Patents by Inventor Francimar Campana
Francimar Campana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8569166Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.Type: GrantFiled: June 3, 2011Date of Patent: October 29, 2013Assignee: Applied Materials, Inc.Inventors: Francimar Campana Schmitt, Li-Qun Xia, Son Van Nguyen, Shankar Venkataraman
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Publication number: 20110237085Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.Type: ApplicationFiled: June 3, 2011Publication date: September 29, 2011Inventors: FRANCIMAR CAMPANA SCHMITT, Li-Qun Xia, Son Van Nguyen, Shankar Venkataraman
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Patent number: 7960294Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.Type: GrantFiled: July 21, 2009Date of Patent: June 14, 2011Assignee: Applied Materials, Inc.Inventors: Francimar Campana Schmitt, Li-Qun Xia, Son Van Nguyen, Shankar Venkataraman
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Publication number: 20090305514Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.Type: ApplicationFiled: July 21, 2009Publication date: December 10, 2009Inventors: Francimar Campana Schmitt, Li-Qun Xia, Son Van Nguyen, Shankar Venkataraman
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Publication number: 20090197086Abstract: A method and structure for the fabrication of semiconductor devices having feature sizes in the range of 90 nm and smaller is provided. In one embodiment of the invention, a method is provided for processing a substrate including depositing an anti-reflective coating layer on a surface of the substrate, depositing an adhesion promotion layer on the anti-reflective coating layer, and depositing a resist material on the adhesion promotion layer. In another embodiment of the invention, a semiconductor substrate structure is provided including a dielectric substrate, an amorphous carbon layer deposited on the dielectric layer, an anti-reflective coating layer deposited on the amorphous carbon layer, an adhesion promotion layer deposited on the anti-reflective coating layer, and a resist material deposited on the adhesion promotion layer.Type: ApplicationFiled: February 4, 2008Publication date: August 6, 2009Inventors: Sudha Rathi, Eui Kyoon Kim, Bok Hoen Kim, Martin Jay Seamons, Francimar Campana Schmitt
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Patent number: 7563728Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.Type: GrantFiled: February 26, 2007Date of Patent: July 21, 2009Assignee: Applied Materials, Inc.Inventors: Francimar Campana Schmitt, Li-Qun Xia, Son Van Nguyen, Shankar Venkataraman
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Patent number: 7226876Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.Type: GrantFiled: May 11, 2005Date of Patent: June 5, 2007Assignee: Applied Materials, Inc.Inventors: Francimar Campana Schmitt, Li-Qun Xia, Son Van Nguyen, Shankar Venkataraman
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Patent number: 7200460Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.Type: GrantFiled: February 25, 2003Date of Patent: April 3, 2007Assignee: Applied Materials, Inc.Inventors: Francimar Campana, Srinivas Nemani, Michael Chapin, Shankar Venkataraman
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Patent number: 7117064Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.Type: GrantFiled: February 21, 2006Date of Patent: October 3, 2006Assignee: Applied Materials, Inc.Inventors: Srinivas D Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Publication number: 20060141805Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.Type: ApplicationFiled: February 21, 2006Publication date: June 29, 2006Inventors: Srinivas Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Patent number: 7001850Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.Type: GrantFiled: July 20, 2004Date of Patent: February 21, 2006Assignee: Applied Materials Inc.Inventors: Srinivas D Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Publication number: 20050208759Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.Type: ApplicationFiled: May 11, 2005Publication date: September 22, 2005Inventors: Francimar Campana Schmitt, Li-Qun Xia, Son Nguyen, Shankar Venkataraman
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Patent number: 6913992Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.Type: GrantFiled: March 7, 2003Date of Patent: July 5, 2005Assignee: Applied Materials, Inc.Inventors: Francimar Campana Schmitt, Li-Qun Xia, Son Van Nguyen, Shankar Venkataraman
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Patent number: 6855484Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.Type: GrantFiled: February 25, 2003Date of Patent: February 15, 2005Assignee: Applied Materials, Inc.Inventors: Francimar Campana, Srinivas Nemani, Michael Chapin, Shankar Venkataraman
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Publication number: 20050020048Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.Type: ApplicationFiled: July 20, 2004Publication date: January 27, 2005Inventors: Srinivas Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Publication number: 20040175929Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.Type: ApplicationFiled: March 7, 2003Publication date: September 9, 2004Applicant: Applied Materials, Inc.Inventors: Francimar Campana Schmitt, Li-Qun Xia, Son Van Nguyen, Shankar Venkataraman
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Patent number: 6764958Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.Type: GrantFiled: July 28, 2000Date of Patent: July 20, 2004Assignee: Applied Materials Inc.Inventors: Srinivas D Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Publication number: 20030221621Abstract: A method and apparatus for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.Type: ApplicationFiled: June 2, 2003Publication date: December 4, 2003Applicant: Applied Materials Inc.Inventors: Himanshu Pokharna, Shankar Chandran, Srinivas D. Nemani, Chen-an Chen, Francimar Campana, Ellie Yieh, Li-Qun Xia
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Publication number: 20030148020Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.Type: ApplicationFiled: February 25, 2003Publication date: August 7, 2003Applicant: Applied Materials, Inc.Inventors: Francimar Campana, Srinivas Nemani, Michael Chapin, Shankar Venkataraman
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Publication number: 20030148223Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.Type: ApplicationFiled: February 25, 2003Publication date: August 7, 2003Applicant: Applied Materials, Inc.Inventors: Francimar Campana, Srinivas Nemani, Michael Chapin, Shankar Venkataraman