Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a semiconductor region, an insulative layer disposed above the semiconductor region, and a first non-insulative region disposed above the insulative layer. In certain aspects, a second non-insulative region is disposed adjacent to the semiconductor region, and a control region is disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Abstract: An apparatus may include an electrically conductive body to magnetically couple to a first magnetic field. A first tuning element may be connected to the electrically conductive body. An electrically conductive coil may be wound about an opening in the electrically conductive body, and configured to magnetically couple to a second magnetic field.

Abstract: Exemplary embodiments are directed to a power controller. A method may include comparing a summation voltage comprising a sum of an amplified error voltage and a reference voltage with an estimated voltage to generate a comparator output signal. The method may also include generating a gate drive signal from the comparator output signal and filtering a signal coupled to a power stage to generate the estimated voltage.

Abstract: Certain aspects of the present disclosure provide a semiconductor capacitor. The semiconductor capacitor generally includes an insulative layer, and a semiconductor region disposed adjacent to a first side of the insulative layer. The semiconductor capacitor also includes a first non-insulative region disposed adjacent to a second side of the insulative layer. In certain aspects, the semiconductor region may include a second non-insulative region, wherein the semiconductor region includes at least two regions having at least one of different doping concentrations or different doping types, and wherein one or more junctions between the at least two regions are disposed above or below the first non-insulative region.

Abstract: An apparatus and method for transmission of wireless power to a plurality of chargeable devices. The apparatus and method include and provide for a wireless power transmitter including a power transmitting element configured to use a current at a first level to wirelessly transmit power sufficient to provide power to one or more chargeable devices positioned within a charging region. The apparatus and method further include and provide for a controller to detect a subsequent chargeable device positioned within the charging region and to adjust the current from the first level to a default level prior to communication with the subsequent chargeable device.

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first non-insulative region disposed above a semiconductor region, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, the semiconductor variable capacitor also includes a first silicide layer disposed above the second non-insulative region, wherein the first silicide layer overlaps at least a portion of the semiconductor region. In certain aspects, a control region may be disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Abstract: Certain aspects of the present disclosure provide a variable capacitor. The variable capacitor generally includes a semiconductor region, a dielectric layer disposed adjacent to the semiconductor region, and a first non-insulative region disposed above the dielectric layer, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, a doping concentration of the semiconductor region changes as a function of a distance across the semiconductor region from the dielectric layer or the second non-insulative region.

Abstract: Certain aspects of the present disclosure provide a semiconductor capacitor. The semiconductor capacitor generally includes an insulative layer, and a semiconductor region disposed adjacent to a first side of the insulative layer. The semiconductor capacitor also includes a first non-insulative region disposed adjacent to a second side of the insulative layer. In certain aspects, the semiconductor region may include a second non-insulative region, wherein the semiconductor region includes at least two regions having at least one of different doping concentrations or different doping types, and wherein one or more junctions between the at least two regions are disposed above or below the first non-insulative region.

Abstract: A tunable capacitor may include a first terminal having a first semiconductor component with a first polarity. The tunable capacitor may also include a second terminal having a second semiconductor component with a second polarity. The second component may be adjacent to the first semiconductor component. The tunable capacitor may further include a first conductive material electrically coupled to a first depletion region at a first sidewall of the first semiconductor component.

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor device and techniques for fabricating a semiconductor device. In certain aspects, the semiconductor device includes a fin, a first non-insulative region disposed adjacent to a first side of the fin, and a second non-insulative region disposed adjacent to a second side of the fin. In certain aspects, the first non-insulative region and the second non-insulative region are separated by a trench, at least a portion of the trench being filled with a dielectric material disposed around the fin.

Abstract: Systems and methods for converting voltages between different voltage levels in a receiver are disclosed. In an aspect, a wireless power receiver apparatus for charging a chargeable device is provided. The apparatus includes a plurality of receive antennas disposed on a cover of the chargeable device, wherein at least one of the plurality of receive antennas is configured to wirelessly receive power according to a wireless charging protocol different from at least one other of the plurality of receive antennas. The apparatus includes a switching circuit disposed on the cover and configured to receive the wireless power from at least one of the plurality of receive antennas and selectively provide a respective voltage from a corresponding one of the plurality of receive antennas across an output configured to be connected to an input of the chargeable device.

