Abstract: Disclosed are an organic electroluminescence display panel, a manufacturing method therefor, and a display device. The organic electroluminescence display panel comprises an array substrate and an opposite substrate which are disposed opposite to each other; the opposite substrate comprises a first base substrate and multiple spacers located on the first base substrate, and the array substrate comprises a second base substrate, multiple sub pixels located on the second base substrate, a pixel defining layer for defining regions of the sub pixels, and elastomers located on the pixel defining layer and having one-to-one correspondence to at least part of the spacers in terms of position; the elastomers are compressed by the corresponding spacers during cell aligning to buffer the pressure applied to the array substrate.

Abstract: The present disclosure provides a substrate comprising a printing area, wherein the printing area comprises a flat surface and a plurality of separation structures projecting from the flat surface, wherein the plurality of separation structures divide the printing area into a plurality of micro-areas, and in each of the micro-areas, a circular region containing no separation structure has a maximum diameter between 5 ?m and 10 ?m. The present disclosure further provides a light emitting device comprising the substrate and a method for manufacturing the substrate.

Abstract: The present disclosure provides an array substrate, an electroluminescent panel and a display device, to solve the problems of more manufacturing processes and complex structures of the large-sized OLED display panel in the related art. The array substrate includes: a substrate, a plurality of light sensors on the substrate, a flat layer on the light sensor, and a connected electrode layer on the flat layer, wherein each of the light sensors includes a first electrode, a photosensitive layer and a second electrode arranged in sequence on the substrate; wherein the connected electrode layer is connected with the second electrode through a via hole penetrating through the flat layer.

Abstract: A substantially transparent display substrate is provided. The substantially transparent display substrate includes a base substrate; multiple insulating layers on the base substrate and in a display area of the substantially transparent display substrate; and a plurality of grooves in at least a first insulating layer of the multiple insulating layers, wherein at least one of the plurality of grooves at least partially extending into the first insulating layer. The display area includes a plurality of subpixel regions spaced apart from each other by an inter-subpixel region. A respective one of the plurality of subpixel regions includes a light emitting sub-region and a substantially transparent sub-region. At least a portion of a respective one of the plurality of grooves is about an edge of the substantially transparent sub-region of the respective one of the plurality of subpixel regions.

Abstract: A manufacturing method of OLED microcavity structure is provided. The manufacturing method includes: forming a reflective anode on a substrate; forming a transparent conductive film layer having a thickness corresponding to a required pixel on the reflective anode; patterning the transparent conductive film layer and the reflective anode with a pixel mask corresponding to the required pixel to form a pattern of the required pixel; and repeating the above steps on a resultant structure surface according to display requirements until a pixel display structure required by a display device is obtained.

Abstract: A display cover plate, a manufacturing method therefor and a display device are provided, The display cover plate includes: a substrate; and an electrochromic unit on the substrate, the electrochromic unit includes: a first electrode on the substrate; an electrochromic layer on a side of the first electrode away from the substrate; and a second electrode on a side of the electrochromic layer away from the substrate, wherein the first electrode and the second electrode are configured to generate an electric field, and the electrochromic layer allows light of different colors to pass through based on a change of the electric field.

Abstract: The present application discloses an organic light emitting diode display substrate having a subpixel region and an inter-subpixel region. The organic light emitting diode display substrate includes a base substrate and an auxiliary cathode on the base substrate. The auxiliary cathode includes a transparent conductive sub-layer and a metallic conductive sub-layer on a side of the transparent conductive sub-layer distal to the base substrate. The metallic conductive sub-layer is substantially in the inter-subpixel region.

Abstract: The present application discloses a display substrate. The display substrate includes a base substrate; a plurality of thin film transistors for driving image display on the base substrate; a planarization layer on a side of the plurality of thin film transistors distal to the base substrate; and a pixel definition layer defining a plurality of subpixel regions. The display substrate includes a recess extending into the planarization layer and in an inter-subpixel region of the display substrate. The display substrate further includes a recess fill layer in the recess. The recess fill layer has a light transmittance rate lower than that of the planarization layer.

Abstract: The present disclosure provides a TFT. The TFT includes an active layer and a gate insulating layer, the active layer includes a first active sub-layer and a second active sub-layer which are arranged in a stacked manner, the second active sub-layer is between the gate insulating layer and the first active sub-layer, a Fermi potential of the first active sub-layer is larger than a Fermi potential of the second active sub-layer, a maximum thickness of a depletion region in the first active sub-layer is equal to a thickness of the first active sub-layer, and a maximum thickness of a depletion region in the second active sub-layer is equal to a thickness of the second active sub-layer.

Abstract: An array substrate, a display panel including the array substrate, and a fabrication method of the array substrate are provided. The array substrate includes a base substrate, a light-shielding portion, a thin-film transistor and a capacitor. The light-shielding portion is formed on a first surface of the base substrate. The thin-film transistor is formed on a side of the light-shielding portion away from the base substrate, and includes an active layer. The capacitor is formed on the first surface of the base substrate, and includes a first capacitive electrode and a second capacitive electrode. The first capacitive electrode and the second capacitive electrode are at least partially arranged opposite to each other in a direction perpendicular to the first surface of the base substrate. The first capacitive electrode is provided in a same layer as the light-shielding portion.

