Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: A process includes accessing a first message that is sent from an access point device. The first message includes data representing a second message that is sent by a client device. The second message is part of an exchange of messages between the client device and the access point device associated with authentication of the client device and a derivation of a first key used to encrypt and decrypt data communicated between the client device and the access point device. The second message includes a first message integrity check value. The process includes identifying, based on the second message, a pre-shared key corresponding to the client device.

Abstract: A method for detecting and compensating CNC tools being implemented in an electronic device, receives from a detector first parameters and second parameters in respect of a first tool. Such first parameters include at least one of service life, blade break information, and blade chipping information of the first tool, and such second parameters include at least one of length extension information, length wear information, radial wear information, and blade thickness wear information of the first tool. Based on the first parameters, instructions to process the workpiece are transmitted or not. Upon receiving the second parameters, instructions to adjust operation of the first tool are transmitted, to compensate for deterioration in normal use.

Abstract: A building photovoltaic data interpolation method based on WGAN and whale optimization algorithm is provided, which includes: obtaining historical building roof photovoltaic output data, perform preprocessing on the historical building roof photovoltaic output data, and uses CNN to build a GAN; describing missing value position of preprocessed data by using a binary mask matrix, and setting Wasserstein distance to define a loss function of a GAN generator and a discriminator; taking the loss function as a fitness function, optimizing an input to the GAN generator through a whale optimization algorithm and obtaining optimized candidate samples; fusing the optimized candidate samples and a photovoltaic data processed by the binary mask matrix to obtain completed reconstructed samples, so as to improve the complementary accuracy, optimize the random noise, remove the unfavorable influencing components, and provide services for building rooftop PV data interpolation more accurately.

Abstract: A set of primers and probes for simultaneous detection of Cymbidium mosaic virus (CymMV), Odontoglossum ringspot virus (ORSV), and Cymbidium ringspot virus (CymRSV) and a method for detecting CymMV, ORSV, and CymRSV, along with a method for their detection, are disclosed. The method involves designing multiplex real-time quantitative PCR detection primers and probes for CymMV, ORSV, and CymRSV and applying these primers and probes to the real-time quantitative PCR simultaneous detection of CymMV, ORSV, and CymRSV. It allows for faster detection of CymMV, ORSV, and CymRSV, taking only one-third of the time compared to uniplex real-time quantitative PCR technology, thereby reducing testing costs by approximately ? to ½ for each sample. The primers and probes are highly specific and sensitive, with a sensitivity as low as 1 to 10 copies. It provides an efficient and feasible detection method for early detection and prevention of CymMV, ORSV, and CymRSV.

Abstract: The present invention relates to an ultra-high molecular weight polyethylene and a process for preparing the same, said ultra-high molecular weight polyethylene has a viscosity-average molecular weight of 150-1000×104 g/mol, a metal element content of 0-50 ppm, a bulk density of 0.30-0.55 g/cm3, a true density of 0.900-0.940 g/cm3, a melting point of 140-152° C., and a crystallinity of 40-75%, and said polyethylene satisfies at least one of condition (1) and condition (2): Condition (1): tensile elasticity modulus is greater than 250 MPa, preferably greater than 280 MPa, more preferably greater than 300 MPa, Condition (2): Young's modulus is greater than 300 MPa, preferably greater than 350 MPa. The ultra-high molecular weight polyethylene has high mechanical properties, high melting point, low metal element content and ash content, and the preparation process is simple, flexible and adjustable, and the ultra-high molecular weight ethylene copolymer has a high tensile elasticity module.

Abstract: A thermally conductive board includes a first metal layer, a second metal layer, and a thermally conductive layer. The material of the first metal layer includes copper, and the first metal layer has a first top surface and a first bottom surface opposite to the first top surface. A first metal coating layer covers the first bottom surface. The material of the second metal layer includes copper, and the second metal layer has a second top surface and a second bottom surface opposite to the second top surface. A second metal coating layer covers the second top surface and faces the first metal coating layer. The thermally conductive layer is an electrically insulator laminated between the first metal coating layer and the second metal coating layer.

