Patents by Inventor Frédéric Barbier
Frédéric Barbier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8921753Abstract: An imaging element includes a photosensor and a transfer transistor to transfer electrical charges from the photosensor to a charge accumulation node. A selector is configured to receive at least two logic selection signals and to supply an activation signal, which is a function of the selection signals, to a control terminal of the transfer transistor. The selector is configured to receive at least two selection signals, each having a positive voltage when it is at a logic value 1 and a negative voltage when it is a logic value 0, and to supply the activation signal having a negative voltage when the imaging element is not selected.Type: GrantFiled: April 26, 2012Date of Patent: December 30, 2014Assignee: STMicroelectronics SAInventor: Frederic Barbier
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Patent number: 8901692Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.Type: GrantFiled: December 12, 2011Date of Patent: December 2, 2014Assignees: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics (Rousset) SAS, STMicroelectronics SAInventors: David Coulon, Benoit Deschamps, Frédéric Barbier
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Patent number: 8853755Abstract: A pixel circuit of an image sensor includes a sense node for storing a charge transferred from one or more photodiodes, a source follower transistor having its gate coupled to the sense node and its source node coupled to an output line of the pixel circuit via a read transistor, wherein a body contact of the source follower transistor is connected to the output line.Type: GrantFiled: September 24, 2010Date of Patent: October 7, 2014Assignees: STMicroelectronics SA, STMicroelectronics (Crolles 2) SASInventors: Frédéric Barbier, François Roy
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Patent number: 8802487Abstract: Stencil for a screen-printing system, comprising slits (22, 23) in a central printing zone (13), forming a pattern to be printed, characterized in that it comprises one or more apertures (32) in a peripheral deforming zone (14), which apertures are intended to cause this peripheral deforming zone (14) to deform under the effect of a stress applied to the stencil while reducing deformation of the central printing one (13).Type: GrantFiled: February 3, 2012Date of Patent: August 12, 2014Assignee: Commissariat a l'energie Atomique et aux Energies AlternativesInventors: Armand Bettinelli, Frédéric Barbier
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Patent number: 8791401Abstract: A method for controlling a pixel may include first and second photosites, each having a photodiode and a charge-transfer transistor, a read node, and an electronic read element, all of which are common to all the photosites. The method may include an accumulation of photogenerated charges in the photodiode of the first photosite during a first period, an accumulation of photogenerated charges in the photodiode of the second photosite during a second period shorter than the first period, a selection of the signal corresponding to the quantity of charges accumulated in the photodiode of a photosite having the highest unsaturated intensity or else a saturation signal, and a digitization of the selected signal.Type: GrantFiled: May 31, 2012Date of Patent: July 29, 2014Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Frederic Barbier, Frederic Lalanne
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Publication number: 20140127854Abstract: Stencil for a screen-printing system, comprising slits (22, 23) in a central printing zone (13), forming a pattern to be printed, characterized in that it comprises one or more apertures (32) in a peripheral deforming zone (14), which apertures are intended to cause this peripheral deforming zone (14) to deform under the effect of a stress applied to the stencil while reducing deformation of the central printing one (13).Type: ApplicationFiled: February 3, 2012Publication date: May 8, 2014Applicant: Commissariat a L'energie Atomique et aux Energies AlternativesInventors: Armand Bettinelli, Frédéric Barbier
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Patent number: 8659465Abstract: A method of analog to digital voltage conversion including: generating a quadratic signal based on an analog time varying reference signal; generating a ramp signal based on the quadratic signal; and converting an analog input voltage to a digital output value based on a time duration determined by a comparison of the analog input voltage with the ramp signal.Type: GrantFiled: November 10, 2011Date of Patent: February 25, 2014Assignees: STMicroelectronics S.A., STMicroelectronics (Grenoble 2) SASInventors: Laurent Simony, Benoît Deschamps, Alexandre Cellier, Frédéric Barbier
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Patent number: 8531567Abstract: An image sensor including a first pixel positioned between second and third pixels, each of the first, second and third pixels comprising a photodiode region surrounded by an isolation trench; a first charge transfer gate comprising a first column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and second pixels, the first column electrode being configured to receive a first transfer voltage signal; and a second charge transfer gate including a second column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and third pixels, the second column electrode being configured to receive a second transfer voltage signal.Type: GrantFiled: October 22, 2010Date of Patent: September 10, 2013Assignee: STMicroelectronics (Crolles 2) SASInventors: François Roy, Frédéric Barbier
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Publication number: 20130105664Abstract: An imaging element includes a photosensor and a transfer transistor to transfer electrical charges from the photosensor to a charge accumulation node. A selector is configured to receive at least two logic selection signals and to supply an activation signal, which is a function of the selection signals, to a control terminal of the transfer transistor. The selector is configured to receive at least two selection signals, each having a positive voltage when it is at a logic value 1 and a negative voltage when it is a logic value 0, and to supply the activation signal having a negative voltage when the imaging element is not selected.Type: ApplicationFiled: April 26, 2012Publication date: May 2, 2013Inventor: FREDERIC BARBIER
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Publication number: 20130009041Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.Type: ApplicationFiled: September 6, 2012Publication date: January 10, 2013Applicant: STMicroelectronics S.A.Inventors: Frédéric Barbier, Yvon Cazaux