Abstract: A wireless power transfer system may include a primary resonator and one or more secondary resonators. At least one of the secondary resonators lie in overlapping relation to the primary resonator. An electromagnetic (EM) field generated by the primary resonator can couple to the secondary resonators, thus inducing current flow in the secondary resonators. EM fields generated by the secondary resonators interact with the EM field from the primary resonator to produce a resultant EM field.

Abstract: An apparatus for receiving wireless power is provided. The apparatus comprises a coupler configured to receive a first amount of wireless power via a wireless field generated by a wireless power transmitter. The apparatus comprises a sensor circuit configured to measure the first amount of wireless power. The apparatus comprises a controller configured to instruct a feedback circuit to provide an indication to a user based on a comparison of the first amount of wireless power measured by the sensor circuit to a power threshold.

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor variable capacitor, and techniques for fabricating the same, implemented using a threshold voltage implant region. For example, the semiconductor variable capacitor generally includes a first non-insulative region disposed above a first semiconductor region, a second non-insulative region disposed above the first semiconductor region, and a threshold voltage (Vt) implant region interposed between the first non-insulative region and the first semiconductor region and disposed adjacent to the second non-insulative region. In certain aspects, the semiconductor variable capacitor also includes a control region disposed above the first semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor based on a buried oxide process. The semiconductor variable capacitor generally includes a first conductive pad coupled to a first non-insulative region and a second conductive pad coupled to a second non-insulative region. The second non-insulative region may be coupled to a semiconductor region. The capacitor may also include a first control region coupled to the first semiconductor region such that a capacitance between the first conductive pad and the second conductive pad is configured to be adjusted by varying a control voltage applied to the first control region. The capacitor also includes an insulator region disposed below the semiconductor region, wherein at least a portion of the first non-insulative region is separated from the second non-insulative region by the insulator region such that the first conductive pad is electrically isolated from the second conductive pad.

Abstract: Exemplary embodiments are directed to an apparatus for controlling magnetic field distribution including a wireless transmit antenna configured to generate a magnetic field for wirelessly transferring power to a charge-receiving device with the wireless transmit antenna, a parasitic antenna located near the wireless transmit antenna, and a switch configured to selectively enable the parasitic antenna to modify the magnetic field in response to an antenna parameter that indicates the presence of the charge-receiving device relative to the parasitic antenna.

Abstract: Certain aspects of the present disclosure generally relate to techniques for adjusting or setting a capacitance-versus-voltage (C-V) characteristic of a variable capacitor. For example, certain aspects of the present disclosure provide a capacitor device. The capacitor device generally includes a first variable capacitor and a second variable capacitor, each comprising a first terminal and a second terminal. In certain aspects, the second terminal of the second variable capacitor is coupled to the first terminal of the first variable capacitor, and the first terminal of the first variable capacitor is coupled to at least one biasing voltage node. In some cases, a decoupling capacitor may be coupled to the first terminal of the first variable capacitor.

Abstract: A tunable capacitor may include a first terminal having a first semiconductor component with a first polarity. The tunable capacitor may also include a second terminal having a second semiconductor component with a second polarity. The second component may be adjacent to the first semiconductor component. The tunable capacitor may further include a first conductive material electrically coupled to a first depletion region at a first sidewall of the first semiconductor component.

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first non-insulative region disposed above a semiconductor region, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, the semiconductor variable capacitor also includes a first silicide layer disposed above the second non-insulative region, wherein the first silicide layer overlaps at least a portion of the semiconductor region. In certain aspects, a control region may be disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a semiconductor region, an insulative layer disposed above the semiconductor region, and a first non-insulative region disposed above the insulative layer. In certain aspects, a second non-insulative region is disposed adjacent to the semiconductor region, and a control region is disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.