Abstract: Disclosed is a fast self-adaptive rotary plug-in underwater force-bearing connector, which comprises a plug part and a socket part, wherein the plug part comprises a plug housing, a pin arranged in the plug housing, and a push-pull sleeve, a rotary sleeve, a front retaining ring, a ratchet lock nut and a rear retaining ring arranged outside the plug housing; the socket part comprises a socket housing and a jack arranged in the socket housing; the pin and the jack cooperate to connect the plug part and the socket part. The fast self-adaptive rotary plug-in underwater force-bearing connector of the present application can work under the working condition of a large tensile force and has a high reliability.

Abstract: The present invention is directed to compositions having chair-side handling properties comprising polymers for dental, soft tissue and combination products applications.

Abstract: Systems and methods for rapid diagnostics related to the use of combinations of CRISPR effector systems with optimized guide sequences, OSD probes, RNA probes and/or RNase H for detection of nucleic acid sequences, such as sequences from coronavirus, as well as multiplex lateral flow diagnostic devices and methods of use, are provided.

Abstract: An encryption method includes: receiving cipher data which is binary data; determining target components in a resistive memory array according to values of respective bits in the cipher data; determining current values generated by respective columns of components according to the target components; and generating key data according to the current values generated by the respective columns of components. The present disclosure can effectively reduce computing power and power consumption of an encryption process in an edge device.

Abstract: A high-magnetic-induction low-iron-loss non-oriented silicon steel sheet and a manufacturing method therefor. The chemical composition by mass percentages is: C?0.005%, Si: 0.1%-1.6%, Mn: 0.1%-0.5%, P?0.2%, S?0.004%, Al?0.003%, N?0.005%, Nb?0.004%, V?0.004% and Ti?0.003%, with the balance being Fe and inevitable impurities; and at the same time satisfies: 120?[Mn]/[S]?160, and [Nb]/93+[V]/51+[Ti]/48+[Al]/27?[C]/12+[N]/14. After casting, the cooling rate in a cool-down process of casting slab is controlled, and a temperature controlling method is used to adjust the charging temperature of casting slab.

Abstract: Systems and methods for targeted gene modification, targeted insertion, perturbation of gene transcripts, and nucleic acid editing. Novel nucleic acid targeting systems comprise components of CRISPR systems and transposable elements.

Abstract: An IC device may include an array of transistors. The transistors may have separate gate electrodes. A gate electrode may include polysilicon. The gate electrodes may be separated from each other by one or more electrical insulators. The separated gate electrodes have shorter lengths, compared with connected gate electrodes, which can optimize the performance of the IC device due to local layout effect. Also, the IC device may include conductive structures crossing the support structures of multiple transistors. Such conductive structures may cause strain in the IC device, which can boost the local layout effect. The conductive structures may be insulated from a power plane. Alternatively or additionally, the IC device may include dielectric structures, which may be formed by removing gate electrodes in some of the transistors and providing a dielectric material into the openings. The presence of the dielectric structures can further boost the local layout effect.

Abstract: An IC device may have layout with reduced N-P boundary effect. The IC device may include two rows of transistors. The first row may include one or more P-type transistors. The second row may include N-type transistors. The gate electrode of a P-type transistor may include different conductive materials from the gate electrode of a N-type transistor. Each P-type transistor in the first row may be over a N-type transistor in the second row and contact the N-type transistor in the second row. For instance, the gate of the P-type transistor may contact the gate of the N-type transistor. Vacancy diffusion may occur at the boundary of the P-type transistor and the N-type transistor, causing N-P boundary effect. At least one or more other N-type transistors in the second row do not contact any P-type transistor, which can mitigate the N-P boundary effect in the IC device.

Abstract: Described herein are nanoribbon-based transistor devices in which the nanoribbons have rounded cross-sections. The nanoribbons may include caps or outer layers of semiconductor channel material grown over an inner layer of semiconductor channel material. Different materials may be used for the outer layers of NMOS and PMOS transistors. In one example, an integrated circuit device includes NMOS transistors formed from or more nanoribbons with rounded cross-sections and an outer layer of silicon, and a PMOS transistors formed from or more nanoribbons with rounded cross-sections and an outer layer of silicon germanium.

Abstract: Described herein are integrated circuit devices that include both nanoribbon-based transistors and fin-shaped transistors. The nanoribbon transistors may have shorter channel lengths than the fin transistors. In addition, the nanoribbon transistors may have thinner gate dielectrics than the fin transistors.

Abstract: The subject matter disclosed herein is generally directed to methods of differentiating pluripotent cells into target cell types and screening platforms for systematically identifying transcription factors (TFs) that drive differentiation of pluripotent cells into target cell types. Also disclosed is a high-throughput multiplex screening platform. Also disclosed are in vitro models for neural progenitor cells and cardiomyocytes.

