Patents by Inventor Feng Xu

Feng Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12682955
    Abstract: In some examples, a peripheral circuit is configured to: when performing a first read operation on memory cells coupled to a selected word line, apply a first pass voltage to a first word line, apply a second pass voltage to a second word line, and apply a third pass voltage to a third word line, wherein the first word line comprises at least one word line physically located above and below the selected word line respectively, both the second word line and the third word line comprise word lines physically located on a side of the first word line away from the selected word line, memory cells coupled to the second word line comprise programmed memory cells, memory cells coupled to the third word line comprise unprogrammed memory cells, and the first pass voltage, the second pass voltage and the third pass voltage are all different.
    Type: Grant
    Filed: January 10, 2024
    Date of Patent: July 14, 2026
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Wei Qi, Da Li, Ya Wang, Feng Xu, Yaoyao Tian, Wenping Chen, Shuai Zhang
  • Publication number: 20260195063
    Abstract: The present disclosure provides a semiconductor device, system, and an operating method thereof. The semiconductor device includes a peripheral circuit and an array of memory cells. The array of memory cells is coupled to the peripheral circuit, and includes a storage zone and a compute-in-memory zone. The compute-in-memory zone includes a plurality of memory banks, the storage zone and any one of the memory banks includes a plurality of memory blocks. The plurality of memory banks are configured to perform a compute-in-memory operation. The plurality of memory blocks in the storage zone are configured to perform a memory operation.
    Type: Application
    Filed: July 17, 2025
    Publication date: July 9, 2026
    Inventors: Yu ZHANG, Zongliang HUO, Lei JIN, Feng XU, Da LI
  • Patent number: 12674771
    Abstract: A small volume optoelectronic chip contains an LED chip with a diamond having nitrogen-vacancy centers embedded therein. The LED chip generates light having a first wavelength, and the diamond with nitrogen-vacancy centers generates light having a second wavelength after excitement with light having the first wavelength. The diamond may also be on or adjacent the LED.
    Type: Grant
    Filed: February 11, 2022
    Date of Patent: July 7, 2026
    Assignee: VERSITECH LIMITED
    Inventors: Zhiqin Chu, Jixiang Jing, Feng Xu
  • Publication number: 20260190016
    Abstract: Example embodiments of the present disclosure relate to a method, apparatus, device, and computer-readable storage medium for communication.
    Type: Application
    Filed: December 22, 2025
    Publication date: July 2, 2026
    Applicant: Nokia Solutions and Networks Oy
    Inventors: Yu Yu LIU, Xin Wei LI, Feng XU, Min ZHANG
  • Publication number: 20260188637
    Abstract: A thermal desorption inlet ion source with separation function includes: an ionization chamber, a heating chamber, a sample inlet system, a heating system, an ionization element, a detection element, and a waste liquid. A thermal insulation pad is detachably connected to a top of the ionization chamber. The heating chamber is fixed onto a top of the thermal insulation pad. A mounting base is mounted at a bottom inside the heating chamber. A sample inlet unit is mounted on a top of the heating chamber. A sample inlet tube is fixedly connected to the mounting base. The heating system is mounted on the mounting base. The ionization element is fixed perpendicularly to a side wall of the ionization chamber, and the detection element is fixed perpendicularly to another side wall thereof. The waste liquid is disposed on a bottom of the ionization chamber.
    Type: Application
    Filed: December 19, 2025
    Publication date: July 2, 2026
    Inventors: Jiancheng Yu, Dekai Yang, Feng Xu, Chenlu Wang, Yong Wu, Wenqing Gao, Keqi Tang
  • Publication number: 20260183842
    Abstract: A laser scanning method for a powder bed fusion process, including: slicing a part to be printed to obtain a cross section to be scanned having one or more closed polygons; selecting a portion or all of at least one polygon as an area to be processed, and filling the interior of the area to be processed with fill lines, wherein all fill lines close to or connected to a boundary of a contour of the polygon are parallel to each other; and scanning and sorting the parallel fill lines f(k), so that an end point of an end of a subsequently scanned fill line close to or connected to the contour does not exceed a previously scanned fill line adjacent to the subsequently scanned fill line.
    Type: Application
    Filed: March 28, 2023
    Publication date: July 2, 2026
    Applicant: FARSOON TECHNOLOGIES CO., LTD.
