Abstract: A package substrate and package assembly including a package substrate including a substrate body including electrical routing features therein and a surface layer and a plurality of first and second contact points on the surface layer including a first pitch and a second pitch, respectively, wherein the plurality of first contact points and the plurality of second contact points are continuous posts to the respective ones of the electrical routing features. A method including forming first conductive vias in a package assembly, wherein the first conductive vias include substrate conductive vias to electrical routing features in a package substrate and bridge conductive vias to bridge surface routing features of a bridge substrate; forming a first surface layer and a second surface layer on the package substrate; and forming second conductive vias through each of the first surface layer and the second surface layer to the bridge conductive vias.

Abstract: An apparatus includes a receiver configured to receive, from a base station, a control message indicating a sidelink resource pool. The apparatus further includes a transmitter configured to perform, after receiving the control message, a sidelink transmission using one or more sidelink resources. Based on a speed exceeding a threshold speed, the one or more sidelink resources include one of a first sidelink resource of the sidelink resource pool or a preconfigured sidelink resource. The one or more sidelink resources include the first sidelink resource based on the first sidelink resource being associated with a high speed flag. The one or more sidelink resources include the preconfigured sidelink resource based on a time interval since a previous sidelink transmission failing to exceed a threshold time interval and further based on the sidelink resource pool failing to indicate a resource associated with the high speed flag.

Abstract: The present disclosure provides a writing method, including: writing writing-table data into a corresponding main storage module; performing a calculation on writing-table data in each target main storage module by using a first predetermined algorithm to obtain an auxiliary value, for any target main storage module, the first predetermined algorithm being used for performing a calculation on writing-table data stored in the target main storage module and corresponding writing-table data stored in at least one main storage module other than the target main storage module, an inverse operation of the first predetermined algorithm being used for performing a calculation on any auxiliary value to obtain writing-table data participating in the calculation of the auxiliary value; and storing the auxiliary value into a corresponding auxiliary storage module. The present disclosure further provides a reading method, a computer readable storage medium, a processor chip and an electronic device.

Abstract: A wide bandgap semiconductor structure for an irradiation characteristic test includes a substrate with metal plates and a wide bandgap semiconductor part. The wide bandgap semiconductor part includes a gallium nitride layer, a barrier layer, P-type gallium nitride layers, source ohmic metal layers, and drain ohmic metal layers. The P-type gallium nitride layers are connected to a gate interconnection metal layer via gate metal layers and metal lead wires. A gate top metal layer is provided on the gate interconnection metal layer. Each source ohmic metal layer is provided with a source interconnection metal layer and source top metal layers. Each drain ohmic metal layer is provided with a drain interconnection metal layer and drain top metal layers. The wide bandgap semiconductor part is connected to the metal plates through the source top metal layers, the drain top metal layers, and the gate top metal layer.

Abstract: An IC device may include a semiconductor structure and a backside semiconductor structure over the semiconductor structure. The semiconductor structure and backside semiconductor structure may constitute the source or drain region of a transistor. The backside semiconductor structure may be closer to the backside of a substrate of the IC device than the semiconductor structure. The backside semiconductor structure may be formed at a lower temperature than the semiconductor structure. The backside semiconductor structure may have one or more different materials from the semiconductor structure. For instance, a semiconductor material in the backside semiconductor structure may have a different crystal direction from a semiconductor material in the semiconductor structure. As another example, the backside semiconductor structure may have one or more different chemical compounds from the semiconductor structure.

Abstract: An IC device with one or more transistors may also include one or more vias and jumpers for delivering power to the transistors. For instance, a via may be coupled to a power plane. A jumper may be connected to the via and an electrode of a transistor. With the via and jumper, an electrical connection is built between the power plane and the electrode. The via may be self-aligned. The IC device may include a dielectric structure at a first side of the via. A portion of the jumper may be at a second side of the via. The second side opposes the first side. The dielectric structure and the portion of the jumper may be over another dielectric structure that has a different dielectric material from the dielectric structure. The via may be insulated from another electrode of the transistor, which may be coupled to a ground plane.

Abstract: A solid electrolyte material having a general chemical formula of Li2+xM2+xM?1?xS6, where M is at least one of Al, Ga or In, M? is at least one of Si or Ge, and 0<x?0.5. The solid electrolyte material according to the application is simple in composition, contains no phosphorus sensitive to water, and has good Li+ conductivity at the same time.

Abstract: The present invention discloses a GaN HEMT device for irradiation damage detection which comprises a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer. A p-type gallium nitride layer is provided on the barrier layer. A drain and a source are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the gallium nitride layer. A Schottky metal layer is provided on the p-type gallium nitride layer. A first ohmic metal layer and a second ohmic metal layer are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the barrier layer. The second ohmic metal layer includes inner gear electrodes and outer gear electrodes, which are interdigital with each other.

Abstract: Innovations in adaptive encoding and decoding for units of a video sequence can improve coding efficiency. For example, some of the innovations relate to encoding/decoding that includes adaptive switching of color spaces between units within a video sequence. Other innovations relate encoding/decoding that includes adaptive switching of color sampling rates between units within a video sequence. Still other innovations relate encoding/decoding that includes adaptive switching of bit depths between units within a video sequence.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a first device may detect that a vehicle-to-everything (V2X) system information block (SIB) or reconfiguration information is unavailable based at least in part on a first subscription of the first device satisfying a condition. The first device may determine the V2X SIB or reconfiguration information associated with the first subscription based at least in part on V2X SIB or reconfiguration information associated with a second subscription of the first device. The first device may perform, to one or more of a network node or a second device and using the first subscription, a V2X transmission using the V2X SIB or reconfiguration information associated with the second subscription. Numerous other aspects are described.

