Patents by Inventor Franck Fournel

Franck Fournel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6991944
    Abstract: This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.
    Type: Grant
    Filed: August 10, 2004
    Date of Patent: January 31, 2006
    Assignees: S.O.I.Tec Silicon on Insulation Technologies S.A., Commissariat à l'Energie Atomique (CEA)
    Inventors: Olivier Rayssac, Beryl Blondeau, Hubert Moriceau, Christelle Lagahe-Blanchard, Franck Fournel
  • Publication number: 20050130429
    Abstract: This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.
    Type: Application
    Filed: August 10, 2004
    Publication date: June 16, 2005
    Inventors: Olivier Rayssac, Beryl Blondeau, Hubert Moriceau, Christelle Lagahe-Blanchard, Franck Fournel
  • Publication number: 20050101095
    Abstract: Method for producing a stacked structure by obtaining at least two crystalline parts by detaching them from a same initial structure, each crystalline part having one face created by the detachment having a tilt angle with a reference crystalline plane of the initial structure. Structures are formed from the crystalline parts, each structure having a face to be assembled that has a controlled tilt angle in relation to the tilt angle of the created face of the corresponding crystalline part. The structures are assembled while controlling their relative positions, rotating in an interface plane, in relation to relative positions of respective crystalline parts within the initial structure, to obtain a controlled resulting tilt angle at the interface between the structures. The method may find application particularly in microelectronics, optics, and optoelectronics.
    Type: Application
    Filed: December 27, 2001
    Publication date: May 12, 2005
    Inventors: Franck Fournel, Hubert Moriceau, Marc Zussy, Noel Magnea
  • Patent number: 6838358
    Abstract: The present invention relates to a method of manufacturing a wafer in which a heterogeneous material compound is detached at a pre-determined detachment area of the compound, and the compound is subject to a thermal treatment. It is the object of the present invention to provide an easy and effective method of detachment a heterogeneous material compound with a reduced risk of an undefined breaking of the compound. The object is solved by a method wherein the thermal treatment includes annealing the compound, where the annealing is stopped before a detachment of the compound, and an irradiation of the compound with photons in order to obtain a detachment of the compound at the pre-determined detachment area.
    Type: Grant
    Filed: November 18, 2003
    Date of Patent: January 4, 2005
    Assignee: S.O.I.TEC Silicon on Insulator Technologies S.A.
    Inventors: Thibaut Maurice, Ian Cayrefourcq, Franck Fournel
  • Publication number: 20040241960
    Abstract: The present invention relates to a method of manufacturing a wafer in which a heterogeneous material compound is detached at a pre-determined detachment area of the compound, and the compound is subject to a thermal treatment. It is the object of the present invention to provide an easy and effective method of detachment a heterogeneous material compound with a reduced risk of an undefined breaking of the compound. The object is solved by a method wherein the thermal treatment includes annealing the compound, where the annealing is stopped before a detachment of the compound, and an irradiation of the compound with photons in order to obtain a detachment of the compound at the pre-determined detachment area.
    Type: Application
    Filed: November 18, 2003
    Publication date: December 2, 2004
    Inventors: Thibaut Maurice, Ian Cayrefourcq, Franck Fournel
  • Publication number: 20040074866
    Abstract: The invention relates to a process permitting defects or stresses in a structure to be revealed, comprising the following steps:
    Type: Application
    Filed: October 27, 2003
    Publication date: April 22, 2004
    Inventors: Franck Fournel, Hubert Moriceau, Noel Magnea
  • Patent number: 6724017
    Abstract: The invention relates to a device comprising microstructures or nanostructures on a support, characterized in that the support comprises: a) a substrate (1) comprising at least one part composed of a crystalline material, this part having a surface (2) with a stress field or a topology associated with a stress field, the stress field being associated with dislocations, b) an intermediate layer (3) bonded to the surface (2), and having a thickness and/or composition and/or a surface state enabling transmission of said stress field through this layer as far as its free face that supports microstructures or nanostructures (4).
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: April 20, 2004
    Assignees: Commissariat a l'Energie Atomique, Centre National de la Recherche Scientific
    Inventors: Marie-Noëlle Semeria, Pierre Mur, Franck Fournel, Hubert Moriceau, Hubert Eymery, Noël Magnea, Thierry Baron, François Martin
  • Publication number: 20030186512
    Abstract: The invention relates to a device comprising microstructures or nanostructures on a support, characterized in that the support comprises:
    Type: Application
    Filed: March 28, 2003
    Publication date: October 2, 2003
    Inventors: Marie-No?euml;lle Semeria, Pierre Mur, Franck Fournel, Hubert Moriceau, J?ouml;el Eymery, N?ouml;el Magnea, Thierry Baron, Francois Martin