    Inventors: Feng XU, Ligeng LIU, Yuhan CHEN, Ping TANG, Liang LIU
  • Patent number: 12668895
    Abstract: Provided is a yarn-out state detection method, an electronic device and a storage medium, relating to the field of computer, and in particular to the fields of detection technology, artificial intelligence technology and neural network model technology. The method includes: collecting a first image and laser reflection data of a target yarn path in a spinning box; obtaining an image feature of the target yarn path according to the first image; obtaining a laser feature of the target yarn path according to the laser reflection data; and using a yarn-out state detection model to obtain a yarn-out state of the target yarn path according to the image feature and the laser feature.
    Type: Grant
    Filed: August 16, 2024
    Date of Patent: June 30, 2026
    Assignee: ZHEJIANG HENGYI PETROCHEMICAL CO., LTD.
    Inventors: Mingyi Liu, Xiantao Peng, Peng Wang, Xuan Wu, Dake Li, Feng Xu, Jianjun Sheng
  • Patent number: 12661324
    Abstract: The invention discloses a solid dispersion, a pharmaceutical preparation, a preparation method and an application thereof. The solid dispersion of the invention comprises carriers and active constituents, which is a compound as shown in formula (I) and/or a pharmaceutically acceptable salt thereof; The carrier is “homopolymer and copolymer of N-vinyl lactam” and/or pH-dependent cellulose derivatives. The preparation of the invention comprises the solid dispersion, fillers and disintegrating agents. The solid dispersion of the invention has good dissolution and significantly improves the solubility of effective constituents. The preparation can effectively improve the bioavailability of Bcl-2 inhibitor, has good dissolution and stability, and can improve the safety of a medication.
    Type: Grant
    Filed: November 25, 2021
    Date of Patent: June 23, 2026
    Assignees: ASCENTAGE PHARMA (SUZHOU) CO., LTD., ASCENTAGE PHARMA GROUP CORP LIMITED
    Inventors: Yanqiong Lin, Hualiang Xu, Feng Xu, Chen Wu, Hongtao Guo, Xiaoling He
  • Patent number: 12664109
    Abstract: A system includes a processor in a lid portion of a computing device. The processor is communicatively coupled to a plurality of input/output (I/O) devices according to a plurality of I/O communication protocols via a first number of wires. The system includes a first memory coupled to the processor to store instructions that can be executed by the processor and cause the processor to receive, from a first I/O device of the plurality of I/O devices, a first message according to a first I/O communication protocol of the plurality of I/O communication protocols, convert the first message to a second message according to a host communication protocol, and send the second message over a bus containing a second number of wires traversing a hinge movably coupling the lid portion to a base portion of the computing device. The second number of wires is less than the first number of wires.
    Type: Grant
    Filed: December 16, 2021
    Date of Patent: June 23, 2026
    Assignee: Intel Corporation
    Inventors: Marko Bartscherer, Israel A. Cepeda Lopez, Antonio S. Cheng, Ke Han, Manjunatha Kondappa, Hongjun Li, Xinpeng Sun, Feng Xu, Xiang Ye, Qipeng Zha
  • Patent number: 12662349
    Abstract: Provided is a method of processing a yarn spindle, an electronic device and a storage medium. The method includes: after determining a target yarn box to be transferred to a temporary storage facility, selecting N candidate storage locations from a plurality of storage locations in the temporary storage facility, where the target yarn box contains a plurality of yarn spindles to be cooled, and N is a positive integer greater than or equal to 1; obtaining an actual temperature of each of the N candidate storage locations; and selecting a target storage location from the N candidate storage locations based on the actual temperature of each candidate storage location, and temporarily storing the target yarn box to the target storage location.
    Type: Grant
    Filed: January 28, 2025
    Date of Patent: June 23, 2026
    Assignees: ZHEJIANG HENGYI PETROCHEMICAL CO., LTD., HAINING HENGQI ENVIRONMENTAL PROTECTION TECHNOLOGY CO., LTD., JIAXING YIPENG CHEMICAL FIBER CO., LTD.