Abstract: A laterally diffused metal oxide semiconductor device and a preparation method thereof are disclosed. The semiconductor device includes: a substrate; a body region having a first conductivity type and formed in the substrate; a drift region, having a second conductivity type, formed in the substrate and adjacent to the body region; a field plate structure, formed on the drift region, a lower surface of an end of the field plate structure close to the body region being flush with the upper surface of the substrate, and the end of the field plate structure close to the body region also having an upwardly extending inclined surface; and a drain region, having a second conductivity type, formed in an upper layer of the drift region, and in contact with the end of the field plate structure away from the body region.

Abstract: The present disclosure provides a reference image encoding method, including: encoding sequence, to obtain a reconstructed image of a first and second reference images; determining whether a local area in the second reference image is suitable for updating first reference image; determining whether the first reference image is updated; when the first reference image is not updated, and it is determined the second reference image is suitable for updating the first reference image, replacing a pixel value of a corresponding area or a related area in the first reference image with a pixel value of the local area in the second reference image; and compiling, into the bitstream.

Abstract: Disclosed are a thin film transistor structure, a display panel and a display device. The thin film transistor structure includes a base, a source electrode, a drain electrode configured to connect to a pixel electrode and a grid electrode. The source electrode, the drain electrode and the grid electrode are provided on the base. and a channel is formed between the source electrode and the drain electrode. The thin film transistor structure further includes an insulating layer and a slow-release electrode. The insulating layer is provided on a side of the source electrode and the drain electrode, and filled in the channel. The slow-release electrode is provided in the insulating layer. At least a part of the slow-release electrode is provided inside the channel.

Abstract: An antenna rotation structure includes a rotating shaft member rotatably disposed through a perforated groove of a housing, an annular member, and an elastic member. The rotating shaft member has a holding portion located in an accommodating space of the housing, a connecting portion connected to the holding portion and with an annular groove, and a gripping portion with one end connected to the connecting portion and the other end protruded from the housing. The annular member is disposed in the annular groove and abuts the perforated groove. The elastic member is sleeved on the one end of the gripping portion. The connecting portion and the one end of the gripping portion are disposed in the perforated groove. The gripping portion is turned to drive the rotating shaft member to rotate, thereby adjusting an angle of the antenna.

Abstract: A double-sided aspheric diffractive multifocal lens and methods of manufacturing and design of such lenses in the field of ophthalmology. The lens can include an optic comprising an aspheric anterior surface and an aspheric posterior surface. On one of the two surfaces a plurality of concentric diffractive multifocal zones can be designed. The other surface can include a toric component. The double-sided aspheric surface design results in improvement of the modulation transfer function (MTF) of the lens-eye combination by aberration reduction and vision contrast enhancement as compared to one-sided aspheric lens. The surface having a plurality of concentric diffractive multifocal zones produces a near focus, an intermediate focus, and a distance focus.

Abstract: A shift-register unit, a grid driving circuit and a displaying device, which relates to the technical field of displaying. In the present disclosure, the oxide-semiconductor layers of the oxide thin-film transistors may be delimited into regions according to the total channel widths and the channel lengths required by the oxide thin-film transistors in the shift-register unit, wherein the sum of the widths of the independent semiconductor branches obtained by the delimitation is equal to the required total channel width. Accordingly, one oxide thin-film transistor can realize the required total channel width by using the one or more semiconductor branches, to ensure the normal operation of the oxide thin-film transistor, whereby the oxide-semiconductor layers of the different oxide thin-film transistors can be configured differently, to realize the purpose of reducing the border frame of the displaying device.

Abstract: This application relates to the field of lighting, and discloses an LED filament. The LED filament includes an LED chip unit, a light conversion layer, and an electrode. The light conversion layer covers the LED chip unit and part of the electrode, and a color of a light emitted by the LED filament after lighting is different from a color of the light conversion layer. This application has the characteristics of uniform light emission and good heat dissipation effect.

