Abstract: A thin film transistor, and a method for manufacturing the thin film transistor, a base substrate and a display device are provided. The method includes: forming a semiconductor layer on a base substrate, wherein the semiconductor layer includes a pattern of a first metal oxide and a pattern of a second metal oxide covering the pattern of the first metal oxide; and etching, through a mask, a portion of the pattern of the second metal oxide out of a region of the mask by using etchant, wherein the mask is located within a region of the pattern of the second metal oxide, and the etchant chemically reacts with a surface of a portion of the pattern of the first metal oxide out of the region of the mask, to form conductors serving as a source electrode and a drain electrode.

Abstract: An OLED display panel includes a cover and a backplane, a plurality of color filter (CF) units are arranged in an array on the cover; auxiliary cathodes are filled into gaps among the CF units; the auxiliary cathodes include a black matrix, a buffer layer and a metal layer; a planarization layer is disposed on the auxiliary cathodes and the CF units; a plurality of openings are disposed in the planarization layer at locations corresponding to the auxiliary cathodes; a plurality of spacers are disposed on the planarization layer at locations corresponding to the auxiliary cathodes; the spacers abut against and support the cover and the backplane; a transparent electrode layer is disposed on the planarization layer and the spacers and is communicated with the auxiliary cathodes via the openings; and the plurality of CF units of the cover and pixel regions of the backplane are oppositely arranged.

Abstract: The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.

Abstract: A base and a manufacturing method thereof and a display device are provided, so that a problem of faultage of an insulating layer when forming the insulating layer on an aluminum electrode of a substrate is solved. The base includes an aluminum electrode in a first setting pattern on a substrate, and an aluminum oxide layer or an aluminum nitride layer (3) in a second setting pattern provided in a same layer with the aluminum electrode. The first setting pattern and the second setting pattern are complementary to each other.

Abstract: A method for preparing an OLED and an OLED device are provided. The method for preparing an OLED comprises forming an anode metal layer on an organic layer; forming an inorganic layer on the anode metal layer; and forming the anode metal layer into an anode layer comprising a pattern of an anode.

Abstract: The present invention discloses an array substrate and a preparation method thereof, a display panel and a display device, so as to solve the problem that the performance of the oxide TFT may be reduced and even out of work due to relatively great shift of the threshold voltage of the oxide TFT since the water, oxygen and hydrogen groups may permeate to the active layer of the oxide TFT from the passivation layer above the oxide TFT.

Abstract: Embodiments of the present invention provide a gas detection sensor, a display panel, and a display device. The gas detection sensor comprises: a gas sensitive part; two detection electrodes electrically connected with each other through the gas sensitive part; and a protective layer enclosing the gas sensitive part and the detection electrodes. When one of the detection electrodes is applied with a detecting signal, the detecting signal is output from the other detection electrode after being modulated by the gas sensitive part, and a voltage signal output by the other detection electrode is related to a nature of the outside air to which the gas sensitive part is exposed, thereby a detection on air quality may be achieved through detecting the voltage signal output from the other detection electrode, such that a simply structured and portable gas detection sensor can be realized.

Abstract: The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer of the thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited; depositing a source and drain electrode layer and patterning it by a dry etching to form a source electrode and a drain electrode; and etching or passivating the protective layer located in a back channel region of the source electrode and the drain electrode. In addition, the present disclosure also discloses a thin film transistor produced by the above method, and an array substrate.

Abstract: A substrate comprising a base, and a copper metallic layer and a first barrier layer disposed on the base in sequence, and further comprising a connecting layer positioned on the first barrier layer; the connecting layer is configured to connect photoresist coated on the connecting layer and the first barrier layer.

Abstract: Embodiments of the present invention relates to a thin film transistor and a method for manufacturing the same, a display substrate and a display device. The thin film transistor comprises an active layer, a source electrode, a drain electrode and an ohmic contact layer, wherein the ohmic contact layer is disposed between the active layer and the source electrode and/or between the active layer and the drain electrode to improve an ohmic contact property of the active layer with the source electrode and/or the drain electrode. The present invention solves the problem of poor ohmic contact effect between the active layer and the source and drain electrodes in the existing thin film transistor, thereby improving the ohmic contact property of the active layer with the source and drain electrodes and meanwhile improving display effect of images of a display.

Abstract: A method for preparing an OLED and an OLED device are provided. The method for preparing an OLED comprises forming an anode metal layer on an organic layer; forming an inorganic layer on the anode metal layer; and forming the anode metal layer into an anode layer comprising a pattern of an anode. (FIG.

