Abstract: Provided herein are adenosine deaminases and variants thereof, nucleobase editors comprising deaminases, compositions comprising such editors, and methods of using such editors to generate modifications in target nucleobase sequences.

Abstract: An ethylene-copolymerized olefin copolymer having a high comonomer dispersion index, a preparation method therefor, an application thereof, and a composition comprising an ethylene-?-olefin copolymer are disclosed. The ethylene-?-olefin copolymer contains 70-95 mol % a structural unit derived from ethylene and 5-30 mol % a structural unit derived from ?-olefin. The ?-olefin is an olefin having 5-10 carbon atoms. The dispersion index RMD of the ?-olefin structural unit in the molecular chain is greater than 102%. The ethylene-?-olefin copolymer has a high comonomer dispersion index.

Abstract: A method and an apparatus for processing Bitmap data are provided by the embodiments of the present disclosure. The method for processing Bitmap data includes: dividing a Bitmap region in a disk into a plurality of partitions in advance and setting an update region in the disk; obtaining a respective amount of dirty data corresponding to each of the plurality of partitions in memory in response to a condition for writing back to the disk being satisfied; finding multiple second partitions with an amount of dirty data satisfying to be merged into the update region from the plurality of partitions according to the respective amount of dirty data corresponding to each of the plurality of partitions; and recording dirty data corresponding to the multiple second partitions in the memory into the update region in the disk through one or more I/O operations after merging.

Abstract: A light-emitting substrate and a display device are disclosed, the light-emitting substrate includes: a base substrate including a light-emitting region; a plurality of first pads on a side of the base substrate and in the light-emitting region, where a material of the first pads includes Cu; and an oxidation protection layer on a side of the first pads away from the base substrate, where the plurality of first pads is used for bonding connection with a plurality of light-emitting units through the oxidation protection layer, a material of the oxidation protection layer includes CuNiX, and X includes one or any combination of Al, Sn, Pb, Au, Ag, In, Zn, Bi, Mg, Ga, V, W, Y, Zr, Mo, Nb, Pt, Co or Sb.

Abstract: A needle aid device comprises an outer shell; an inner shell located in the outer shell and comprising an upper portion and a lower portion, a trigger shell passage penetrating through the upper portion and the lower portion being formed in the inner shell, and an inner diameter of the lower portion being greater than that of the upper portion; and a trigger module capable of moving in the trigger shell passage and used for clamping or releasing an emitter mechanism; wherein, in an initial state, the trigger module is locked on the upper portion; and when unlocked, the trigger module drives the emitter mechanism to move downward until the emitter mechanism is separated from the trigger module.

Abstract: A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.

Abstract: The present invention belongs to the technical field of characterization of target analyte properties, and particularly provides a mutant of a porin monomer, a protein pore comprising same, and use thereof in the detection of a target analyte, wherein an amino acid of the mutant of the porin monomer comprises a sequence set forth in SEQ ID NO: 1 or a sequence having at least 99%, 98%, 97%, 96%, 95%, 90%, 80%, 70%, 60%, or 50% identity thereto, and the amino acid of the mutant of the porin monomer comprises mutations at one or more positions corresponding to T71, S75, or F76 of SEQ ID NO: 1.

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. The present disclosure provides a node, user equipment in a wireless communication system and a method performed by the same. A method performed by a user equipment (UE) in a wireless communication system, the method comprising: receiving, from a base station, first information configuring a sounding reference signal (SRS) for positioning, wherein the first information includes information on a plurality of component carriers (CCs) which are linked for bandwidth aggregation associated with the SRS for positioning; and transmitting, to the base station, the SRS for positioning across all of the plurality of CCs.

Abstract: Provided is an audio synthesis method. Music score data of target music is acquired, wherein the music score data includes audio data identifiers and performance time information corresponding to a plurality of sub-audios, an instrumental timbre corresponding to each of the sub-audios being matched with a hearing-impaired hearing timbre; the sub-audios based on the audio data identifiers corresponding to each of the sub-audios is acquired; and a synthetic audio of the target music is generated by performing a fusion process on the sub-audios based on the performance time information corresponding to each of the sub-audios.

Abstract: The disclosure relates to a fifth generation (5G) or sixth generation (6G) communication system for supporting a higher data transmission rate. A method performed by user equipment (UE) in a communication system is provided. The method includes receiving first configuration information related to positioning signal, determining a first frequency band and a second frequency band based on the first configuration information, determining resource configuration information of a third frequency band based on the first frequency band and the second frequency band, and transmitting and/or receiving the positioning signal based on the resource configuration information of the third frequency band.

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

Abstract: Disclosed are a light-emitting substrate and a display device. In the light-emitting substrate, a first pad of a light-emitting area includes a first metal layer located above a base substrate and a second metal layer located on a side, facing away from the base substrate, of the first metal layer. A material of the second metal layer includes copper-nickel-titanium alloy, and a quantity of nickel atoms and/or titanium atoms contained per unit area in a cross section, farther from the base substrate, of the second metal layer is greater than a quantity of nickel atoms and/or titanium atoms contained per unit area in another cross section, closer to the base substrate, of the second metal layer.

Abstract: The present invention relates to a relay protective device, a construction machine, a relay protection control method and apparatus, and a computer readable storage medium.

Abstract: The present disclosure provides a lidar system. The lidar system includes: an optical rotating mirror and at least two laser transceiving modules. Each laser transceiving module includes a transmitting unit and a receiving unit. The transmitting unit is configured to transmit a laser signal. The optical rotating mirror is configured to rotate around a rotating axis in a vertical direction, receive the laser signal and adjust a direction of the laser signal during rotation, and reflect the laser signal to a target object. The laser signal is diffusely reflected on the target object, which produces an echo signal. The echo signal is reflected by the optical rotating mirror and is then received by the receiving unit. The receiving unit includes a plurality of detectors arranged in an array.

Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.

Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.

Abstract: A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.