Abstract: Embodiments are generally directed to an adaptive deformable kernel prediction network for image de-noising. An embodiment of a method for de-noising an image by a convolutional neural network implemented on a compute engine, the image including a plurality of pixels, the method comprising: for each of the plurality of pixels of the image, generating a convolutional kernel having a plurality of kernel values for the pixel; generating a plurality of offsets for the pixel respectively corresponding to the plurality of kernel values, each of the plurality of offsets to indicate a deviation from a pixel position of the pixel; determining a plurality of deviated pixel positions based on the pixel position of the pixel and the plurality of offsets; and filtering the pixel with the convolutional kernel and pixel values of the plurality of deviated pixel positions to obtain a de-noised pixel.

Abstract: The present disclosure provides a cobalt-free and nickel-free positive electrode material and a preparation method therefor, and a battery. The preparation method includes: preparing a cobalt-free and nickel-free matrix material, and mixing the cobalt-free and nickel-free matrix material, a lithium source, and a divalent manganese compound for reaction to obtain the cobalt-free and nickel-free positive electrode material. By adding the divalent manganese compound, the generation of lamellar LiMnO2 and spinel LiMn2O4 is inhibited, the generation of lamellar Li2MnO3 is promoted, and the cycle performance of the material is improved.

Abstract: The present invention relates to an ethylene polymer and a process for preparing the same, wherein the ethylene polymer has an average particle size of 50-3000 ?m, a bulk density of 0.28-0.55 g/cm3, a true density of 0.930-0.980 g/cm3, a melt index at a load of 2.16 Kg at 190° C. of 0.01-2500 g/10 min, a crystallinity of 30-90%, a melting point of 105-147° C., a comonomer molar insertion rate of 0.01-5 mol %, a weight-average molecular weight of 2×104 g/mol-40×104 g/mol, and a molecular weight distribution of 1.8-10. In the preparation process, raw materials containing ethylene, hydrogen gas and a comonomer are subjected to a tank-type slurry polymerization with an alkane solvent having a boiling point of 5-55° C. or a mixed alkane solvent having a saturated vapor pressure of 20-150 KPa at 20° C. as the polymerization solvent in the presence of a polyethylene catalytic system, at the molar ratio of hydrogen gas to ethylene of 0.01-20:1, preferably 0.

Abstract: Disclosed are compounds inhibiting the conversion of ?-KG to D-2-HG, pharmaceutically acceptable salts, hydrates, solvates or stereoisomers thereof and pharmaceutical compositions comprising the compounds. The compound and the pharmaceutical composition can effectively treat IDH associated diseases, including cancer.

Abstract: The technology employs a patch-based multi-scale Transformer (300) that is usable with various imaging applications. This avoids constraints on image fixed input size and predicts the quality effectively on a native resolution image. A native resolution image (304) is transformed into a multi-scale representation (302), enabling the Transformer's self-attention mechanism to capture information on both fine-grained detailed patches and coarse-grained global patches. Spatial embedding (316) is employed to map patch positions to a fixed grid, in which patch locations at each scale are hashed to the same grid. A separate scale embedding (318) is employed to distinguish patches coming from different scales in the multiscale representation. Self-attention (508) is performed to create a final image representation. In some instances, prior to performing self-attention, the system may prepend a learnable classification token (322) to the set of input tokens.

Abstract: The present specification discloses video matching. In a computer-implemented method, a plurality of feature vectors of a target video is obtained. A candidate video similar to the target video is retrieved from a video database based on the plurality of feature vectors of the target video. A time domain similarity matrix feature map is constructed between the target video and the candidate video based on the target video and the candidate video. Using the time domain similarity matrix feature map as an input into a deep learning detection model, a video segment matching the target video in the candidate video and a corresponding similarity is output.