cancer disease. The gold nanocluster compound having a defined particle size, especially a defined size of the core of said gold nanocluster compound, the size ranging from 0.5 nm to 10 nm, the outer limits of this range being included. Especially, the gold nanocluster compounds used possess size-dependent cytotoxic properties, stimulating or inducing cellular death when treating and/or contacting respective cells, especially tumor and/or cancer cells, with the gold nanocluster compounds either via apoptosis or via necrosis, depending on the respective gold cluster size or core size.

Abstract: The impedance measuring device of the present invention is a self-operated pressure point impedance measuring device. The device can quantitatively measure the impedance of the pressure point in digital format. The qualified impedance data can be on-line interface to a PC computer for recording and further application using USB protocol. The configuration of device includes a hand-held body or with a parallel connected unit as a current loop; a flexible round point as a measuring point, and an impedance sensing circuitry. This impedance measuring device of the present invention can significantly provide convenience to the users for measuring the impedance.

Abstract: An image sensor and a method of manufacturing the same, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.

Abstract: A method for setting system working frequency includes the steps of: executing assert reset; modulating the system working frequency according to set values of BIOS through a jumper-free IC; deasserting reset and starting CPU; and proceeding and completing subsequent initialization process.

Abstract: An electronic apparatus includes an optical drive and a second housing. In this case, the optical drive has a first housing, a circuit board, a first button, and a second button. The circuit board is disposed in the first housing. The first button is disposed on the first housing and the first button electrically connects with the circuit board. The optical drive is disposed in the second housing. The second button electrically connects with the circuit board with a wire. The second button, which controls the optical drive, is disposed on the second housing.

Abstract: A modularized custom-developed software package producing method and system is proposed, which is capable of automatically producing a custom-developed software package based on customer-designated specifications; and which is characterized by the provision of all required functional and data objects as modularized objects, including a software core module object, a group of functional module objects, and a group of custom-made module objects, which can be selectively chosen to be gathered and combined into an integrated code package serving as the intended custom-developed software package. The proposed method and system allows the overall software development process to be less laborious and time-consuming and thus more efficient to implement, and can help prevent confidential business documents and data files that are embedded in the custom-developed software package from unauthorized access and tampering.