Abstract: Provided are a thin film transistor and manufacturing method therefor, and an array substrate, and a display device. The method includes: forming a source electrode and a drain electrode on a substrate; forming a photoresist layer at the side of the source electrode and the drain electrode away from the substrate; performing exposure and developing treatment on the photoresist layer so as to obtain a photoresist pattern; successively forming a semiconductor layer, a first insulation layer and a conducting layer in sequence on at the side of the photoresist pattern away from the substrate; and removing the photoresist pattern so as to obtain an active layer a gate insulation layer and a gate electrode.

Abstract: The present application discloses a display substrate. The display substrate includes a base substrate; a plurality of thin film transistors for driving image display on the base substrate; a planarization layer on a side of the plurality of thin film transistors distal to the base substrate; and a pixel definition layer defining a plurality of subpixel regions. The display substrate includes a recess extending into the planarization layer and in an inter-subpixel region of the display substrate. The display substrate further includes a recess fill layer in the recess. The recess fill layer has a light transmittance rate lower than that of the planarization layer.

Abstract: The present disclosure provides a substrate, a manufacturing method thereof, and a transparent display device. The substrate comprising: a plurality of pixel units, at least a part of which includes a light-emitting area and a transparent area, and the light-emitting area includes a thin-film transistor; a light blocking member disposed in the light-emitting area and configured to block light that is directed to the thin-film transistor through the transparent area.

Abstract: An array substrate, a manufacturing method thereof and a display device are provided. The manufacturing method includes: forming a light-shielding pattern layer, a buffer layer, an active layer, a gate insulating layer and a gate electrode on a base substrate, which are away from the base substrate in sequence; depositing an amorphous silicon (a-Si) film on the base substrate in a temperature range of 15-150° C.; forming a first interlayer dielectric (ILD) at least disposed above the active layer by patterning the a-Si film; forming through holes in the first ILD, through which a source contact region and a drain contact region of the active layer are exposed; and forming a source electrode and a drain electrode on the first ILD, which are respectively connected with the source contact region and the drain contact region via the through holes.

Abstract: The present disclosure relates to a thin film transistor. The thin film transistor may include a substrate, a source electrode on the substrate, a drain electrode on the substrate, a gate on the substrate, and an active layer on the substrate. The source electrode may include a first teeth portion. The drain electrode may include a second teeth portion. The gate may include a third teeth portion. The active layer may include a plurality of channel regions. The first teeth portion, the second teeth portion, the third teeth portion, and the active layer form a plurality of sub-thin film transistors connected in parallel. The center sub-thin film transistor has a channel region having a smallest width-to-length ratio among the plurality of sub-thin film transistors.

Abstract: Disclosed are an organic electroluminescence display panel, a manufacturing method therefor, and a display device. The organic electroluminescence display panel comprises an array substrate and an opposite substrate which are disposed opposite to each other; the opposite substrate comprises a first base substrate and multiple spacers located on the first base substrate, and the array substrate comprises a second base substrate, multiple sub pixels located on the second base substrate, a pixel defining layer for defining regions of the sub pixels, and elastomers located on the pixel defining layer and having one-to-one correspondence to at least part of the spacers in terms of position; the elastomers are compressed by the corresponding spacers during cell aligning to buffer the pressure applied to the array substrate.

Abstract: An OLED display panel includes a cover and a backplane, a plurality of color filter (CF) units are arranged in an array on the cover; auxiliary cathodes are filled into gaps among the CF units; the auxiliary cathodes include a black matrix, a buffer layer and a metal layer; a planarization layer is disposed on the auxiliary cathodes and the CF units; a plurality of openings are disposed in the planarization layer at locations corresponding to the auxiliary cathodes; a plurality of spacers are disposed on the planarization layer at locations corresponding to the auxiliary cathodes; the spacers abut against and support the cover and the backplane; a transparent electrode layer is disposed on the planarization layer and the spacers and is communicated with the auxiliary cathodes via the openings; and the plurality of CF units of the cover and pixel regions of the backplane are oppositely arranged.

Abstract: An array substrate, a manufacturing method thereof and a display device are provided. The manufacturing method includes: forming a light-shielding pattern layer, a buffer layer, an active layer, a gate insulating layer and a gate electrode on a base substrate, which are away from the base substrate in sequence; depositing an amorphous silicon (a-Si) film on the base substrate in a temperature range of 15-150° C.; forming a first interlayer dielectric (ILD) at least disposed above the active layer by patterning the a-Si film; forming through holes in the first ILD, through which a source contact region and a drain contact region of the active layer are exposed; and forming a source electrode and a drain electrode on the first ILD, which are respectively connected with the source contact region and the drain contact region via the through holes.

Abstract: The present disclosure relates to a gas mixing device and a method, and a CVD apparatus including the gas mixing device. The gas mixing device includes: an inlet; a mixing tube in communication with the inlet, an inner wall of the mixing tube being formed with a spiral structure such that gases entering the mixing tube are rotatably travelling along the spiral structure and mixed; and an outlet through which the mixed gases in the mixing tube outflow.

Abstract: Provided are a thin film transistor and manufacturing method therefor, and an array substrate, and a display device. The method includes: forming a source electrode and a drain electrode on a substrate; forming a photoresist layer at the side of the source electrode and the drain electrode away from the substrate; performing exposure and developing treatment on the photoresist layer so as to obtain a photoresist pattern; successively forming a semiconductor layer, a first insulation layer and a conducting layer in sequence on at the side of the photoresist pattern away from the substrate; and removing the photoresist pattern so as to obtain an active layer a gate insulation layer and a gate electrode.