Abstract: Semiconductor structures and method of forming the same are provided. A method according to the present disclosure includes providing an intermediate structure that includes an opening, conformally depositing a metal liner over the opening, depositing a dummy fill material over the metal liner, recessing the dummy fill material such that a portion of the metal liner is exposed, removing the exposed portion of the metal liner, removing the recessed dummy fill material, and after the removing of the recessed dummy fill material, depositing a metal fill layer over the opening.

Abstract: A zinc-based coating steel plate includes a base plate layer, an oxide layer which is adjoined to the base plate layer, and a zinc-based coating which is adjoined to the oxide layer, the oxide layer including a grain boundary silicon oxide and/or an intracrystalline silicon oxide therein, a thickness of the oxide layer being 3 ?m to 10 ?m, and a mass fraction of the grain boundary silicon oxide in the oxide layer being greater than or equal to 4%.

Abstract: The present disclosure provides an integrated circuit (IC) structure in accordance with some embodiments. The IC structure includes a circuit structure having semiconductor devices formed on a first substrate, an interconnect structure over the semiconductor devices; and a thermal dissipation structure formed on a second substrate. The second substrate is boned to the circuit structure such that the thermal dissipation structure is interposed between the first and second substrates. The thermal dissipation structure includes a diamond-like carbon (DLC) layer. The DLC layer includes a bottom portion having large grain sizes and a top portion having fine DLC grain sizes.

Abstract: A bioculture meat device includes a culture medium conditioning tank (1), a cell proliferation tank (2), a muscle separating tank (3), a compression forming device (4), and a control system. The control system is divided into a culture medium regulation and control system (51) for controlling the culture medium conditioning tank (1), a cell proliferation control system (52) for controlling the cell proliferation tank (2), and a muscle collecting and shaping control system (53) for controlling the muscle separating tank (3) and the compression forming device (4). Different from traditional manual production, the device controls a culture environment through automatic equipment, realizes automatic integration from culturing to processing a finished product, improves the production capacity, and reduces the cost.

Abstract: A method includes forming a first de-bond structure over a first substrate, where forming the first de-bond structure includes depositing a first de-bond layer over the first substrate, depositing a first silicon layer over the first de-bond layer, depositing a second de-bond layer over the first silicon layer, and depositing a second silicon layer over the second de-bond layer, epitaxially growing a first multi-layer stack over the first de-bond structure, bonding the first multi-layer stack to a second multi-layer stack, and performing a first laser annealing process to ablate the first silicon layer and portions of the first de-bond layer and the second de-bond layer in order to de-bond the first substrate from the first multi-layer stack.

Abstract: The present disclosure relates to an integrated circuit (IC) structure. The IC structure includes a semiconductor device having a frontside and a backside opposite the frontside. A first interconnect structure disposed on the frontside of the semiconductor device. The first interconnect structure comprises a first dielectric structure having a plurality of inter-level dielectric (ILD) layers. A second dielectric structure disposed on the backside of the semiconductor device. The second dielectric structure comprises a first high thermal conductivity layer having a thermal conductivity greater than that of the ILD layers.

Abstract: The technology employs a patch-based multi-scale Transformer (300) that is usable with various imaging applications. This avoids constraints on image fixed input size and predicts the quality effectively on a native resolution image. A native resolution image (304) is transformed into a multi-scale representation (302), enabling the Transformer's self-attention mechanism to capture information on both fine-grained detailed patches and coarse-grained global patches. Spatial embedding (316) is employed to map patch positions to a fixed grid, in which patch locations at each scale are hashed to the same grid. A separate scale embedding (318) is employed to distinguish patches coming from different scales in the multiscale representation. Self-attention (508) is performed to create a final image representation. In some instances, prior to performing self-attention, the system may prepend a learnable classification token (322) to the set of input tokens.

Abstract: Systems, devices, methods, and computer readable medium for evaluating visual quality of digital content are disclosed. Methods can include training machine learning models on images. A request is received to evaluate quality of an image included in a current version of a digital component generated by the computing device. The machine learning models are deployed on the image to generate a score for each quality characteristic of the image. A weight is assigned to each score to generate weighted scores. The weighted scores are combined to generate a combined score for the image. The combined score is compared to one or more thresholds to generate a quality of the image.

Abstract: A semiconductor structure including a first die, a second die stacked on the first die, a smoothing layer disposed on the first die and a filling material layer disposed on the smoothing layer. The second die has a dielectric portion and a semiconductor material portion disposed on the dielectric portion. The smoothing layer includes a first dielectric layer and a second dielectric layer, and the second dielectric layer is disposed on the first dielectric layer. The dielectric portion is surrounded by the smoothing layer, and the semiconductor material portion is surrounded by the filling material layer. A material of the first dielectric layer is different from a material of the second dielectric layer and a material of the filling material layer.

Abstract: A method includes forming a bonding structure that contains thermal conductive vias (also termed as thermal vias, thermal conductive pillars, or thermal pillars) on a semiconductor structure. The thermal vias, with material thermal conductivity greater than about 10 W/m·K, are embedded in the bonding structure that provides a quick dissipation path of heat from thermal hotspot regions into a substrate.

