Patents by Inventor Feng Chi

Feng Chi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250261467
    Abstract: Some embodiments relate to a pixel array, including: a substrate including a first side and a second side opposite the first side; a plurality of photodetectors in the substrate, the plurality of photodetectors symmetrically disposed around a middle axis between the plurality of photodetectors, where the middle axis is perpendicular to the first side and the second side; a first doped region at the middle axis between the plurality of photodetectors and on the first side of the substrate; a frontside deep trench isolation (DTI) structure on the first side of the substrate and extending directly between photodetectors of the plurality of photodetectors; and a backside DTI structure on the second side of the substrate and spacing the frontside DTI structure from the middle axis.
    Type: Application
    Filed: February 12, 2024
    Publication date: August 14, 2025
    Inventors: Hsin-Hung Chen, Wen-I Hsu, Chih-Kuan Yu, Feng-Chi Hung, Jen-Cheng Liu, Dun-Nian Yaung
  • Publication number: 20250255027
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a plurality of photodetectors in a substrate. The substrate comprises a first surface opposite a second surface. An outer isolation structure is disposed in the substrate and laterally surrounds the plurality of photodetectors. The outer isolation structure has a first height. An inner isolation structure is spaced between sidewalls of the outer isolation structure. The inner isolation structure is disposed between adjacent photodetectors in the plurality of photodetectors. The outer isolation structure and the inner isolation structure respectively extend from the second surface toward the first surface. The inner isolation structure comprises a second height less than the first height.
    Type: Application
    Filed: April 23, 2025
    Publication date: August 7, 2025
    Inventors: Yen-Ting Chiang, Yen-Yu Chen, Wen Hao Chang, Tzu-Hsuan Hsu, Feng-Chi Hung, Shyh-Fann Ting, Jen-Cheng Liu
  • Publication number: 20250255024
    Abstract: Some embodiments relate to A deep trench isolation (DTI) structure, including: a DTI core extending into a substrate; a first film surrounding the DTI core and having a first material with a first conduction band at a first band energy; a second film between the first film and the DTI core, the second film having a second material with a second conduction band at a second band energy less than the first band energy; and a third film between the second film and the DTI core, the third film having a third material with a third conduction band at a third band energy greater than the second band energy.
    Type: Application
    Filed: February 6, 2024
    Publication date: August 7, 2025
    Inventors: Bing Cheng You, Feng-Chi Hung, Wen-I Hsu, Ming-En Chen, Jen-Cheng Liu, Dun-Nian Yaung
  • Publication number: 20250248145
    Abstract: An image sensor includes a plurality of pixels. At least one pixel includes first and second photosensitive regions, first and second transfer gate transistors and a floating diffusion region. The first and second photosensitive regions are located within a substrate and adjacent to each other. The first and second photosensitive regions are different in at least one of doping depth and conductivity type. The first and second photosensitive regions are overlapped with an opening of a grid structure disposed on a backside surface of the substrate. The first and second transfer gate transistors are disposed on a frontside surface of the substrate and respectively overlapped with the first and second photosensitive regions. The floating diffusion region is located within the substrate and shared between the first and second photosensitive regions.
    Type: Application
    Filed: January 31, 2024
    Publication date: July 31, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Keng-Yu Chou, Cheng-Yu Huang, Yi-Hsuan Wang, Cheng-Ying Ho, Kai-Chun Hsu, Tzu-Jui Wang, Bo-Yuan Su, Wei-Chieh Chiang, Feng-Chi Hung
  • Publication number: 20250248141
    Abstract: Some embodiments relate to an integrated circuit (IC) device including a first IC die and a second IC die. The first IC die includes first and second conductive structures at a first surface of the first IC die, and the first and second conductive structures are laterally separated by a first dielectric structure. The second IC die includes third and fourth conductive structures at a first surface of the second IC die, and the third and fourth conductive structures are laterally separated by a second dielectric structure. The first surface of the first IC die faces the first surface of the second IC die such that the first conductive structure vertically contacts the third conductive structure to form a first capacitor electrode, and the second conductive structure vertically contacts the fourth conductive structure to form a second capacitor electrode. The first and second capacitor electrodes form a capacitor.
    Type: Application
    Filed: January 29, 2024
    Publication date: July 31, 2025
    Inventors: Ping-Chieh Chin, Feng-Chi Hung, Jen-Cheng Liu, Wen-I Hsu
  • Patent number: 12355899
    Abstract: A method and system for authentication through deep-links is provided. A communication device can provide a credential to a remote server computer as part of an authentication process. The remote server computer can challenge the communication device by transmitting a deep-link containing a one-time passcode to the communication device. The communication device can activate and parse the deep-link to determine the one-time passcode. The one-time passcode can be transmitted back to the remote server computer by the communication device. The remote server computer can verify that received one-time passcode matches the sent one-time passcode in order to complete the authentication process.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: July 8, 2025
    Assignee: Visa International Service Association
    Inventor: Feng Chi Wang
  • Publication number: 20250193800
    Abstract: A long-distance Wi-Fi communication method is provided. The long-distance Wi-Fi communication method may include the following steps. An apparatus may connect with a network node at a contention access stage. The apparatus may receive the target wake time (TWT) configuration at the contention access stage from a network node, wherein the TWT configuration may comprise a TWT service period (SP) and a TWT interval associated with the apparatus. The apparatus may perform a communication with the network node during the TWT SP based on the TWT configuration at a contention-free stage.
