Abstract: A method for reconstructing a dose distribution for a region of interest includes determining a predicted source intensity distribution of a radiation source; determining a calculated transmission dose distribution based on the predicted source intensity distribution; determining a target source intensity distribution based on the calculated transmission dose distribution and the predicted source intensity distribution; and reconstructing the dose distribution of the region of interest based on the target source intensity distribution.

Abstract: A pool cleaning system is provided. The system comprises a video capture device, a pool cleaning robot separated from the video capture device, and a computing device. The video capture device can transmit one or more videos of a pool to the computing device. The computing device can determine a position of the pool cleaning robot relative to the pool using the one or more videos. The computing device can generate a moving instruction for the pool cleaning robot, based on the position of the pool cleaning robot.

Abstract: Embodiments of this application provide a laser scanning apparatus, which is a key component of a Lidar and may be used in fields such as autonomous driving and intelligent driving. The scanning apparatus includes: a scanning micromirror chip, a packaging shell, and a packaging component. The scanning micromirror chip includes a scanning micromirror and a laser, where the scanning micromirror and the laser are integrated at different positions of the scanning micromirror chip. The packaging shell is located on the scanning micromirror chip, and forms a hollow structure together with the scanning micromirror chip. Both the laser and the packaging component are located in the hollow structure. In addition, the packaging component is fixed on the packaging shell, and is configured to collimate and reflect a beam emitted by the laser, and emit an output beam to the scanning micromirror.

Abstract: The present disclosure provides a video processing method, apparatus and electronic device. The method includes: acquiring a first video; processing the first video based on a video processing model to obtain a second video, wherein a training stage of the video processing model includes a differentiable encoder which is configured to simulate quantization and encoding processes performed by an encoder on a video, and the differentiable encoder is capable of performing gradient backpropagation; and encoding the second video.

Abstract: A fin field-effect transistor device with hybrid conduction mechanism, including a fin field-effect transistor, a second source region, and a second drain region; the fin field-effect transistor includes a substrate, a fin channel region, a first source region, and a first drain region; the height of the second source region is not lower than the height of the substrate between the first source region and the first drain region; the first source region, the first drain region and the second drain region are doped with first ions; the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region, the second source region is doped with second ions. This scheme can realize hybrid conduction of fin channel diffusion drift current and bottom channel band-to-band tunneling current, thus obtaining better ultra-steep switching characteristics.

Abstract: Embodiments of the present disclosure provide a page view generation method and apparatus, an electronic device, and a storage medium. The method includes: determining at least one work item and a page subview to be processed for the at least one work item; determining layout configuration information in the page subview to be processed, to obtain a page subview to be generated; determining a target page subview based on field configuration information corresponding to the page subview to be generated; and determining a target page view based on at least one target page subview.

Abstract: A semiconductor device and a method for manufacturing the same. The semiconductor device comprises an n-channel GAA transistor and a p-channel GAA transistor, which are spaced apart. Each of the n-channel GAA transistor and the p-channel GAA transistor comprises a source, a drain, and at least one nanostructure layer located between the source and the drain. The p-channel GAA transistor further comprises a gate stack structure and a gate sidewall. In the p-channel GAA transistor, the at least one nanostructure layer comprises a channel portion that is covered by the gate stack structure and a connecting portion that is covered by the gate sidewall, and germanium content in the channel portion is greater than germanium content in the connecting portion and is greater than germanium content in the at least one nanostructure layer of the n-channel GAA transistor.

Abstract: A transistor and a manufacturing method. The transistor includes a semiconductor base substrate, an active structure, a dielectric structure, and a gate stack structure. The active structure is formed on the semiconductor base substrate. The active structure includes a source region, a drain region, and a channel region located between the source region and the drain region. The channel region includes at least two nanostructures stacked in a thickness direction of the semiconductor base substrate. In the channel region, a bottom nanostructure has a greater width than other nanostructures. The dielectric structure is formed between the semiconductor base substrate and the active structure. The dielectric structure is in contact with the bottom nanostructure. The gate stack structure is formed on a surface of the bottom nanostructure not in contact with the dielectric structure, and the gate stack surrounds a periphery of the other nanostructures.

Abstract: A gate-all-around transistor with hybrid conduction mechanism, including a GAA MOSFET, a second source region, and a second drain region. The GAA MOSFET includes a substrate, a first source region, and a first drain region. The first source region, the first drain region and the second drain region are doped with first ions, the second source region is doped with second ions. The second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region. The height of the second source region and the second drain region are not less than the height of the substrate between the first source region and the first drain region. It can realize the hybrid conduction of the gate channel diffusion drift current and the bottom channel band tunneling current to obtain better ultra-steep switching characteristics.

