Abstract: A memory access technology and a computer system, where the computer system includes a memory controller and a medium controller connected to the memory controller. In the computer system, when detecting that an error occurs in first data that is returned by the medium controller in response to a first send command, the memory controller determines sequence information of the first send command in a plurality of send commands that have been sent by the memory controller within a time period from a time point at which the first send command is sent to a current time, and sends a data retransmission command to the medium controller to instruct the medium controller to resend the first data based on the sequence information.

Abstract: Methods, systems, and media for determining perceptual quality indicators of video content items are provided.

Abstract: A low-carbon martensitic high hole expansion steel with a tensile strength above 980 MPa, and a manufacturing method therefor, the weight percentage of the chemical components thereof being: C 0.03-0.10%, Si 0.5-2.0%, Mn 1.0-2.0%, P?0.02%, S?0.003%, Al 0.02-0.08%, N?0.004%, Mo 0.1-0.5%, Ti 0.01-0.05%, and O?0.0030%, and the remainder being Fe and other inevitable impurities. The high hole expansion steel of the present invention has a yield strength of ?800 MPa and tensile strength of ?980 MPa, a lateral extension rate A50?8%, and a hole expansion ratio of ?30%, passes cold bending performance tests (d?4a, 180°), and can be used for passenger car chassis parts that require high strength and thinning such as control arms and sub-frames.

Abstract: Semiconductor devices and methods of manufacture are presented which form metallization layers over a semiconductor substrate; form a first pad over the metallization layers; deposit one or more passivation layers over the first pad; and form a first bond pad via through the one or more passivation layers and at least partially through the first pad.

Abstract: Disclosed are a 980 MPa-grade bainite high hole expansion steel and a manufacturing method therefor. The steel contains the following chemical components in percentages by weight: 0.05-0.10% of C, 0.5-2.0% of Si, 1.0-2.0% of Mn, P?0.02%, S?0.003%, 0.02-0.08% of Al, N?0.004%, Mo?0.1%, 0.01-0.05% of Ti, Cr?0.5%, B?0.002%, O?0.0030%, and the balance of Fe and other inevitable impurities. The high hole expansion steel of the present invention has a yield strength of ?800 MPa and a tensile strength of ?980 MPa, has a good elongation rate (the transverse A50 being ?11%) and hole expansion performance (the hole expansion ratio being ?40%), and can be applied to a position on a chassis part of a passenger car, such as a control arm and a vice frame, where high strength and thinning are required.

Abstract: A method for production of vanadium catalysts, including steps of 1) providing a mixture comprising a TiO2-based support and a composite oxide containing vanadium and antimony; 2) preparing a slurry containing the mixture obtained from step 1), and additive comprising at least one species selected from the group consisting of Si, Al, Zr, Ti, W and Mo, and a solvent; and 3) applying the slurry onto a substrate or processing the slurry into shaped bodies. The vanadium catalysts obtained/obtainable from the method, and use thereof for abatement of nitrogen oxides (NOx).

Abstract: Disclosed are an electric bicycle parking pile and a parking lock structure thereof, including a mounting base, a movable rod and at least one lock rod extending outward along the width of the mounting base. The mounting base includes a first base plate and two first side plates extending upward from two opposite sides of the first base plate. The middle of each first side plate includes a chute extending along the height. A first reset spring on the outer surfaces of the first guide post and the second guide post can enlarge the adjustment range of the lock rod and the application range of the parking lock, and make the lock rod automatically return to the initial position. The lock lever includes a locking groove. There is a preset angle of inclination between the axis of the lock lever and the first base plate.

Abstract: A 980 MPa-grade ultra-low-carbon martensite and retained austenite ultra-high hole expansion steel and a manufacturing method therefor. The hole expansion steel comprises the following chemical components in percentage by weight: C 0.03%-0.06%, Si 0.8%-2.0%, Mn 1.0%-2.0%, P?0.02%, S?0.003%, Al 0.02%-0.08%, N?0.004%, Mo 0.1%-0.5%, Ti 0.01%-0.05%, and O?0.0030%. The high hole expansion steel of the present invention has the yield strength ?800 MPa, the tensile strength ?980 MPa, the elongation rate (horizontal A50?10%), the cold bending property (d?4a, 180°), and the hole expansion ratio ?80%, and can be applied to a chassis part of a passenger vehicle such as a control arm, an auxiliary frame and other parts that require high-strength thinning.

Abstract: Disclosed are a steel plate for a torsion beam and a manufacturing method therefor, and a torsion beam and a manufacturing method therefor. The steel plate for the torsion beam has the following chemical components in percentages by mass: 0.04-0.085% of C, 0.02-0.5% of Si, 1.3-1.8% of Mn, 0.15-0.5% of Cr, 0.12-0.30% of Mo, 0.058% or less of Nb, 0.15% or less of V, 0.02% or less of Ti, 0.02-0.1% of Al, 0.02% or less of P, 0.005% or less of S, 0.005% or less of N, and the balance being Fe and inevitable impurities. The steel plate has one or two of Nb and V, and the amount of Nb and V satisfies 0.096%<2Nb+V<0.17%. The steel plate for the torsion beam of the present invention has an excellent elongation and excellent cold bending properties while ensuring high strength, and meets the requirement for producing lightweight torsion beams.