    Inventors: Peng Wang, Jiangang Chen, Xiantao Peng, Yibo Qiu, Dake Li, Feng Xu, Junliang Jin, Yaobin Zhang
  • Patent number: 12658361
    Abstract: The application discloses a coating material for fabricating rare earth magnets and a method using the coating material to prepare neodymium-iron-boron (NdFeB) magnets having high coercive force. The coating material includes alloy powder A and low-melting-point metal powder B. The alloy powder A is heavy rare earth element R powder, or rare earth-metal alloy (RM) powder, or rare earth-metal-hydrogen alloy (RMH) powder. The heavy rare earth elements are Dy and/or Tb, metal is Fe or Co, or an alloy of Fe and Co, and H is hydrogen element. The low-melting-point metal powder B is one or two of Zn, Al, and Ga. The preparation method includes the following steps: the coating material is mixed into a slurry, and the slurry is coated on the surface of NdFeB magnet, and then apply a two-stage diffusion heat treatment to the magnet, followed by an annealing process to obtain a high-coercivity NdFeB magnet.
    Type: Grant
    Filed: November 1, 2023
    Date of Patent: June 16, 2026
    Assignee: Ningbo Jinji Strong Magnetic Material Co., Ltd.
    Inventors: Feng Xu, Long Meng, Shimao Shen, Yuanhu Hu
  • Patent number: 12658803
    Abstract: The provided is an on-time generator circuit and a switching converter. The on-time generator circuit includes a ramp module configured to generate a ramp signal based on a drive signal of a main power transistor and an input voltage; a compensation module configured to generate a compensation signal based on the input voltage and a duty cycle; and a timing signal generation module configured to generate a timing signal based on the ramp signal, the compensation signal, and an output feedback signal. The compensation signal is used to offset delay time generated by the timing signal, making turn-on time (Ton) be preset Ton corresponding to the duty cycle, and keeping a switching frequency constant at different duty cycles.
    Type: Grant
    Filed: July 30, 2024
    Date of Patent: June 16, 2026
    Assignee: Joulwatt Technology Co., Ltd.
    Inventors: Zhuang Cao, Feng Xu
  • Publication number: 20260148778
    Abstract: The present disclosure provides a semiconductor device and an operating method thereof, and a system. The semiconductor device includes a memory cell array, word lines coupled to the memory cell array, and a peripheral circuit coupled to the word lines, wherein the peripheral circuit is configured to: perform a first program operation on a target memory cell set of a plurality of memory cell sets coupled to a selected word line, wherein the first program operation includes a plurality of first program cycles; and the target memory cell set includes a plurality of memory cells whose threshold voltages are to be programmed into a target threshold voltage distribution; and perform a second program operation on the target memory cell set, wherein the second program operation includes at least one second program cycle, the second program cycle includes a verify phase and a program phase after the verify phase.
    Type: Application
    Filed: June 13, 2025
    Publication date: May 28, 2026
    Inventors: Xinran Li, Xiangnan Zhao, Feng Xu, Wenping Chen, Yuanyuan Min, Da Li, Lei JIn, Zongliang Huo
  • Publication number: 20260148779
    Abstract: An example method of operating a memory device includes performing a program operation on a first memory cell in a first program operation phase and performing a program operation on a second memory cell and applying a program-inhibiting voltage to a first bit line coupled to the first memory cell in a second program operation phase. The first memory cell and the second memory cell are coupled to a same word line. A target threshold voltage of the first memory cell is greater than a target threshold voltage of the second memory cell. The first program operation phase precedes the second program operation phase.
    Type: Application
    Filed: August 21, 2025
    Publication date: May 28, 2026
    Applicant: Yangtze Memory Technologies Holding Co., Ltd.
    Inventors: Xinran Li, Feng Xu, Da Li, Lei Jin, Zongliang Huo
  • Publication number: 20260140633
    Abstract: According to one aspect of the present disclosure, a semiconductor device is provided. The semiconductor device may include a peripheral circuit. The semiconductor device may include a memory cell array. The peripheral circuit may be coupled to the memory cell array, the memory cell array may include a plurality of memory regions, and each memory region may include a first number of memory blocks. The peripheral circuit may be configured to receive an operation instruction. The operation instruction may include address information for determining a target memory region in the plurality of memory regions and a second number of working memory blocks in the target memory region. The second number may be less than the first number. The peripheral circuit may be configured to perform a corresponding operation on the working memory blocks in response to the operation instruction.
