Abstract: A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. The main surface includes at least one incidence area for electromagnetic radiation. A plurality of doped wells of a second type of electric conductivity are arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The doped wells and the substrate are electrically contactable. The doped wells are arranged along a perimeter of the at least one incidence area, such that a center region of the incidence area is free from the doped wells.

Abstract: A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. At least one doped well of a second type of electric conductivity is arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The at least one doped well and the substrate are electrically contactable. A cover layer is arranged on the main surface of the substrate. The cover layer is at least one of an epi-layer of the first type of electric conductivity and a dielectric surface passivation layer comprising a plurality of space charges, or a combination thereof.

Abstract: An integrated radiation sensor is disclosed. The integrated radiation sensor comprises a first optical filter associated with a first radiation-sensing element and a second optical filter associated with a second radiation-sensing element. The first optical filter is configured to pass radiation to the first radiation-sensing element with wavelengths within a UV-C range. The second optical filter is configured to pass radiation to the second radiation-sensing element with wavelengths longer than wavelengths within the UV-C range. Also disclosed is a method of manufacturing the integrated radiation sensor and methods of use of the integrated radiation sensor.

Abstract: An integrated radiation sensor is disclosed. The integrated radiation sensor comprises a first optical filter associated with a first radiation-sensing element and a second optical filter associated with a second radiation-sensing element. The first optical filter is configured to pass radiation to the first radiation-sensing element with wavelengths within a UV-C range. The second optical filter is configured to pass radiation to the second radiation-sensing element with wavelengths longer than wavelengths within the UV-C range. Also disclosed is a method of manufacturing the integrated radiation sensor and methods of use of the integrated radiation sensor.

Abstract: An apparatus includes an integrated sensor module for detection of chemical substances. The sensor module includes a UV radiation source operable to emit UV radiation onto a sample. The sensor module also includes a sensor including dedicated channels disposed so as receive UV radiation reflected by the sample. Each of the channels is selectively sensitive to a different respective portion of the UV spectrum; collectively, the channels cover at least part of the UV spectrum sufficient for reconstruction of a spectral curve of the sample. An electronic control unit can be used to identify a composition of the sample based on signals from the channels.

Abstract: An integrated sensor module includes a UV radiation source operable to emit UV radiation onto a sample, and a sensor including spectrally sensitive UV channels disposed so as receive UV radiation from the sample. Each of the UV channels includes a respective sensing device and a respective UV interference filter disposed over a UV radiation sensitive portion of the respective sensing device. The respective UV interference filter for each particular one of the channels has transmission characteristics that are spectrally responsive to a spectral signature of a respective chemical substance.

Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

Abstract: The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Abstract: A sensor device comprises a semiconductor substrate with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well arranged within the semiconductor substrate and having a second type of electrical conductivity and a second well arranged at least partially within the first well and having the first type of electrical conductivity. A doping concentration of the first well is greater than a doping concentration of the second well within a surface region at a main surface of the semiconductor substrate. Thereby, a photon capturing layer having the second type of electrical conductivity is formed at the main surface. A p-n junction for detecting the incident UV radiation is formed by a boundary between the second well and the photon capturing layer.

Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

Abstract: A diode (23) is arranged near a transistor (25) to protect from ESD. The diode comprises a well (5) of a first conductivity type and a doped region (4) of a second conductivity type in opposition to the first conductivity type. The transistor comprises a doped well (2) and a doped region (1) of the first conductivity type. The well (2) of the transistor is doped lower than the well (5) of the diode.

Abstract: The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

Abstract: A circuit in a transmitter with multiple power amplifiers includes multiple individual linearizer circuits each receiving a corresponding input signal and each providing a conditioned input signal to a corresponding power amplifier. The linearizer circuit each include: (a) a pre-distortion circuit receiving (i) the corresponding input signal and (ii) the output signal of a corresponding power amplifier, and providing a pre-distortion signal; (b) a cancelation circuit receiving an interfering signal and providing a cancelation signal; and (c) a combination circuit that combines the cancelation signal and the pre-distortion signal to provide a conditioned input signal to the corresponding power amplifier.

Abstract: A circuit in a transmitter with multiple power amplifiers includes multiple individual linearizer circuits each receiving a corresponding input signal and each providing a conditioned input signal to a corresponding power amplifier, The linearizer circuit each include: (a) a pre-distortion circuit receiving (i) the corresponding input signal and (ii) the output signal of a corresponding power amplifier, and providing a pre-distortion signal; (b) a cancelation circuit receiving an interfering signal and providing a cancelation signal; and (c) a combination circuit that combines the cancelation signal and the pre-distortion signal to provide a conditioned input signal to the corresponding power amplifier.

Abstract: A semiconductor body comprising a first connection for feeding an upper supply potential and a first and a second terminal cell, which are situated at a distance from each other. The semiconductor body further comprises an arrester structure, which is arranged between the first and second terminal cells in a p-doped substrate. The arrester structure comprises a first and a second p-channel field-effect transistor structure, each of which is set in a respective n-doped well substantially parallel to the first and second terminal cells, and a diode structure with a p-doped region set in a further n-doped well between the n-doped wells of the first and second p-channel field-effect transistor structures. The diode structure is designed to activate the first and second p-channel field-effect transistor structure as arrester elements during an electrostatic discharge in the semiconductor body.

Abstract: A diode (23) is arranged near a transistor (25) to protect from ESD. The diode comprises a well (5) of a first conductivity type and a doped region (4) of a second conductivity type in opposition to the first conductivity type. The transistor comprises a doped well (2) and a doped region (1) of the first conductivity type. The well (2) of the transistor is doped lower than the well (5) of the diode.

Abstract: A cost function generator circuit includes memory terms each receiving one or more input signals, and each providing inphase and quadrature output current signals. The inphase and quadrature output currents of the memory terms are summed to provide combined inphase and quadrature output currents, respectively. Transimpedance amplifiers are provided to transform the combined inphase and quadrature output currents into an inphase output voltage and a quadrature output voltage.

Abstract: Systems and methods are provided for power measurement of signals such that the power measurement is insensitive to PVT variations of the measurement systems. A power measurement system includes an analog squarer circuitry, an integrating ADC, and a controller. The squarer circuitry calculates the power of a signal whose power is to be measured while the integrating ADC integrates the calculated power over a runup interval to generate an integrated power. The squarer circuitry also calculates the power of a reference for the integrating ADC to de-integrate the integrated power over a rundown interval. The power measurements are independent of PVT variations of the analog squarer circuitry and integrating ADC. The controller digitally controls the runup interval and measures the rundown interval to provide digitized power measurements. The analog squarer circuitry have replica squarer circuits. Process dependent mismatches between the replica analog circuitry may be removed through a calibration process.