Abstract: An electronic device includes a shell, a button member, a sleeve member, a waterproof ring, and a circuit board. The shell is made of a metal material, and the shell includes a mounting hole. The button member is made of a metal material, the button member includes a cap and a shaft body, the cap is located on an outer side of the shell, the shaft body passes through the mounting hole, and the shaft body includes a first end and a second end. The sleeve member is made of a heat shrinkable plastic material, and the sleeve member wraps the shaft body tightly. The waterproof ring is sleeved on the shaft body. The circuit board is disposed inside the shell, and the second end of the shaft body is movably in contact with or away from the circuit board.

Abstract: An aluminum alloy comprising aluminum, copper, cerium, and one or more of manganese and zirconium. The aluminum alloy comprises a copper:cerium ratio of about 2.0:1.0. Related methods of forming articles comprising the aluminum alloy and articles comprising the aluminum alloy are also disclosed.

Abstract: The present application relates to an interferogram phase estimation method. The interferogram phase estimation method includes: obtaining an interferogram for estimation of a measured object; and inputting the interferogram for estimation to a neural network model trained based on a method for training a neural network model for interferogram phase estimation, to obtain a phase image corresponding to the interferogram for estimation. In the interferogram phase estimation method of the present application, features of different scales of an interferogram are learned based on a Unet++ neural network model to obtain an accurately estimated phase image corresponding to the interferogram.

Abstract: The invention provides a micro-interface enhanced oxidation system and an oxidation method for preparing hydrogen peroxide, wherein the micro-interface enhanced oxidation system includes: an oxidation reactor, wherein a top portion of a side surface is provided with a liquid phase pipeline for delivering hydrogenated anthraquinone, and a bottom portion of the side surface is provided with a gas phase pipeline for delivering air; and a liquid distributor, a packing section, a seal pan and a hybrid micro-interface unit that are arranged in order from top to bottom are arranged in the oxidation reactor, wherein the hybrid micro-interface unit comprises a upper-mounted micro-interface generator and a lower-mounted micro-interface generator that are communicated with each other up and down, and the hydrogenated anthraquinone delivered in goes down in turn until being mixed with the air in the hybrid micro-interfacial unit to be dispersed and crushed after being distributed through the liquid distributor.

Abstract: The invention provides for systems, methods, and compositions for targeting nucleic acids. In particular, the invention provides non-naturally occurring or engineered DNA-targeting systems comprising a novel DNA-targeting CRISPR effector protein and at least one targeting nucleic acid component like a guide RNA Methods for making and using and uses of such systems, methods, and compositions and products from such methods and uses are also disclosed and claimed.

Abstract: A mixing apparatus includes: a driving device configured to drive first liquid to flow into first transfer chamber and to drive second liquid to flow into second transfer chamber, a first transfer chamber configured to store inflowed first liquid, and a second transfer chamber configured to store inflowed second liquid; a premixing chamber communicating with liquid outlet of first transfer chamber and liquid outlet of second transfer chamber; and a monitor configured to monitor volume of liquid in first transfer chamber and volume of liquid in second transfer chamber, close liquid inlet of first transfer chamber and control first liquid to flow into premixing chamber when volume of first liquid is equal to first value, and close liquid inlet of second transfer chamber and control second liquid to flow into premixing chamber when volume of second liquid is equal to second value.

Abstract: An IC device includes a backside FTI separating a first transistor from a second transistor. The FTI may be between a source region of the first transistor and a drain region of the second transistor. The source region of the first transistor and the drain region of the second transistor may be different portions of a semiconductor structure, e.g., a fin or nanoribbon. The IC device may also include a frontside metal layer. The semiconductor structure may have a first surface and a second surface opposing the first surface. The first surface of the semiconductor structure may be closer to the metal layer and larger than the second surface of the semiconductor structure. The FTI may have a first surface and a second surface opposing the first surface. The first surface of the FTI may be closer to the metal layer but smaller than the second surface of the FTI.

Abstract: Fabrication method for nanoribbon-based transistors and associated transistor arrangements, IC structures, and devices are disclosed. An example fabrication method is based on patterning a foundation over which a superlattice is provided so that a single superlattice may be used to form both PMOS and NMOS stacks of nanoribbons. An example IC structure includes a support, an NMOS stack of nanoribbons stacked vertically above one another over the support, and a PMOS stack of nanoribbons stacked vertically above one another over the support, wherein at least one of the nanoribbons of the NMOS stack is vertically offset with respect to at least one of the nanoribbons of the PMOS stack.