Abstract: This invention provides a process or fabrication method of forming broadband anti-reflective (AR) coating over the mid-IR fluoride fiber for high power laser applications in mid-IR wavelength range. The AR coating consists of multiple-pair Lithium fluoride (LiF) and Al2O3, and was deposited by electron beam physical vapor deposition with an iron assistant source at low temperature (<60° C.). A thin encapsulation layer of Al2O3 was applied over the AR coating by atomic layer deposition technology. The measurements show the coating has a reflectivity of <1-1.5% in the range of 1.5-5.5 ?m. The laser induced damage threshold (LIDT) test shows the damage threshold is greater than 8.9 MW/cm2 with no sign of any damage on the coating exposed to atmosphere. The durability and environmental tests of the AR coating with PVD coated encapsulation layer show good humidity resistance in open air and no degradation of film quality and optical performance are observed.

Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

Abstract: A structured-light three-dimensional (3D) scanning system includes a projector that emits a projected light with a predetermined pattern onto an object; an image capture device that generates a captured image according to a reflected light reflected from the object, the predetermined pattern of the projected light being distorted due to 3D shape of the object, thereby resulting in a distorted pattern; a depth decoder that converts the distorted pattern into a depth map representing the 3D shape of the object; and a depth fusion device that generates a fused depth map according to at least two different depth maps associated with the object.

Abstract: Described herein are DGKalpha inhibitors and pharmaceutical compositions comprising said inhibitors. The subject compounds and compositions are useful for the treatment of a disease or disorder associated with DGKalpha.

Abstract: A method of determining the reliability of a high-voltage PMOS (HVPMOS) device includes determining a bulk resistance of the HVPMOS device, and evaluating the reliability of the HVPMOS device based on the bulk resistance.

Abstract: Joint opening structures of 3D memory devices and fabricating method are provided. A joint opening structure comprises a first through hole penetrating a first stacked layer and a first insulating connection layer, a first channel structure at the bottom of the first through hole, a first functional layer on the sidewall of the first through hole, a second channel structure on the sidewall of the first functional layer, a third channel structure over the first through hole, a second stacked layer on the third channel structure, a second insulating connection layer on the second stacked layer, a second through hole penetrating the second stacked layer and the second insulating connection layer, a second functional layer disposed on the sidewall of the second through hole, a fourth channel structure on the sidewall of the second functional layer, and a fifth channel structure over the second through hole.

Abstract: Methods and systems are provided for improving user authentication and access control by a network file system service in a multi-tenant public cloud environment by receiving a request for a connection to a file system from a file system client (client), sending an identification request for identification authentication of the client to a control system, receiving a response from the control system, establishing the connection to the file system upon determining that the connection to the file system is allowed based on cloud tenant information associated with the client, receiving an attempt to access the file system from the client by a sub-user, authenticating the sub-user based on the cloud tenant information, issuing a security token including a globally unique sub-user identifier of the sub-user, and using the security token to determine access rights of the sub-user to the file system for a subsequent request.

Abstract: A memory cell includes a transistor over a semiconductor substrate. The transistor includes a ferroelectric layer arranged along a sidewall of a word line. The ferroelectric layer includes a species with valence of 5, valence of 7, or a combination thereof. An oxide semiconductor layer is electrically coupled to a source line and a bit line. The ferroelectric layer is disposed between the oxide semiconductor layer and the word line.

Abstract: Methods, apparatus and systems for wireless communication nodes to discover each other are disclosed. In one embodiment, a method performed by a first wireless communication node is disclosed. The method comprises: transmitting, to each of a plurality of second wireless communication nodes, respective configuration information that is utilized by the second wireless communication node to transmit a discovery signal in order to be discovered by at least one other second wireless communication node. At least two of the plurality of second wireless communication nodes transmit their discovery signals at different time domain positions based on their respective configuration information.

Abstract: A gas detection and cleaning system for a vehicle is disclosed and includes an external modular base, a gas detection module and a cleaning device. The gas detection module is connected to a first external connection port of the external modular base to detect a gas in the vehicle and output the information datum. The information datum is transmitted through the first external connection port to a driving and controlling module of the external modular base, processed and converted into an actuation information datum for being externally outputted through a second external connection port of the external modular base. The cleaning device is connected with the second external connection port through an external port to receive the actuation information datum outputted from the second external connection port to actuate or close the cleaning device.

Abstract: A tubular LED lamp to be used with an external electronic power controlling device which is adapted to provide an input voltage to the lamp, comprising: a LED unit; a driving circuit for the LED unit; and a safety detection circuit adapted to detect whether the tubular LED lamp is correctly connected to an external lamp fixture; characterized in that further comprising: a holding current providing circuit adapted to provide a holding current through the electronic controlling device so as to maintain the electronic controlling device to be conductive; and a controlling circuit adapted to synchronize the safety detection circuit with the holding current providing circuit such that the safety detection circuit is adapted to carry out the detection when the hold current providing circuit is adapted to provide the holding current and the electronic controlling device is conductive; wherein the controlling circuit is adapted to deactivate the holding current providing circuit and the safety detection circuit after

Abstract: A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.

Abstract: A display panel and a display device are provided. The display panel includes: at least one first touch line and at least one second touch line that are located in different layers; and a first dielectric layer located between the at least one first touch line and the at least one second touch line. The display panel has a first region and a second region, in the second region, one of the at least one first touch line is electrically connected to one of the at least one second touch line by passing the first dielectric layer. A thickness A of the first dielectric layer in the first region in a direction perpendicular to a plane of the display panel, and a thickness B of the first dielectric layer in the second region in the direction perpendicular to the plane of the display panel satisfy: A>B?0.

Abstract: A source-network-load-storage coordination dispatching method in a background of a coupling of renewable energy sources, including: taking an expectation of a minimum grid operating cost in a dispatching cycle as an objective function; generating an approximate value function of an output of a set for generating electricity from renewable energy sources and a user load, and constructing a source-network-load-storage coordination dispatching model with combination of the objective function; obtaining forecast data of the output of a set for generating electricity from renewable energy sources and the user load, and inputting the forecast data into the dispatching model for solving; performing iterative updating on the approximate value function, importing the approximate value function after the iterative updating into the dispatching model for iterative solving, and terminating an iterative process until a solving result satisfies a preset convergence condition; and using a solving result of a last iteration

Abstract: A method for operating a conveying system is provided. An overhead hoist transport (OHT) vehicle is provided, wherein the OHT vehicle includes a gripping member configured to grip and hold a carrier, and a receiver configured to receive a signal. The signal is transmitted to the receiver of the OHT vehicle. The OHT vehicle is moved toward the carrier, and the carrier is gripped by the gripping member of the OHT vehicle. A lifting force is determined based on a weight of a carrier, a number of workpieces in the carrier, or a vertical distance between the OHT vehicle and the carrier, and the lifting force is applied to the carrier.

Abstract: A brush for applying a product including a cosmetic, care, or pharmaceutical product onto the keratinous surface of a user. The applying member includes a support head and a plurality of bristles extends from a distal end face of the support head along a longitudinal axis of the support head. The distal end face of the support head comprises a first distal end face and a second distal end face. The first distal end face and the second distal end face are substantially flat surfaces that intersect each other to form a ridge on the distal end face. The ridge on the distal end face extends along an axis perpendicular to a longitudinal axis of the support head.

Abstract: A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.

Abstract: The device includes a projecting device, an image sensor and a computing circuit. The projecting device provides a light beam having a predetermined pattern that is projected onto an object. The image sensor receives the light beam reflected from the object to generate an image. The computing circuit compares the image with a first ground-truth image and a ground-truth image to generate a first depth value and a second depth value respectively. The first and second depth values are combined to generate a depth result.

Abstract: An antenna structure includes a ground element, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, a fifth radiation element, and a dielectric substrate. The first radiation element has a feeding point. The first radiation element is coupled through the second radiation element to the ground element. The third radiation element is coupled to the first radiation element and the second radiation element. The fourth radiation element is coupled to the first radiation element and the third radiation element. The fifth radiation element is coupled to the ground element. The fifth radiation element is adjacent to the fourth radiation element. The ground element, the first radiation element, the second radiation element, the third radiation element, the fourth radiation element, and the fifth radiation element are disposed on the dielectric substrate.