    Type: Application
    Filed: December 11, 2023
    Publication date: June 12, 2025
    Inventors: Feng-Chi WU, Chih-Kun CHANG
  • Publication number: 20250189993
    Abstract: A control system for controlling a flight vehicle, includes the following elements. A first buffer, coupled to a motor unit of the flight vehicle. A second buffer, coupled to the motor unit. A master control unit, for generating a first actuation signal, the first actuation signal is selectively provided to the motor unit through the first buffer. A slave control unit, for generating a second actuation signal, the second actuation signal is selectively provided to the motor unit through the second buffer. A logic determination unit, for generating a switch control signal to control the first buffer and the second buffer to be turned ON or turned OFF. The master control unit and the slave control unit monitor each other for abnormality, when the master control unit is abnormal, the second actuation signal is provided to the motor unit in response to the switch control signal.
    Type: Application
    Filed: December 11, 2023
    Publication date: June 12, 2025
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Cheng-Ta Chen, Yin-Ling Kuo, Wen-Chuan Chen, Hu-Hsuan Tsui, Feng-Chi Lee, Ding-Huang Yeh, Chia-Ming Liang, Ya-Ting Yang
  • Patent number: 12326537
    Abstract: An optical tracking device is used to track a target object. An outer surface of the target object is divided into a first region and a second region adjacent to each other, and a marker is disposed on the first region. The optical tracking device includes an optical sensor and an operation processor. The optical sensor has auto exposure function and is adapted to acquire a detection image containing at least one of the first region and the second region. The operation processor is electrically connected to the optical sensor and adapted to analyze variation of an exposure parameter of the auto exposure function for determining whether the first region is appeared in the detection image, so as to acquire an operation datum of the target object.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: June 10, 2025
    Assignee: PixArt Imaging Inc.
    Inventors: Ching Geak Chan, Chung-Ting Yang, Feng-Chi Liu
  • Publication number: 20250185400
    Abstract: Some embodiments are directed towards an image sensor device. A photodetector is disposed in a semiconductor substrate, and a transfer transistor is disposed over photodetector. The transfer transistor includes a transfer gate having a lateral portion extending over a frontside of the semiconductor substrate and a vertical portion extending to a first depth below the frontside of the semiconductor substrate. A gate dielectric separates the lateral portion and the vertical portion from the semiconductor substrate. A backside trench isolation structure extends from a backside of the semiconductor substrate to a second depth below the frontside of the semiconductor substrate. The backside trench isolation structure laterally surrounds the photodetector, and the second depth is less than the first depth such that a lowermost portion of the vertical portion of the transfer transistor has a vertical overlap with an uppermost portion of the backside trench isolation structure.
    Type: Application
    Filed: February 13, 2025
    Publication date: June 5, 2025
    Inventors: Feng-Chi Hung, Dun-Nian Yaung, Jen-Cheng Liu, Wei Chuang Wu, Yen-Yu Chen, Chih-Kuan Yu
  • Publication number: 20250172679
    Abstract: A transceiving method of signals and a radar apparatus are provided. The radar apparatus includes a transmitting circuit, multiple transmitting antennas, multiple receiving antennas, a receiving circuit, a selection controller and a selection circuit. The transmitting circuit generates a transmission signal based on the detection signal. The receiving antenna receives multiple reflected signals. The selection controller generates a control signal based on the period of the detection signal. The selection circuit selects one of multiple transmitting antennas to transmit the transmission signal and selects one of multiple receiving antennas to receive the reflected signal to generate a radio frequency signal based on the control signal.
    Type: Application
    Filed: December 27, 2023
    Publication date: May 29, 2025
    Applicant: RichWave Technology Corp.
    Inventors: Hsiang-Feng Chi, Po-An Chen
  • Patent number: 12300670
    Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first integrated chip (IC) tier and a second IC tier. The second IC tier comprises a second plurality of conductors within a second insulating structure disposed on the second semiconductor body. A conductive pad is electrically coupled to the second plurality of conductors and has a conductive surface available to a side of the second semiconductor body facing away from the first semiconductor body. The IC first tier contacts the second IC tier along a bonding interface including one or more conductive regions and one or more insulating regions. The one or more conductive regions laterally outside of a bottom surface of the conductive pad.
