Patents by Inventor Feng Han
Feng Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12094051Abstract: The present disclosure provides to a processing device and a processing method for a ray tracing acceleration structure. The processing device includes a machine-readable storage medium and a processor. The processor executes a descriptor to simulate the interaction between the ray with the scene, and the descriptor includes a first pointer and a second pointer. The processor obtains the TLAS by using the first pointer. The processor traverses the TLAS to find a leaf node in the TLAS that intersects the ray, and the intersected leaf node includes an instance identifier. The processor obtains the intersected instance record from the instance buffer pointed to by the second pointer by using the instance identifier, and the intersected instance record includes a third pointer. The processor obtains the BLAS by using the third pointer. The processor traverses the BLAS to find a primitive node in the BLAS that intersects the ray.Type: GrantFiled: September 7, 2022Date of Patent: September 17, 2024Assignee: Shanghai Biren Technology Co., LtdInventors: Lin Chen, Feng Han
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Patent number: 12094799Abstract: A method of making an integrated circuit includes operations related to forming an oxide layer over a top surface of a substrate; depositing a layer of semiconductor material over the oxide layer; and manufacturing a thermal substrate contact extending through the layer of semiconductor material and the oxide layer to the top surface of the substrate. The thermal substrate contact is against, but does not extend through, the substrate. Manufacturing a thermal substrate contact further includes operations of etching a first opening through the layer of semiconductor material to expose the oxide layer; etching a second opening through the first opening to expose the substrate; and filling the first opening and the second opening with a conductive material.Type: GrantFiled: August 10, 2022Date of Patent: September 17, 2024Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY, LIMITEDInventors: Jian Wu, Feng Han, Shuai Zhang
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Patent number: 12082131Abstract: The present disclosure relates to time synchronization methods and apparatus. In one example method, a terminal receives a system information block (SIB) sent by a distributed unit (DU), where the SIB is generated by the DU, the SIB includes time information, and the time information indicates a moment corresponding to a boundary of a system frame number (SFN) at which an end boundary of a system information (SI) window for sending the SIB is located, or indicates a moment corresponding to a boundary of an SFN immediately after an end boundary of an SI window for sending the SIB. The UE processes the time information to obtain a time reference.Type: GrantFiled: July 1, 2021Date of Patent: September 3, 2024Assignee: Huawei Technologies Co., Ltd.Inventors: Xiaoying Xu, Qufang Huang, Feng Han
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Publication number: 20240284273Abstract: This application provides a communication method and apparatus to improve communication performance of a novel terminal device. The method includes: receiving a first message from a source access network device, and determining a capability of a first cell based on the first message, where the first message indicates to hand over a first terminal device to the first cell, the first cell corresponds to a target access network device, and the capability of the first cell is whether the first cell supports serving a terminal device with a reduced capability; and determining, based on the capability of the first cell, whether to access the first cell.Type: ApplicationFiled: April 30, 2024Publication date: August 22, 2024Inventors: Xi Xie, Junren Chang, Jiaojiao Li, Zheng Yu, Feng Han, Lei Chen
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Publication number: 20240267889Abstract: This application discloses a communication method and a communication apparatus. The method includes: A first access network device receives paging capability information from a core network device or a second access network device, determines a paging area based on the paging capability information, and sends a paging message to a terminal device in the determined paging area. The paging capability information indicates one or more of the following capabilities: a maximum transmit power supported by the terminal device on a first frequency band; a bandwidth configuration supported by the terminal device; whether the terminal device supports a frequency offset of 7.5 kHz; a type of the terminal device; or a number of Rx chains supported by the terminal device. In other words, the paging capability information indicates a plurality of paging capabilities of the terminal device.Type: ApplicationFiled: April 19, 2024Publication date: August 8, 2024Inventors: Hongyu Xiang, Bingzhao Li, Lei Chen, Feng Han, Chenwan Li
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Publication number: 20240259888Abstract: This application provides a data transmission method and a communication apparatus. The data transmission method includes: A terminal device receives first information from a first access network device, where the first information indicates the terminal device to be handed over and connected to a second access network device. The terminal device sends a first data packet to the second access network device after the terminal device successfully accesses the second access network device, where the first data packet is a data packet that has been sent by the terminal device to the first access network device before the terminal device successfully accesses the second access network device.Type: ApplicationFiled: April 11, 2024Publication date: August 1, 2024Inventors: Xiaoying XU, Chong LOU, Qiang FAN, Feng HAN
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Publication number: 20240250170Abstract: A semiconductor device includes a gate structure, a drift region, a source region, a drain region, a first doped region, and a second doped region. The gate structure is over a semiconductor substrate. The drift region is in the semiconductor substrate and laterally extends past a first side of the gate structure. The source region is in the semiconductor substrate and adjacent a second side of the gate structure opposite the first side. The drain region is in the drift region. The first doped region is in the drift region and between the drain region and the gate structure. The second doped region is within the drift region. The second doped region forms a P-N junction with the first doped region at a bottom surface of the first doped region.Type: ApplicationFiled: April 3, 2024Publication date: July 25, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TSMC China Company LimitedInventors: Lian-Jie LI, Yan-Bin LU, Feng HAN, Shuai ZHANG
