Patents by Inventor Feng-Cheng Hsu

Feng-Cheng Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10714463
    Abstract: A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.
    Type: Grant
    Filed: November 24, 2019
    Date of Patent: July 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Yao Lin, Cheng-Yi Hong, Feng-Cheng Hsu, Shuo-Mao Chen, Shin-Puu Jeng, Shu-Shen Yeh, Kuang-Chun Lee
  • Patent number: 10707142
    Abstract: A semiconductor package including at least one integrated circuit component and a glue material is provided. The at least one integrated circuit component has a top surface with conductive terminals and a backside surface opposite to the top surface. The glue material encapsulates the at least one integrated circuit component, wherein a first lateral thickness of the glue material is smaller than a second lateral thickness of the glue material, the second lateral thickness is parallel to the first lateral thickness, and the first lateral thickness is substantially coplanar with the top surface.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: July 7, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Feng-Cheng Hsu, Shin-Puu Jeng
  • Patent number: 10692813
    Abstract: A semiconductor device including an integrated circuit, a dielectric layer, a plurality of connecting terminals and at least one dummy conductor is provided. The integrated circuit has a plurality of connecting pads, and the dielectric layer is disposed thereon and partially exposes the plurality of the connecting pads by a plurality of openings defined therein. The plurality of the connecting terminals is disposed on the plurality of the connecting pads exposed by the plurality of the openings. The at least one dummy conductor is disposed on the dielectric layer and electrically isolated from the integrated circuit. A substantial topology variation is between the plurality of the connecting terminals and the at least one dummy conductor. A semiconductor package having the semiconductor device is also provided.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: June 23, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Feng-Cheng Hsu, Shin-Puu Jeng
  • Patent number: 10665473
    Abstract: A package structure including a semiconductor die, a redistribution layer and a plurality of conductive elements is provided. At least one joint of the joints in the redistribution layer or on the semiconductor die is connected with the conductive element for electrically connecting the redistribution layer, the semiconductor die and the conductive elements.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: May 26, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Hsiang Lin, Feng-Cheng Hsu, Shuo-Mao Chen, Shin-Puu Jeng, Arunima Banerjee
  • Publication number: 20200161267
    Abstract: A chip package structure is provided. The chip package structure includes a first redistribution structure including a dielectric structure and wiring layers in the dielectric structure. The chip package structure includes a first chip over the first surface. The chip package structure includes a first conductive pillar over the first surface and electrically connected to the wiring layers. The chip package structure includes a second chip over the second surface. The second chip includes a second substrate and a second conductive pad over the second substrate, and the second conductive pad is between the second substrate and the first redistribution structure. The chip package structure includes a second conductive pillar over the second surface and electrically connected to the wiring layers.
    Type: Application
    Filed: January 23, 2020
    Publication date: May 21, 2020
    Inventors: Shin-Puu JENG, Shuo-Mao CHEN, Feng-Cheng HSU
  • Publication number: 20200152603
    Abstract: A semiconductor package structure includes a redistribution (RDL) layer, a first chip, at least one second chip, an encapsulant and a third chip. The redistribution layer has a first surface and a second surface opposite to each other. The first chip is over the first surface of the redistribution layer and electrically connected to the redistribution layer. The second chip is over the first surface of the redistribution layer. The second chip includes a plurality of through via structures. The encapsulant is over the first surface of the distribution layer, wherein the encapsulant surrounds the first chip and the second chip. The third chip is over the encapsulant and electrically connected to the first chip through the through via structures of the second chip and the redistribution layer.
    Type: Application
    Filed: January 14, 2020
    Publication date: May 14, 2020
    Inventors: SHIN-PUU JENG, FENG-CHENG HSU, SHUO-MAO CHEN
  • Publication number: 20200152563
    Abstract: A semiconductor package device includes an interposer die having a semiconductor substrate and a plurality of through-silicon-vias (TSVs) extending through the semiconductor substrate. The semiconductor package device also includes a first semiconductor die spaced apart from the interposer die, a first redistribution layer disposed on a first side of the interposer die and electrically coupling the interposer die with the first semiconductor die, and a second redistribution layer on a second side of the interposer die opposite the first side. Each of the plurality of TSVs includes a sidewall tapering from a first end near the second redistribution layer to a second end near the first redistribution layer.
    Type: Application
    Filed: January 14, 2020
    Publication date: May 14, 2020
    Inventors: SHUO-MAO CHEN, FENG-CHENG HSU, SHIN-PUU JENG
  • Publication number: 20200135694
    Abstract: A method includes forming a first plurality of redistribution lines, forming a first metal post over and electrically connected to the first plurality of redistribution lines, and bonding a first device die to the first plurality of redistribution lines. The first metal post and the first device die are encapsulated in a first encapsulating material. The first encapsulating material is then planarized. The method further includes forming a second metal post over and electrically connected to the first metal post, attaching a second device die to the first encapsulating material through an adhesive film, encapsulating the second metal post and the second device die in a second encapsulating material, planarizing the second encapsulating material, and forming a second plurality of redistributions over and electrically coupling to the second metal post and the second device die.
    Type: Application
    Filed: December 20, 2019
    Publication date: April 30, 2020
    Inventors: Jui-Pin Hung, Feng-Cheng Hsu, Shin-Puu Jeng
  • Patent number: 10636747
    Abstract: A semiconductor package structure includes a first redistribution layer, a second redistribution layer and an interconnecting structure. The first redistribution layer has a first surface and a second surface opposite to each other. The second redistribution layer is disposed over the first surface of the first redistribution layer, wherein the second redistribution layer has a third surface and a fourth surface opposite to each other, and the third surface facing the first surface. The interconnecting structure is disposed between and electrically connected to the first redistribution layer and the second redistribution layer, wherein the interconnecting structure comprises a conductive post and a conductive bump stacked to each other.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: April 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Jui-Pin Hung, Feng-Cheng Hsu, Shuo-Mao Chen, Shin-Puu Jeng, De-Dui Marvin Liao
  • Publication number: 20200126812
    Abstract: A chip package is provided. The chip package includes a redistribution structure including an insulating layer and a wiring layer. The wiring layer is in the insulating layer. The chip package includes a chip over the redistribution structure and electrically connected to the wiring layer. The chip package includes an interposer substrate over the redistribution structure and the chip, wherein a portion of the chip is in the interposer substrate. The chip package includes a conductive structure between the interposer substrate and the redistribution structure and electrically connected to the wiring layer. The conductive structure includes a conductive bump or a conductive pillar. The chip package includes a molding layer surrounding the interposer substrate and the conductive structure. The molding layer is partially between the interposer substrate and the redistribution structure and partially between the interposer substrate and the chip.
    Type: Application
    Filed: December 17, 2019
    Publication date: April 23, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shin-Puu JENG, Po-Hao TSAI, Po-Yao CHUANG, Feng-Cheng HSU, Shuo-Mao CHEN, Techi WONG
  • Patent number: 10622336
    Abstract: The present disclosure provides a method for manufacturing a semiconductor package. The method includes providing a carrier, forming a semiconductor die layer over the carrier, and exposing the conductive contact from a close end of the insulating layer by an etching operation. Forming the semiconductor die layer includes forming an insulating layer over the carrier, forming a trench having a close end and an open end in the insulating layer, forming a conductive contact in the trench, and placing a semiconductor die over the insulating layer.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: April 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Feng-Cheng Hsu, Jui-Pin Hung, Shin-Puu Jeng
  • Publication number: 20200098739
    Abstract: A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.
    Type: Application
    Filed: November 24, 2019
    Publication date: March 26, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Yao Lin, Cheng-Yi Hong, Feng-Cheng Hsu, Shuo-Mao Chen, Shin-Puu Jeng, Shu-Shen Yeh, Kuang-Chun Lee
  • Publication number: 20200091029
    Abstract: A package structure and method for forming the same are provided. The package structure includes a semiconductor die formed over a first side of an interconnect structure, and the semiconductor die has a first height. The package structure also includes a first stacked die package structure formed over the first side of the interconnect structure, and the first stacked die package structure has a second height. The second height is greater than the first height. The package structure includes a lid structure formed over the semiconductor die and the first stacked die package structure. The lid includes a main portion and a protruding portion extending from the main portion, and the protruding portion is directly over the semiconductor die.
    Type: Application
    Filed: November 7, 2018
    Publication date: March 19, 2020
    Inventors: Shin-Puu JENG, Po-Yao LIN, Feng-Cheng HSU, Shuo-Mao CHEN, Chin-Hua WANG
  • Publication number: 20200090955
    Abstract: An embodiment device package includes a first die, a second die, and a molding compound extending along sidewalls of the first die and the second die. The package further includes redistribution layers (RDLs) extending laterally past edges of the first die and the second die. The RDLs include an input/output (I/O) contact electrically connected to the first die and the second die, and the I/O contact is exposed at a sidewall of the device package substantially perpendicular to a surface of the molding compound opposite the RDLs.
