Abstract: Apparatus for performing at least one processing operation on a substrate, the apparatus being provided with at least one process chamber and a vacuum lock for the purposes of placing the substrate from the surroundings into a process chamber without the reduced pressure in the respective process chamber being lost, the vacuum lock comprising a vacuum chamber which is bounded by a number of walls and to which a vacuum pump is connected, while in one of the walls at least one supply opening is provided, and for the purpose of the or each process chamber in one of the walls a process chamber opening belonging to a respective process chamber is provided, the at least one supply opening being externally closable with an outer cover and being closable from the vacuum chamber with an inner cover. Further disclosed is an assembly of such an apparatus with a transport device for supplying substrates to a supply opening of the vacuum lock and removing same.

Abstract: A method for the passivation of a semiconductor substrate, wherein a SiNx:H layer is deposited on the surface of the substrate (1) by means of a PECVD process comprising the following steps: