Abstract: A delay-enhanced inverter circuit (DE-inverter) includes: a non-delay-enhanced inverter circuit (NE-inverter) having an output at a first node and an input at a second node; and a capacitive device feedback-coupled between the first node and the second node. The capacitive device includes: a first positive-channel metal-oxide (PMOS) field-effect transistor (FET) (PFET) feedback-coupled between the first node and the second node, the first PFET having a capacitor-configuration; and a first negative-channel metal-oxide (NMOS) FET (NFET) feedback-coupled between the first node and the first reference voltage, the first NFET having a capacitor-configuration.

Abstract: The present disclosure relates to a trench-type DMOS device and manufacturing method therefor. The trench-type DMOS device includes an expansion gate layer disposed on an inner surface of a gate insulation layer, and the expansion gate layer includes a first expansion gate region with a second conduction type, a second expansion gate region with a first conduction type, and a third expansion gate region, which improves a contradiction relationship between voltage resistance and specific on-resistance of the trench-type DMOS device. Therefore, the trench-type DMOS device has both high voltage resistance and low specific on-resistance. The trench-type DMOS device has a longitudinal voltage resistance structure, which reduces device area and further decreases device on-resistance. At the same time, a source region and a drain region in the trench-type DMOS device may be led out on its front surface, which is compatible with CMOS.

Abstract: Provided herein are human C6 binding molecules and nucleic acid sequences encoding such molecules. In particular embodiments, provided herein are human C6 binding molecules (e.g., monoclonal antibodies or antigen binding fragments thereof) with particular light and/or heavy chains variable regions, or light chain and/or heavy chain CDRs, and methods for using such molecules to treat a disease, such as a complement-mediated disease.

Abstract: The present disclosure provides a DMOS device with a junction field plate and its manufacturing method. A drain region is located on a surface of a semiconductor substrate. A source region is located in the semiconductor substrate at a bottom of a first trench. A gate electrode is located at the bottom of the first trench. The junction field plate improves an effect on reducing surface resistance. At the same time, a depth of trenches in the DMOS device may be reduced, and thereby a depth-to-width ratio of the device is reduced, improving the feasibility of increasing a voltage resistance level. Both the source region and the drain region in the DMOS device are led out on a same surface. A second doped polycrystalline silicon layer includes a first doped sublayer and a second doped sublayer with different conduction types.

Abstract: A double-row conveyor belt feeding apparatus includes a charging conveyor belt; a box body limiting baffle configured to block box bodies from entering a first conveyor belt and a second conveyor belt; box body limiting push rods configured to limit and fix a third row of box bodies; and a box body moving push rod configured to transfer a first row of box bodies and a second row of box bodies and to be driven to push the first row of box bodies to move by pushing the second row of box bodies, so as to make the first row of box bodies move onto the first conveyor belt. After the first row of box bodies move onto the first conveyor belt, the box body moving push rods are configured to be driven to cause the second row of box bodies to move backwards onto the second conveyor belt.

Abstract: A distributed object storage method, a device and a medium are provided, and the method includes: splitting a target object to be stored into a quantity of key-value pair data; determining target partitions corresponding respectively to the quantity of key-value pair data from a plurality of partitions of a preset distributed object storage system; determining, based on a preset partition view, data storage nodes that currently hold the target partitions, to obtain data storage nodes corresponding respectively to the quantity of key-value pair data; and caching the quantity of key-value pair data into the data storage nodes corresponding respectively to the quantity of key-value pair data.

Abstract: A method for manufacturing a semiconductor device, and a semiconductor device. The method includes: providing a semiconductor substrate of a first conductivity type, forming a deep well of a second conductivity type in the semiconductor substrate, forming a channel region of the first conductivity type, a first well region of the first conductivity type, and a drift region of the second conductivity type in the deep well, the first well region and the channel region being spaced by a portion of the deep well, the drift region being located between the channel region and the first well region, forming an ion implantation region of the first conductivity type in the deep well, the ion implantation region being located under the drift region, and forming a source region of the second conductivity type and a drain region of the second conductivity type in the deep well.

Abstract: An IGZO thin-film transistor and a method for manufacturing same. The method includes: acquiring a substrate; forming an IGZO layer on the substrate by a solution process; doping V impurities on a surface of the IGZO layer by a spin doping process; forming a source electrode at one side of the IGZO layer, and forming a drain electrode at the other side; forming a gate dielectric layer on the doped IGZO layer; and forming a gate electrode on the gate dielectric layer.

Abstract: The purpose of the present invention is to provide a multi-dimensional coupled design method for the through-flow aerodynamic layout of a gas turbine transition section-high pressure compressor. In the present invention, the transition section and the high-pressure compressor are regarded as a system for integrated coupled design, and full integration with the upstream transition section is achieved in all dimensions and links of the high-pressure compressor's aerodynamic design. This realizes the integrated and collaborative design of the through-flow layout of the transition section and the high-pressure compressor, enabling the aerodynamic design of the transition section-high pressure compressor system in different dimensions to enter a stage of systematization, parameterization and refinement.

Abstract: A novel electroporation device for the delivery of vaccines that is both effective in generating a protective immune response and tolerable delivery to a subject (or near painless); and also methods of using same device to vaccinate a subject against a variety of infectious diseases and types of cancer in a near painless.

Abstract: A mechanical ore sample testing device integrating microwaves and cutter heads, and a use method are provided. The mechanical ore sample testing device comprises an equipment platform, a cutter head cutting system, a microwave fracturing system, a loading device and a cantilever crane. The microwave fracturing system and the cutter head cutting system are fixed to the equipment platform, and the loading device and the cantilever crane are mounted at a front end of the equipment platform. A microwave mechanical longwall mining method for a metallic ore is provided. Microwaves move in sync with machines to break a rock, microwave fracturing methods comprise high-power microwave integral fracturing and local rapid fracturing of soft microwave coaxial lines in the cutter heads; and a lateral cutting method of an ore body by a cutter head technology is applied, a mechanical rock breaking principle is changed from previous extrusion breaking to tension breaking.

Abstract: An integrated circuit (IC) includes a voltage source configured to generate a first voltage having a temperature-dependent voltage level, and a voltage-controlled oscillator (VCO) including a feedback path and a first VCO cell configured to receive the first voltage. The first VCO cell includes a series of stages, a first stage of the series of stages is configured to output a first signal internal to the first VCO cell based on the voltage level of the first voltage and an oscillation signal propagated on the feedback path, and a last stage of the series of stages is configured to output a second signal external to the first VCO cell based on the first signal and the voltage level of the first voltage.

Abstract: An apparatus for drug delivery is presented in accordance with aspects of the present disclosure. The apparatus includes a laser-driven photoacoustic microfluid pump (LDMP), an open tube capillary including a first end and a second end; the first end disposed on the LDMP, the open tube capillary configured to store a drug. The LDMP is configured to generate a fluidic jet from the drug and deliver the drug.

Abstract: A semiconductor device and a manufacturing method therefor are disclosed. The method includes: providing a substrate of a first conductivity type; forming doped regions of a second conductivity type in the substrate, the doped regions including adjacent first and second drift regions, wherein the second conductivity type is opposite to the first conductivity type; forming a polysilicon film on the substrate, the polysilicon film covering the doped regions; forming patterned photoresist on the polysilicon film, which covers the first and second drift regions, and in which the polysilicon film above a reserved region for a body region between the first and second drift regions is exposed; and forming the body region of the first conductivity type in the reserved region by performing a high-energy ion implantation process, the body region having a top surface that is flush with top surfaces of the doped regions, the body region having a bottom surface that is not higher than bottom surfaces of the doped regions.

Abstract: The present disclosure is directed to peptide immunogen constructs targeting the extracellular membrane-proximal domain of membrane-bound IgE (or IgE EMPD) and formulations thereof for the treatment of IgE-mediated allergic diseases. The IgE EMPD peptide immunogen constructs have a B cell epitope peptide of more than 20 amino acids, preferably cyclic, linked through an optional spacer to heterologous T helper cell (Th) epitopes derived from pathogen proteins. These peptide immunogen constructs and formulations thereof can stimulate the generation of highly specific antibodies in vaccinated hosts that are directed against the IgE EMPD peptide and are crossreactive with membrane-bound IgE on B lymphocytes committed to IgE secretion.

Abstract: A Group I metal cation excess cathode material comprising a Group I metal cation, at least two different non-Group I metal cations, and at least one counterion is disclosed. It is disclosed that the Group I metal cation excess cathode material delivers high capacity, rate capability, as well as long cycle life upon extensive 1,000 cycles at various current densities.

Abstract: A double-row conveyor belt feeding apparatus includes a charging conveyor belt; a box body limiting baffle configured to block box bodies from entering a first conveyor belt and a second conveyor belt; box body limiting push rods configured to limit and fix a third row of box bodies; and a box body moving push rod configured to transfer a first row of box bodies and a second row of box bodies and to be driven to push the first row of box bodies to move by pushing the second row of box bodies, so as to make the first row of box bodies move onto the first conveyor belt. After the first row of box bodies move onto the first conveyor belt, the box body moving push rods are configured to be driven to cause the second row of box bodies to move backwards onto the second conveyor belt.

Abstract: The present disclosure is directed to individual peptide immunogen constructs targeting portions of the Interleukin-6 (IL-6) protein, compositions containing the constructs, antibodies elicited by the constructs, and methods for making and using the constructs and compositions thereof. The disclosed IL-6 peptide immunogen constructs contain a B cell epitope from IL-6 linked to a heterologous T helper cell (Th) epitope directly or through an optional heterologous spacer. The IL-6 peptide immunogen constructs stimulate the generation of highly specific antibodies directed to the IL-6 receptor (IL-6R) binding site for the prevention and/or treatment of diseases impacted by IL-6 dysregulation.

Abstract: Embodiments provide a data receiving circuit. The data receiving circuit includes a first amplifier circuit and a second amplifier circuit. The first amplifier circuit is configured to receive a data signal, a first reference signal and a second reference signal, perform a first comparison between the data signal and the first reference signal and output a first signal pair, and perform a second comparison between the data signal and the second reference signal and output a second signal pair. The second amplifier circuit is configured to select to receive the first signal pair or the second signal pair as input signal pairs based on a feedback signal, amplify a voltage difference between the input signal pairs, and output a first output signal and a second output signal, wherein the feedback signal is obtained based on previously received data.

Abstract: A receiving circuit includes: an input buffer configured to receive a first input signal and a second input signal, compare the first input signal with the second input signal, and output a first output signal and a second output signal, where the first input signal and the second input signal are respectively a first signal and a second signal in a differential mode, the first input signal is one of the first signal and the second signal in a single-ended mode, the second input signal is a reference voltage signal, and the first signal and the second signal are complementary; and a conversion module configured to receive the first output signal and the second output signal and amplify a voltage difference between the first output signal and the second output signal.