Abstract: A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer.

Abstract: Disclosed embodiments include photovoltaic modules having a conductor interface and a heat-activated adhesive layer configured to bond the conductor interface to the module. Methods of manufacturing photovoltaic modules having a conductor interface and heat-activated adhesive layer are also disclosed.

Abstract: A temperature uniformity device controls the temperature and temperature uniformity of an object such as a photovoltaic module undergoing testing. The temperature uniformity device includes a thermal conductivity device and a pliable thermally conductive interface material inserted between the object and the thermal conductivity device.

Abstract: A system and method employing a heater-orifice may be used to heat a flow path and to control the supply of vapor from a vaporizable material to an object. Variable or constant diameter heating rods may be used to apply heat to a flow path in order to control the supply of vapor from a vaporizable material. A baffle plate may be used to control the vapor pressure and vapor flow from a vessel containing a vaporizable material. The heater-orifice, heating rods, and baffle plate may be used alone or in combination with one another to control the flow of vaporizable material.

Abstract: Methods and devices are described for allowing the ultrasonic welding of a junction box, having at least one overmolded element, to a cover panel of a photovoltaic module.

Abstract: An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.

Abstract: Described herein is a method and apparatus for measuring the thickness of a deposited semiconductor material. A colorimeter has an optical source that illuminates a portion of a deposited semiconductor material with optical radiation, a sensor that collects and measures color information related to reflected radiation from the deposited semiconductor material, and a processor that receives the color information related to the reflected radiation from the sensor and calculates a thickness of the semiconductor material. The processor may control a semiconductor material deposition apparatus.

Abstract: An in-situ method of cleaning a vacuum deposition chamber can include flowing at least one reactive gas into the chamber.

Abstract: An improved feeder system and method for vapor transport deposition that includes at least two vaporizers couple to a common distributor for vaporizing and co-depositing at least any two vaporizable materials as a material layer on a substrate. Composition of the material layer can be controlled by changing the flow of vapors from the respective vaporizers into the distributor to adjust the proportion of respective vapors in the combined vapor prior to deposition. Flow of the vapors from the respective vaporizers into the distributor may be controlled by adjusting the flow of carrier gas transporting the raw material into the vaporizer and/or by adjusting the vibration speed and/or amplitude of the powder feeders that process the raw material.

Abstract: A moisture trapping filler composition may include a filler material combined with a desiccant material.