Abstract: A memory device including a word line, a source line, a bit line, a memory layer, a channel material layer is described. The word line extends in a first direction, and liner layers disposed on a sidewall of the word line. The memory layer is disposed on the sidewall of the word line between the liner layers and extends along sidewalls of the liner layers in the first direction. The liner layers are spaced apart by the memory layer, and the liner layers are sandwiched between the memory layer and the word line. The channel material layer is disposed on a sidewall of the memory layer. A dielectric layer is disposed on a sidewall of the channel material layer. The source line and the bit line are disposed at opposite sides of the dielectric layer and disposed on the sidewall of the channel material layer. The source line and the bit line extend in a second direction perpendicular to the first direction. A material of the liner layers has a dielectric constant lower than that of a material of the memory layer.

Abstract: The present invention discloses a multi-degree-of-freedom numerical control turntable including: a B-shaft rotating assembly; a C1-shaft workbench swing assembly; a C2-shaft workbench rotating assembly; and an S-shaft workbench movement assembly. The B-shaft rotating assembly includes a rotating connection land and a B-shaft power control mechanism; the C2-shaft workbench rotating assembly includes a movement base, a workbench and a C2-shaft power control mechanism; the S-shaft workbench movement assembly includes a swing base and an S-shaft power control mechanism; and the C1-shaft workbench swing assembly includes a swing arm and a C1-shaft power control mechanism, with the C1-shaft line intersecting the B-shaft line. The S-shaft power control mechanism can drive the movement base to move along an S-shaft line on the swing base to cause a region to be machined of a workpiece to approach the intersection point of the C1-shaft line and the B-shaft line.

Abstract: The present invention discloses a GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereof. The transistor includes a substrate layer, a gallium nitride layer, a barrier layer, and a gate structure successively arranged from bottom to top. The gallium nitride layers on both sides of the barrier layer are respectively provided with a source electrode and a drain electrode on the top surface. The gate structure is located near the source electrode and includes a p-type gallium nitride layer, a dielectric layer, an Ohmic metal pillar, and a Schottky metal layer. The present invention solves the breakdown problem caused by the inability to release impact energy during the switching process by introducing an asymmetric multi-integrated gate structure.

Abstract: A tungsten-base alloy material and a preparation method therefor. The preparation method comprises: 1) evenly grinding composite powder containing tungsten and zirconium oxide, and then performing annealing treatment at 700-1000° C. to obtain powder A; and 2) grinding and then compression moulding the powder A, and then performing liquid-phase sintering to obtain a tungsten-base alloy blank so as to obtain the tungsten-base alloy material.

Abstract: The invention provides competitive inhibitors of farnesyl transferase, compositions comprising the competitive inhibitors of farnesyl transferase, and their use as antifungal agents and as agents for the prevention of the formation or growth of biofilms.

Abstract: A display panel and an electronic device. The display panel includes at least one first display substrate. The first display substrate includes a drive device layer, a first insulating layer, a first touch control layer, a light-emitting device binding layer, and a light-emitting device. The first touch control layer is provided with a number of first touch control electrodes. The first touch control electrode is electrically connected to a first touch control drive device through a first via hole penetrating the first insulating layer.

Abstract: A display panel and a display device are disclosed. The display panel includes a first substrate, a second substrate, and a liquid crystal layer disposed therebetween. The first substrate includes a first base and a planarization layer disposed on a side of the first substrate adjacent to the liquid crystal layer. A side of the planarization layer adjacent to the liquid crystal layer includes a textured structure, which includes at least one groove path. The first substrate further includes a bottom edge. An extending direction of the at least one groove path forms an included angle with the bottom edge, the included angle being greater than or equal to 45 degrees and less than or equal to 135 degrees. A liquid crystal material in the liquid crystal layer diffuses along the extending direction of the groove path through the groove path based on capillary phenomenon.

Abstract: A flat panel detector and a method performed by the flat panel detector are provided. A plurality of pixel units are arranged in an array, each pixel unit includes pixels arranged in a K×K sub-array, and each pixel is configured to provide a photoelectric signal. K is an odd number greater than 1. A gate driving circuit is configured to turn on the pixel units row by row under, so as to cause K rows of pixels in each turned-on pixel unit to generate photoelectric signals. A readout circuit is configured to read photoelectric signals from K columns of pixels in each column of pixel units, and generate image data for each pixel unit according to the photoelectric signals. A control circuit is connected to the gate driving circuit and the readout circuit.

Abstract: In one embodiment, an emergency vehicle detection system can be provided in the ADV travelling on a road to detect the presence of an emergency vehicle in a surrounding environment of the ADV using both audio data and visual data. The emergency vehicle detection system can use a trained neutral network to independently generate a detection result from the audio data, and use another trained network to independently generate another detection result from the visual data. The emergency vehicle detection system can fuse the two detection results to determine the position and moving direction of the emergency vehicle. The ADV can take appropriate actions in response to the position and moving direction of the emergency vehicle.

Abstract: A circuit simulation optimization method, device, computer device and storage medium, wherein the circuit simulation optimization method comprises: acquiring initial design parameters of a design circuit, and calculating an initial value of an S-parameter based on the initial design parameters of the design circuit; judging whether the design circuit is qualified according to design requirements according to the initial value of the S-parameter value and a preset S-parameter threshold; when the design circuit is not qualified according to the design requirements, calculating a derivative of an object function corresponding to the S-parameter at the initial design parameters; and searching for a point of a smallest possible value of the object function corresponding to the S-parameter in a preset interval of the initial design parameters according to the derivative.