Abstract: A first connector, a second connector and an electrical connector assembly having the first connector and the second connector are provided. The first connector includes an insulating housing and a locking plate embedded in the insulating housing, and a plurality of first power terminals, a plurality of first signal terminals and a plurality of first braking terminals mounted in the insulating housing; the locking plate is provided with a locking mechanism protruding upwardly. The second connector includes a terminal block, a cover body covering the terminal block, a locking slidable cover slidably mounted on the cover body and a plurality of second power terminals, a plurality of second signal terminals and a plurality of second braking terminals mounted in the terminal block. The locking slidable cover is capable of sliding forwardly and rearwardly relative to the cover body, and is capable of being locked together with the locking mechanism.

Abstract: A semiconductor device with densified dielectric structures and a method of fabricating the same are disclosed. The method includes forming a fin structure, forming an isolation structure adjacent to the fin structure, forming a source/drain (S/D) region on the fin structure, depositing a flowable dielectric layer on the isolation structure, converting the flowable dielectric layer into a non-flowable dielectric layer, performing a densification process on the non-flowable dielectric layer, and repeating the depositing, converting, and performing to form a stack of densified dielectric layers surrounding the S/D region.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, first and second contact structures proximate to each other and over the substrate, and first and second dielectric layers formed over the first and second contact structures, respectively. A top portion of the first dielectric layer can include a first dielectric material. A bottom portion of the first dielectric layer can include a second dielectric material different from the first dielectric material. The second dielectric layer can include a third dielectric material different from the first dielectric material.

Abstract: A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The method includes forming first and second fin structures on a substrate, forming n- and p-type source/drain (S/D) regions on the first and second fin structures, respectively, forming first and second contact openings on the n- and p-type S/D regions, respectively, forming a carbon-based layer in the first and second contact openings, performing a remote plasma treatment with radicals on the carbon-based layer to form a remote plasma treated layer, selectively removing a portion of the remote plasma treated layer, forming a p-type work function metal (pWFM) silicide layer on the p-type S/D region, and forming an n-type work function metal (nWFM) silicide layer on the pWFM silicide layer and on the n-type S/D region.

Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.

Abstract: Air assemblies (1000,2000,3000,4000,5000) having an inflation, a deflation, and a closed state for use with inflatable products, such as air mattresses. Specifically, air assemblies (1000,2000,3000,4000,5000) can be changed manually by a user by operating a directional control valve (1033,2043,3033,4033,5001) to inflate, deflate, or close the inflatable product. The directional control valve (1033,2043,3033,4033,5001) may also activate a pump in the inflation and deflation states and deactivate the pump in the closed state.

Abstract: A method is provided for implanting a valve having at least one valve leaflet within the cardiovascular system of a subject. One step of the method includes preparing a substantially dehydrated bioprosthetic valve and then providing an expandable support member having oppositely disposed first and second ends and a main body portion extending between the ends. Next, the substantially dehydrated bioprosthetic valve is attached to the expandable support member so that the substantially dehydrated bioprosthetic valve is operably secured within the main body portion of the expandable support member. The expandable support member is then crimped into a compressed configuration and placed at a desired location within the cardiovascular system of the subject. Either before or after placement at the desired location, fluid or blood re-hydrates the substantially dehydrated bioprosthetic valve.

Abstract: There is provided an electronic device having Bluetooth communication function. The electronic device confirms whether the received signal power is larger than a power threshold within an interval of 72 microseconds every time an RF receiver is turned on in the receive slot so as to determine whether to continuously keep the RF receiver being turned on or to turn off the RF receiver to save power.

Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.

Abstract: Embodiments are generally directed to a system and method for adapting executable object to a processing unit. An embodiment of a method to adapt an executable object from a first processing unit to a second processing unit, comprises: adapting the executable object optimized for the first processing unit of a first architecture, to the second processing unit of a second architecture, wherein the second architecture is different from the first architecture, wherein the executable object is adapted to perform on the second processing unit based on a plurality of performance metrics collected while the executable object is performed on the first processing unit and the second processing unit.

Abstract: Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact structure.

Abstract: A method for performing region-of-interest (ROI)-based depth detection with aid of a pattern-adjustable projector and associated apparatus are provided.

Abstract: Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings.

Abstract: The cooling component may include a coolant pipeline component and a load-bearing component. The coolant pipeline component may include multiple flexible coolant pipelines with high thermal conductivity arranged side by side, the multiple coolant pipelines arranged side by side being securely arranged on the load-bearing component in such a way that a coolant liquid intake pipe and liquid output pipe are arranged uniformly in parallel in a serpentine layout without crossing over each other; so that the multiple coolant pipelines can be installed in a close fit with a Z coil of a gradient coil in such a way as to be orthogonal to the Z coil. Aspects of the present disclosure advantageously increase the support roundness of a cooling layer, and further ensure the magnetic field homogeneity of a coil supported thereby.

Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

Abstract: The disclosure relates to nanoparticle drug conjugates (NDC) that comprise ultrasmall nanoparticles, folate receptor (FR) targeting ligands, and linker-drug conjugates, and methods of making and using them to treat cancer.

Abstract: A power device includes: a semiconductor layer, a well region, a body region, a gate, a sub-gate, a source, a drain, and an electric field adjustment region. The sub-gate is formed above a top surface of the semiconductor layer, wherein a portion of the well region is located vertically beneath the sub-gate. The sub-gate is not directly connected to the gate. The electric field adjustment region has a conductivity type which is opposite to that of the well region. The electric field adjustment region is formed beneath and not in contact with the top surface of the semiconductor layer. The electric field adjustment region is located in the well region of the semiconductor layer, and at least a portion of the electric field adjustment region is located vertically beneath the sub-gate.

Abstract: There is provided an electronic device having Bluetooth communication function. The electronic device confirms whether the received signal power is larger than a power threshold within an interval of 72 microseconds every time an RF receiver is turned on in the receive slot so as to determine whether to continuously keep the RF receiver being turned on or to turn off the RF receiver to save power.