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Patent number: 12047888Abstract: Examples in this application provide a communication method and a communications apparatus. One example communication method includes determining to deactivate or activate a first synchronization signal and physical broadcast channel block (SSB), and sending a first request message to a second network device. Specifically, the first request message carries first indication information for indicating the first SSB, and when the first SSB is an SSB in the first network device, the first request message requests the second network device to update a state of the first SSB, and the second network device maintains information about at least one SSB in the first network device, or when an active first SSB is an SSB in the second network device, the first request message requests the second network device to activate the first SSB, and the first network device maintains information about at least one SSB in the second network device.Type: GrantFiled: August 13, 2021Date of Patent: July 23, 2024Assignee: Huawei Technologies Co., Ltd.Inventors: Shuigen Yang, Feng Han, Yinghao Jin, Wei Tan
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Patent number: 12040358Abstract: A super junction structure includes a substrate, wherein the substrate has a first conductivity type. The super junction structure includes an epitaxial layer over the substrate, wherein the epitaxial layer has a second conductivity type opposite the first conductivity type. The super junction structure further includes a bury layer between the epitaxial layer and the substrate, wherein the bury layer has the second conductivity type. The super junction structure further includes a conductive pillar in the epitaxial layer, wherein the conductive pillar has the first conductivity type, sidewalls of the conductive pillar are angled with respect to a top-most surface of the epitaxial layer, a bottom surface of the conductive pillar is rounded, and a top-most surface of the conductive pillar is coplanar with the top-most surface of the epitaxial layer.Type: GrantFiled: November 9, 2021Date of Patent: July 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shuai Zhang, Feng Han, Jian Wu, Lian-Jie Li, Zhong-Hao Chen
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Publication number: 20240236946Abstract: A communication method and device are provided. A first message is received from a base-station central unit, where the first message is associated with determining whether a to-be-paged terminal device supports a first grouping manner and/or determining a paging manner for the to-be-paged terminal device. The terminal device is paged in a first paging manner that is determined based on the first message. A base-station distributed unit can determine, based on the first message, whether the to-be-paged terminal device supports a grouping manner or a grouping manner that can be supported by the to-be-paged terminal device. In this way, in a split architecture, the base-station distributed unit can also complete paging on the terminal device.Type: ApplicationFiled: March 22, 2024Publication date: July 11, 2024Applicant: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Yiru Kuang, Haibo Xu, Feng Han
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Publication number: 20240196383Abstract: This application is applicable to the field of communication technologies. Embodiments of this application provide a resource allocation method, an apparatus, and a system. The resource allocation method provided in embodiments of this application includes: determining at least two PDCCH resources for at least two terminal devices, where the at least two PDCCH resources are in a one-to-one correspondence with the at least two terminal devices, and a distance between a frequency domain position of each of the at least two PDCCH resources and a reference frequency domain position meets a preset condition, or a distance between frequency domain positions of two PDCCH resources that are adjacent in frequency domain in the at least two PDCCH resources meets a preset condition; and respectively sending information to the at least two terminal devices on the at least two PDCCH resources.Type: ApplicationFiled: January 26, 2024Publication date: June 13, 2024Applicant: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Feng HAN, Long YU
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Patent number: 12010405Abstract: A computer-implemented method includes receiving a viewer request for playing a video summary of a video, wherein the viewer request includes a length of the video summary, generating the video summary of the viewer-requested length comprising a set of frames selected from the video based on audience reviews of the video, and playing a video stream of the video summary.Type: GrantFiled: December 3, 2021Date of Patent: June 11, 2024Assignee: International Business Machines CorporationInventors: Kun Yan Yin, Lei Mei, Yan Hu, Yan Feng Han, Qi Ruan
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Patent number: 11978797Abstract: A semiconductor device includes a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is over a semiconductor substrate. The drift region is in the semiconductor substrate and laterally extends past a first side of the gate structure. The source region is in the semiconductor substrate and adjacent a second side of the gate structure opposite the first side. The drain region is in the drift region. The doped region is in the drift region and between the drain region and the gate structure. From a top view the doped region has a strip pattern extending in parallel with a strip pattern of the gate structure.Type: GrantFiled: August 9, 2022Date of Patent: May 7, 2024Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TSMC CHINA COMPANY LIMITEDInventors: Lian-Jie Li, Yan-Bin Lu, Feng Han, Shuai Zhang
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Publication number: 20240139901Abstract: The present disclosure provides a tray assembly having a dual-structure. The tray assembly comprises an upper tray and a lower tray. The lower tray is capable of being easily disengaged from the upper tray by use of a dovetail joint that allows the lower tray to slidably move relative to the upper tray. The tray assembly also utilizes magnets to reduce the use of mechanical joints. The combination of the magnets together with the dovetail joint provides a quick and efficient way of sliding the lower tray in and out from the upper tray. The lower tray having a collection region collects any external, foreign materials generated during a chemical mechanical polishing/planarizing process. After the cleaning process, the lower tray can be slid back into the upper tray for use.Type: ApplicationFiled: January 4, 2024Publication date: May 2, 2024Inventors: Yu-Feng Han, A.S. Chen
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Patent number: 11973083Abstract: A method of making an integrated circuit includes surrounding a first bias pad with dielectric material of a buried oxide layer. The method includes adding dopants to a layer of semiconductor material over the first bias pad. The method includes depositing a gate dielectric and a gate electrode over a top surface of the layer of semiconductor material. The method includes etching the gate dielectric and the gate electrode to isolate a gate electrode over the layer of semiconductor material. The method includes depositing an inter layer dielectric (ILD) material over the gate electrode and the layer of semiconductor material. The method includes etching at least one bias contact opening down to the first bias pad. The method includes filling the at least one bias contact opening with a bias contact material. The method includes electrically connecting at least one bias contact to an interconnect structure of the semiconductor device.Type: GrantFiled: May 10, 2022Date of Patent: April 30, 2024Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY, LIMITEDInventors: Jian Wu, Feng Han, Shuai Zhang
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Patent number: 11968558Abstract: The present disclosure relates to data transmission methods and apparatus to implement quality of service (QoS) flow-based data transmission in an architecture in which a central unit-control plane (CU-CP) and a central unit-user plane (CU-UP) are separated from each other. In one example method, when receiving data of a QoS flow, the CU-UP may send a QoS flow identity (ID) and a protocol data unit (PDU) session ID that are of the data of the QoS flow to the CU-CP, where a PDU session corresponding to the PDU session ID includes the data of the QoS flow.Type: GrantFiled: March 24, 2021Date of Patent: April 23, 2024Assignee: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Feng Han, Xingxing Hu, Yinghao Jin, Wei Tan
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Patent number: 11947974Abstract: Disclosed are an application start method and an electronic device. The method includes: obtaining, by a SystemServer process in an electronic device, a start message of a first application; sending, by the SystemServer process, a creation request for an application process to a daemon process in response to the start message, where the creation request includes application information of the first application; creating, by the daemon process, the application process for the first application in response to the creation request, where the application process includes a first thread and a second thread; executing, by the application process, the first thread and the second thread in parallel, where the first thread executes initialization of a main thread of the first application, and the second thread creates a first class loader according to the application information to load a class file of the first application.Type: GrantFiled: September 17, 2020Date of Patent: April 2, 2024Assignee: Honor Device Co., Ltd.Inventors: Wenyong Sun, Yulin Ren, Feng Han, FeiFei Cheng
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Patent number: 11947925Abstract: A user input in a source language is received. A set of contextual data is received. The user input is encoded into a user input feature vector. The set of contextual data is encoded into a context feature vector. The user input feature vector and the context feature vector are used to generate a fusion vector. An adaptive neural network is trained to identify a second context feature vector, based on the fusion vector. A second user input in the source language is received for translation into a target language. The adaptive neural network is used to determine, based on the second context feature vector, a second user input feature vector. The second user input feature vector is decoded, based on the source language and the target language, into a target language output. A user is notified of the target language output.Type: GrantFiled: May 21, 2020Date of Patent: April 2, 2024Assignee: International Business Machines CorporationInventors: Lei Mei, Kun Yan Yin, Yan Hu, Qi Ruan, Yan Feng Han
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Patent number: 11915446Abstract: A method is for generating a medical result image using a current image, a target image and a reference image. All images depict at least partially the same body region of a patient. In an embodiment, the method includes defining at least one image segment within the target image; registering the reference image with the target image by establishing a registration matrix for each image segment within the target image, the respective registration matrix being specific for the respective image segment; detecting a position of a surgical instrument in the current image, the position corresponding to an image segment of the target image; and generating the medical result image by fusing the current image and the reference image using the registration matrix assigned to the image segment according to the position of the surgical instrument within the current image.Type: GrantFiled: October 24, 2018Date of Patent: February 27, 2024Assignee: SIEMENS HEALTHINEERS AGInventors: Qi Sun, Jing Feng Han
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Patent number: 11917481Abstract: A load balancing method which includes a first radio access network node that receives load information of a first load type of a second radio access network node, where the first load type includes any one or more of the following: a network slice load, V2X load, and SUL load; and the first radio access network node obtains the load information of the first load type, so that load balancing can be performed based on a load status of a network slice, a load status of a V2X service, or a load status of a UL/SUL.Type: GrantFiled: March 29, 2021Date of Patent: February 27, 2024Assignee: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Xiaoli Shi, Henrik Olofsson, Wenjie Peng, Qinghai Zeng, Feng Han