Abstract: A method and an apparatus for processing Bitmap data are provided by the embodiments of the present disclosure. The method for processing Bitmap data includes: dividing a Bitmap region in a disk into a plurality of partitions in advance and setting an update region in the disk; obtaining a respective amount of dirty data corresponding to each of the plurality of partitions in memory in response to a condition for writing back to the disk being satisfied; finding multiple second partitions with an amount of dirty data satisfying to be merged into the update region from the plurality of partitions according to the respective amount of dirty data corresponding to each of the plurality of partitions; and recording dirty data corresponding to the multiple second partitions in the memory into the update region in the disk through one or more I/O operations after merging.

Abstract: A light-emitting substrate and a display device are disclosed, the light-emitting substrate includes: a base substrate including a light-emitting region; a plurality of first pads on a side of the base substrate and in the light-emitting region, where a material of the first pads includes Cu; and an oxidation protection layer on a side of the first pads away from the base substrate, where the plurality of first pads is used for bonding connection with a plurality of light-emitting units through the oxidation protection layer, a material of the oxidation protection layer includes CuNiX, and X includes one or any combination of Al, Sn, Pb, Au, Ag, In, Zn, Bi, Mg, Ga, V, W, Y, Zr, Mo, Nb, Pt, Co or Sb.

Abstract: A needle aid device comprises an outer shell; an inner shell located in the outer shell and comprising an upper portion and a lower portion, a trigger shell passage penetrating through the upper portion and the lower portion being formed in the inner shell, and an inner diameter of the lower portion being greater than that of the upper portion; and a trigger module capable of moving in the trigger shell passage and used for clamping or releasing an emitter mechanism; wherein, in an initial state, the trigger module is locked on the upper portion; and when unlocked, the trigger module drives the emitter mechanism to move downward until the emitter mechanism is separated from the trigger module.

Abstract: A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

Abstract: Disclosed are a light-emitting substrate and a display device. In the light-emitting substrate, a first pad of a light-emitting area includes a first metal layer located above a base substrate and a second metal layer located on a side, facing away from the base substrate, of the first metal layer. A material of the second metal layer includes copper-nickel-titanium alloy, and a quantity of nickel atoms and/or titanium atoms contained per unit area in a cross section, farther from the base substrate, of the second metal layer is greater than a quantity of nickel atoms and/or titanium atoms contained per unit area in another cross section, closer to the base substrate, of the second metal layer.

Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.

Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.

Abstract: A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.

Abstract: Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.

Abstract: Provided is a micro-nano fluidic substrate, a chip, a preparation method, and a system. The micro-nano fluidic substrate includes: a base; an electrode layer located on the base, the electrode layer includes a first electrode, a second electrode, and a control electrode; and a film layer located on the electrode layer and far away from the base, the film layer includes a groove layer, a nano-channel and a micro-channel, the groove layer includes a first groove, the nano-channel is located in the first groove, an orthographic projection of the nano-channel on the base at least partially coincides with an orthographic projection of the control electrode on the base, and the micro-channel is in communication with the nano-channel, the micro-channel includes a first micro-channel and a second micro-channel, and the first micro-channel is in communication with the first electrode, the second micro-channel is in communication with the second electrode.

Abstract: Embodiments of this application provide a database task processing method, a hot and cold data processing method, a storage engine, a device, and a storage medium. In the embodiments of this application, a database storage engine is integrated with a machine learning model, involved data samples and used resources in training of the machine learning model are dynamically adjusted by sensing a load pressure of the database storage engine, and through data collection at a storage engine level and a design of a lightweight model, online updating is performed on a model based on a background task. In this way, effectiveness and availability that the database storage engine is integrated with the machine learning model are ensured, and an accuracy rate and a recall rate of a task execution result are improved.

Abstract: A wiring board includes a base substrate and first connection pads disposed on the base substrate. The first connection pads each include electrical connection layer(s); each electrical connection layer includes a main material layer and protective layer(s) disposed on a side of the main material layer away from the base substrate; the protective layer(s) include a first reference protective layer, which is a protective layer farthest away from the base substrate in the protective layer(s); and a material of the main material layer includes copper. The electrical connection layer(s) includes a first electrical connection layer, which is an electrical connection layer farthest away from the base substrate in the electrical connection layer(s); and in protective layer(s) in the first electrical connection layer, at least a material of the first reference protective layer is capable of forming a first intermetallic compound with a first solder.

Abstract: The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.

Abstract: A wiring board includes a substrate, conductive pads and at least one protective layer group. The conductive pads are disposed on the substrate. The at least one protective layer group is disposed on a side of the conductive pads away from the substrate; a protective layer group includes an oxidation protective layer and a palladium alloy layer that are stacked, and the oxidation protective layer is closer to the substrate than the palladium alloy layer. A material of the oxidation protective layer includes a nickel-based alloy.

Abstract: Provided are a thin-film transistor and a manufacturing method thereof, and a display substrate, belonging to the technical field of thin-film transistors. The thin-film transistor includes: a base substrate; a gate electrode on the base substrate; an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate; and a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode.