Abstract: A semiconductor device package includes a redistribution structure, a first semiconductor device, a plurality of second semiconductor devices, at least one warpage adjusting component, and an encapsulating material. The first semiconductor device is disposed on the redistribution structure. The second semiconductor devices are disposed on the redistribution structure and surround the first semiconductor device. The at least one warpage adjusting component is disposed on at least one of the second semiconductor devices. The encapsulating material encapsulates the first semiconductor device, the second semiconductor devices and the warpage adjusting component, wherein a Young's modulus of the warpage adjusting component is greater than or equal to a Young's modulus of the encapsulating material, and a coefficient of thermal expansion (CTE) of the warpage adjusting component is smaller than a CTE of the encapsulating material.

Abstract: The present disclosure provides a method for manufacturing a semiconductor package. The method includes providing a carrier, forming a semiconductor die layer over the carrier, and exposing the conductive contact from a close end of the insulating layer by an etching operation. Forming the semiconductor die layer includes forming an insulating layer over the carrier, forming a trench having a close end and an open end in the insulating layer, forming a conductive contact in the trench, and placing a semiconductor die over the insulating layer.

Abstract: A method includes forming a redistribution structure over a carrier, the redistribution structure having conductive features on a surface of the redistribution structure distal the carrier; forming a conductive pillar over the surface of the redistribution structure; attaching a die to the surface of the redistribution structure adjacent to the conductive pillar, where die connectors of the die are electrically coupled to the conductive features of the redistribution structure; and attaching a pre-made substrate to the conductive pillar through a conductive joint, where the conductive joint is on the conductive pillar and comprises a different material from the conductive pillar, where the conductive joint and the conductive pillar electrically couple the redistribution structure to the pre-made substrate.

Abstract: A semiconductor device package includes a redistribution structure, a first semiconductor device, a plurality of second semiconductor devices, at least one warpage adjusting component, and an encapsulating material. The first semiconductor device is disposed on the redistribution structure. The second semiconductor devices are disposed on the redistribution structure and surround the first semiconductor device. The at least one warpage adjusting component is disposed on at least one of the second semiconductor devices. The encapsulating material encapsulates the first semiconductor device, the second semiconductor devices and the warpage adjusting component, wherein a Young's modulus of the warpage adjusting component is greater than or equal to a Young's modulus of the encapsulating material, and a coefficient of thermal expansion (CTE) of the warpage adjusting component is smaller than a CTE of the encapsulating material.

Abstract: A method for forming a chip package structure is provided. The method includes forming a first dielectric layer over a carrier substrate. The first dielectric layer is a continuous dielectric layer and has openings. The method includes forming a first wiring layer over the first dielectric layer and in the openings. The first dielectric layer and the first wiring layer together form a redistribution structure, and the redistribution structure has a first surface and a second surface. The method includes disposing a first chip and a first conductive bump over the first surface. The method includes forming a first molding layer over the first surface. The method includes removing the carrier substrate. The method includes disposing a second chip and a second conductive bump over the second surface. The method includes forming a second molding layer over the second surface.

Abstract: A semiconductor package including an insulating encapsulation, an integrated circuit component, and conductive elements is provided. The integrated circuit component is encapsulated in the insulating encapsulation, wherein the integrated circuit component has at least one through silicon via protruding from the integrated circuit component. The conductive elements are located on the insulating encapsulation, wherein one of the conductive elements is connected to the at least one through silicon via, and the integrated circuit component is electrically connected to the one of the conductive elements through the at least one through silicon via.

Abstract: A semiconductor package including at least one integrated circuit component, a glue material, an insulating encapsulation, and a redistribution circuit structure is provided. The glue material encapsulates the at least one integrated circuit component and has a first surface and a second surface opposite to the first surface, wherein the at least one integrated circuit component is exposed by the first surface of the glue material, and an area of the first surface is smaller than an area of the second surface. The insulating encapsulation encapsulates the glue material, wherein an interface is between the glue material and the insulating encapsulation. The redistribution circuit structure is disposed on the at last one integrated circuit component, the glue material and the insulating encapsulation, wherein the redistribution circuit structure is electrically connected to the at least one integrated circuit component.

Abstract: A method of manufacturing a structure includes: providing a substrate; forming an adhesive layer over the substrate; forming an interconnect layer comprising a metal line and a metal via over the adhesive layer; forming a plurality of conductive pads over the interconnect layer; forming conductive pillars over the interconnect layer; disposing a first semiconductor die over the conductive pads, the first semiconductor die being spaced apart from the conductive pillars; bonding a second semiconductor die with the conductive pillars; and removing the substrate and the adhesive layer to expose a conductive portion of the interconnect layer.

Abstract: A semiconductor package structure includes an encapsulant, a first chip, a second chip, a first redistribution layer and a second redistribution layer. The encapsulant has a first surface and a second surface opposite to each other. The first chip is in the encapsulant, wherein the first chip includes a plurality of contact pads exposed from the first surface of the encapsulant. The second chip is in the encapsulant, wherein second chip includes a plurality of contact pads exposed from the second surface of the encapsulant. The first redistribution layer is over the first surface of the encapsulant and electrically connected to the contact pads of the first chip. The second redistribution layer is over the second surface of the encapsulant and electrically connected to the contact pads of the second chip.

Abstract: The present disclosure provides a semiconductor package, including a first layer, a second layer, and a conductive array. The first layer includes a packaged die having a carrier surface and a molding surface, and a first die structure in proximity to the carrier surface. An active region of the first die structure is electrically coupled to the packaged die through a solder. The second layer includes a second die structure, the second die structure being connected to the active region of the first die structure by a first redistributed layer (RDL). The conductive array is connected to an active region of the second die structure by a second RDL. The present disclosure also provides a method for manufacturing the aforesaid semiconductor package.

Abstract: A semiconductor device includes a first substrate including a plurality of first pads disposed on a first surface of the first substrate, a second substrate including a plurality of second pads disposed on a second surface of the substrate, a plurality of conductive bumps bonded the plurality of first pads with the plurality of second pads correspondingly, a solder bracing material disposed on the first surface and surrounded the plurality of conductive bumps, an underfill material surrounded the plurality of conductive bumps and disposed between the solder bracing material and the second surface, and a rough interface between the solder bracing material and the underfill material. The rough interface includes a plurality of protruded portions and a plurality of recessed portions.

Abstract: A semiconductor package structure includes a first redistribution layer, a second redistribution layer and an interconnecting structure. The first redistribution layer has a first surface and a second surface opposite to each other. The second redistribution layer is disposed over the first surface of the first redistribution layer, wherein the second redistribution layer has a third surface and a fourth surface opposite to each other, and the third surface facing the first surface. The interconnecting structure is disposed between and electrically connected to the first redistribution layer and the second redistribution layer, wherein the interconnecting structure comprises a conductive post and a conductive bump stacked to each other.

Abstract: A package structure includes a first dielectric layer, a first semiconductor device, a first redistribution line, a second dielectric layer, a second semiconductor device, a second redistribution line, a first conductive feature, and a first molding material. The first semiconductor device is over the first dielectric layer. The first redistribution line is in the first dielectric layer and is electrically connected to the first semiconductor device. The second dielectric layer is over the first semiconductor device. The second semiconductor device is over the second dielectric layer. The second redistribution line is in the second dielectric layer and is electrically connected to the second semiconductor device. The first conductive feature electrically connects the first redistribution line and the second redistribution line. The first molding material molds the first semiconductor device and the first conductive feature.

Abstract: A bottom package includes a molding compound, a buffer layer over and contacting the molding compound, and a through-via penetrating through the molding compound. A device die is molded in the molding compound. A guiding trench extends from a top surface of the buffer layer into the butter layer, wherein the guiding trench is misaligned with the device die.

Abstract: A bottom package includes a molding compound, a buffer layer over and contacting the molding compound, and a through-via penetrating through the molding compound. A device die is molded in the molding compound. A guiding trench extends from a top surface of the buffer layer into the buffer layer, wherein the guiding trench is misaligned with the device die.

Abstract: A method of manufacturing a structure includes: providing a substrate; forming an adhesive layer over the substrate; forming an interconnect layer comprising a metal line and a metal via over the adhesive layer; forming a plurality of conductive pads over the interconnect layer; forming conductive pillars over the interconnect layer; disposing a first semiconductor die over the conductive pads, the first semiconductor die being spaced apart from the conductive pillars; bonding a second semiconductor die with the conductive pillars; and removing the substrate and the adhesive layer to expose a conductive portion of the interconnect layer.

Abstract: Methods of forming packages include forming an encapsulant laterally encapsulating a die over an active surface of the die. The active surface has an electrical pad. A first opening is formed through the encapsulant to the electrical pad. In some embodiments the first opening is formed using a photolithographic technique. In some embodiments the first opening is formed using a temporary pillar by forming the temporary pillar over the electrical pad, forming the encapsulant, and then exposing and removing the temporary pillar. A conductive pattern is formed over the encapsulant including a via formed in the first opening to the electrical pad of the die's active surface. In some embodiments, a dielectric layer is formed over the encapsulant, and the conductive pattern is over the dielectric layer. Embodiments may include forming additional dielectric layers and conductive patterns.

Abstract: The present disclosure provides a semiconductor package, including a first layer, a second layer, and a conductive array. The first layer includes a packaged die having a carrier surface and a molding surface, and a first die structure in proximity to the carrier surface. An active region of the first die structure is electrically coupled to the packaged die through a solder. The second layer includes a second die structure, the second die structure being connected to the active region of the first die structure by a first redistributed layer (RDL). The conductive array is connected to an active region of the second die structure by a second RDL. The present disclosure also provides a method for manufacturing the aforesaid semiconductor package.

Abstract: A method includes forming a first plurality of redistribution lines, forming a first metal post over and electrically connected to the first plurality of redistribution lines, and bonding a first device die to the first plurality of redistribution lines. The first metal post and the first device die are encapsulated in a first encapsulating material. The first encapsulating material is then planarized. The method further includes forming a second metal post over and electrically connected to the first metal post, attaching a second device die to the first encapsulating material through an adhesive film, encapsulating the second metal post and the second device die in a second encapsulating material, planarizing the second encapsulating material, and forming a second plurality of redistributions over and electrically coupling to the second metal post and the second device die.

Abstract: A method of manufacturing a semiconductor structure includes forming a redistribution layer (RDL); forming a conductive member over the RDL; performing a first electrical test through the conductive member; disposing a first die over the RDL; performing a second electrical test through the conductive member; and disposing a second die over the first die and the conductive member.