Patents by Inventor Francesca Iacopi

Francesca Iacopi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for defect detection
    Publication number: 20040246472
    Abstract: A method for determining the presence of defects in a covering layer overlying an underlying layer in accordance with an embodiment of the invention comprises providing a substrate comprising the covering layer, where the covering layer is at least partially exposed. The covering layer is subjected to a first substance, such as a solvent, and then subjected to a light beam. An optical property of the covering layer is determined and compared with a threshold value. The presence of defects in the covering layer is determined by the difference of the optical property from the threshold value, where the optical property indicates a level of penetration of the first substance through the covering layer.
    Type: Application
    Filed: June 9, 2003
    Publication date: December 9, 2004
    Applicant: Interuniversitair Microelektronica Centrum (IMEC vzw)
    Inventors: Frank Holsteyns, Francesca Iacopi, Karen Maex
  • Metal barrier behavior by SiC:H deposition on porous materials
    Patent number: 6541842
    Abstract: A sealing dielectric layer is applied between a porous dielectric layer and a metal diffusion barrier layer. The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition SixCy:Hz.
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: April 1, 2003
    Assignee: Dow Corning Corporation
    Inventors: Herman Meynen, William Kenneth Weidner, Francesca Iacopi, Stephane Malhouitre
  • METAL BARRIER BEHAVIOR BY SIC:H DEPOSITION ON POROUS MATERIALS
    Publication number: 20030001282
    Abstract: A sealing dielectric layer is applied between a porous dielectric layer and a metal diffusion barrier layer. The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition SixCy:Hz.
    Type: Application
    Filed: June 25, 2002
    Publication date: January 2, 2003
    Inventors: Herman Meynen, William Kenneth Weidner, Francesca Iacopi, Stephane Malhouitre