    Type: Grant
    Filed: July 20, 2023
    Date of Patent: May 13, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sin-Yao Huang, Chun-Chieh Chuang, Ching-Chun Wang, Sheng-Chau Chen, Dun-Nian Yaung, Feng-Chi Hung, Yung-Lung Lin
  • Publication number: 20250143001
    Abstract: The present disclosure relates to a multi-dimensional image sensor integrated chip (IC) structure. The multi-dimensional image sensor IC structure includes a plurality of image sensing elements disposed within a plurality of pixel regions arranged in a pixel array of a first integrated chip (IC) tier. The plurality of pixel regions include a plurality of active pixel regions and one or more dummy pixel regions. A plurality of pixel support devices are disposed on a second substrate within a second IC tier that is bonded to the first IC tier. A plurality of logic devices are disposed within a third IC tier that is bonded to the second IC tier. A through substrate via (TSV) extends vertically through the second substrate laterally outside of the plurality of pixel support devices and directly below the pixel array.
    Type: Application
    Filed: January 2, 2024
    Publication date: May 1, 2025
    Inventors: Hsin-Hung Chen, Wen-I Hsu, Feng-Chi Hung, Jen-Cheng Liu, Dun-Nian Yaung
  • Publication number: 20250142232
    Abstract: Various embodiments of the present disclosure are directed to a stacked complementary metal-oxide semiconductor (CMOS) image sensor. A first integrated circuit (IC) chip and a second IC chip are vertically stacked. A pixel sensor spans the first and second IC chips. The pixel sensor comprises a first transfer transistor and a photodetector that are at the first IC chip, and further comprises a source-follower transistor, a transistor capacitor, and a second transfer transistor that are at the second IC chip. The transistor capacitor and the second transfer transistor are electrically coupled in series from a source/drain region of the first transfer transistor to a gate electrode of the source-follower transistor.
    Type: Application
    Filed: January 8, 2024
    Publication date: May 1, 2025
    Inventors: Chih-Kuan Yu, Feng-Chi Hung, Wen-I Hsu, Bing Cheng You, Jen-Cheng Liu, Dun-Nian Yaung
  • Publication number: 20250133856
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a first integrated circuit (IC) die stacked with a second IC die. The first IC die includes a plurality of photodetectors disposed within a first substrate. The second IC die includes a plurality of pixel transistors and a semiconductor capacitor disposed on a second substrate. The semiconductor capacitor includes a first capacitor electrode, a capacitor dielectric layer, and a doped capacitor region. The first capacitor electrode overlies the second substrate and comprises a protrusion disposed in the second substrate. The capacitor dielectric layer is disposed between the first capacitor electrode and the second substrate. The doped capacitor region is disposed within the second substrate and underlies the first capacitor electrode. The plurality of photodetectors, the plurality of pixel transistors, and the semiconductor capacitor define a pixel.
    Type: Application
    Filed: October 19, 2023
    Publication date: April 24, 2025
    Inventors: Shen-Hui Hong, Chun-Chieh Chuang, Feng-Chi Hung, Jen-Cheng Liu
  • Publication number: 20250126915
    Abstract: A p-type doping region around an isolation structure provides additional electrical isolation between pixel sensors of a pixel array. As a result, current leakage from a floating node of one pixel sensor into another is reduced. Therefore, dark current is reduced, and performance of the pixel array is improved. Additionally, pixel noise caused by electrons trapped in the isolation structure may be reduced.
    Type: Application
    Filed: October 13, 2023
    Publication date: April 17, 2025
    Inventors: Chih-Kuan YU, Wen-I HSU, Feng-Chi HUNG, Hsin-Hung CHEN, Jen-Cheng LIU, Dun-Nian YAUNG
  • Publication number: 20250126912
    Abstract: A semiconductor image-sensing structure includes a reflective grid and a reflective shield disposed over a substrate. The reflective grid is disposed in a first region, and the reflective shield is disposed in a second region separated from the first region. A thickness of the reflective shield is greater than a thickness of the reflective grid.
    Type: Application
    Filed: December 26, 2024
    Publication date: April 17, 2025
    Inventors: MING-HSIEN YANG, WEN-I HSU, KUAN-FU LU, FENG-CHI HUNG, JEN-CHENG LIU, DUN-NIAN YAUNG, CHUN-HAO CHOU, KUO-CHENG LEE
  • Patent number: 12278250
    Abstract: A semiconductor device includes a substrate having a front side and a back side opposite to each other. A plurality of photodetectors is disposed in the substrate within a pixel region. An isolation structure is disposed within the pixel region and between the photodetectors. The isolation structure includes a back side isolation structure extending from the back side of the substrate to a position in the substrate. A conductive plug structure is disposed in the substrate within a periphery region. A conductive cap is disposed on the back side of the substrate and extends from the pixel region to the periphery region and electrically connects the back side isolation structure to the conductive plug structure. A conductive contact lands on the conductive plug structure, and is electrically connected to the back side isolation structure through the conductive plug structure and the conductive cap.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: April 15, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Hsing-Chih Lin, Feng-Chi Hung, Shyh-Fann Ting
  • Patent number: D1072752
    Type: Grant
    Filed: March 2, 2023
    Date of Patent: April 29, 2025
    Inventors: Feng Chi, Lin Guo, Jinming Zhou
  • Patent number: D1081574
    Type: Grant
    Filed: March 3, 2023
    Date of Patent: July 1, 2025
    Inventors: Feng Chi, Lin Guo, Jinming Zhou