Abstract: A rotation shaft assembly includes a pivot assembly including a common rotation shaft, and a lock member, a first connection member, a second connection member, and a third connection member disposed at the common rotation shaft. The first connection member, the second connection member, and the third connection member are configured to be connected to a first member, a second member, and a third member, respectively. The lock member has a locked state that enables the first connection member and the second connection member to rotate synchronously, and an unlocked state that enables the first connection member and the second connection member to rotate independently with respect to each other.

Abstract: An agent module of a host directs I/O requests accessing a first disk of a first storage array to access a second disk of a second storage array. The agent module obtains a disk identifier of a first disk in the first storage array and a disk identifier of a second disk in the second storage array to record a mapping relationship between them. The agent module further reports virtual path information for a virtual path between the agent module and a multipath module of the host to the multipath module. The agent module sends the disk identifier of the first disk via the virtual path after receiving a disk identifier query request for querying the identifier of the second disk. Thus, the agent module can send an I/O request for accessing the first disk to the second storage array to access the second disk.

Abstract: A method of fabricating a semiconductor chip includes the following steps. A bonding material layer is formed on a first wafer substrate and is patterned to form a first bonding layer having a strength adjustment pattern. A semiconductor component layer and a first interconnect structure layer are formed on a second wafer substrate. The first interconnect structure layer is located. A second bonding layer is formed on the first interconnect structure layer. The second wafer substrate is bonded to the first wafer substrate by contacting the second bonding layer with the first bonding layer. A bonding interface of the second bonding layer and the first bonding layer is smaller than an area of the second bonding layer. A second interconnect structure layer is formed on the semiconductor component layer. A conductor terminal is formed on the second interconnect structure layer.

Abstract: A rapid DLP 3D printing control parameter optimization method combining continuous and layered molding includes the following steps: confirming the maximum printable distance of each slice by analyzing the printable area of the model slice. The liquid-liquid interface printing scene was further established, and the flow behavior of the resin between the printed object and the fluorinated oil after printing a layer of slices was simulated and recorded. Next, determine the printing mode of the current slice by slicing the maximum printable distance and numerical simulation model. Then, based on Poiseuille flow, Jacobs working curve and Lambert-Beer law, the resin curing time of continuous and layered printing, the maximum filling distance of continuous printing, the best lifting distance of layered printing, and the corresponding printing platform lifting of the two methods are expressed speed. Finally, camera monitoring is used to determine the print origin before printing starts.

Abstract: An ophthalmic device which is a polymerization product of a monomeric mixture includes (a) one or more cationic initiators comprising one or more polymerizable groups; and (b) one or more alkyl-substituted oxazolines.

Abstract: Systems and methods of the present disclosure are directed to a method for generating a machine-learned multitask model configured to perform tasks. The method can include obtaining a machine-learned multitask search model comprising candidate nodes. The method can include obtaining tasks and machine-learned task controller models associated with the tasks. As an example, for a task, the method can include using the task controller model to route a subset of the candidate nodes in a machine-learned task submodel for the corresponding task. The method can include inputting task input data to the task submodel to obtain a task output. The method can include generating, using the task output, a feedback value based on an objective function. The method can include adjusting parameters of the task controller model based on the feedback value.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an interconnect structure disposed over a semiconductor substrate, contact pads disposed on the interconnect structure, a dielectric structure disposed on the interconnect structure and covering the contact pads, bonding connectors covered by the dielectric structure and landing on the contact pads, and a dummy feature covered by the dielectric structure and laterally interposed between adjacent two of the bonding connectors. Top surfaces of the bonding connectors are substantially coplanar with a top surface of the dielectric structure, and the bonding connectors are electrically coupled to the interconnect structure through the contact pads.

Abstract: A semiconductor package and a manufacturing method are provided. The manufacturing method includes: forming a through via structure and a dipole structure over a carrier, wherein the through via structure and the dipole structure respectively include an insulating core and a conductive layer covering the insulating core; attaching a semiconductor die onto the carrier, wherein the through via structure and the dipole structure are located aside the semiconductor die; laterally encapsulating the though via structure, the dipole structure and the semiconductor die with an encapsulant; and removing the carrier.

Abstract: A device includes a first side interconnect structure over a first side of a substrate, wherein active circuits are in the substrate and adjacent to the first side of the substrate, a dielectric layer over a second side of the substrate, a pad embedded in the dielectric layer, the pad comprising an upper portion and a bottom portion formed of two different materials and a passivation layer over the dielectric layer.

Abstract: A semiconductor package including an improved isolation bonding film and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first die bonded to a package substrate, the first die including vias extending through a substrate, the vias extending above a top surface of the substrate; a first dielectric film extending along a top surface of the package substrate, along the top surface of the substrate, and along sidewalls of the first die, the vias extending through the first dielectric film; a second die bonded to the first dielectric film and the vias; and an encapsulant over the package substrate, the first die, the first dielectric film, and the second die.

Abstract: Systems and methods of setting up an E1 interface for a gNB are described, A transmitting entity of the gNB-CU-CP and gNB-CU-UP initiates the first TNL association between the gNB-CU-CP and gNB-CU-UP, and is also limited to initiating the E1 Setup procedure. The transmitting entity sends an E1 SETUP REQUEST message to set up the E1 interface. Afterwards, a message is received from the receiving entity. The transmitting entity determines that the setup of the E1 interface is successful if the message contains IEs of an E1 SETUP RESPONSE message. The types of IEs include a message type IE and a name of the transmitting entity.