Abstract: One example method includes receiving, by an artificial intelligence (AI) system, a query; generating, by the AI system and based on the query, a plurality of candidate digital components using a machine learning model; obtaining, by the AI system, user feedback associated with the plurality of candidate digital components, each user feedback indicating a user preference level of a corresponding candidate digital component; obtaining, by the AI system, performance data indicating an acceptance level of each candidate digital component of the plurality of candidate digital components; identifying, by the AI system and based on the user feedback and the performance data, a candidate digital component of the plurality of candidate digital components; generating, by the AI system and based on the candidate digital component, training data; and refining, by the AI system, the machine learning model using the training data.

Abstract: A connecting device that includes a first rotating shaft, a second rotating shaft, and an adjustment assembly. The first rotating shaft is used to connect with a first body. The second rotating shaft is parallel to the first rotating shaft and is used to connect with a second body. The adjustment assembly is rotatably matched with the second rotating shaft. A rotation angle of the second rotating shaft relative to the first rotating shaft changes to cause a target object of the adjustment assembly to move relative to the second rotating shaft, the target object reciprocating along a first direction to change a target distance with the second rotating shaft. The first direction and an axial direction of the second rotating shaft form an angle.

Abstract: A method of forming a semiconductor device includes depositing a target metal layer in an opening. Depositing the target metal layer comprises performing a plurality of deposition cycles. An initial deposition cycle of the plurality of deposition cycles comprises: flowing a first precursor in the opening, flowing a second precursor in the opening after flowing the first precursor, and flowing a reactant in the opening. The first precursor attaches to upper surfaces in the opening, and the second precursor attaches to remaining surfaces in the opening. The first precursor does not react with the second precursor, and the reactant reacts with the second precursor at a greater rate than the reactant reacts with the first precursor.

Abstract: A computer-implemented method that provides watermark-based image reconstruction to compensate for lossy encoding schemes. The method can generate a difference image describing the data loss associated with encoding an image using a lossy encoding scheme. The difference image can be encoded as a message and embedded in the encoded image using a watermark and later extracted from the encoded image. The difference image can be added to the encoded image to reconstruct the original image. As an example, an input image encoded using a lossy JPEG compression scheme can be embedded with the lost data and later reconstructed, using the embedded data, to a fidelity level that is identical or substantially similar to the original.

Abstract: Provided are machine learning systems and models featuring resolution-flexible multi-axis attention blocks. In particular, the present disclosure provides example multi-axis MLP based architectures (example implementations of which can be generally referred to as MAXIM) that can serve as an efficient and flexible general-purpose vision backbone for image processing tasks. In some implementations, MAXIM can use a UNet-shaped hierarchical structure and supports long-range interactions enabled by spatially-gated MLPs. Specifically, some example implementations of MAXIM can contain two MLP-based building blocks: a multi-axis gated MLP that allows for efficient and scalable spatial mixing of local and global visual cues, and a cross-gating block, an alternative to cross-attention, which accounts for cross-feature mutual conditioning.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an interconnect structure disposed over a semiconductor substrate, contact pads disposed on the interconnect structure, a dielectric structure disposed on the interconnect structure and covering the contact pads, bonding connectors covered by the dielectric structure and landing on the contact pads, and a dummy feature covered by the dielectric structure and laterally interposed between adjacent two of the bonding connectors. Top surfaces of the bonding connectors are substantially coplanar with a top surface of the dielectric structure, and the bonding connectors are electrically coupled to the interconnect structure through the contact pads.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for jointly training an encoder that generates a watermark and a decoder that decodes a data item encoded within the watermark. The training comprises obtaining a plurality of training images and data items. For each training image, a first watermark is generated using an encoder and a subsequent second watermark is generated by tiling two or more first watermarks. The training image is watermarked using the second watermark to generate a first error value and distortions are added to the watermarked image. A distortion detector predicts the distortions based on which the distorted image is modified. The modified image is decoded by the decoder to generate a predicted data item and a second error value. The training parameters of the encoder and decoder are adjusted based on the first and the second error value.

Abstract: A trained model is retrained for video quality assessment and used to identify sets of adaptive compression parameters for transcoding user generated video content. Using transfer learning, the model, which is initially trained for image object detection, is retrained for technical content assessment and then again retrained for video quality assessment. The model is then deployed into a transcoding pipeline and used for transcoding an input video stream of user generated content. The transcoding pipeline may be structured in one of several ways. In one example, a secondary pathway for video content analysis using the model is introduced into the pipeline, which does not interfere with the ultimate output of the transcoding should there be a network or other issue. In another example, the model is introduced as a library within the existing pipeline, which would maintain a single pathway, but ultimately is not expected to introduce significant latency.

Abstract: A method of fabricating a semiconductor chip includes the following steps. A bonding material layer is formed on a first wafer substrate and is patterned to form a first bonding layer having a strength adjustment pattern. A semiconductor component layer and a first interconnect structure layer are formed on a second wafer substrate. The first interconnect structure layer is located. A second bonding layer is formed on the first interconnect structure layer. The second wafer substrate is bonded to the first wafer substrate by contacting the second bonding layer with the first bonding layer. A bonding interface of the second bonding layer and the first bonding layer is smaller than an area of the second bonding layer. A second interconnect structure layer is formed on the semiconductor component layer. A conductor terminal is formed on the second interconnect structure layer.

Abstract: A plating apparatus includes a workpiece holder, a plating bath, and a clamp ring. The plating bath is underneath the workpiece holder. The clamp ring is connected to the workpiece holder. The clamp ring includes channels communicating an inner surface of the clamp ring and an outer surface of the clamp ring.