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Publication number: 20120305750Abstract: A method for controlling a pixel may include first and second photosites, each having a photodiode and a charge-transfer transistor, a read node, and an electronic read element, all of which are common to all the photosites. The method may include an accumulation of photogenerated charges in the photodiode of the first photosite during a first period, an accumulation of photogenerated charges in the photodiode of the second photosite during a second period shorter than the first period, a selection of the signal corresponding to the quantity of charges accumulated in the photodiode of a photosite having the highest unsaturated intensity or else a saturation signal, and a digitization of the selected signal.Type: ApplicationFiled: May 31, 2012Publication date: December 6, 2012Applicants: STMicroelectronics SA, STMicroelectronics (Crolles 2) SASInventors: Frederic Barbier, Frederic Lalanne
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Patent number: 8284280Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.Type: GrantFiled: December 18, 2007Date of Patent: October 9, 2012Assignee: STMicroelectronics S.A.Inventors: Frédéric Barbier, Yvon Cazaux
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Patent number: 8253090Abstract: A method of reading voltages from an image sensor having an array of pixels, each pixel having at least one photodiode connectable to a storage node, the method having: controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode above a first threshold to the storage node at the start and end of a first integration period and reading a first voltage at the storage node of each pixel in the row at the end of the first integration period; controlling of the pixels in the row to transfer charge accumulated in the photodiode above a second threshold to the storage node at the start and end of a second integration period longer than the first integration period, and reading a second voltage value at the storage node of each pixel in the row at the end of the second integration period; controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode to the storage node at the end of a third integration period longer than the first and second integration perioType: GrantFiled: November 18, 2008Date of Patent: August 28, 2012Assignee: STMicroelectronics S.A.Inventors: Frédéric Barbier, Benoît Deschamps
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Publication number: 20120153422Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.Type: ApplicationFiled: December 12, 2011Publication date: June 21, 2012Applicants: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics SA, STMicroelectronics (Rousset) SASInventors: David Coulon, Benoit Deschamps, Frédéric Barbier
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Publication number: 20120126094Abstract: A method of analog to digital voltage conversion including: generating a quadratic signal based on an analog time varying reference signal; generating a ramp signal based on the quadratic signal; and converting an analog input voltage to a digital output value based on a time duration determined by a comparison of the analog input voltage with the ramp signal.Type: ApplicationFiled: November 10, 2011Publication date: May 24, 2012Applicants: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics S.A.Inventors: Laurent Simony, Benoit Deschamps, Alexandre Cellier, Frédéric Barbier
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Patent number: 8159587Abstract: A method of reading voltages from an image sensor having an array of pixels, each pixel Having at least one photodiode connectable to a storage node, the method including: controlling each pixel in a row of pixels to store and output a first voltage value at a first instance, a second voltage value at a second instance, and a third voltage value at a third instance, the first, second and third voltage values being representative of charge accumulated by the photodiodes during an integration phase; comparing the first voltage value from each pixel with a reference threshold; sampling for each pixel, based on the comparison, one of the second and third voltage values, and generating an output pixel value based on the sampled one of the second and third voltage values.Type: GrantFiled: December 11, 2008Date of Patent: April 17, 2012Assignee: STMicroelectronics S.A.Inventors: Benoît Deschamps, Frédéric Barbier
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Patent number: 8153947Abstract: An image sensor formed of an array of pixels, each pixel including a photodiode coupled between a first reference voltage and a first switch, the first switch being operable to connect the photodiode to a first node; a capacitor arranged to store a charge accumulated by the photodiode, the capacitor being coupled between a second reference voltage and a second node; a second switch coupled between the first and second nodes, the second switch being operable to connect the capacitor to the first node; and read circuitry coupled for reading the voltage at the second node.Type: GrantFiled: January 8, 2009Date of Patent: April 10, 2012Assignee: STMicroelectronics S.A.Inventors: Frédéric Barbier, Yvon Cazaux
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Publication number: 20110180689Abstract: An image sensor having a number of pixel zones delimited by isolation trenches, each pixel zone including a photodiode; a transfer gate associated with each of the pixel zones and arranged to transfer charge from the photodiode to a sensing node; and a read circuit for reading a voltage at one of the sensing nodes, the read circuitry including a number of transistors of which at least one is positioned at least partially over a pixel zone of the pixel zones.Type: ApplicationFiled: January 26, 2011Publication date: July 28, 2011Applicants: STMicroelectronics S.A., STMicroelectronics (Crolles 2) SASInventors: François Roy, Frédéric Barbier
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Publication number: 20110096208Abstract: An image sensor including a first pixel positioned between second and third pixels, each of the first, second and third pixels comprising a photodiode region surrounded by an isolation trench; a first charge transfer gate comprising a first column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and second pixels, the first column electrode being configured to receive a first transfer voltage signal; and a second charge transfer gate including a second column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and third pixels, the second column electrode being configured to receive a second transfer voltage signal.Type: ApplicationFiled: October 22, 2010Publication date: April 28, 2011Applicant: STMicroelectronics (Crolles 2) SASInventors: François Roy, Frédéric Barbier
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Publication number: 20110068381Abstract: A pixel circuit of an image sensor includes a sense node for storing a charge transferred from one or more photodiodes, a source follower transistor having its gate coupled to the sense node and its source node coupled to an output line of the pixel circuit via a read transistor, wherein a body contact of the source follower transistor is connected to the output line.Type: ApplicationFiled: September 24, 2010Publication date: March 24, 2011Applicants: STMicroelectronics S.A., STMicroelectronics (Crolles 2) SASInventors: Frédéric Barbier, François Roy