    Type: Application
    Filed: November 21, 2019
    Publication date: March 19, 2020
    Inventors: Feng-Cheng Hsu, Shuo-Mao Chen, Jui-Pin Hung, Shin-Puu Jeng
  • Publication number: 20200075569
    Abstract: A package structure and method for forming the same are provided. The package structure includes a first redistribution structure formed over a substrate, and the first redistribution structure includes a first conductive line, a second conductive line and a first overlapping conductive line between the first conductive line and the second conductive line. The first conductive line has a first width, the second conductive line which is parallel to the first conductive line has a second width, and the overlapping conductive line has a third width which is greater than the first width and the second width. The package structure includes a first package unit formed over the first redistribution structure, and the first package unit includes a first semiconductor die and a first die stack, and the first semiconductor die has a different function than the first die stack.
    Type: Application
    Filed: December 27, 2018
    Publication date: March 5, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shin-Puu JENG, Po-Yao LIN, Shuo-Mao CHEN, Feng-Cheng HSU, Chia-Hsiang LIN
  • Publication number: 20200058571
    Abstract: A semiconductor package is provided. The semiconductor package includes a package substrate. The semiconductor package further includes a first chip and a second chip mounted on the package substrate. The thickness of the first chip is different from that of the second chip. In addition, the semiconductor package includes a heat spreader attached on top of the first chip and top of the second chip. A first portion of the heat spreader over the first chip and a second portion of the heat spreader over the second chip have the same thickness.
    Type: Application
    Filed: February 14, 2019
    Publication date: February 20, 2020
    Inventors: Chin-Hua WANG, Po-Yao LIN, Feng-Cheng HSU, Shin-Puu JENG, Wen-Yi LIN, Shu-Shen YEH
  • Publication number: 20200043900
    Abstract: The present disclosure provides a method for manufacturing a semiconductor package, including providing a carrier, forming an insulating layer over the carrier, forming a first semiconductor die layer over the insulating layer, debonding the carrier from the insulating layer, and exposing the conductive contact from the insulating layer by an etching operation. Forming the first semiconductor die layer over the insulating layer includes forming a shallow trench in the insulating layer, forming a conductive contact in the shallow trench, and placing a first semiconductor die over the insulating layer.
    Type: Application
    Filed: October 9, 2019
    Publication date: February 6, 2020
    Inventors: FENG-CHENG HSU, JUI-PIN HUNG, SHIN-PUU JENG
  • Patent number: 10546830
    Abstract: A chip package structure is provided. The chip package structure includes a first redistribution structure including a dielectric structure and a plurality of wiring layers in the dielectric structure. The chip package structure includes a first chip over the first surface. The chip package structure includes a first conductive bump between the first chip and the first redistribution structure. The chip package structure includes a first conductive pillar over the first surface adjacent to the first chip and electrically connected to the wiring layers. The chip package structure includes a second chip over the second surface. The chip package structure includes a second conductive pillar over the second surface adjacent to the second chip and electrically connected to the wiring layers. The chip package structure includes a first molding layer over the first surface and surrounding the first chip, the first conductive bump, and the first conductive pillar.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: January 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Shin-Puu Jeng, Shuo-Mao Chen, Feng-Cheng Hsu
  • Publication number: 20200027837
    Abstract: A method for forming a chip package structure is provided. The method includes forming a first redistribution structure over a first carrier substrate. The method includes bonding a chip structure to the first surface through a first conductive bump. The method includes forming a first molding layer over the first redistribution structure. The method includes removing the first carrier substrate. The method includes forming a second conductive bump over the second surface. The method includes forming a second redistribution structure over a second carrier substrate. The method includes bonding the first redistribution structure to the third surface. The method includes forming a second molding layer over the second redistribution structure. The method includes removing the second carrier substrate. The method includes removing a portion of the second redistribution structure from the fourth surface. The method includes forming a third conductive bump over the fourth surface.
    Type: Application
    Filed: May 8, 2019
    Publication date: January 23, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shin-Puu JENG, Shuo-Mao CHEN, Feng-Cheng HSU, Po-Yao LIN
  • Patent number: 10535632
    Abstract: A semiconductor package structure includes a redistribution (RDL) layer, a first chip, at least one second chip, an encapsulant and a third chip. The redistribution layer has a first surface and a second surface opposite to each other. The first chip is over the first surface of the redistribution layer and electrically connected to the redistribution layer. The second chip is over the first surface of the redistribution layer. The second chip includes a plurality of through via structures. The encapsulant is over the first surface of the distribution layer, wherein the encapsulant surrounds the first chip and the second chip. The third chip is over the encapsulant and electrically connected to the first chip through the through via structures of the second chip and the redistribution layer.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: January 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Shin-Puu Jeng, Feng-Cheng Hsu, Shuo-Mao Chen