Abstract: A gate-all-around transistor and a method for manufacturing the same. The gate-all-around transistor comprises: a semiconductor substrate; an active structure disposed on the semiconductor substrate, where the active structure comprises a source, a drain, and a channel between the source and the drain; a doped epitaxial structure, where a portion of the semiconductor substrate beneath the channel is recessed to form a first groove, the first groove is fully filled with the doped epitaxial structure, and primary carriers of the doped epitaxial structure are opposite in polarity to primary carriers of the source and the drain; and a gate stack structure surrounding the channel, where a portion of the gate stack structure beneath the channel is disposed between the doped epitaxial structure and the channel.

Abstract: The present invention provides a liquid crystal composition and a liquid crystal display device thereof. The liquid crystal composition comprises at least one compound of general formula I and at least one compound of general formula II. The liquid crystal composition has a larger vertical dielectric constant (??), a larger ratio of the vertical dielectric constant to the absolute value of dielectric anisotropy (??/|??|), a larger Kave value and a higher transmittance while maintaining an appropriate clearing point, an appropriate optical anisotropy, and an appropriate absolute value of the dielectric anisotropy, such that the liquid crystal display device comprising the same has a better contrast, a faster response speed and a better transmittance while maintaining an appropriate range of operating temperature and an appropriate threshold voltage.

Abstract: A pool cleaning system is provided. The system comprises a video capture device, a pool cleaning robot separated from the video capture device, and a computing device. The video capture device can transmit one or more videos of a pool to the computing device. The computing device can determine a position of the pool cleaning robot relative to the pool using the one or more videos. The computing device can generate a moving instruction for the pool cleaning robot, based on the position of the pool cleaning robot.

Abstract: Provided are a quinazoline compound and an application thereof. Specifically provided is a quinazoline compound as shown in formula I. The compound is novel in structure and has a good inhibitory effect on cell factors TNF-?, IL-6, and IL-I?.

Abstract: A gate-all-around transistor is provided, including: a semiconductor substrate, a nanostructure, a gate stack structure and a gate length defining structure. In a length direction of the nanostructure, each layer of nanostructure includes a source region, a drain region, and a channel region between the two. Materials of the source region and drain region include a first metal semiconductor compound. The gate stack structure surrounds the channel region. In a length direction of the gate stack structure, a sidewall of the gate stack structure is recessed relative to a sidewall of the channel region to form a recess, and the gate length defining structure is filled in the recess. The gate length defining structure is made of a second metal semiconductor compound, and a semiconductor material for making the second metal semiconductor compound is different from that for making the first metal semiconductor compound.

Abstract: An energy storage thermal management system, comprising a refrigeration module and a cooling module, wherein the refrigeration module comprises an air-floating centrifugal compressor and a condenser. Wherein the air-floating centrifugal compressor is used for compressing a refrigerant to form a refrigerant in a first state, and an inlet of the condenser is connected to an exhaust port of the air-floating centrifugal compressor to cool down the refrigerant in the first state to form a refrigerant in a second state, and the temperature of the second state is lower than that of the first state but the pressure is the same. The cooling module is used for heat dissipation of the target equipment, and its inlet is connected with the outlet of the condenser, and its outlet is connected with the air inlet of the air-floating centrifugal compressor, and the inlet is arranged with a throttling element.

Abstract: The present application relates to a multi fluid path selector valve, including a valve body, and several fluid outlet pipes. The valve body is provided with several layers of branch channels therein, the branch channel includes a fluid inlet hole and several branch holes. The valve body is provided with communication holes therein for one-to-one communicating the branch holes with the fluid outlet pipes. The valve body is provided with a control mechanism to control the on or off state between the branch hole and communication hole, and the valve body is provided with fluid inlet pipes in communication with the fluid inlet holes respectively.

Abstract: The embodiments of the present disclosure provide a method for dose verification. The method may include obtaining a predicted radiation auxiliary image of a target object at a target radiation time point; determining a target dose strategy based on the predicted radiation auxiliary image; performing, based on the target dose strategy, treatment in a current radiation fraction on the target object.

Abstract: The present disclosure discloses an information sending method, electronic device and non-transitory computer-readable storage medium. The information sending method includes: sending a live video stream to a first set of clients; receiving first information sent from the first set of clients; recording a timestamp of the first information; sending the first information to the first set of clients; generating a recorded video stream of the live video stream, in response to completion of the sending of the live video stream; synchronizing the timestamp of the first information with the recorded video stream to obtain a playback timeline of the first information; sending the recorded video stream to the second set of clients, and sending the first information according to the play timeline of the first information; receiving second information sent from the second set of clients; and sending the second information to the second set of clients.