    Type: Application
    Filed: June 13, 2025
    Publication date: May 21, 2026
    Inventors: Yu Zhang, Feng Xu, Wendong Wang, Yuanyuan Min, Xinran Li, Da Li, Lei Jin, Zongliang Huo
  • Publication number: 20260143024
    Abstract: This disclosure provides an object download method. The method includes: A first client sends a first seed obtaining request to an object storage service on a first server; the first server sends a seed file of a target object to the first client based on the first seed obtaining request; the first client sends a first multi-source download provider obtaining request to a second server based on the seed file, where the first multi-source download provider obtaining request is used to request to provide a list of at least one client that downloads the target object; the second server sends a first multi-source download provider list to the first client based on the first multi-source download provider obtaining request; and the first client receives a first part of the target object from the first server, and receives a second part of the target object from the second client.
    Type: Application
    Filed: January 15, 2026
    Publication date: May 21, 2026
    Applicant: Huawei Cloud Computing Technologies Co., Ltd.
    Inventors: Ruohang Xu, Pingchang Bai, Feng Xu
  • Publication number: 20260131093
    Abstract: The present invention provides a portable ventilator suitable for cardiopulmonary resuscitation (CPR) and a control method thereof. According to the present invention, the number of external chest compressions in a CPR process can be automatically recognized on the basis of reverse airflow, and a compression period and a relaxation period can be determined. The portable ventilator has an automatic 30:2 ventilation mode suitable for non-intubated patients and a variable-volume ventilation mode suitable for patients with advanced airways. The present invention can improve the efficiency of first aid and avoid barotrauma, is suitable for the first aid during CPR, and can achieve precise flow control.
    Type: Application
    Filed: June 26, 2024
    Publication date: May 14, 2026
    Inventors: Ke LI, Bozhi DING, Yuguo CHEN, Feng XU, Jiali WANG, Chang PAN, Jiaojiao PANG, Yuan BIAN, Yibin LI
  • Publication number: 20260133920
    Abstract: Methods, systems, and devices for dynamically adjusting data read size are described. A memory system controller may be configured to dynamically adjust a size of data transmitted to a host system based on determining a quantity of data requested by the host system. The memory system controller may support receiving a read command of a first data size, incrementing a counter by the first data size, requesting the data from a memory device according to a second data size, and transmitting the data from the memory device according to a third data size based on the counter. The memory system controller may determine the counter does not satisfy a threshold and configure the third data size as a relatively small quantity of data. However, the memory system controller may determine the counter satisfies the threshold and configure the third data size as a relatively large quantity of data.
    Type: Application
    Filed: November 12, 2025
    Publication date: May 14, 2026
    Inventors: Wenjun Wu, Feng Xu
  • Publication number: 20260128105
    Abstract: An example semiconductor device includes memory banks and a peripheral circuit. The peripheral circuit is configured to provide a first voltage to the bit line and sense a current on the bit line during a first read stage of a first memory bank and provide a second voltage to the bit line and sense a current on the bit line during a second read stage of a second memory bank. The first memory bank and the second memory bank are arranged along a direction from a first end of the bit line pointing to a second end of the bit line. The first end includes a node where the bit line is coupled to a page buffer or a bit line driver, The second voltage is greater than the first voltage, and/or a sense duration of the second read stage is greater than that of the first read stage.
    Type: Application
    Filed: September 24, 2025
    Publication date: May 7, 2026
    Inventors: Yuanyuan MIN, Wendong WANG, Feng XU, Lei JIN, Zongliang HUO, Jianquan JIA
  • Patent number: 12613551
    Abstract: An electronic device includes: a battery, a mainboard, and a housing. The battery is connected to the mainboard, the mainboard is provided with a first controller, the battery and the mainboard are installed in a cavity of the housing, and the housing includes a rear cover. The rear cover includes an electrochromic layer, the electrochromic layer is connected to the mainboard, the first controller is configured to control whether to power on the electrochromic layer, and a color displayed on the electrochromic layer when the electrochromic layer is powered on is different from a color displayed when the electrochromic layer is not powered on. The rear cover can change, by controlling a power-on and power-off status of the electrochromic layer, a color displayed on the electrochromic layer, and further change a color displayed on the rear cover, without changing a decorative film.
    Type: Grant
    Filed: July 13, 2021
    Date of Patent: April 28, 2026
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Yisong He, Weisi Li, Feng Xu, Guoping Wu, Bin Xie, Jianguo Xu