Abstract: A method for fabricating a flexible substrate and a flexible substrate prefabricated component are disclosed, the flexible substrate comprises an electronic device and a flexible layer provided with the electronic device. The fabrication method comprises: disposing a single-sided adhesive layer at a central portion of a surface of a support substrate, an adhesive side of the single-sided adhesive layer being in contact with the support substrate; disposing a double-sided adhesive layer at a peripheral region of the support substrate; disposing the flexible layer on surfaces of the single-sided adhesive layer and the double-sided adhesive layer, the flexible layer being bonded to the double-sided adhesive layer; disposing the electronic device in a region of a surface of the flexible layer corresponding to the single-sided adhesive layer; cutting the flexible layer along a boundary of the electronic device and removing the flexible layer from the single-sided adhesive layer.

Abstract: Embodiments of the present invention provide a thin film transistor, method for fabricating the thin film transistor and display apparatus. The method includes steps of: forming an active layer pattern which has a mobility greater than a predetermined threshold from an active layer material; and performing ion implantation on the active layer pattern. The energy of a compound bond formed from the implanted ions is greater than that of a compound bond formed from ions in the active layer material, thereby reducing the chance of vacancy formation and reducing the carrier concentration. Therefore, the mobility of the active layer surface is reduced, the leakage current is reduced, the threshold voltage is adjusted to shift toward positive direction and performance of the thin film transistor is improved.

Abstract: Fabrication methods of a transparent conductive electrode (301) and an array substrate are provided. The fabrication method of the transparent conductive electrode (301) comprises: forming a sacrificial layer pattern (201) on a substrate (10) having a first region (A1) and a second region (A2) adjacent to each other, wherein the sacrificial layer pattern (201) is located in the second region (A2), and has an upper sharp corner profile formed on a side adjacent to the first region (A1); forming a transparent conductive thin-film (30) in the first region (A1) and the second region (A2) of the substrate (10) with the sacrificial layer pattern (201) formed thereon, wherein a thickness ratio of the transparent conductive thin-film (30) to the sacrificial layer pattern (201) is less than or equal to 1:1.

Abstract: The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.

Abstract: Embodiments of the present invention relates to a thin film transistor and a method for manufacturing the same, a display substrate and a display device. The thin film transistor comprises an active layer, a source electrode, a drain electrode and an ohmic contact layer, wherein the ohmic contact layer is disposed between the active layer and the source electrode and/or between the active layer and the drain electrode to improve an ohmic contact property of the active layer with the source electrode and/or the drain electrode. The present invention solves the problem of poor ohmic contact effect between the active layer and the source and drain electrodes in the existing thin film transistor, thereby improving the ohmic contact property of the active layer with the source and drain electrodes and meanwhile improving display effect of images of a display.

Abstract: The present invention discloses an array substrate and a preparation method thereof, a display panel and a display device, so as to solve the problem that the performance of the oxide TFT may be reduced and even out of work due to relatively great shift of the threshold voltage of the oxide TFT since the water, oxygen and hydrogen groups may permeate to the active layer of the oxide TFT from the passivation layer above the oxide TFT.

Abstract: The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer of the thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited; depositing a source and drain electrode layer and patterning it by a dry etching to form a source electrode and a drain electrode; and etching or passivating the protective layer located in a back channel region of the source electrode and the drain electrode. In addition, the present disclosure also discloses a thin film transistor produced by the above method, and an array substrate.

Abstract: A base and a manufacturing method thereof and a display device are provided, so that a problem of faultage of an insulating layer when forming the insulating layer on an aluminum electrode of a substrate is solved. The base includes an aluminum electrode in a first setting pattern on a substrate, and an aluminum oxide layer or an aluminum nitride layer (3) in a second setting pattern provided in a same layer with the aluminum electrode. The first setting pattern and the second setting pattern are complementary to each other.

Abstract: A method for fabricating a flexible substrate and a flexible substrate prefabricated component are disclosed, the flexible substrate comprises an electronic device and a flexible layer provided with the electronic device. The fabrication method comprises: disposing a single-sided adhesive layer at a central portion of a surface of a support substrate, an adhesive side of the single-sided adhesive layer being in contact with the support substrate; disposing a double-sided adhesive layer at a peripheral region of the support substrate; disposing the flexible layer on surfaces of the single-sided adhesive layer and the double-sided adhesive layer, the flexible layer being bonded to the double-sided adhesive layer; disposing the electronic device in a region of a surface of the flexible layer corresponding to the single-sided adhesive layer; cutting the flexible layer along a boundary of the electronic device and removing the flexible layer from the single-sided adhesive layer.